JP2007201259A - 半導体装置の製造方法及び半導体装置の実装装置 - Google Patents
半導体装置の製造方法及び半導体装置の実装装置 Download PDFInfo
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Abstract
【解決手段】半導体装置の実装装置60では、複数の発光素子40を一括して搬送するように構成された真空吸着部70を有する。この真空吸着部70は、複数の発光素子40を吸着するための複数の空気吸引孔72が所定間隔で設けられている。真空吸着部70を基板20の上方に移動させる。そして、真空吸着部70と基板20との相対位置のアライメントを行なう。そして、制御部80からの制御信号により電磁式三方弁76をa−cポート連通状態に切替える。これにより、電磁式三方弁76からの大気が複数の空気吸引孔72に導入され、発光素子40に対する真空吸着を解除する。その後、基板20上に載置された各発光素子40の下面に形成された各バンプ50と各配線パターン30とを接合する。
【選択図】図2A
Description
上記の陽極接合が行われると、シリコン基板120を構成するSiと、ガラス板140中の酸素とが結合し、接合力が良好で安定した接合が行われる。また、陽極接合では、樹脂材料を用いた接合と異なり、発光素子124が封止される凹部122の内部空間を汚染するようなガス、不純物などが殆ど発生することがない。
20,120 基板
30 配線パターン
40,124 発光素子
60 半導体装置の実装装置
70,170 真空吸着部
72,172 空気吸引孔
76 電磁式三方弁
78 真空発生装置
80 制御部
122 凹部
126 壁部
128 傾斜面
140 ガラス板
Claims (8)
- 基板に複数の素子を実装する半導体装置の製造方法において、
空気を吸引する複数の空気吸引孔を有する真空吸着部に前記複数の素子を吸着させる工程と、
前記真空吸着部に吸着された前記複数の素子を前記基板上の所定位置に載置する工程と、
前記複数の素子を前記基板の複数の所定位置に載置して前記真空吸着部による前記複数の素子に対する吸着を解除する工程と、
前記複数の素子の端子を前記基板の配線パターンに同時に接合する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記基板に前記素子を囲む壁部を形成する工程と、
をさらに有することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記複数の壁部の上端を透過性のカバーにより封止する工程をさらに有することを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記壁部は、前記素子の上方に向けて広がるように傾斜された傾斜面を有することを特徴とする請求項2または3の何れかに記載の半導体装置の製造方法。
- 前記壁部は、前記素子から発光された光を反射させる反射面を有することを特徴とする請求項2乃至4の何れかに記載の半導体装置の製造方法。
- 前記複数の空気吸着孔は、前記基板の各素子取付位置に対応する間隔で配置されたことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記複数の素子は、粘着テープに貼着されており、前記真空吸着部に対して前記粘着テープから離間させると共に前記空気吸引孔に吸着されることを特徴とする請求項1乃至4の何れかに記載の半導体装置の製造方法。
- 基板に複数の素子を実装する半導体装置の実装装置において、
空気を吸引する複数の空気吸引孔により前記複数の素子を吸着する真空吸着部と、
前記複数の空気吸引孔より空気を吸引する真空発生装置と、
前記真空発生装置と前記複数の空気吸引孔との間に配された切替弁と、
前記複数の素子を前記基板上の所定位置に搬送するまで前記切替弁を前記真空発生装置と前記複数の空気吸引孔とを連通して前記複数の素子を吸着し、前記複数の素子を前記基板上の所定位置に載置した後、前記切替弁を切替えて前記複数の素子に対する吸着を解除する制御部と、
を有することを特徴とする半導体装置の実装装置。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010038025A2 (en) * | 2008-10-01 | 2010-04-08 | Optovate Limited | Illumination apparatus |
JP2013070060A (ja) * | 2011-09-24 | 2013-04-18 | Tpk Touch Solutions (Xiamen) Inc | 基板の積層方法 |
JP2019068055A (ja) * | 2017-09-28 | 2019-04-25 | 芝浦メカトロニクス株式会社 | 素子実装装置、素子実装方法及び素子実装基板製造方法 |
CN112017988A (zh) * | 2019-05-31 | 2020-12-01 | 云谷(固安)科技有限公司 | 转移设备 |
WO2020242098A1 (ko) * | 2019-05-24 | 2020-12-03 | (주)포인트엔지니어링 | 마이크로 led 디스플레이 제작 방법 및 이를 이용한 마이크로 led 디스플레이 |
JP2022027096A (ja) * | 2020-07-31 | 2022-02-10 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102609560B1 (ko) * | 2017-09-08 | 2023-12-04 | 삼성전자주식회사 | 반도체 제조 장치 |
US11637211B2 (en) | 2021-02-02 | 2023-04-25 | Rockwell Collins, Inc. | Optically clear thermal spreader for status indication within an electronics package |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636196A (en) * | 1979-09-03 | 1981-04-09 | Sony Corp | Apparatus for assembling electronic device circuit |
JPH0369200A (ja) * | 1989-08-08 | 1991-03-25 | Sanyo Electric Co Ltd | 電子部品自動装着装置 |
JPH0677317A (ja) * | 1992-08-26 | 1994-03-18 | Mitsubishi Electric Corp | 半導体装置の組立方法 |
JP2000058924A (ja) * | 1998-08-06 | 2000-02-25 | Shichizun Denshi:Kk | 表面実装型発光ダイオード及びその製造方法 |
