JP2007036133A - 表面実装型半導体装置 - Google Patents
表面実装型半導体装置 Download PDFInfo
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- 239000011347 resin Substances 0.000 claims abstract description 75
- 229920005989 resin Polymers 0.000 claims abstract description 75
- 238000007789 sealing Methods 0.000 claims abstract description 50
- 229910000679 solder Inorganic materials 0.000 claims description 105
- 239000004020 conductor Substances 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 9
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- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
【解決手段】第一のリードフレーム2aの一方の端部側に凹部を形成して該凹部の内底面にLEDチップを載置し、第二のリードフレーム2bの一方の端部側に一方の端部をLEDチップの電極に接続したボンディングワイヤの他方の端部を接続し、LEDチップ及びボンディングワイヤを封止樹脂3で封止した。第一のリードフレーム2a及び第二のリードフレーム2bの夫々を封止樹脂3から外部に突出させて封止樹脂3の底面9側に回り込ませると共に、封止樹脂3の底面9の中央部に溝11を形成して凹部の外周面12及び外底面13の夫々の少なくとも一部を封止樹脂3から溝11内に露出させた。
【選択図】 図2
Description
前記半導体素子を載置する外底面が金属からなる凹部と、
前記半導体素子の電極に一方の端部が接続されたボンディングワイヤの他方の端部が接続された少なくとも1つの配線導体と、
前記半導体素子及びボンディングワイヤを覆うように封止する封止樹脂と、
前記封止樹脂と一体あるいは別体に形成され、前記配線導体を支持し前記凹部を囲む成形体と、
前記成形体の底面に形成された所定の幅および深さの溝と、
を有する表面実装型半導体装置であって、
前記凹部の外底面が前記成形体から露出し、かつ、前記凹部の外周面の少なくとも一部が前記成形体から前記溝内に露出していることを特徴とするものである。
前記半導体素子を載置する凹部の形成された第一のリードフレームと、
前記半導体素子の電極に一方の端部が接続されたボンディングワイヤの他方の端部が接続された前記半導体素子が載置されたリードフレームと分離・独立した少なくとも1つの第二のリードフレームと、
前記半導体素子およびボンディングワイヤを覆うように封止する封止樹脂と、
前記封止樹脂と一体あるいは別体に形成され、前記第一のリードフレームおよび前記第二のリードフレームの一部を支持する成形体と、
を有する表面実装型半導体装置であって、
前記半導体素子の前記成形体の底面には、所定の幅および深さの溝が形成され、前記凹部の外底面および外周面の夫々の面の少なくとも一部が前記成形体から前記溝内に露出していることを特徴とするものである。
2a、2b リードフレーム
3 封止樹脂
4 ボンディングワイヤ
5 内周面
6 凹部
7 内底面
8 側面
9 底面
10 レンズ
11 溝
12 外周面
13 外底面
14a、14b、14c 最下面
15 回路基板
16a、16b 導体パターン
17a、17b 外側面
18 はんだフィレット
19 側面
20 反射性樹脂
21 細幅部
22 貫通孔
23 反射部
24 配線導体
25 金属板
26 第一の成形体
27 第二の成形体
28 金属メッキ
Claims (4)
- 少なくとも1個の半導体素子と、
前記半導体素子を載置する外底面が金属からなる凹部と、
前記半導体素子の電極に一方の端部が接続されたボンディングワイヤの他方の端部が接続された少なくとも1つの配線導体と、
前記半導体素子及びボンディングワイヤを覆うように封止する封止樹脂と、
前記封止樹脂と一体あるいは別体に形成され、前記配線導体を支持し前記凹部を囲む成形体と、
前記成形体の底面に形成された所定の幅および深さの溝と、
を有する表面実装型半導体装置であって、
前記凹部の外底面が前記成形体から露出し、かつ、前記凹部の外周面の少なくとも一部が前記成形体から前記溝内に露出していることを特徴とする表面実装型半導体装置。 - 少なくとも1個の半導体素子と、
前記半導体素子を載置する凹部の形成された第一のリードフレームと、
前記半導体素子の電極に一方の端部が接続されたボンディングワイヤの他方の端部が接続された前記半導体素子が載置されたリードフレームと分離・独立した少なくとも1つの第二のリードフレームと、
前記半導体素子およびボンディングワイヤを覆うように封止する封止樹脂と、
前記封止樹脂と一体あるいは別体に形成され、前記第一のリードフレームおよび前記第二のリードフレームの一部を支持する成形体と、
