JP2019153718A - デバイスの移設方法 - Google Patents
デバイスの移設方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000000872 buffer Substances 0.000 claims abstract description 47
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 9
- 230000006378 damage Effects 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 230000035699 permeability Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 149
- 239000004065 semiconductor Substances 0.000 description 24
- 238000003384 imaging method Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Led Device Packages (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Wire Bonding (AREA)
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- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- External Artificial Organs (AREA)
Abstract
Description
13 基板
13a 表面
13b 裏面
15 分割予定ライン
17 デバイス
19 光デバイスウェーハ
21 基板
21a 表面
21b 裏面
23 バッファ層
25 光デバイス
27 p型半導体層
29 n型半導体層
31 テープ
31a 表面
31b 裏面
33 フレーム
35 実装基板
37R 電極
37G 電極
37B 電極
2 レーザー加工装置
4 チャックテーブル
6 レーザー加工ユニット
8 ケーシング
10 集光器
12 撮像手段
14 クランプ
20 移設ユニット
22 基台
24 吸着パッド
26 ローラー
Claims (4)
- 複数のデバイスを複数の電極を備える実装基板に移設するデバイスの移設方法であって、
基板の表面側にバッファ層を介して形成された複数の該デバイスにエキスパンド性を有するテープを貼付するテープ貼付ステップと、
該テープ貼付ステップを実施した後、該基板の裏面側から該基板に対しては透過性を有し該バッファ層に対しては吸収性を有する波長のレーザービームを該バッファ層に照射し、該バッファ層を破壊するバッファ層破壊ステップと、
該バッファ層破壊ステップを実施した後、該テープを該基板から離れる方向に移動させて該基板と複数の該デバイスとを分離することにより、該基板に形成されていた複数の該デバイスを該テープに転写する転写ステップと、
該転写ステップを実施した後、該テープに貼付された複数の該デバイスの配置が複数の該電極の配置と対応するように、該テープを拡張するテープ拡張ステップと、
該テープ拡張ステップを実施した後、拡張された該テープに貼付された複数の該デバイスを複数の該電極に一括でボンディングするダイボンディングステップと、を含むことを特徴とする、デバイスの移設方法。 - 該デバイスはLEDであることを特徴とする、請求項1記載のデバイスの移設方法。
- 該テープ拡張ステップを実施する前または後に、該デバイスの該テープと接する面を露出させるステップを更に含むことを特徴とする、請求項1記載のデバイスの移設方法。
- 該テープは、紫外線硬化型樹脂からなる粘着剤を含み、
該テープ拡張ステップを実施した後、該テープに紫外線を照射して該粘着材を硬化させるステップを更に含むことを特徴とする、請求項1記載のデバイスの移設方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018038844A JP7072977B2 (ja) | 2018-03-05 | 2018-03-05 | デバイスの移設方法 |
TW108106264A TWI790353B (zh) | 2018-03-05 | 2019-02-25 | 元件的移設方法 |
KR1020190022252A KR20190105504A (ko) | 2018-03-05 | 2019-02-26 | 디바이스의 이설 방법 |
US16/289,929 US10658220B2 (en) | 2018-03-05 | 2019-03-01 | Device transferring method |
CN201910159654.1A CN110233129B (zh) | 2018-03-05 | 2019-03-04 | 器件的移设方法 |
DE102019202876.4A DE102019202876B4 (de) | 2018-03-05 | 2019-03-04 | Bauelementübertragungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018038844A JP7072977B2 (ja) | 2018-03-05 | 2018-03-05 | デバイスの移設方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019153718A true JP2019153718A (ja) | 2019-09-12 |
JP7072977B2 JP7072977B2 (ja) | 2022-05-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2018038844A Active JP7072977B2 (ja) | 2018-03-05 | 2018-03-05 | デバイスの移設方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10658220B2 (ja) |
JP (1) | JP7072977B2 (ja) |
KR (1) | KR20190105504A (ja) |
CN (1) | CN110233129B (ja) |
DE (1) | DE102019202876B4 (ja) |
TW (1) | TWI790353B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022230953A1 (ja) * | 2021-04-27 | 2022-11-03 | 昭和電工マテリアルズ株式会社 | Led移設部材及びled装置の製造方法 |
WO2022230952A1 (ja) * | 2021-04-27 | 2022-11-03 | 昭和電工マテリアルズ株式会社 | Led移設部材及びled装置の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7195700B2 (ja) * | 2018-11-12 | 2022-12-26 | 株式会社ディスコ | リフトオフ方法 |
TWI757648B (zh) | 2019-10-21 | 2022-03-11 | 隆達電子股份有限公司 | 取料裝置 |
KR102351045B1 (ko) * | 2019-12-19 | 2022-01-14 | 한국기계연구원 | 마이크로 소자의 간격 조절 전사방법 |
KR102600183B1 (ko) * | 2020-11-27 | 2023-11-08 | 주식회사 아큐레이저 | 반도체 소자의 전사 방법 |
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US10658220B2 (en) | 2020-05-19 |
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