JP2000151189A (ja) * | 1998-11-12 | 2000-05-30 | Matsushita Electric Ind Co Ltd | 電子部品の実装装置および実装方法 |
JP2003133708A (ja) * | 2001-10-30 | 2003-05-09 | Sony Corp | 電子部品及びその転写方法、回路基板及びその製造方法、並びに表示装置及びその製造方法 |
JP2003163378A (ja) * | 2001-11-26 | 2003-06-06 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003243720A (ja) * | 2002-02-14 | 2003-08-29 | Citizen Electronics Co Ltd | 発光ダイオードの製造方法 |
JP2003311671A (ja) * | 2002-04-26 | 2003-11-05 | Kuroda Precision Ind Ltd | 切換弁装置 |
JP2004165244A (ja) * | 2002-11-11 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 半導体チップのピックアップ装置及び方法 |
JP2004179523A (ja) * | 2002-11-28 | 2004-06-24 | Matsushita Electric Ind Co Ltd | 電子部品実装装置 |
JP2005117019A (ja) * | 2003-09-17 | 2005-04-28 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2006
- 2006-01-27 JP JP2006019285A patent/JP4758780B2/ja active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636196A (en) * | 1979-09-03 | 1981-04-09 | Sony Corp | Apparatus for assembling electronic device circuit |
JPH0369200A (ja) * | 1989-08-08 | 1991-03-25 | Sanyo Electric Co Ltd | 電子部品自動装着装置 |
JPH0677317A (ja) * | 1992-08-26 | 1994-03-18 | Mitsubishi Electric Corp | 半導体装置の組立方法 |
JP2000058924A (ja) * | 1998-08-06 | 2000-02-25 | Shichizun Denshi:Kk | 表面実装型発光ダイオード及びその製造方法 |
JP2000151189A (ja) * | 1998-11-12 | 2000-05-30 | Matsushita Electric Ind Co Ltd | 電子部品の実装装置および実装方法 |
JP2003133708A (ja) * | 2001-10-30 | 2003-05-09 | Sony Corp | 電子部品及びその転写方法、回路基板及びその製造方法、並びに表示装置及びその製造方法 |
JP2003163378A (ja) * | 2001-11-26 | 2003-06-06 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003243720A (ja) * | 2002-02-14 | 2003-08-29 | Citizen Electronics Co Ltd | 発光ダイオードの製造方法 |
JP2003311671A (ja) * | 2002-04-26 | 2003-11-05 | Kuroda Precision Ind Ltd | 切換弁装置 |
JP2004165244A (ja) * | 2002-11-11 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 半導体チップのピックアップ装置及び方法 |
JP2004179523A (ja) * | 2002-11-28 | 2004-06-24 | Matsushita Electric Ind Co Ltd | 電子部品実装装置 |
JP2005117019A (ja) * | 2003-09-17 | 2005-04-28 | Renesas Technology Corp | 半導体装置の製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010038025A2 (en) * | 2008-10-01 | 2010-04-08 | Optovate Limited | Illumination apparatus |
WO2010038025A3 (en) * | 2008-10-01 | 2010-06-24 | Optovate Limited | Illumination apparatus and method of manufacturing the same |
CN102171503A (zh) * | 2008-10-01 | 2011-08-31 | 奥普托维特有限公司 | 照明设备及其制造方法 |
US8985810B2 (en) | 2008-10-01 | 2015-03-24 | Optovate Limited | Illumination apparatus |
JP2013070060A (ja) * | 2011-09-24 | 2013-04-18 | Tpk Touch Solutions (Xiamen) Inc | 基板の積層方法 |
JP2019068055A (ja) * | 2017-09-28 | 2019-04-25 | 芝浦メカトロニクス株式会社 | 素子実装装置、素子実装方法及び素子実装基板製造方法 |
WO2020242098A1 (ko) * | 2019-05-24 | 2020-12-03 | (주)포인트엔지니어링 | 마이크로 led 디스플레이 제작 방법 및 이를 이용한 마이크로 led 디스플레이 |
CN112017988A (zh) * | 2019-05-31 | 2020-12-01 | 云谷(固安)科技有限公司 | 转移设备 |
CN112017988B (zh) * | 2019-05-31 | 2024-03-19 | 成都辰显光电有限公司 | 转移设备 |
JP2022027096A (ja) * | 2020-07-31 | 2022-02-10 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
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