JP2012256746A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2012256746A JP2012256746A JP2011129261A JP2011129261A JP2012256746A JP 2012256746 A JP2012256746 A JP 2012256746A JP 2011129261 A JP2011129261 A JP 2011129261A JP 2011129261 A JP2011129261 A JP 2011129261A JP 2012256746 A JP2012256746 A JP 2012256746A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- semiconductor device
- transfer mold
- main surface
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000011347 resin Substances 0.000 claims abstract description 103
- 229920005989 resin Polymers 0.000 claims abstract description 103
- 238000012546 transfer Methods 0.000 claims abstract description 89
- 239000010949 copper Substances 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000004519 grease Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910000962 AlSiC Inorganic materials 0.000 description 9
- 230000008602 contraction Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910016525 CuMo Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000032798 delamination Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】半導体装置100は、半導体チップ等を搭載した絶縁基板に接合された一方主面を有するベース板120と、ベース板120の一方主面と絶縁基板と半導体チップ等を覆うように且つベース板120の他方主面は露出するように設けられたトランスファーモールド樹脂140とを含む。ベース板120の線膨張係数は銅のそれよりも低く、トランスファーモールド樹脂140の線膨張係数は16ppm/℃以下である。トランスファーモールド樹脂140は、ベース板120の相対する短辺中央部付近がそれぞれ露出するようにえぐられた形状142を有している。ベース板120は、トランスファーモールド樹脂140のえぐられた形状142によって露出している各部分に、取り付け穴122を有している。
【選択図】図1
Description
従来からケース型と呼ばれる半導体装置が知られている。このケース型では、Cuベース板とケースで形成される箱体の中に半導体チップ(例えば、IGBT(Insulated Gate Bipolar Transistor)とダイオードのペア)等が収容されている。より具体的には、この種の半導体装置は絶縁基板(両面に金属層が形成された絶縁性板状部材(窒化アルミニウム、窒化ケイ素、アルミナ等)で構成される)を有しており、当該絶縁基板の一方の面の金属層(配線パターンを成している)上に半導体チップおよび電極がはんだ付けされる。そして、絶縁基板は、他方の面の金属層によって、Cuベース板とはんだ付けされる。その後、半導体チップ等の電気的接続が、アルミニウムワイヤ等の接続配線によって行われる。そして、ベース板とケースが接着剤で接着され、Cuベース板とケースから成る箱体内に樹脂(例えば、シリコーンゲル、液状エポキシ樹脂)が注入され、これにより半導体チップ等が封止される。その後、ケース内部の上記電極に繋がる電極がケース外部に形成される。
半導体チップと接続配線との接合部の信頼性は、トランスファーモールド型の半導体装置によって改善可能である。この種の半導体装置では、上記ケース型で用いられる液状エポキシ樹脂等に比べて線膨張係数が低い樹脂を用い、トランスファーモールド樹脂封止法によって半導体チップ等を封止する。トランスファーモールド型によれば、半導体チップ等の部品に対して大きな接着力が得られる。
ところで、パワー半導体装置を実装する筐体に高熱伝導性グリスを塗布し、その上にパワー半導体装置を載せてネジ締めする場合がある。高熱伝導性グリスの熱伝導率は、グリスの中では比較的高いが、金属に比べると桁違いに低い。このため、高熱伝導性グリスが厚いと、パワー半導体装置の十分な放熱性が得られなくなる。
図1に実施の形態1に係る半導体装置100の構造を例示する上面図を示し、図1中の2−2線における断面図を図2に例示し、図1中の3−3線における断面図を図3に例示する。なお、以下では、図1を上面図と称するのに合わせて半導体装置100についての上下方向を規定するものとする。この場合、図2および図3の上下方向がそのまま半導体装置100についての上下方向に対応する。また、以下では、半導体装置100の上下方向を厚さ方向と表現する場合もある。
