JP2007527500A - 加速粒子および高エネルギ放射線センサ - Google Patents
加速粒子および高エネルギ放射線センサ Download PDFInfo
- Publication number
- JP2007527500A JP2007527500A JP2006506237A JP2006506237A JP2007527500A JP 2007527500 A JP2007527500 A JP 2007527500A JP 2006506237 A JP2006506237 A JP 2006506237A JP 2006506237 A JP2006506237 A JP 2006506237A JP 2007527500 A JP2007527500 A JP 2007527500A
- Authority
- JP
- Japan
- Prior art keywords
- well
- monolithic
- monolithic sensor
- transport layer
- carrier transport
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 27
- 239000002245 particle Substances 0.000 title claims description 22
- 239000002800 charge carrier Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 239000002019 doping agent Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 230000005865 ionizing radiation Effects 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 2
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 19
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 5
- 238000003491 array Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000004 low energy electron diffraction Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【選択図】 図5
Description
1)第一ウェルに配置された少なくとも一つのnMOSトランジスタ、または2)第二ウェルに配置された少なくとも一つのpMOSトランジスタ、または3)第一ウェルおよび第二ウェルにそれぞれ配置された少なくとも一つのnMOSトランジスタおよび少なくとも一つのpMOSトランジスタ。
Claims (23)
- 加速粒子または高エネルギ放射線の検出に使用するように適応されたモノリシックセンサであって、第一導電型のドーパントを有する電荷担体輸送層と、前記電荷担体輸送層より高い濃度の第一導電型のドーパントを有し、かつそれに集積された読出し回路機構を有する少なくとも一つの第一ウェルと、前記電荷担体輸送層との第一接合を形成する第二導電型のドーパントを有する少なくとも一つの第二ウェルとを備え、よって前記電荷担体輸送層内で電荷担体が生成されたときに、前記電荷担体が前記電荷担体輸送層と第二ウェルとの間の接合に向かって移動して収集されて信号を生成するように構成され、加速粒子または高エネルギ放射線による衝撃に耐えることのできるモノリシックセンサ。
- 前記電荷担体輸送層ならびに前記第一および第二ウェルが相補型金属酸化物半導体構造内に形成される、請求項1に記載のモノリシックセンサ。
- 前記センサにバイアス電圧を印加するための手段をさらに含む、請求項1または2に記載のモノリシックセンサ。
- 前記バイアス電圧が印加されたときに前記電荷担体輸送層がドリフトフィールドを含む、請求項3に記載のモノリシックセンサ。
- 前記バイアス電圧が印加されたときに前記電荷担体輸送層が実質的に完全に空乏化する、請求項4に記載のモノリシックセンサ。
- 前記センサが15kRad以上の放射線量に耐えるように適応された、請求項5に記載のモノリシックセンサ。
- 前記第二導電型のドーパントを有する第三ウェルをさらに備える、請求項1ないし6のいずれか一項に記載のモノリシックセンサ。
- 前記第三ウェルが前記第一ウェルの下に配置される、請求項7に記載のモノリシックセンサ。
- 前記センサ用の前記読出し回路機構が、
1)前記第一ウェルに配置された少なくとも一つのnMOSトランジスタ、または、
2)前記第二ウェルに配置された少なくとも一つのpMOSトランジスタ、または、
3)前記第一ウェルおよび前記第二ウェルにそれぞれ配置された少なくとも一つのnMOSトランジスタおよび少なくとも一つのpMOSトランジスタ、
のうちの一つを備える、請求項1ないし8のいずれか一項に記載のモノリシックセンサ。 - 半導体基板をさらに備え、前記電荷担体輸送層が前記半導体基板より低濃度のドーパントを有する、請求項1ないし9のいずれか一項に記載のモノリシックセンサ。
- 前記第三ウェルが前記第一ウェルに隣接して配置され、前記第三ウェルと前記電荷担体輸送層との間に分離層が設けられ、前記第二ウェルが前記分離層を貫通して前記電荷担体層内にまで延びる、請求項7に記載のモノリシックセンサ。
- 前記分離層が前記電荷担体輸送層より高い濃度で前記第一導電型のドーパントを含む半導体層を備える、請求項11に記載のモノリシックセンサ。
- 前記分離層は絶縁誘電体を備える、請求項11に記載のモノリシックセンサ。
- 前記第一ウェルと、前記第二導電型のドーパントを有する領域との間の接合が、前記第一型の加速粒子またはイオン化放射線とは異なる第二型の入射加速粒子または高イオン化放射線の結果として信号を発生するための第二収集接合を形成する、請求項1に記載のモノリシックセンサ。
- 前記第一および第二ウェル間の前記接合が第二接合を形成する、請求項14に記載のモノリシックセンサ。
- 前記第一および第二接合が、加速粒子の異なるエネルギを示す信号を選択的に発生する、請求項14または15のいずれかに記載のモノリシックセンサ。
- 前記第一および第二ウェルが前記電荷担体輸送層に形成され、前記第二ウェルが前記第一ウェルから分離される、請求項1に記載のモノリシックセンサ。
- 100ミクロン以下の厚さを有する半導体基板をさらに備える、請求項1ないし17のいずれか一項に記載のモノリシックセンサ。
- 前記半導体基板が前記第一導電型のドーパントを含む、請求項18に記載のモノリシックセンサ。
- 前記センサアレイの裏面または前面に一層のヨウ化水銀層を含む、請求項1ないし19のいずれか一項に記載のモノリシックセンサ。
- 前記センサアレイの裏面または前面に一層のヨウ化セシウム層を含む、請求項1ないし19のいずれか一項に記載のモノリシックセンサ。
- 加速粒子または高エネルギイオン化放射線による衝撃に応答して空間分解信号を発生するための相補型金属酸化物半導体デバイスを含む、集積された読出し回路機構を有する請求項1ないし21のいずれか一項に記載のモノリシックセンサの集積アレイを備えた検出器。
