JP2008506302A - チューナブル共振器 - Google Patents
チューナブル共振器 Download PDFInfo
- Publication number
- JP2008506302A JP2008506302A JP2007520252A JP2007520252A JP2008506302A JP 2008506302 A JP2008506302 A JP 2008506302A JP 2007520252 A JP2007520252 A JP 2007520252A JP 2007520252 A JP2007520252 A JP 2007520252A JP 2008506302 A JP2008506302 A JP 2008506302A
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- electrode
- generating material
- resonance generating
- electric field
- tunable resonator
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- 239000000463 material Substances 0.000 claims abstract description 73
- 230000005684 electric field Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 12
- 229910002367 SrTiO Inorganic materials 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 29
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 230000001419 dependent effect Effects 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/326—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator the resonator being an acoustic wave device, e.g. SAW or BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
fn=vac・n/2t
ここで、n=1,2,3,…tは、強誘電体膜の厚さを示し、vは、電界依存音響速度を示す。電界依存共振周波数を図8に示す。
d* 33 = d33 + g33E3 (6)
ここで、d33は、電界非依存圧電係数であり、g33は、電気歪み係数である。電界依存圧電係数d* 33によれば、電気機械結合係数もまた、以下に示すように電界依存となる。
K2 = k2 33/(1 +k2 33 ) (7)
ここで
k2 33 = (d* 33)2s33/ε0ε33 (8)
またここで、ε33は、共振器の面の法線方向における強誘電体膜の電界依存誘電率を示す。
ε33 = 8.85・10-12 F/m は、フリースペースの誘電率である。
S33 = 2.3*10-13[1-1.11410*E2] (9)
ここでE2はEの二乗を示している。
vac = 1/(ρS33)1/2 (10)
そして、共振器の共振周波数fnは、以下のようになる。
fn = (vac/2t)n = (n/2t){1/ρs33}, n = 1,2... (11)
ここで{x}は、xの平方根を示すものとする。tは膜の厚さ、ρは、材料の密度を示す。
Claims (9)
- 第1電極130, 240, 350, 550, 650を有する構造体を支持する基板140, 260, 360, 560, 660, 960と、
前記第1電極に接続された共振発生材料の層120, 230, 330, 530, 630, 930と、
前記共振発生材料に接続された第2電極110, 210, 310, 510, 610, 710, 910と、
を備えたチューナブル共振器100, 200, 300, 500, 600, 700, 900であって、
前記共振発生材料は、非極性相又は常誘電性相にある非結晶性強誘電体材料であることを特徴とするチューナブル共振器。 - 前記非結晶性強誘電体材料は、[110]方向又は[111]方向を有することを特徴とする請求項1に記載のチューナブル共振器。
- 前記非結晶性強誘電体材料は、
前記共振発生材料に圧電効果を引き起こすために前記第1及び第2電極間に印加されたDC電界により共振し、
前記共振発生材料中に音波を生成するために前記第1及び第2電極間に印加されたAC電界によっても共振することを特徴とする請求項1に記載のチューナブル共振器。 - 前記第1及び第2電極と、前記共振発生材料とは、サンドイッチ構造に配され、前記第1電極は前記基板に近接して配され、前記共振発生材料は前記第1電極上に配され、前記第2電極は、前記共振発生材料上に配されることを特徴とする請求項1乃至3の何れか1項に記載のチューナブル共振器。
- 前記共振発生材料は、SrTiO3、BaxSr1-xTiO3、KxNa1-xNbO3、KTaO3, CaxSr1-xTiO3、及びKxLi1-xTaO3の内の少なくとも何れか1つを含むことを特徴とする請求項1乃至4のいずれか1項に記載のチューナブル共振器。
- 前記第1及び第2電極は、矩形であり、その2つの矩形の長辺方向同士は、0度以上の角度を為すように配置されることを特徴とする請求項1乃至5の何れか1項に記載のチューナブル共振器。
- 非伝導状態の基板の上に第1電極を形成する工程と、
前記第1電極上に、共振発生材料の層を形成する工程と、
前記共振発生材料の層上に第2電極を形成する工程と、
を含み、
前記共振発生材料は、非極性相又は常誘電性相にある非結晶性強誘電体材料であることを特徴とするチューナブル共振器の製造方法。 - 前記非結晶性強誘電体材料は、[110]方向又は[111]方向を有することを特徴とする請求項7に記載のチューナブル共振器の製造方法。
