FR2776832B1 - Procede de fabrication de transistors jfet - Google Patents
Procede de fabrication de transistors jfetInfo
- Publication number
- FR2776832B1 FR2776832B1 FR9804208A FR9804208A FR2776832B1 FR 2776832 B1 FR2776832 B1 FR 2776832B1 FR 9804208 A FR9804208 A FR 9804208A FR 9804208 A FR9804208 A FR 9804208A FR 2776832 B1 FR2776832 B1 FR 2776832B1
- Authority
- FR
- France
- Prior art keywords
- jfet transistors
- manufacturing jfet
- manufacturing
- transistors
- jfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9804208A FR2776832B1 (fr) | 1998-03-31 | 1998-03-31 | Procede de fabrication de transistors jfet |
US09/281,454 US6153453A (en) | 1998-03-31 | 1999-03-30 | JFET transistor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9804208A FR2776832B1 (fr) | 1998-03-31 | 1998-03-31 | Procede de fabrication de transistors jfet |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2776832A1 FR2776832A1 (fr) | 1999-10-01 |
FR2776832B1 true FR2776832B1 (fr) | 2000-06-16 |
Family
ID=9524866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9804208A Expired - Fee Related FR2776832B1 (fr) | 1998-03-31 | 1998-03-31 | Procede de fabrication de transistors jfet |
Country Status (2)
Country | Link |
---|---|
US (1) | US6153453A (fr) |
FR (1) | FR2776832B1 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223701A (ja) * | 1999-01-28 | 2000-08-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US7642566B2 (en) * | 2006-06-12 | 2010-01-05 | Dsm Solutions, Inc. | Scalable process and structure of JFET for small and decreasing line widths |
US6818518B1 (en) * | 2003-06-24 | 2004-11-16 | Texas Instruments Incorporated | Method for producing low/high voltage threshold transistors in semiconductor processing |
DE102004018153B9 (de) * | 2004-04-08 | 2012-08-23 | Austriamicrosystems Ag | Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung |
WO2006126423A1 (fr) * | 2005-05-27 | 2006-11-30 | Sharp Kabushiki Kaisha | Substrat de transistor a film fin, dispositif d’affichage a cristaux liquides utilisant ce substrat et procede de fabrication de ce substrat |
US7468500B2 (en) * | 2005-09-13 | 2008-12-23 | Texas Instruments Incorporated | High performance charge detection amplifier for CCD image sensors |
US7569873B2 (en) * | 2005-10-28 | 2009-08-04 | Dsm Solutions, Inc. | Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys |
US7791321B2 (en) * | 2007-02-23 | 2010-09-07 | Virginia Tech Intellectual Properties, Inc. | Coupled-inductor multi-phase buck converters |
TW200910470A (en) * | 2007-05-03 | 2009-03-01 | Dsm Solutions Inc | Enhanced hole mobility p-type JFET and fabrication method therefor |
US7453107B1 (en) * | 2007-05-04 | 2008-11-18 | Dsm Solutions, Inc. | Method for applying a stress layer to a semiconductor device and device formed therefrom |
US7939863B2 (en) * | 2008-08-07 | 2011-05-10 | Texas Instruments Incorporated | Area efficient 3D integration of low noise JFET and MOS in linear bipolar CMOS process |
US8390039B2 (en) * | 2009-11-02 | 2013-03-05 | Analog Devices, Inc. | Junction field effect transistor |
US8193046B2 (en) * | 2009-11-02 | 2012-06-05 | Analog Devices, Inc. | Junction field effect transistor |
US8462477B2 (en) * | 2010-09-13 | 2013-06-11 | Analog Devices, Inc. | Junction field effect transistor for voltage protection |
US9299857B2 (en) * | 2014-06-19 | 2016-03-29 | Macronix International Co., Ltd. | Semiconductor device |
US9543304B2 (en) | 2015-04-02 | 2017-01-10 | Stmicroelectronics, Inc. | Vertical junction FinFET device and method for manufacture |
CN111933694B (zh) * | 2020-06-23 | 2024-04-30 | 重庆中科渝芯电子有限公司 | 一种多晶自掺杂平滑顶栅jfet器件及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2753704C2 (de) * | 1977-12-02 | 1986-11-06 | Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger | Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren |
JPH05304258A (ja) * | 1992-04-28 | 1993-11-16 | Toshiba Corp | 半導体装置およびその製造方法 |
US5296409A (en) * | 1992-05-08 | 1994-03-22 | National Semiconductor Corporation | Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process |
JPH08507177A (ja) * | 1993-02-25 | 1996-07-30 | ナショナル・セミコンダクター・コーポレイション | Jfetを備えたcmosデバイスの製造プロセス |
DE69415500T2 (de) * | 1994-03-31 | 1999-05-20 | Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano | Verfahren zur Herstellung eines Halbleiterbauteils mit vergrabenem Übergang |
-
1998
- 1998-03-31 FR FR9804208A patent/FR2776832B1/fr not_active Expired - Fee Related
-
1999
- 1999-03-30 US US09/281,454 patent/US6153453A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2776832A1 (fr) | 1999-10-01 |
US6153453A (en) | 2000-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |
Effective date: 20071130 |