JP2007521398A - 固体から昇華した蒸気の流れの制御 - Google Patents
固体から昇華した蒸気の流れの制御 Download PDFInfo
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Abstract
Description
本発明は、圧力低下をほとんど伴わない、生成された蒸気の真空チャンバへの流れの正確な制御と組み合わされた、真空下での固体物質の制御された昇華に関する。1つの重要な用途は、イオンビームを生成するためのイオン源の排気されたイオン化チャンバへの制御された蒸気供給である。このビームは、半導体基板へのイオン注入のために使用され得る。別の重要な用途は、工作物との相互作用のための真空処理チャンバへの蒸気の制御された流れである。
イオン源のイオン化チャンバは、真空下で機能し、そしてイオン化されるべき物質が非常に正確にそして再現性よくガス形態で供給されることを必要とする。
昇華された蒸気の定常流れを真空チャンバへ送達するための蒸気送達システムは、固体物質の気化器、機械式スロットルバルブ、および圧力ゲージ、およびそれに続くこの真空チャンバへの蒸気導管を備える。蒸気流量は、気化器の温度およびこの機械式スロットルバルブのコンダクタンスの設定の両方により決定される。好ましい実施形態は、以下の特徴の1つ以上を有する。上記気化器の温度は、閉ループ制御により設定点温度に決定される。機械式スロットルバルブは、電気制御される(例えば、バルブ位置は、圧力ゲージの出力への閉ループ制御下にある)。このようにして、上記蒸気の流量は、ほぼ圧力ゲージの出力に比例する。気化器から真空チャンバへの蒸気に曝露されるすべての表面は、凝縮を防ぐために加熱される。ゲートバルブは、上流スロットルバルブとして作用する。ロータリーバタフライバルブは、上流スロットルバルブとして作用する。固体物質の固定投入量を採用すると、上記気化器の温度は、長期間の間定常状態に維持され得、その間に、その投入物が昇華するにつれて、上記スロットルバルブは、その作動範囲においてより低いコンダクタンスから徐々に開かれる。より大きいバルブの変位に到達すると、その温度が上昇され、そのバルブがより低いコンダクタンス設定に再調整されることが可能になり、そのより低いコンダクタンス設定からそのバルブは、再び開き得る。
大気圧以下で作動可能な、この固体物質のための加熱された気化器;ならびに
この気化器からこの真空チャンバへの蒸気送達通路であって、この蒸気送達通路は、スロットルバルブ、それに続く蒸気導管、このスロットルバルブとこの蒸気導管との間に置かれる大気圧以下に応答する圧力ゲージを備え、この昇華された蒸気に曝露される蒸気送達通路の表面(このスロットルバルブ、この圧力ゲージおよびこの蒸気導管の表面を含む)は、この固体材料の凝縮温度より上の温度に維持されるように適合されている、蒸気送達通路;ならびに
閉ループ制御システムであって、この閉ループ制御システムは、この圧力ゲージの出力に応答してこのスロットルバルブの下流の蒸気を大気圧以下に制御するためにこのスロットルバルブのコンダクタンスを変化させるように構築されている圧力ゲージを組込み、この真空チャンバへの蒸気の流れがこのスロットルバルブとこの蒸気導管との間の通路の領域における蒸気圧により決定される、閉ループ制御システム、
の組合せを備える。
図1Aは、イオン源10のダイヤグラムである。その構成およびそのイオン化作用の好ましい様式の詳細は、Horskyら、国際出願第PCT/US03/20197号(2003年6月26日出願):「An ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions」およびHorskyら、米国特許出願第10/183,768号(2002年6月26日出願):「Electron impact ion source」、米国特許第6,686,595号に詳細に開示され、これらの各々は、本明細書中で参考として援用される。イオン源10は、取り付けフランジ36を介してイオン注入器から外に出た真空チャンバにつなぐように作製される。