- 前記共振発生材料は、SrTiO3、KTaO3、BaxSr1-xTiO3、から選択されることを特徴とする請求項7又は8に記載のチューナブル共振器の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SE2004/001099 WO2006004470A1 (en) | 2004-07-06 | 2004-07-06 | A tuneable resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008506302A true JP2008506302A (ja) | 2008-02-28 |
Family
ID=35783170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007520252A Pending JP2008506302A (ja) | 2004-07-06 | 2004-07-06 | チューナブル共振器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7548142B2 (ja) |
EP (1) | EP1766772A1 (ja) |
JP (1) | JP2008506302A (ja) |
CN (1) | CN1981428B (ja) |
CA (1) | CA2569533A1 (ja) |
WO (1) | WO2006004470A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7548142B2 (en) * | 2004-07-06 | 2009-06-16 | Telefonaktiebolagert L M Ericsson (Publ) | Tuneable resonator |
US7675388B2 (en) * | 2006-03-07 | 2010-03-09 | Agile Rf, Inc. | Switchable tunable acoustic resonator using BST material |
US8512800B2 (en) | 2007-12-04 | 2013-08-20 | Triquint Semiconductor, Inc. | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters |
KR101330140B1 (ko) * | 2007-12-21 | 2013-11-18 | 재단법인서울대학교산학협력재단 | 공진 수단의 구동 장치 및 방법 |
US8531083B2 (en) | 2008-02-25 | 2013-09-10 | Resonance Semiconductor Corporation | Devices having a tunable acoustic path length and methods for making same |
US7768364B2 (en) | 2008-06-09 | 2010-08-03 | Maxim Integrated Products, Inc. | Bulk acoustic resonators with multi-layer electrodes |
WO2010085366A2 (en) | 2009-01-26 | 2010-07-29 | Cymatics Laboratories Corporation | Switchable power combiner |
US8334788B2 (en) | 2010-03-04 | 2012-12-18 | Rosemount Inc. | Process variable transmitter with display |
US9622338B2 (en) | 2013-01-25 | 2017-04-11 | Laird Technologies, Inc. | Frequency selective structures for EMI mitigation |
US9173333B2 (en) * | 2013-01-25 | 2015-10-27 | Laird Technologies, Inc. | Shielding structures including frequency selective surfaces |
CN103427778B (zh) * | 2013-08-27 | 2017-12-08 | 张家港恩达通讯科技有限公司 | 基于铁电材料的薄膜体声波谐振器的制备方法、谐振器 |
US9605964B2 (en) * | 2014-01-03 | 2017-03-28 | The Boeing Company | Gyro quadrature stabalization with demodulation phase error nulling |
CN105430867B (zh) * | 2015-11-06 | 2018-01-05 | 北京空间机电研究所 | 一种用于ccd相机的降噪电路 |
CN115996039B (zh) * | 2023-03-23 | 2023-07-11 | 武汉敏声新技术有限公司 | 多工器 |
CN117792332B (zh) * | 2024-02-23 | 2024-05-03 | 电子科技大学 | 一种基于大应力加载结构的电调谐薄膜体声波谐振器 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63166308A (ja) * | 1986-12-27 | 1988-07-09 | Ngk Spark Plug Co Ltd | 梯子型電気濾波器の直列共振子の製造方法 |
JPH0426214A (ja) * | 1990-05-21 | 1992-01-29 | Ngk Spark Plug Co Ltd | 高周波用ラダー型圧電フィルタ |
JPH0964683A (ja) * | 1995-08-17 | 1997-03-07 | Motorola Inc | モノリシック薄膜共振器格子フィルタおよびその製造方法 |