- 電子源と、電子ビーム加速および閉込め手段と、少なくとも一つの電子ビーム集束システムと、第一および第二の表裏両面を有する検出器であって、請求項1ないし21のいずれか一項に記載のモノリシックセンサの集積アレイを備えた検出器とを含む真空排気筐体を備えた電子顕微鏡。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0310602.8 | 2003-05-08 | ||
GB0310602A GB0310602D0 (en) | 2003-05-08 | 2003-05-08 | Monolithic detector for electromagnetic radiation and ionising particles |
GB0319825.6 | 2003-08-22 | ||
GB0319825A GB0319825D0 (en) | 2003-08-22 | 2003-08-22 | Accelerated particle and high energy radiation analyser systems |
PCT/GB2004/002014 WO2004099740A2 (en) | 2003-05-08 | 2004-05-07 | Accelerated particle and high energy radiation sensor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010218034A Division JP4824826B2 (ja) | 2003-05-08 | 2010-09-29 | モノリシックセンサ、ならびに、それを備えたセンサアレイ、検出器、および電子顕微鏡 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007527500A true JP2007527500A (ja) | 2007-09-27 |
JP4824542B2 JP4824542B2 (ja) | 2011-11-30 |
Family
ID=33436277
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006506237A Expired - Lifetime JP4824542B2 (ja) | 2003-05-08 | 2004-05-07 | 電子顕微鏡 |
JP2010218034A Expired - Lifetime JP4824826B2 (ja) | 2003-05-08 | 2010-09-29 | モノリシックセンサ、ならびに、それを備えたセンサアレイ、検出器、および電子顕微鏡 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010218034A Expired - Lifetime JP4824826B2 (ja) | 2003-05-08 | 2010-09-29 | モノリシックセンサ、ならびに、それを備えたセンサアレイ、検出器、および電子顕微鏡 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7944012B2 (ja) |
EP (1) | EP1620895B1 (ja) |
JP (2) | JP4824542B2 (ja) |
WO (1) | WO2004099740A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011530145A (ja) * | 2008-08-01 | 2011-12-15 | ダイレクト エレクトロン エルピー | 電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置および方法 |
JP2012049129A (ja) * | 2010-08-24 | 2012-03-08 | Fei Co | 透過型電子顕微鏡用の検出器システム |
JP2013038174A (ja) * | 2011-08-05 | 2013-02-21 | Canon Inc | 軟x線検出装置、及び軟x線検出システム |
JP2021500753A (ja) * | 2017-10-27 | 2021-01-07 | エッレファウンドリ エッセ.エッレ.エッレ. | 電離放射線及び電離粒子の集積センサ |
KR20210118457A (ko) * | 2019-02-26 | 2021-09-30 | 에이에스엠엘 네델란즈 비.브이. | 이득 엘리먼트를 갖는 하전 입자 검출기 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262411B2 (en) * | 2004-12-08 | 2007-08-28 | The Regents Of The University Of California | Direct collection transmission electron microscopy |
US7151287B1 (en) | 2005-03-25 | 2006-12-19 | Cypress Semiconductor Corporation | Minimizing the effect of directly converted x-rays in x-ray imagers |
GB0621040D0 (en) * | 2006-10-23 | 2006-11-29 | Melexis Nv | CMOS photodiode |
CN101595399B (zh) | 2007-01-31 | 2012-12-05 | 皇家飞利浦电子股份有限公司 | 辐射敏感探测器 |
CN101861529B (zh) * | 2007-10-04 | 2013-06-19 | 丹麦技术大学 | 用于检测能量在150eV至300keV范围内的粒子辐射的检测器以及具有这种检测器的材料映像装置 |
WO2010151810A1 (en) * | 2009-06-26 | 2010-12-29 | Gatan, Inc. | Method for discrimination of backscattered from incoming electrons in imaging electron detectors with a thin electron-sensitive layer |
GB0913047D0 (en) | 2009-07-27 | 2009-09-02 | Stfc Science & Technology | Active pixel sensor readout |
JP5065516B2 (ja) | 2010-08-04 | 2012-11-07 | エフ イー アイ カンパニ | 薄い電子検出器における後方散乱の減少 |
CN102540056B (zh) * | 2011-12-29 | 2014-04-02 | 北京控制工程研究所 | 一种aps芯片测试及筛选方法 |
