SG10201801299YA - Silicon implantation in substrates and provision of silicon precursor compositions therefor - Google Patents

Silicon implantation in substrates and provision of silicon precursor compositions therefor

Info

Publication number
SG10201801299YA
SG10201801299YA SG10201801299YA SG10201801299YA SG10201801299YA SG 10201801299Y A SG10201801299Y A SG 10201801299YA SG 10201801299Y A SG10201801299Y A SG 10201801299YA SG 10201801299Y A SG10201801299Y A SG 10201801299YA SG 10201801299Y A SG10201801299Y A SG 10201801299YA
Authority
SG
Singapore
Prior art keywords
silicon
provision
substrates
precursor compositions
implantation
Prior art date
Application number
SG10201801299YA
Inventor
Ying Tang
Joseph Sweeney
Tianniu Chen
James Mayer
Richard Ray
Oleg Byl
Sharad Yedave
Robert Kaim
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201801299YA publication Critical patent/SG10201801299YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
SG10201801299YA 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor SG10201801299YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361866918P 2013-08-16 2013-08-16

Publications (1)

Publication Number Publication Date
SG10201801299YA true SG10201801299YA (en) 2018-03-28

Family

ID=52468713

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201801299YA SG10201801299YA (en) 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor
SG11201601015RA SG11201601015RA (en) 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201601015RA SG11201601015RA (en) 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor

Country Status (8)

Country Link
US (1) US11062906B2 (en)
EP (1) EP3033765A4 (en)
JP (2) JP2016534560A (en)
KR (1) KR102306410B1 (en)
CN (1) CN105637616A (en)
SG (2) SG10201801299YA (en)
TW (2) TWI636011B (en)
WO (1) WO2015023903A1 (en)

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TWI707378B (en) * 2016-04-08 2020-10-11 美商瓦里安半導體設備公司 Method of implanting processing species into workpiece and implanting dopant into workpiece, and apparatus for processing workpiece
US20170294314A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
JP6730457B2 (en) * 2016-05-13 2020-07-29 インテグリス・インコーポレーテッド Fluorinated compositions for improving ion source performance in nitrogen ion implantation
US20170330725A1 (en) * 2016-05-13 2017-11-16 Axcelis Technologies, Inc. Lanthanated tungsten ion source and beamline components
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
US10177026B2 (en) * 2016-11-29 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and fabrication method therefor
SG11202105497PA (en) * 2018-12-15 2021-06-29 Entegris Inc Fluorine ion implantation system with non-tungsten materials and methods of using
KR20230044229A (en) 2020-08-26 2023-04-03 가부시키가이샤 사무코 Epitaxial silicon wafer and its manufacturing method, and semiconductor device manufacturing method

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