を有する表面実装型半導体装置であって、
前記半導体素子の前記成形体の底面には、所定の幅および深さの溝が形成され、前記凹部の外底面および外周面の夫々の面の少なくとも一部が前記成形体から前記溝内に露出していることを特徴とする表面実装型半導体装置。 - 前記第一のリードフレーム、および、前記成形体側面から突出する前記第二のリードフレームの夫々の最下面は、略同一平面上にあると共に、前記凹部の外底面に対して略同一平面上あるいは実装時のはんだ印刷厚み未満の距離をおいた下方に位置することを特徴とする請求項2に記載の表面実装型半導体装置。
- 前記半導体素子は、LEDチップであり、前記成形体は透光性樹脂と反射性樹脂とで構成され、前記LEDチップおよびボンディングワイヤを覆う成形体が透光性樹脂、前記凹部の外周面を覆う成形体が反射性樹脂であることを特徴とする請求項1〜3の何れか1項に記載の表面実装型半導体装置。
Priority Applications (2)
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JP2005221154A JP4739851B2 (ja) | 2005-07-29 | 2005-07-29 | 表面実装型半導体装置 |
US11/425,578 US7499288B2 (en) | 2005-07-29 | 2006-06-21 | Surface mounting semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
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JP2005221154A JP4739851B2 (ja) | 2005-07-29 | 2005-07-29 | 表面実装型半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007036133A true JP2007036133A (ja) | 2007-02-08 |
JP4739851B2 JP4739851B2 (ja) | 2011-08-03 |
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JP2005221154A Expired - Fee Related JP4739851B2 (ja) | 2005-07-29 | 2005-07-29 | 表面実装型半導体装置 |
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US (1) | US7499288B2 (ja) |
JP (1) | JP4739851B2 (ja) |
Cited By (10)
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JP2008251938A (ja) * | 2007-03-30 | 2008-10-16 | Rohm Co Ltd | 半導体発光装置 |
JP2009021472A (ja) * | 2007-07-13 | 2009-01-29 | Rohm Co Ltd | 半導体発光装置 |
JP2009141006A (ja) * | 2007-12-04 | 2009-06-25 | Toshiba Corp | 発光モジュール及びその製造方法 |
JP2009278012A (ja) * | 2008-05-16 | 2009-11-26 | Meio Kasei:Kk | Led装置用パッケージ |
WO2010140693A1 (ja) * | 2009-06-04 | 2010-12-09 | 三洋電機株式会社 | 電子部品 |
JP2011003811A (ja) * | 2009-06-22 | 2011-01-06 | Toyoda Gosei Co Ltd | Ledパッケージ |
JP2012510153A (ja) * | 2008-11-25 | 2012-04-26 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2012238830A (ja) * | 2011-05-09 | 2012-12-06 | Lumirich Co Ltd | 発光ダイオード素子 |
JP2015216153A (ja) * | 2014-05-08 | 2015-12-03 | 日亜化学工業株式会社 | 発光装置 |
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CN114335298A (zh) * | 2021-11-27 | 2022-04-12 | 江西晶众腾光电科技有限公司 | 一种6050led封装支架及led灯珠 |
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JP4739851B2 (ja) | 2011-08-03 |
US20070081313A1 (en) | 2007-04-12 |
US7499288B2 (en) | 2009-03-03 |
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