DE102012213411B4 (de) * | 2012-07-31 | 2018-11-29 | Siemens Healthcare Gmbh | Verfahren zur Detektion von Röntgenstrahlung |
US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
KR20200044100A (ko) | 2017-09-29 | 2020-04-28 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자에 대한 다중 셀 검출기 |
WO2020106199A1 (en) * | 2018-11-19 | 2020-05-28 | Prismatic Sensors Ab | Edge-on photon-counting detector |
US10957707B2 (en) | 2019-04-23 | 2021-03-23 | International Business Machines Corporation | Vertical transistor based radiation dosimeter |
EP3767663A1 (en) | 2019-07-16 | 2021-01-20 | FEI Company | Method of manufacturing a charged particle detector |
US11699607B2 (en) * | 2021-06-09 | 2023-07-11 | Kla Corporation | Segmented multi-channel, backside illuminated, solid state detector with a through-hole for detecting secondary and backscattered electrons |
CN115356545B (zh) * | 2022-08-10 | 2023-04-11 | 中国科学院近代物理研究所 | 一种用于带电粒子探测的新型像素单元结构及其使用方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292670A (ja) * | 1987-05-26 | 1988-11-29 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JPH0374874A (ja) * | 1989-08-16 | 1991-03-29 | Sony Corp | 固体撮像装置 |
JPH03191570A (ja) * | 1989-12-20 | 1991-08-21 | Nec Corp | 固体撮像素子 |
JPH06140502A (ja) * | 1992-10-26 | 1994-05-20 | Nec Corp | 半導体装置の製造方法 |
JPH10284748A (ja) * | 1997-02-10 | 1998-10-23 | S I I R D Center:Kk | 半導体放射線検出装置の製造方法 |
JPH1131839A (ja) * | 1997-02-10 | 1999-02-02 | Interuniv Micro Electron Centrum Vzw | 電磁放射検出器、該検出器を用いた高感度ピクセル構造、及び該検出器の製造方法 |
JP2002203954A (ja) * | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US605619A (en) * | 1898-06-14 | wentscher | ||
NL7804038A (nl) | 1978-04-17 | 1979-10-19 | Philips Nv | Elektronenmikroskoop. |
US4399360A (en) * | 1980-08-08 | 1983-08-16 | University Patents, Inc. | Transmission electron microscope employing sequential pixel acquistion for display |
JPH07153988A (ja) * | 1993-12-01 | 1995-06-16 | Nikon Corp | 「増幅型」光電変換装置及びその駆動方法 |
US5841126A (en) * | 1994-01-28 | 1998-11-24 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
US5471515A (en) * | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US5949483A (en) * | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
WO1995026573A1 (fr) * | 1994-03-28 | 1995-10-05 | Seiko Instruments Inc. | Detecteur de lumiere et de rayonnement a semi-conducteur |
US5541402A (en) * | 1994-10-17 | 1996-07-30 | At&T Corp. | Imaging active pixel device having a non-destructive read-out gate |
US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
EP0739039A3 (en) * | 1995-04-18 | 1998-03-04 | Interuniversitair Micro-Elektronica Centrum Vzw | Pixel structure, image sensor using such pixel, structure and corresponding peripheric circuitry |
US5614744A (en) * | 1995-08-04 | 1997-03-25 | National Semiconductor Corporation | CMOS-based, low leakage active pixel array with anti-blooming isolation |
US5587596A (en) * | 1995-09-20 | 1996-12-24 | National Semiconductor Corporation | Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
JPH1041488A (ja) * | 1996-07-19 | 1998-02-13 | Nec Corp | 回路内蔵受光素子 |
US5909026A (en) * | 1996-11-12 | 1999-06-01 | California Institute Of Technology | Integrated sensor with frame memory and programmable resolution for light adaptive imaging |