図10に実施の形態2に係る半導体装置200の回路構成図を例示し、図11および図12に半導体装置200の上面図および側面図を例示する。図10に例示するように、半導体装置200は3つの回路ユニット202を有しており、これらの回路ユニット202のそれぞれが実施の形態1に係る半導体装置100で構成されている。なお、各回路ユニット202を、実施の形態1で例示した他の半導体装置100B(図8および図9参照)で構成することも可能である。以下では半導体装置100,100Bを半導体ユニット100,100Bとそれぞれ称する場合もある。
図16および図17に実施の形態3に係る半導体装置100Cの構造を例示する断面図を示す。図16は図2に対応し、図17は図3に対応する。また、図16中の一点鎖線で囲んだ部分18の拡大図を図18に示す。図16〜図18に例示の半導体装置100Cは、実施の形態1で例示した半導体装置100(図2、図3等参照)においてベース板120をベース板120Cに変更した構造を有している。半導体装置100Cのその他の構造は基本的に上記半導体装置100と同様である。
実施の形態4ではトランスファーモールド樹脂140の厚さ、特に絶縁基板102上の厚さについて説明する。ここでは実施の形態3に係る半導体装置100Cを例に挙げるが、他の半導体装置100等についても以下の説明は当てはまる。
Claims (9)
- 少なくとも1つの半導体チップおよび少なくとも1つの電極が搭載された一方主面を有する絶縁基板と、
前記絶縁基板の他方主面に接合された一方主面を有するベース板と、
前記ベース板の前記一方主面と前記絶縁基板と前記少なくとも1つの半導体チップと前記少なくとも1つの電極の接合端部とを覆うように且つ前記ベース板の他方主面は露出するように設けられたトランスファーモールド樹脂と
を備え、
前記ベース板の線膨張係数は銅の線膨張係数よりも低く、前記トランスファーモールド樹脂の線膨張係数は16ppm/℃以下であり、
前記トランスファーモールド樹脂は、前記ベース板の相対する短辺中央部付近がそれぞれ露出するようにえぐられた形状を有し、
前記ベース板は、前記トランスファーモールド樹脂の前記えぐられた形状によって露出している各部分に当該ベース板を厚さ方向に貫通する取り付け穴を有していることを特徴とする、半導体装置。 - 複数の回路ユニットと、
前記複数の回路ユニットを収容する外部ケースと
を備え、
前記複数の回路ユニットのそれぞれが請求項1に記載の半導体装置で構成されていることにより、前記複数の回路ユニットのそれぞれに前記ベース板が設けられていることを特徴とする、半導体装置。 - 請求項1または請求項2に記載の半導体装置であって、
前記ベース板の前記一方主面は、
前記絶縁基板との接合範囲にあたる接合領域と、
前記接合領域よりも当該ベース板の前記他方主面の側に位置する周辺領域と
を有していることを特徴とする、半導体装置。 - 請求項1ないし請求項3のうちのいずれか1項に記載の半導体装置であって、
前記トランスファーモールド樹脂のうちで前記絶縁基板の前記一方主面上の部分の厚さが5mm以下であることを特徴とする、半導体装置。 - 請求項1ないし請求項4のうちのいずれか1項に記載の半導体装置であって、
前記トランスファーモールド樹脂のうちで前記絶縁基板の前記一方主面上の部分の厚さが3mm以上であることを特徴とする、半導体装置。 - 請求項1ないし請求項5のうちのいずれか1項に記載の半導体装置であって、
前記少なくとも1つの半導体チップには、ワイドギャップ半導体を基板として構成された半導体チップが含まれることを特徴とする、半導体装置。 - 請求項1ないし請求項6のうちのいずれか1項に記載の半導体装置であって、
前記少なくとも1つの電極には、前記絶縁基板の前記一方主面の上方に位置する前記トランスファーモールド樹脂の上面から突出している電極が含まれることを特徴とする、半導体装置。 - 請求項2ないし請求項7のうちのいずれか1項に記載の半導体装置であって、
前記複数の回路ユニットは異なる位相での出力が可能に構成されていることを特徴とする、半導体装置。 - 請求項2ないし請求項7のうちのいずれか1項に記載の半導体装置であって、
前記複数の回路ユニットは同じ位相での出力が可能に構成されていることを特徴とする、半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011129261A JP5602095B2 (ja) | 2011-06-09 | 2011-06-09 | 半導体装置 |
US13/405,890 US9029994B2 (en) | 2011-06-09 | 2012-02-27 | Semiconductor device |
CN201210081415.7A CN102820271B (zh) | 2011-06-09 | 2012-03-26 | 半导体装置 |
DE102012206596.2A DE102012206596B4 (de) | 2011-06-09 | 2012-04-20 | Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011129261A JP5602095B2 (ja) | 2011-06-09 | 2011-06-09 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012256746A true JP2012256746A (ja) | 2012-12-27 |
JP2012256746A5 JP2012256746A5 (ja) | 2013-06-20 |
JP5602095B2 JP5602095B2 (ja) | 2014-10-08 |
Family
ID=47292483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011129261A Active JP5602095B2 (ja) | 2011-06-09 | 2011-06-09 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9029994B2 (ja) |