従って、図1Aに示されるフランジ36の右側のイオン源10の部分は、高真空下(1×10−4Torr未満の圧力で)にある。このイオン源は、高電圧電源により高い電圧に維持され、そして高真空ハウジングの残りの部分から電気的に隔離されている。ガス状物質は、イオン化チャンバ44に導入され、そこでそのガス分子は、電子ビーム70Aまたは70Bからの電子衝撃によりイオン化される。この電子ビームは、反対側の開口部71Bまたは71Aを通ってイオン化チャンバ44を出るか、あるいはビームダンプ(beam dump)またはビームダンプとして作用するそのチャンバの壁により吸収され得る。図1Bに示される単一の電子銃およびビームダンプを組込む1つの実施形態では、電子ビームは、電子銃112のカソードから生じて、磁石130および磁極片125によって生成される磁場135により曲げられ、電子入口開口部71Aまたは71Bを通ってイオン化チャンバ44に入り、その結果、電子ビーム70Aまたは70Bが細長いイオン抽出開口部81に平行に移動する。イオン化チャンバ44を離れた後、電子ビーム70は、イオン化チャンバ44の外部に位置するビームダンプ72により止められる。従って、イオンは、イオン抽出開口部プレート80中のスロットとして現れるイオン抽出開口部81に隣接して生成される。次いでこのイオンは、抽出され、イオン抽出開口部プレート80の前に位置する抽出電極(示さず)によってエネルギーをもつ電子ビームに形成され、そして実質的に低電圧に保持される。
・一連の送達の蒸気コンダクタンスをできるだけ大きくする;
・高コンダクタンス、加熱可能バルブを使用する;
・最大構成要素温度を低く、例えば水素化ホウ素に対しては150℃未満に維持する;
・蒸気に対する表面接触を与えるすべての表面を温度制御し、凝縮を防ぐ;
・質量流れを直接測定しようとするよりはむしろ、スロットルバルブの下流の圧力についてループを閉じ、従来のMFCに対する必要性を排除する;
・供給物質が消失するにつれて、経時的に気化器温度を上方に調整することを可能にして、気化器による完全な消費を可能にし、そしてスロットルバルブをそのコンダクタンスの動的範囲の「スイートスポット」で作動することを可能にすることにより圧力サーボループを安定化する。
(1)Q(計量セクション)=(P(圧力センサー)−P(真空チャンバ))(C(計量セクション))
である(Qは、例えばg/秒単位の質量流れまたはスループットを表す)。
(2)Q(計量セクション)≒(P(圧力センサー))(C(計量セクション))
へと単純になることに留意のこと。
(3)Q(スロットルバルブを横切る)=Q(計量セクション)
である。
(4)Q(スロットルバルブを横切る)=(P(上流)−P(圧力センサ))(C(スロットルバルブ))
である。
(5)Q(スロットルバルブを横切る)=Q(計量セクション)=(P(上流)−P(真空チャンバ))(C(上流−真空チャンバ))
であることも明らかである。
(6)1/C(全体)=1/C1+1/C2+1/C3...1/Cn
この場合に対しては、上記気化器からの蒸気出口と真空チャンバ130との間の有効コンダクタンスを計算し得ると:
(7)1/C(上流−真空チャンバ)=1/C(スロットルバルブ)+1/C(計量セクション)
項を整理すると、
(8)C(上流−真空チャンバ)=((C(スロットルバルブ))(C(計量セクション))/(C(スロットルバルブ)+C(計量セクション))。
Claims (27)
- 真空チャンバ(130;258;260)への、固体物質(29;140;200)から昇華された蒸気の制御された流れを送達するための蒸気送達システムであって、
大気圧以下で作動可能な該固体物質のための加熱された気化器(28;145;205;400);ならびに
該気化器から該真空チャンバへの蒸気送達通路(37;237)であって、該蒸気送達通路は、蒸気導管(32;150;228)につながるスロットルバルブ(100;100’;235;430)、該スロットルバルブと該蒸気導管との間に置かれる大気圧以下に応答する圧力ゲージ(60;240;450)を備え、該スロットルバルブ、該圧力ゲージおよび該蒸気導管の表面を含む該昇華された蒸気に曝露される蒸気送達通路の表面は、該固体材料の凝縮温度より上の温度に維持されるように適合されている、蒸気送達通路;ならびに