EP0903935A1 (en) | 1997-09-22 | 1999-03-24 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
EP0883187A1 (en) * | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
EP0858212B1 (en) | 1997-02-10 | 2002-05-29 | Fill Factory | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
US6011251A (en) * | 1997-06-04 | 2000-01-04 | Imec | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
JPH10284753A (ja) * | 1997-04-01 | 1998-10-23 | Sony Corp | 半導体装置及びその製造方法 |
US5998790A (en) | 1997-06-18 | 1999-12-07 | The Regents Of The University Of California | Transmission electron microscope CCD camera |
US6150683A (en) * | 1997-06-27 | 2000-11-21 | Foveon, Inc. | CMOS-based color pixel with reduced noise in the blue signal |
DE69841597D1 (de) | 1997-09-22 | 2010-05-20 | Cypress Semiconductor Corp Bel | Verfahren und vorrichtungen zur verbesserung der bildqualität in einem bildsensor |
US6057586A (en) * | 1997-09-26 | 2000-05-02 | Intel Corporation | Method and apparatus for employing a light shield to modulate pixel color responsivity |
US6005619A (en) | 1997-10-06 | 1999-12-21 | Photobit Corporation | Quantum efficiency improvements in active pixel sensors |
JP3484962B2 (ja) * | 1997-12-09 | 2004-01-06 | 住友電気工業株式会社 | 受光素子 |
US6051857A (en) * | 1998-01-07 | 2000-04-18 | Innovision, Inc. | Solid-state imaging device and method of detecting optical signals using the same |
US6027956A (en) * | 1998-02-05 | 2000-02-22 | Integration Associates, Inc. | Process for producing planar dielectrically isolated high speed pin photodiode |
US6169318B1 (en) * | 1998-02-23 | 2001-01-02 | Polaroid Corporation | CMOS imager with improved sensitivity |
JP3554483B2 (ja) * | 1998-04-22 | 2004-08-18 | シャープ株式会社 | Cmos型固体撮像装置 |
US5965875A (en) * | 1998-04-24 | 1999-10-12 | Foveon, Inc. | Color separation in an active pixel cell imaging array using a triple-well structure |
US6242743B1 (en) * | 1998-08-11 | 2001-06-05 | Mosaic Imaging Technology, Inc. | Non-orbiting tomographic imaging system |
KR100284306B1 (ko) * | 1998-10-14 | 2001-03-02 | 김영환 | 이미지 센서의 화질 개선을 위한 단위 화소 구동 방법 |
JP3457551B2 (ja) * | 1998-11-09 | 2003-10-20 | 株式会社東芝 | 固体撮像装置 |
FR2791469B1 (fr) | 1999-03-23 | 2001-04-13 | Commissariat Energie Atomique | Dispositif d'imagerie de rayonnement x et procede de realisation d'un tel dispositif |
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6359293B1 (en) * | 1999-08-17 | 2002-03-19 | Agere Systems Guardian Corp. | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
JP3900233B2 (ja) * | 1999-09-06 | 2007-04-04 | シャープ株式会社 | 受光素子および回路内蔵型受光素子 |
WO2001067518A1 (en) * | 2000-03-09 | 2001-09-13 | Koninklijke Philips Electronics N.V. | Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor |
JP3951590B2 (ja) * | 2000-10-27 | 2007-08-01 | 株式会社日立製作所 | 荷電粒子線装置 |
US6580106B2 (en) * | 2001-01-12 | 2003-06-17 | Isetex. Inc | CMOS image sensor with complete pixel reset without kTC noise generation |
US6713796B1 (en) * | 2001-01-19 | 2004-03-30 | Dalsa, Inc. | Isolated photodiode |
US6608337B2 (en) * | 2001-04-12 | 2003-08-19 | Ise Tex, Inc | Image sensor with an enhanced near infra-red spectral response and method of making |