JP (1) | JP5602095B2 (ja) |
CN (1) | CN102820271B (ja) |
DE (1) | DE102012206596B4 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015170785A (ja) * | 2014-03-10 | 2015-09-28 | 三菱電機株式会社 | 絶縁基板および電力用半導体装置 |
JP2016171269A (ja) * | 2015-03-16 | 2016-09-23 | 三菱電機株式会社 | 電力用半導体装置 |
JP2017135144A (ja) * | 2016-01-25 | 2017-08-03 | 三菱電機株式会社 | 半導体モジュール |
JP2018125353A (ja) * | 2017-01-30 | 2018-08-09 | トヨタ自動車株式会社 | 半導体装置 |
US10074598B2 (en) | 2016-05-26 | 2018-09-11 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
JP2019040971A (ja) * | 2017-08-24 | 2019-03-14 | 富士電機株式会社 | 半導体装置 |
JP2020115568A (ja) * | 2018-06-05 | 2020-07-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO2022219934A1 (ja) * | 2021-04-12 | 2022-10-20 | 富士電機株式会社 | 半導体装置 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6368646B2 (ja) | 2012-09-20 | 2018-08-01 | ローム株式会社 | パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型 |
DE112013007047B4 (de) | 2013-05-09 | 2023-02-23 | Mitsubishi Electric Corporation | Halbleitermodul |
DE102013216709B4 (de) * | 2013-08-22 | 2021-03-25 | Infineon Technologies Ag | Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen und verfahren zur herstellung einer halbleiteranordnung |
JP6160698B2 (ja) * | 2013-08-23 | 2017-07-12 | 富士電機株式会社 | 半導体装置 |
JP6154342B2 (ja) * | 2013-12-06 | 2017-06-28 | トヨタ自動車株式会社 | 半導体装置 |
JP6356550B2 (ja) * | 2014-09-10 | 2018-07-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN104201116B (zh) | 2014-09-12 | 2018-04-20 | 苏州晶方半导体科技股份有限公司 | 指纹识别芯片封装方法和封装结构 |
US9704812B1 (en) * | 2016-05-06 | 2017-07-11 | Atmel Corporation | Double-sided electronic package |
JP6816691B2 (ja) * | 2017-09-29 | 2021-01-20 | 三菱電機株式会社 | 半導体装置 |
JP6848802B2 (ja) * | 2017-10-11 | 2021-03-24 | 三菱電機株式会社 | 半導体装置 |
KR102496483B1 (ko) | 2017-11-23 | 2023-02-06 | 삼성전자주식회사 | 아발란치 광검출기 및 이를 포함하는 이미지 센서 |
JP7010143B2 (ja) * | 2018-05-24 | 2022-02-10 | 三菱電機株式会社 | 絶縁基板の検査方法、検査装置 |
JP2020031130A (ja) * | 2018-08-22 | 2020-02-27 | トヨタ自動車株式会社 | 半導体装置 |
JP7346178B2 (ja) * | 2019-09-05 | 2023-09-19 | 株式会社東芝 | 半導体装置 |
CN114762109A (zh) * | 2019-12-10 | 2022-07-15 | 三菱电机株式会社 | 半导体封装件 |
JP6999749B2 (ja) * | 2020-06-16 | 2022-02-04 | 三菱電機株式会社 | 電気機器配線部品 |
CN220856564U (zh) * | 2020-09-17 | 2024-04-26 | 日立能源有限公司 | 功率模块 |
DE212021000239U1 (de) | 2020-10-14 | 2022-06-07 | Rohm Co., Ltd. | Halbleitermodul |
CN117712049B (zh) | 2020-10-14 | 2024-06-07 | 罗姆股份有限公司 | 半导体模块 |
WO2022080122A1 (ja) | 2020-10-14 | 2022-04-21 | ローム株式会社 | 半導体モジュール |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332291A (ja) * | 2005-05-25 | 2006-12-07 | Keihin Corp | パワードライブユニット |
