JP2007533127A5 - - Google Patents

Download PDF

Info

Publication number
JP2007533127A5
JP2007533127A5 JP2007506720A JP2007506720A JP2007533127A5 JP 2007533127 A5 JP2007533127 A5 JP 2007533127A5 JP 2007506720 A JP2007506720 A JP 2007506720A JP 2007506720 A JP2007506720 A JP 2007506720A JP 2007533127 A5 JP2007533127 A5 JP 2007533127A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007506720A
Other versions
JP4384224B2 (ja
JP2007533127A (ja
Filing date
Publication date
Priority claimed from DE102004018153A external-priority patent/DE102004018153B9/de
Application filed filed Critical
Publication of JP2007533127A publication Critical patent/JP2007533127A/ja
Publication of JP2007533127A5 publication Critical patent/JP2007533127A5/ja
Application granted granted Critical
Publication of JP4384224B2 publication Critical patent/JP4384224B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007506720A 2004-04-08 2005-04-06 高圧接合型電界効果トランジスタ Expired - Fee Related JP4384224B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004018153A DE102004018153B9 (de) 2004-04-08 2004-04-08 Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung
PCT/EP2005/003623 WO2005098964A1 (de) 2004-04-08 2005-04-06 Hochvolt-sperrschicht-feldeffekttransistor

Publications (3)

Publication Number Publication Date
JP2007533127A JP2007533127A (ja) 2007-11-15
JP2007533127A5 true JP2007533127A5 (ja) 2009-03-12
JP4384224B2 JP4384224B2 (ja) 2009-12-16

Family

ID=34964423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007506720A Expired - Fee Related JP4384224B2 (ja) 2004-04-08 2005-04-06 高圧接合型電界効果トランジスタ

Country Status (6)

Country Link
US (1) US7781809B2 (ja)
EP (1) EP1741142B1 (ja)
JP (1) JP4384224B2 (ja)
KR (1) KR100962233B1 (ja)
DE (1) DE102004018153B9 (ja)
WO (1) WO2005098964A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888768B2 (en) * 2006-01-09 2011-02-15 Fairchild Korea Semiconductor, Ltd. Power integrated circuit device having embedded high-side power switch
US7989853B2 (en) * 2008-08-07 2011-08-02 Texas Instruments Incorporated Integration of high voltage JFET in linear bipolar CMOS process
TW201025456A (en) * 2008-12-26 2010-07-01 Richtek Technology Corp Method for fabricating a junction field effect transistor and the junction field effect transistor itself
US7943445B2 (en) 2009-02-19 2011-05-17 International Business Machines Corporation Asymmetric junction field effect transistor
CN201708157U (zh) * 2010-06-30 2011-01-12 四川和芯微电子股份有限公司 结型场效应晶体管结构
US8481380B2 (en) * 2010-09-23 2013-07-09 International Business Machines Corporation Asymmetric wedge JFET, related method and design structure
CN102610656B (zh) * 2011-01-19 2014-04-16 上海华虹宏力半导体制造有限公司 耐高压的结型场效应管
DE102011009487B4 (de) 2011-01-26 2017-10-19 Austriamicrosystems Ag Asymmetrischer Hochvolt-JFET und Herstellungsverfahren
US8618583B2 (en) 2011-05-16 2013-12-31 International Business Machines Corporation Junction gate field effect transistor structure having n-channel
CN103050512A (zh) * 2011-10-13 2013-04-17 上海华虹Nec电子有限公司 非外延的高压绝缘n型ldmos器件结构
CN106158957B (zh) * 2015-04-10 2019-05-17 无锡华润上华科技有限公司 横向扩散金属氧化物半导体场效应管及其制造方法
KR102401162B1 (ko) 2021-05-20 2022-05-24 주식회사 키파운드리 폴리-실리콘 접합 전계 효과 트랜지스터를 포함하는 반도체 소자 및 이의 제조 방법
CN113629152B (zh) * 2021-07-07 2024-07-23 华虹半导体(无锡)有限公司 Jfet器件及其制作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841917A (en) * 1971-09-06 1974-10-15 Philips Nv Methods of manufacturing semiconductor devices
JPS53143183A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Semicondutor integrated circuit device and production of the same
JPS5412680A (en) * 1977-06-30 1979-01-30 Matsushita Electric Ind Co Ltd Junction-type field effect transistor and its manufacture
JPS54149478A (en) * 1978-05-16 1979-11-22 Matsushita Electric Ind Co Ltd Junction type field effect semiconductor device
JPS62196360U (ja) * 1986-06-05 1987-12-14
EP0268426A3 (en) * 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
JPS63211683A (ja) 1987-02-27 1988-09-02 Ulvac Corp 太陽光選択吸収膜
US4939099A (en) * 1988-06-21 1990-07-03 Texas Instruments Incorporated Process for fabricating isolated vertical bipolar and JFET transistors
JPH0234938A (ja) 1988-07-25 1990-02-05 Matsushita Electron Corp 半導体装置
US5008719A (en) * 1989-10-20 1991-04-16 Harris Corporation Dual layer surface gate JFET having enhanced gate-channel breakdown voltage
JP3036175B2 (ja) 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
JPH0613409A (ja) 1992-06-24 1994-01-21 Ricoh Co Ltd 半導体素子及びその製造方法
US5373183A (en) * 1993-04-28 1994-12-13 Harris Corporation Integrated circuit with improved reverse bias breakdown
US5889298A (en) * 1993-04-30 1999-03-30 Texas Instruments Incorporated Vertical JFET field effect transistor
JPH09307070A (ja) 1996-05-14 1997-11-28 Fuji Electric Co Ltd スイッチング電源用半導体集積回路
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
ATE230162T1 (de) * 1997-10-02 2003-01-15 Ist Trentino Di Cultura Verfahren zur herstellung eines jfet bauelements
FR2776832B1 (fr) * 1998-03-31 2000-06-16 Sgs Thomson Microelectronics Procede de fabrication de transistors jfet
EP0981166A3 (en) 1998-08-17 2000-04-19 ELMOS Semiconductor AG JFET transistor
JP2000100829A (ja) * 1998-09-25 2000-04-07 Sony Corp 接合型電界効果トランジスタおよびその製造方法
US6355513B1 (en) * 1999-10-29 2002-03-12 Lovoltech, Inc. Asymmetric depletion region for normally off JFET
JP2001332702A (ja) 2000-05-18 2001-11-30 Seiko Epson Corp Ｍｏｓトランジスタおよびその製造方法並びに半導体装置
US6768171B2 (en) * 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
JP3812421B2 (ja) * 2001-06-14 2006-08-23 住友電気工業株式会社 横型接合型電界効果トランジスタ
US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology

Similar Documents

Publication Publication Date Title
BE2012C042I2 (ja)
BRPI0601358B8 (pt) Aplicador de clipe cirúrgico
BRPI0601402B8 (pt) Aplicador de grampos cirúrgicos
BR122017004707A2 (ja)
IN2006DE02729A (ja)
DE602005006269D1 (ja)
IN2007DE08267A (ja)
BRPI0609157A8 (ja)
BRPI0608519A2 (ja)
BR122020005056A2 (ja)
BR122016029989A2 (ja)
BRPI0604219A (ja)
JP2007533127A5 (ja)
JP2006310969A5 (ja)
IN2008KO00869A (ja)
JP2007025047A5 (ja)
JP2006319164A5 (ja)
JP2006284500A5 (ja)
JP2006194708A5 (ja)
JP2006263289A5 (ja)
BRPI0618215B8 (ja)
BY2237U (ja)
JP2006187801A5 (ja)
JP2007014078A5 (ja)
JP2006315559A5 (ja)