JP4489319B2 (ja) * | 2001-04-26 | 2010-06-23 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
EP1265291A1 (fr) | 2001-06-08 | 2002-12-11 | EM Microelectronic-Marin SA | Capteur d'image CMOS et procédé permettant d'opérer un capteur d'image CMOS avec une dynamique accrue |
US6762441B1 (en) * | 2001-10-15 | 2004-07-13 | Ess Technology, Inc. | Imager cell with pinned transfer gate |
US6545303B1 (en) * | 2001-11-06 | 2003-04-08 | Fillfactory | Method to increase conversion gain of an active pixel, and corresponding active pixel |
DE10156275B4 (de) * | 2001-11-16 | 2006-08-03 | Leo Elektronenmikroskopie Gmbh | Detektoranordnung und Detektionsverfahren |
JP2003224253A (ja) * | 2002-01-31 | 2003-08-08 | Sanyo Electric Co Ltd | 光半導体集積回路装置およびその製造方法 |
EP1391932A1 (en) | 2002-08-22 | 2004-02-25 | STMicroelectronics Limited | Solid state image sensor |
EP1432008B1 (en) * | 2002-12-17 | 2010-05-05 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Multi-axis compound lens, beam system making use of the compound lens, and method using the compound lens |
US7262411B2 (en) * | 2004-12-08 | 2007-08-28 | The Regents Of The University Of California | Direct collection transmission electron microscopy |
-
2004
- 2004-05-07 EP EP04731669.0A patent/EP1620895B1/en not_active Expired - Lifetime
- 2004-05-07 WO PCT/GB2004/002014 patent/WO2004099740A2/en active Application Filing
- 2004-05-07 US US10/556,028 patent/US7944012B2/en not_active Expired - Lifetime
- 2004-05-07 JP JP2006506237A patent/JP4824542B2/ja not_active Expired - Lifetime
-
2010
- 2010-09-29 JP JP2010218034A patent/JP4824826B2/ja not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292670A (ja) * | 1987-05-26 | 1988-11-29 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JPH0374874A (ja) * | 1989-08-16 | 1991-03-29 | Sony Corp | 固体撮像装置 |
JPH03191570A (ja) * | 1989-12-20 | 1991-08-21 | Nec Corp | 固体撮像素子 |
JPH06140502A (ja) * | 1992-10-26 | 1994-05-20 | Nec Corp | 半導体装置の製造方法 |
JPH10284748A (ja) * | 1997-02-10 | 1998-10-23 | S I I R D Center:Kk | 半導体放射線検出装置の製造方法 |
JPH1131839A (ja) * | 1997-02-10 | 1999-02-02 | Interuniv Micro Electron Centrum Vzw | 電磁放射検出器、該検出器を用いた高感度ピクセル構造、及び該検出器の製造方法 |
JP2002203954A (ja) * | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011530145A (ja) * | 2008-08-01 | 2011-12-15 | ダイレクト エレクトロン エルピー | 電子顕微鏡に使用される直接衝撃検出器および二次検出器を含む装置および方法 |
JP2012049129A (ja) * | 2010-08-24 | 2012-03-08 | Fei Co | 透過型電子顕微鏡用の検出器システム |
JP2013038174A (ja) * | 2011-08-05 | 2013-02-21 | Canon Inc | 軟x線検出装置、及び軟x線検出システム |
US9159765B2 (en) | 2011-08-05 | 2015-10-13 | Canon Kabushiki Kaisha | Apparatus for detecting soft X-ray radiation and X-ray detection system including such apparatus |
JP2021500753A (ja) * | 2017-10-27 | 2021-01-07 | エッレファウンドリ エッセ.エッレ.エッレ. | 電離放射線及び電離粒子の集積センサ |
JP7370323B2 (ja) | 2017-10-27 | 2023-10-27 | エッレファウンドリ エッセ.エッレ.エッレ. | 電離放射線及び電離粒子の集積センサ |
KR20210118457A (ko) * | 2019-02-26 | 2021-09-30 | 에이에스엠엘 네델란즈 비.브이. | 이득 엘리먼트를 갖는 하전 입자 검출기 |
JP2022521572A (ja) * | 2019-02-26 | 2022-04-11 | エーエスエムエル ネザーランズ ビー.ブイ. | 利得要素を備えた荷電粒子検出器 |
JP7286778B2 (ja) | 2019-02-26 | 2023-06-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 利得要素を備えた荷電粒子検出器およびその製造方法 |
KR102660806B1 (ko) * | 2019-02-26 | 2024-04-26 | 에이에스엠엘 네델란즈 비.브이. | 이득 엘리먼트를 갖는 하전 입자 검출기 |
