JP2007095739A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2007095739A JP2007095739A JP2005279397A JP2005279397A JP2007095739A JP 2007095739 A JP2007095739 A JP 2007095739A JP 2005279397 A JP2005279397 A JP 2005279397A JP 2005279397 A JP2005279397 A JP 2005279397A JP 2007095739 A JP2007095739 A JP 2007095739A
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- Prior art keywords
- insulating film
- semiconductor structure
- wiring
- layer
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 229910000679 solder Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005855 radiation Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 109
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 239000010953 base metal Substances 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 21
- 239000010949 copper Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
【解決手段】 別の半導体構成体61およびチップ部品71はシールドカバー73によって覆われている。これにより、半導体構成体3からの放射雑音が別の半導体構成体61およびチップ部品71に与える妨害を軽減することができる。
【選択図】 図1
Description
図1はこの発明の第1実施形態としての半導体装置の断面図を示す。この半導体装置は、ガラス布基材エポキシ樹脂などからなる平面方形状のベース板1を備えている。ベース板1の上面には銅箔からなるグラウンド層2がべた状に設けられている。グラウンド層2の上面には、ベース板1のサイズよりもある程度小さいサイズの平面方形状の半導体構成体3の下面がダイボンド材からなる接着層4を介して接着されている。
図2はこの発明の第2実施形態としての半導体装置の断面図を示す。この半導体装置において、図1に示す半導体装置と大きく異なる点は、シールドカバー73で少なくとも第1の上層絶縁膜22、絶縁層21、ベース板1、下層絶縁膜43および最下層絶縁膜47の側面を覆った点である。
上記各実施形態では、最上層絶縁膜30上に半田ボール32を設け、最下層絶縁膜47下に別の半導体構成体71およびチップ部品72を搭載した場合について説明したが、これとは逆に、最上層絶縁膜30上に別の半導体構成体71およびチップ部品72を搭載し、最下層絶縁膜47下に半田ボール32を設けるようにしてもよい。また、別の半導体構成体71は、半導体構成体3と同じような構造のものであってもよい。
2 グラウンド層
3 半導体構成体
13 柱状電極(外部接続用電極)
21 絶縁層
22 第1の上層絶縁膜
25 第1の上層配線
26 第2の上層絶縁膜
29 第2の上層配線
30 最上層絶縁膜
32 半田ボール
42 第1の下層配線
43 下層絶縁膜
46 第2の下層配線
47 最下層絶縁膜
52 貫通孔
53 上下導通部
61 別の半導体構成体
71 チップ部品
73 シールドカバー
81 溝
82 側面上下導通部
Claims (5)
- ベース板と、前記ベース板上に設けられ、デジタル系回路部を構成する半導体基板および該半導体基板上に設けられた複数の外部接続用電極を有する半導体構成体と、前記半導体構成体の周囲における前記ベース板上に設けられた絶縁層と、前記半導体構成体および前記絶縁層上に設けられた上層絶縁膜と、前記上層絶縁膜上に前記半導体構成体の外部接続用電極に接続されて設けられた上層配線と、前記ベース板下に設けられた下層配線と、前記ベース板、前記絶縁層および前記上層絶縁膜に設けられた貫通孔内に前記上層配線の少なくとも一部と前記下層配線の少なくとも一部とを接続するように設けられた上下導通部と、前記上層配線と前記下層配線とのうちのいずれか一方の配線に接続されて搭載されたアナログ系回路部を構成する電子部品と、前記電子部品を覆うように設けられたシールドカバーとを具備することを特徴とする半導体装置。
- 請求項1に記載の発明において、前記シールドカバーは、前記電子部品の搭載側に該電子部品を覆うように設けられ、且つ、前記一方の配線のうちのグラウンド用の配線に接続されていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記シールドカバーは、前記ベース板、前記絶縁層および前記上層絶縁膜の側面を覆うように設けられ、且つ、当該側面に設けられたグラウンド用の側面上下導通部に接続されていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記半導体構成体は、前記外部接続用電極としての柱状電極を有するものであることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記上層配線と前記下層配線とのうちの他方の配線の接続パッド部上に半田ボールが設けられていることを特徴とする半導体装置。
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TWI503933B (zh) * | 2013-01-03 | 2015-10-11 | 矽品精密工業股份有限公司 | 半導體封裝件及其製法 |
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WO2020250795A1 (ja) * | 2019-06-10 | 2020-12-17 | 株式会社ライジングテクノロジーズ | 電子回路装置 |
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