閉ループ制御システム(60;120;240、250、245;PID2)であって、該閉ループ制御システムは、該スロットルバルブのコンダクタンスを変化させて該圧力ゲージの出力に応答して該スロットルバルブの下流の大気圧以下の蒸気を制御するように構築されている圧力ゲージを組込み、それにより該真空チャンバへの蒸気の流れが該スロットルバルブと該蒸気導管(32;150;228)との間の通路の領域における蒸気圧により決定される、閉ループ制御システム、
の組合せを備える、蒸気送達システム。 - 前記送達通路(37;237)の表面の温度を前記気化器の温度よりも高く保持するように適合されている温度制御システム(35)を備える、請求項1に記載の蒸気送達システム。
- 前記気化器からの段階がより遠いほど、漸進的により高い温度に保持されるように適合されている多段階の蒸気送達通路を有する、請求項2に記載の蒸気送達システム。
- 前記蒸気の流量が、前記気化器の温度のための制御システム(35;225;215;248;PID1)と前記スロットルバルブのコンダクタンスのための制御システム(60;120;240;250;245;PID2)との両方により決定されるように適合されている、請求項1、2または3に記載のシステム。
- 前記気化器の温度が、閉ループ制御により設定点温度に決定される、請求項1〜4のいずれかに記載のシステム。
- 前記スロットルバルブの最大N2コンダクタンスが少なくとも毎秒1リットルである、請求項1〜5のいずれかに記載の蒸気送達システム。
- 前記スロットルバルブが作動的に完全に開いている場合、該スロットルバルブを横切る圧力低下が、100mTorr未満である、請求項1〜6のいずれかに記載の蒸気送達システム。
- 前記スロットルバルブ(100;100’;235;430)の最大コンダクタンスが、前記蒸気導管(32;150;228)のコンダクタンスの少なくとも5倍である、請求項1〜7のいずれかに記載の蒸気送達システム。
- 前記スロットルバルブの最大コンダクタンスが、前記蒸気導管のコンダクタンスの少なくとも10倍である、請求項1〜8のいずれかに記載の蒸気送達システム。
- 前記スロットルバルブが可動位置ゲートバルブである、請求項1〜9のいずれかに記載の蒸気送達システム。
- 前記スロットルバルブがバタフライ型のものである、請求項1〜10のいずれかに記載の蒸気送達システム。
- 請求項1〜11のいずれかに記載の蒸気送達システムであって、固体物質(29;140;200)の再投入可能な固定投入量で作動するように構築されており、該固体物質は、該固体物質の蒸気放出領域を減らす様式で漸進的に消費され、そして前記スロットルバルブ(100;100’;235;430)を越える圧力の減少に応答して、該スロットルバルブの位置を所望の流れを回復するように再設定するように、そしてまた時折、該スロットルバルブがその最大有用コンダクタンスに近づく場合に、前記気化器(28;145;205;400)の温度を上昇させて該気化器内の圧力を高め、該スロットルバルブがその好ましい動的コンダクタンス範囲内で作動することを可能にするように構築されている、蒸気送達システム。
- スロットルバルブベースの検出制御システムと組み合わせた、請求項12に記載の蒸気送達システムであって、該検出制御システムは、前記気化器温度を前記設定点に維持し得る気化器加熱器のレギュレーターに気化器設定点温度値を提供し得、該検出制御システムは、該スロットルバルブのための所望の上限コンダクタンスを表す少なくとも1つの所定のバルブ変位値を保存し、該検出制御システムは、該スロットルバルブの位置をモニタリングするように構築されており、そして該バルブが該変位値に近づくかまたはそれに到達しようとするのを検出する際に、該検出制御システムは、レギュレータ加熱器に対して、入力246によるように、設定点温度値を上昇させて該スロットルバルブの上流の蒸気発生および蒸気圧の増加をもたらし、それにより該スロットルバルブの閉ループ制御が、該バルブを実質的により低いコンダクタンス位置に戻させることを可能にするように構築されている、蒸気送達システム。
- 請求項13に記載の蒸気送達システムであって、作動に適した温度上昇の所定の増分の参照表を備え、そして前記検出制御システムが、前記バルブが前記変位値に近づくかまたはそれに到達しようとするのを検出する際に、前記気化器温度設定点を該参照表の次の段階に増加させるのに有効である、上記送達システム。
- イオン化可能蒸気をイオン源に送達するような構成および配置である、請求項1〜14のいずれかに記載の蒸気送達システム。
- イオン化可能蒸気をイオン注入器のイオン源に送達するような構成および配置である、請求項15に記載の蒸気送達システム。
- 蒸気を工作物加工真空チャンバに送達するような構成および配置である、請求項1〜16のいずれかに記載の蒸気送達システム。
- 半導体に添加するための加工チャンバにイオン化可能蒸気を送達するような構成および配置である、請求項17に記載の蒸気送達システム。
- 請求項1〜18のいずれかに記載の蒸気送達システムであって、該蒸気送達システムは、その蒸気を高真空に運搬するように構築されており、前記スロットルバルブ(100;100’;235;430)の下流の大気圧以下の減少に応答して前記気化器(28;145;205;400)の温度を上昇させるように構築されている、蒸気送達システム。
- 請求項1〜19のいずれかに記載の蒸気送達システムであって、前記スロットルバルブのための制御システムが、サーボループを備え、該サーボループは、前記圧力ゲージ(60;240;450)の出力シグナルに応答して該スロットルバルブ(100;100’;235;430)の位置を調整し、該圧力ゲージにおける前記下流蒸気圧を設定点値に維持する、蒸気送達システム。
- 前記気化器が、デカボラン、B10H14を含みそして蒸発させるよう構成される、請求項1〜20のいずれかに記載の蒸気送達システム。
- 前記気化器が、オクタデカボラン、B18H22を含みそして蒸発させるよう構成される、請求項1〜20のいずれかに記載の蒸気送達システム。
- 前記気化器が、三塩化インジウム、InCl3を含みそして蒸発させるよう構成される、請求項1〜20のいずれかに記載の蒸気送達システム。
- 前記気化器が、トリメチルインジウム、In(CH3)3を含みそして蒸発させるよう構成される、請求項1〜20のいずれかに記載の蒸気送達システム。
- 前記気化器が、トリエチルアンチモン、Sb(C2H5)3を含みそして蒸発させるよう構成される、請求項1〜20のいずれかに記載の蒸気送達システム。
- 請求項1〜25のいずれかに記載の蒸気送達システムの使用により実施される、固体物質から昇華された蒸気の制御された流れを真空チャンバに送達する方法。
- 固体物質から昇華された蒸気の制御されたイオン化可能な流れをイオン化チャンバに送達するために、請求項15または16のいずれかに記載の蒸気送達システムの使用によって実施される、真空チャンバ中のイオンビームを生成する方法。
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KR20210133183A (ko) * | 2017-08-22 | 2021-11-05 | 프랙스에어 테크놀로지, 인코포레이티드 | 안티몬 함유 물질의 이온 주입기로의 저장 및 전달 |
JP7014888B2 (ja) | 2017-08-22 | 2022-02-01 | プラクスエア・テクノロジー・インコーポレイテッド | イオン注入のためのアンチモン含有材料 |
KR102562632B1 (ko) | 2017-08-22 | 2023-08-03 | 프랙스에어 테크놀로지, 인코포레이티드 | 안티몬 함유 물질의 이온 주입기로의 저장 및 전달 |
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