Also Published As
Publication number | Publication date |
---|---|
EP1620895B1 (en) | 2016-03-02 |
WO2004099740A2 (en) | 2004-11-18 |
EP1620895A2 (en) | 2006-02-01 |
JP2011017722A (ja) | 2011-01-27 |
JP4824542B2 (ja) | 2011-11-30 |
JP4824826B2 (ja) | 2011-11-30 |
WO2004099740A3 (en) | 2005-05-12 |
US20060278943A1 (en) | 2006-12-14 |
US7944012B2 (en) | 2011-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4824826B2 (ja) | モノリシックセンサ、ならびに、それを備えたセンサアレイ、検出器、および電子顕微鏡 | |
US8558234B2 (en) | Low voltage low light imager and photodetector | |
US6933503B2 (en) | Imaging X-ray detector based on direct conversion | |
AU2006334350B2 (en) | Semiconductor radiation detector optimized for detecting visible light | |
US7439561B2 (en) | Pixel sensor cell for collecting electrons and holes | |
US10535707B2 (en) | Monolithic silicon pixel detector, and systems and methods for particle detection | |
JP2002217399A (ja) | 電荷読出方法および固体撮像装置 | |
US7060523B2 (en) | Lithium-drifted silicon detector with segmented contacts | |
Kleinfelder et al. | Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region | |
US7825384B1 (en) | Quantum detector array | |
Morimoto | Megapixel SPAD cameras for time-resolved applications | |
EP3794643B1 (en) | Integration of a short-wave infrared detector with cmos compatible substrates | |
Wermes | Trends in pixel detectors: tracking and imaging | |
Lutz et al. | Novel pixel detectors for X-ray astronomy and other applications | |
EP3738147B1 (en) | Short-wave infrared detector and its integration with cmos compatible substrates | |
CN108933149B (zh) | 成像传感器像素及*** | |
Nikzad et al. | Direct detection of 0.1–20keV electrons with delta doped, fully depleted, high purity silicon pin diode arrays | |
Schmidt et al. | Extending the dynamic range of fully depleted pnCCDs | |
Rogalski | Photon detectors | |
Nikzad | High-performance silicon imagers and their applications in astrophysics, medicine and other fields | |
Marochkin | Novel Solutions for Improving Solid-State Photon Detector Performance and Manufacturing | |
Kleinfelder et al. | Integrated X-ray and charged particle active pixel CMOS sensor arrays | |
Kleinfelder et al. | Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon | |
JPH0730081A (ja) | 高エネルギ粒子検出用電荷結合型半導体装置及びその製造方法 | |
MX2008008816A (en) | Semiconductor radiation detector optimized for detecting visible light |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20071019 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100330 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100618 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100625 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100727 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100803 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100820 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100827 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110823 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110908 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4824542 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140916 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |