JP2007088155A - 表面実装型led基板 - Google Patents
表面実装型led基板 Download PDFInfo
- Publication number
- JP2007088155A JP2007088155A JP2005274075A JP2005274075A JP2007088155A JP 2007088155 A JP2007088155 A JP 2007088155A JP 2005274075 A JP2005274075 A JP 2005274075A JP 2005274075 A JP2005274075 A JP 2005274075A JP 2007088155 A JP2007088155 A JP 2007088155A
- Authority
- JP
- Japan
- Prior art keywords
- led
- substrate
- dicing
- conductor pattern
- leds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims description 59
- 239000011347 resin Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 25
- 238000007789 sealing Methods 0.000 claims description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000000593 degrading effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】 表面実装型LEDが多面取りされる表面実装型LED基板1において、LEDチップが実装される表面側から側面側を経て裏面側に回り込んだ導体パターン3a、3bの少なくとも前記裏面側に回り込んだ導体パターン3a、3b上の少なくとも前記多面取りされた表面実装型LEDを個々の表面実装型LEDに分離・分割するための切断線上にレジスト層5を設けることによって、多面取りされた表面実装型LEDを切断する際に導体パターン3a、3bの切断面に生じるバリをレジスト層5によって抑制するようにした。
【選択図】 図2
Description
2 基材
3a、3b 導体パターン
4a ダイボンディングパッド
4b ワイヤボンディングパッド
5 レジスト膜
6 極性マーク
7 LEDチップ
8 ボンディングワイヤ
9 封止樹脂
10 表面実装型LED(LED)
Claims (2)
- 所定の間隔を保って実装された複数のLEDチップが封止樹脂によって樹脂封止されて表面実装型LEDが多面取りされる表面実装型LED基板であって、前記表面実装型LED基板はLEDチップが実装される表面側から側面側を経て裏面側に回り込んだ導体パターンが形成されており、少なくとも前記裏面側に回り込んだ導体パターン上の少なくとも前記多面取りされた表面実装型LEDを個々の表面実装型LEDに分離・分割するための切断線上にレジスト層が形成されていることを特徴とする表面実装型LED基板。
- 前記導体パターンの前記レジスト層が形成された部分以外には金メッキが施されていることを特徴とする請求項1に記載の表面実装型LED基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005274075A JP2007088155A (ja) | 2005-09-21 | 2005-09-21 | 表面実装型led基板 |
US11/463,116 US7714346B2 (en) | 2005-09-21 | 2006-08-08 | Surface mounting LED substrate and LED |
CN200610138935.1A CN1937269B (zh) | 2005-09-21 | 2006-09-21 | 表面安装型led基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005274075A JP2007088155A (ja) | 2005-09-21 | 2005-09-21 | 表面実装型led基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007088155A true JP2007088155A (ja) | 2007-04-05 |
Family
ID=37883179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005274075A Pending JP2007088155A (ja) | 2005-09-21 | 2005-09-21 | 表面実装型led基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7714346B2 (ja) |
JP (1) | JP2007088155A (ja) |
CN (1) | CN1937269B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311506A (ja) * | 2007-06-15 | 2008-12-25 | Harvatek Corp | 高い効率の発光効果を有する発光ダイオードチップの封止方法およびその封止構造 |
JP2018010949A (ja) * | 2016-07-13 | 2018-01-18 | ローム株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI302043B (en) * | 2006-06-27 | 2008-10-11 | Everlight Electronics Co Ltd | Base structure for ultra-thin light-emitting diode and manufacturing method thereof |
JP2008288285A (ja) * | 2007-05-15 | 2008-11-27 | Sharp Corp | 積層基板の切断方法、半導体装置の製造方法、半導体装置、発光装置及びバックライト装置 |
US20120091572A1 (en) * | 2009-06-22 | 2012-04-19 | Mitsubishi Electric Corporation | Semiconductor package and implementation structure of semiconductor package |
CN102024893B (zh) * | 2010-05-29 | 2012-03-07 | 比亚迪股份有限公司 | 衬底、垂直结构led芯片及制备方法 |
WO2014075002A1 (en) * | 2012-11-12 | 2014-05-15 | A Zykin | Led spirit connector system and manufacturing method |
US10128426B1 (en) | 2013-11-11 | 2018-11-13 | Andrey Zykin | LS core LED connector system and manufacturing method |
US10043783B1 (en) * | 2013-11-11 | 2018-08-07 | Andrey Zykin | LED spirit system and manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132396A (ja) * | 1992-10-19 | 1994-05-13 | Rohm Co Ltd | ダイシング方法 |
JP2002223001A (ja) * | 2001-01-26 | 2002-08-09 | Nichia Chem Ind Ltd | 光電装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3553405B2 (ja) * | 1999-03-03 | 2004-08-11 | ローム株式会社 | チップ型電子部品 |
JP4926337B2 (ja) * | 2000-06-28 | 2012-05-09 | アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド | 光源 |
JP2002222997A (ja) | 2001-01-25 | 2002-08-09 | Seiwa Electric Mfg Co Ltd | 表面実装型発光ダイオード、及びその製造方法 |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
JP4516320B2 (ja) * | 2004-01-08 | 2010-08-04 | シチズン電子株式会社 | Led基板 |
WO2006030671A1 (ja) * | 2004-09-16 | 2006-03-23 | Hitachi Aic Inc. | Led用反射板およびled装置 |
-
2005
- 2005-09-21 JP JP2005274075A patent/JP2007088155A/ja active Pending
-
2006
- 2006-08-08 US US11/463,116 patent/US7714346B2/en not_active Expired - Fee Related
- 2006-09-21 CN CN200610138935.1A patent/CN1937269B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132396A (ja) * | 1992-10-19 | 1994-05-13 | Rohm Co Ltd | ダイシング方法 |
JP2002223001A (ja) * | 2001-01-26 | 2002-08-09 | Nichia Chem Ind Ltd | 光電装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311506A (ja) * | 2007-06-15 | 2008-12-25 | Harvatek Corp | 高い効率の発光効果を有する発光ダイオードチップの封止方法およびその封止構造 |
JP2018010949A (ja) * | 2016-07-13 | 2018-01-18 | ローム株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
JP7029223B2 (ja) | 2016-07-13 | 2022-03-03 | ローム株式会社 | 半導体発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1937269A (zh) | 2007-03-28 |
CN1937269B (zh) | 2010-05-26 |
US7714346B2 (en) | 2010-05-11 |
US20070063204A1 (en) | 2007-03-22 |
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