JP2000101345A (ja) * | 1998-09-22 | 2000-04-07 | Tdk Corp | 電圧制御発振器 |
JP2001185985A (ja) * | 1999-12-27 | 2001-07-06 | Kyocera Corp | 圧電共振子 |
JP2001332956A (ja) * | 2000-05-19 | 2001-11-30 | Mitsubishi Electric Corp | 薄膜圧電素子基板 |
JP2002329787A (ja) * | 2001-04-27 | 2002-11-15 | Kyocera Corp | 可変容量コンデンサおよび製造方法 |
JP2003163566A (ja) * | 2001-11-22 | 2003-06-06 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP2003168955A (ja) * | 2001-09-21 | 2003-06-13 | Toshiba Corp | 可変フィルタ |
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JP2004023593A (ja) * | 2002-06-19 | 2004-01-22 | Mitsubishi Electric Corp | 弾性表面波装置及びその製造方法 |
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US7548142B2 (en) * | 2004-07-06 | 2009-06-16 | Telefonaktiebolagert L M Ericsson (Publ) | Tuneable resonator |
-
2004
- 2004-07-06 US US11/573,312 patent/US7548142B2/en not_active Expired - Fee Related
- 2004-07-06 EP EP04749135A patent/EP1766772A1/en not_active Ceased
- 2004-07-06 JP JP2007520252A patent/JP2008506302A/ja active Pending
- 2004-07-06 CA CA002569533A patent/CA2569533A1/en not_active Abandoned
- 2004-07-06 WO PCT/SE2004/001099 patent/WO2006004470A1/en active Application Filing
- 2004-07-06 CN CN2004800435205A patent/CN1981428B/zh not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63166308A (ja) * | 1986-12-27 | 1988-07-09 | Ngk Spark Plug Co Ltd | 梯子型電気濾波器の直列共振子の製造方法 |
JPH0426214A (ja) * | 1990-05-21 | 1992-01-29 | Ngk Spark Plug Co Ltd | 高周波用ラダー型圧電フィルタ |
JPH0964683A (ja) * | 1995-08-17 | 1997-03-07 | Motorola Inc | モノリシック薄膜共振器格子フィルタおよびその製造方法 |
JP2000101345A (ja) * | 1998-09-22 | 2000-04-07 | Tdk Corp | 電圧制御発振器 |
JP2001185985A (ja) * | 1999-12-27 | 2001-07-06 | Kyocera Corp | 圧電共振子 |
JP2003530750A (ja) * | 2000-04-06 | 2003-10-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 共振器を有するチューニング可能なフィルタ構成 |
JP2001332956A (ja) * | 2000-05-19 | 2001-11-30 | Mitsubishi Electric Corp | 薄膜圧電素子基板 |
JP2002329787A (ja) * | 2001-04-27 | 2002-11-15 | Kyocera Corp | 可変容量コンデンサおよび製造方法 |
JP2003168955A (ja) * | 2001-09-21 | 2003-06-13 | Toshiba Corp | 可変フィルタ |
JP2003163566A (ja) * | 2001-11-22 | 2003-06-06 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP2004007352A (ja) * | 2002-03-29 | 2004-01-08 | Toshiba Corp | 高周波フィルタおよび高周波フィルタ装置 |
JP2004023593A (ja) * | 2002-06-19 | 2004-01-22 | Mitsubishi Electric Corp | 弾性表面波装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7548142B2 (en) | 2009-06-16 |
EP1766772A1 (en) | 2007-03-28 |
CN1981428A (zh) | 2007-06-13 |
CA2569533A1 (en) | 2006-01-12 |
US20080055023A1 (en) | 2008-03-06 |
CN1981428B (zh) | 2012-11-14 |
WO2006004470A1 (en) | 2006-01-12 |
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