JP2007180556A - 導電性緩衝中間層構造を有する炭化ケイ素基質上の第iii族窒化物フォトニックデバイス - Google Patents
導電性緩衝中間層構造を有する炭化ケイ素基質上の第iii族窒化物フォトニックデバイス Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 34
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 74
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 230000005693 optoelectronics Effects 0.000 claims abstract description 28
- 229910052738 indium Inorganic materials 0.000 claims abstract description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 26
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 14
- 230000002411 adverse Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000006378 damage Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 76
- 235000012431 wafers Nutrition 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000012928 buffer substance Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02518—Deposited layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L21/02642—Mask materials other than SiO2 or SiN
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Abstract
【解決手段】緩衝構造の結晶構造内に複数の所定の応力除去領域を含む応力吸収構造を含む第III族窒化物活性層を形成する。
【選択図】なし
Description
本発明は禁止帯の幅が広い物質におけるフォトニックデバイスに関し、とくに炭化ケイ素基質に第III族窒化物活性層を形成させたフォトニックデバイスに関する。
発明の背景
ダイアモンド、炭化ケイ素、および窒化ガリウムのような禁止帯の幅が広い半導体物質は、その幅広い禁止帯の特徴がヒ化ケイ素またはヒ化ガリウムのような他の半導体よりも高エネルギー(したがって高周波及び短波長を有する)の光を発する可能性を該半導体にもたらすために近年著しい関心が寄せられている。とくに、炭化ケイ素、窒化ガリウム、及びある種の他の第III族窒化物は高エネルギーの青色の部分を含む可視スペクトル全般に可視光を生じるだけの大きい禁止帯幅を有する。従ってこれらは青及び緑色の発光を有する半導体レーザー及び発光ダイオード(LEDs)の基礎となる。
発明の目的及び要約
したがって、本発明の目的は、第III族窒化物活性層、導電性炭化ケイ素基質、および導電性緩衝層を有するが、該物質および層を今日まで妨げて来た破壊及び他の問題を無くしたフォトニックデバイス及びそのウェーハー前駆物質を製造することにある。
詳細な説明
図1は大まかに20で表す先行技術のデバイスの断面図である。図1に示すように、デバイス20は炭化ケイ素基質21、基質21の「背面」への接点22、第III族窒化物活性層23、導電性ではなくて絶縁性である緩衝層24、導電性ケイ素緩衝21及び活性層23との間の電気接点となる短接点25、および回路を完成して動作中にデバイス全体に電流を流させる上面接点26を含む。
実施例
導電性緩衝LEDおよびレーザーダイオードを生成させる現行法では、まずGaNドットを付着させる。GaNドットの目的はSiC基質およびSiドープAlGaN緩衝層間のバリヤーを減少させることである。これは構造中の他のエピタキシャル層に用いられるよりもかなり低い温度で行われる。静電放電が悪影響を与えないようにドットを比較的小さく保つことが重要である。GaNドットは約6秒で付着させ、さらにSiドープAl10Ga90Nで約15秒間「キャッピング」する。このキャッピングの目的は加熱時の GaNの解離を防ぐことである。この材料システムにおいて、NH3/H2雰囲気中ではAlGaNはGaNよりも安定であるので、AlのGaNへの添加、すなわちAl(1-x)Ga(x)Nは物質の解離速度を減少させる。ドットのキャッピング後、温度を緩衝層温度までランプ(ramp)させる。ランプ後緩衝層の成長が始まる前に約2分間温度を安定させる。
(1)第III族窒化物デバイスのウェーハー前駆物質であって、緩衝物質の成長に対して抵抗性がある物質から形成される所定パターンの小さな応力吸収メサ構造を含む炭化ケイ素基質ウェーハーおよび前記基質の露出面に付着された緩衝層
を含むウェーハー前駆物質。
(2)緩衝物質の成長に対して抵抗性がある前記物質が二酸化ケイ素(SiO2)、窒化ケイ素及び酸化アルミニウムからなる群から選ばれる(1)記載のウェーハー前駆物質。
(3)前記緩衝層が窒化ガリウム及び窒化インジウムガリウムからなる群から選ばれる(1)記載のウェーハー前駆物質。
(4)(1)記載の該ウェーハー前駆物質から形成され、さらに第III族窒化物活性層を有するオプトエレクトロニックダイオードを含むオプトエレクトロニックデバイス。
(5)前記ダイオードがp−nホモ接合、p−nシングルおよびダブルヘテロ接合、ならびにp−n量子接合ウェル構造からなる群から選ばれ、そして前記炭化ケイ素基質が3C,4H、6H、及び15Rポリタイプからなる群から選ばれるポリタイプを有する(4)記載のオプトエレクトロニックデバイス。
(6)前記第III族窒化物活性層が窒化ガリウムおよび窒化インジウムガリウムからなる群から選ばれる(4)記載のオプトエレクトロニックデバイス。
(7)炭化ケイ素基質に第III族窒化物オプトエレクトロニックデバイスを生成させる方法であって、
該炭化ケイ素基質表面に緩衝物質の成長に対して抵抗性がある物質から所定パターンのメサ構造を形成させ;
該炭化ケイ素基質の露出面に緩衝層を形成させ;そして
該緩衝層に第III族窒化物活性層を有するオプトエレクトロニックデバイスを形成させる
ことを含む方法。
(8)緩衝物質の成長に対して抵抗性がある前記物質が二酸化ケイ素、窒化ケイ素、および酸化アルミニウムからなる群から選ばれる(7)記載の方法。
(9)前記緩衝物質が窒化ガリウムおよび窒化インジウムガリウムからなる群から選ばれる(7)記載の方法。
(10)第III族窒化物活性層を有するオプトエレクトロニックデバイスをを形成させる工程が、窒化ガリウム及び窒化インジウムガリウムからなる群から選ばれる活性層を有するデバイスを形成させることを含む(7)記載の方法。
Claims (22)
- 第III族窒化物デバイスのウェーハー前駆物質であって、
炭化ケイ素基質;
前記炭化ケイ素基質上の窒化アルミニウムガリウム緩衝層;および
前記炭化ケイ素基質表面の窒化ガリウム及び窒化インジウムガリウムからなる群から選ばれる複数の分離した結晶部分
を含むウェーハー前駆物質。 - 前記分離した結晶部分が前記基質と前記緩衝層との間のヘテロバリヤーを最小にするかまたは無くすのに十分な量及びサイズで存在する請求項1記載のウェーハー前駆物質。
- 前記窒化アルミニウムガリウム緩衝層が10ないし15パーセントの原子分率のアルミニウムを有する請求項1記載のウェーハー前駆物質。
- 前記複数の分離した結晶部分が平方ミクロン当たり40ないし60個存在する請求項1記載のウェーハー前駆物質。
- 前記複数の分離した結晶部分は直径が0.01ないし0.1ミクロンである請求項1記載のウェーハー前駆物質。
- 炭化ケイ素基質;
前記炭化ケイ素基質表面の窒化ガリウム及び窒化インジウムガリウムからなる群から選ばれる複数の分離した結晶部分;
前記炭化ケイ素基質上の窒化アルミニウムガリウム緩衝層;および
前記緩衝層上の第III族窒化物活性領域
を含むオプトエレクトロニックデバイス。 - 前記活性領域がp−ホモ接合、p−nシングルおよびダブルヘテロ接合、ならびにp−n量子接合ウェル構造からなる群から選ばれる請求項6記載のオプトエレクトロニックデバイス。
- 前記炭化ケイ素基質が3C、4H、6Hおよび15Rポリタイプからなる群から選ばれるポリタイプを有する請求項6記載のオプトエレクトロニックデバイス。
- 前記第III族窒化物活性層が窒化ガリウム及び窒化インジウムガリウムからなる群から選ばれる請求項6記載のオプトエレクトロニックデバイス。
- 発光ダイオードを含む請求項6記載のオプトエレクトロニックデバイス。
- 請求項10記載の発光ダイオードを包含するピクセル。
- 請求項11記載の複数のピクセルを包含するディスプレー。
- レーザーダイオードを含む請求項6記載のオプトエレクトロニックデバイス。
- 炭化ケイ素基質に第III族窒化物オプトエレクトロニックデバイスを生成させる方法であって、
炭化ケイ素基質表面に窒化ガリウムおよび窒化インジウムガリウムからなる群から選ばれる複数の分離した結晶部分を形成させ;
該分離した結晶部分を有する該炭化ケイ素基質表面に窒化アルミニウムガリウム緩衝を形成させ、この場合に、該分離した結晶部分が該炭化ケイ素基質と該窒化アルミニウムガリウム緩衝層との間のヘテロバリヤーを最小にするかまたは無くし;そして
該緩衝層に第III族窒化物活性層を有するオプトエレクトロニックデバイスを形成させる
ことを含む方法。 - 前記窒化アルミニウムガリウム緩衝を形成させる工程は、10ないし15パーセントの原子分率のアルミニウムを有する窒化アルミニウムガリウム緩衝を形成させることを含む請求項14記載の方法。
- 該ヘテロバリヤーを最小にするかまたは無くすのに十分な量ではあるが、該炭化ケイ素基質に形成してできたダイオードデバイスの機能に悪影響を与えるかまたは破壊すると思われる量よりは少ない量の該分離した結晶部分を形成させることを含む請求項14記載の方法。
- 前記分離した結晶部分を形成させる工程は、前記分離した結晶部分を平方ミクロン当たり40ないし60個形成させることを含む請求項14記載の方法。
- 前記分離した結晶部分を形成させる工程は、直径が0.01ないし0.1ミクロンである寸法を有する前記部分形成させることを含む請求項14記載の方法。
- 前記オプトエレクトロニックデバイスを形成させる工程は、発光ダイオード形成させることを含む請求項14記載の方法。
- 更に、請求項19記載の発光ダイオードを包含するピクセルを形成させる工程を含む請求項19記載の方法。
- 更に、請求項20記載の複数のピクセルを包含するディスプレーを形成させる工程を含む請求項20記載の方法。
- 前記オプトエレクトロニックデバイスを形成させる工程は、レーザーダイオードを形成させることを含む請求項14記載の方法。
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US08/944,547 US6201262B1 (en) | 1997-10-07 | 1997-10-07 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
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JP2000515300A Expired - Lifetime JP4061019B2 (ja) | 1997-10-07 | 1998-10-06 | 導電性緩衝中間層構造を有する炭化ケイ素基質上の第iii族窒化物フォトニックデバイス |
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EP (1) | EP1027736A1 (ja) |
JP (2) | JP4061019B2 (ja) |
KR (1) | KR100592897B1 (ja) |
CN (1) | CN1185719C (ja) |
AU (1) | AU9689098A (ja) |
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WO (1) | WO1999018617A1 (ja) |
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JPS6376451A (ja) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | 化合物半導体結晶基板の製造方法 |
JPH0536602A (ja) * | 1991-07-30 | 1993-02-12 | Toshiba Corp | 六方晶半導体の結晶成長方法 |
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US4396929A (en) * | 1979-10-19 | 1983-08-02 | Matsushita Electric Industrial Company, Ltd. | Gallium nitride light-emitting element and method of manufacturing the same |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
EP0352472A3 (en) | 1988-07-25 | 1991-02-06 | Texas Instruments Incorporated | Heteroepitaxy of lattice-mismatched semiconductor materials |
GB8905511D0 (en) | 1989-03-10 | 1989-04-19 | British Telecomm | Preparing substrates |
US5043773A (en) * | 1990-06-04 | 1991-08-27 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates |
US5276338A (en) * | 1992-05-15 | 1994-01-04 | International Business Machines Corporation | Bonded wafer structure having a buried insulation layer |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
JP3243111B2 (ja) | 1993-03-15 | 2002-01-07 | 株式会社東芝 | 化合物半導体素子 |
US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5592501A (en) | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
US5661074A (en) | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
EP1081818B1 (en) * | 1995-09-18 | 2004-08-18 | Hitachi, Ltd. | Semiconductor laser devices |
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US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6459100B1 (en) * | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
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1997
- 1997-10-07 US US08/944,547 patent/US6201262B1/en not_active Expired - Lifetime
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1998
- 1998-10-06 KR KR1020007003789A patent/KR100592897B1/ko not_active IP Right Cessation
- 1998-10-06 AU AU96890/98A patent/AU9689098A/en not_active Abandoned
- 1998-10-06 CN CNB988110652A patent/CN1185719C/zh not_active Expired - Lifetime
- 1998-10-06 JP JP2000515300A patent/JP4061019B2/ja not_active Expired - Lifetime
- 1998-10-06 WO PCT/US1998/021160 patent/WO1999018617A1/en active IP Right Grant
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- 1998-10-06 EP EP98950987A patent/EP1027736A1/en not_active Withdrawn
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2000
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- 2000-11-22 US US09/718,654 patent/US6373077B1/en not_active Expired - Lifetime
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6376451A (ja) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | 化合物半導体結晶基板の製造方法 |
JPH0536602A (ja) * | 1991-07-30 | 1993-02-12 | Toshiba Corp | 六方晶半導体の結晶成長方法 |
Also Published As
Publication number | Publication date |
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WO1999018617A1 (en) | 1999-04-15 |
CN1185719C (zh) | 2005-01-19 |
KR100592897B1 (ko) | 2006-06-23 |
US6373077B1 (en) | 2002-04-16 |
JP4061019B2 (ja) | 2008-03-12 |
US20020008241A1 (en) | 2002-01-24 |
US6492193B1 (en) | 2002-12-10 |
CA2305203A1 (en) | 1999-04-15 |
CN1278949A (zh) | 2001-01-03 |
AU9689098A (en) | 1999-04-27 |
US6201262B1 (en) | 2001-03-13 |
US6630690B2 (en) | 2003-10-07 |
KR20010031003A (ko) | 2001-04-16 |
CA2305203C (en) | 2005-11-29 |
JP4966645B2 (ja) | 2012-07-04 |
JP2001519603A (ja) | 2001-10-23 |
EP1027736A1 (en) | 2000-08-16 |
US6187606B1 (en) | 2001-02-13 |
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