JP2008084978A (ja) * | 2006-09-26 | 2008-04-10 | Denso Corp | 電子制御装置 |
JP2009135406A (ja) * | 2007-11-02 | 2009-06-18 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置とそれに用いられるエッチング部材、樹脂封止型半導体装置の製造方法、および積層型樹脂封止型半導体装置 |
JP2010123914A (ja) * | 2008-10-20 | 2010-06-03 | Denso Corp | 電子制御装置 |
JP2010129868A (ja) * | 2008-11-28 | 2010-06-10 | Mitsubishi Electric Corp | 電力用半導体モジュール及びその製造方法 |
JP2010186931A (ja) * | 2009-02-13 | 2010-08-26 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2010199622A (ja) * | 2010-05-31 | 2010-09-09 | Hitachi Ltd | 半導体装置,それを用いた電力変換装置及び車載用電機システム |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0661748A1 (en) * | 1993-12-28 | 1995-07-05 | Hitachi, Ltd. | Semiconductor device |
US5559373A (en) * | 1994-12-21 | 1996-09-24 | Solid State Devices, Inc. | Hermetically sealed surface mount diode package |
JP3429921B2 (ja) | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
JP3522975B2 (ja) | 1996-06-11 | 2004-04-26 | 株式会社東芝 | 半導体装置 |
JP3491481B2 (ja) | 1996-08-20 | 2004-01-26 | 株式会社日立製作所 | 半導体装置とその製造方法 |
JPH11204693A (ja) | 1998-01-14 | 1999-07-30 | Fuji Electric Co Ltd | 半導体装置 |
TW401632B (en) | 1998-03-26 | 2000-08-11 | Fujitsu Ltd | Resin molded semiconductor device and method of manufacturing semiconductor package |
JP4218193B2 (ja) * | 2000-08-24 | 2009-02-04 | 三菱電機株式会社 | パワーモジュール |
JP4286465B2 (ja) * | 2001-02-09 | 2009-07-01 | 三菱電機株式会社 | 半導体装置とその製造方法 |
JP2002246515A (ja) * | 2001-02-20 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置 |
JP2003264265A (ja) * | 2002-03-08 | 2003-09-19 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP3864130B2 (ja) * | 2002-10-10 | 2006-12-27 | 三菱電機株式会社 | 電力用半導体装置 |
DE10316356B4 (de) | 2003-04-10 | 2012-07-26 | Semikron Elektronik Gmbh & Co. Kg | Modular aufgebautes Leistungshalbleitermodul |
US7149088B2 (en) * | 2004-06-18 | 2006-12-12 | International Rectifier Corporation | Half-bridge power module with insert molded heatsinks |
JP4515298B2 (ja) * | 2005-03-22 | 2010-07-28 | 富士フイルム株式会社 | レーザー装置の組立方法 |
EP1761114A3 (en) * | 2005-08-31 | 2009-09-16 | Kabushiki Kaisha Toyota Jidoshokki | Circuit board |
US7446411B2 (en) * | 2005-10-24 | 2008-11-04 | Freescale Semiconductor, Inc. | Semiconductor structure and method of assembly |
US7429790B2 (en) | 2005-10-24 | 2008-09-30 | Freescale Semiconductor, Inc. | Semiconductor structure and method of manufacture |
JP2007235004A (ja) | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | 半導体装置 |
DE102006045939B4 (de) * | 2006-09-28 | 2021-06-02 | Infineon Technologies Ag | Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität |
US7755185B2 (en) * | 2006-09-29 | 2010-07-13 | Infineon Technologies Ag | Arrangement for cooling a power semiconductor module |
JP4471967B2 (ja) * | 2006-12-28 | 2010-06-02 | 株式会社ルネサステクノロジ | 双方向スイッチモジュール |
JP5345017B2 (ja) | 2009-08-27 | 2013-11-20 | 三菱電機株式会社 | 電力用半導体装置とその製造方法 |
US8513806B2 (en) * | 2011-06-30 | 2013-08-20 | Rohm Co., Ltd. | Laminated high melting point soldering layer formed by TLP bonding and fabrication method for the same, and semiconductor device |
-
2011
- 2011-06-09 JP JP2011129261A patent/JP5602095B2/ja active Active
-
2012
- 2012-02-27 US US13/405,890 patent/US9029994B2/en active Active
- 2012-03-26 CN CN201210081415.7A patent/CN102820271B/zh active Active
- 2012-04-20 DE DE102012206596.2A patent/DE102012206596B4/de active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332291A (ja) * | 2005-05-25 | 2006-12-07 | Keihin Corp | パワードライブユニット |
JP2008084978A (ja) * | 2006-09-26 | 2008-04-10 | Denso Corp | 電子制御装置 |
JP2009135406A (ja) * | 2007-11-02 | 2009-06-18 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置とそれに用いられるエッチング部材、樹脂封止型半導体装置の製造方法、および積層型樹脂封止型半導体装置 |
JP2010123914A (ja) * | 2008-10-20 | 2010-06-03 | Denso Corp | 電子制御装置 |
JP2010129868A (ja) * | 2008-11-28 | 2010-06-10 | Mitsubishi Electric Corp | 電力用半導体モジュール及びその製造方法 |
JP2010186931A (ja) * | 2009-02-13 | 2010-08-26 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2010199622A (ja) * | 2010-05-31 | 2010-09-09 | Hitachi Ltd | 半導体装置,それを用いた電力変換装置及び車載用電機システム |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015170785A (ja) * | 2014-03-10 | 2015-09-28 | 三菱電機株式会社 | 絶縁基板および電力用半導体装置 |
JP2016171269A (ja) * | 2015-03-16 | 2016-09-23 | 三菱電機株式会社 | 電力用半導体装置 |
JP2017135144A (ja) * | 2016-01-25 | 2017-08-03 | 三菱電機株式会社 | 半導体モジュール |
US10074598B2 (en) | 2016-05-26 | 2018-09-11 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
JP2018125353A (ja) * | 2017-01-30 | 2018-08-09 | トヨタ自動車株式会社 | 半導体装置 |
JP2019040971A (ja) * | 2017-08-24 | 2019-03-14 | 富士電機株式会社 | 半導体装置 |
JP7031172B2 (ja) | 2017-08-24 | 2022-03-08 | 富士電機株式会社 | 半導体装置 |
JP2020115568A (ja) * | 2018-06-05 | 2020-07-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO2022219934A1 (ja) * | 2021-04-12 | 2022-10-20 | 富士電機株式会社 | 半導体装置 |
JP7509315B2 (ja) | 2021-04-12 | 2024-07-02 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102820271B (zh) | 2015-04-08 |
JP5602095B2 (ja) | 2014-10-08 |
DE102012206596B4 (de) | 2017-11-16 |
CN102820271A (zh) | 2012-12-12 |
DE102012206596A1 (de) | 2013-01-03 |
US9029994B2 (en) | 2015-05-12 |
US20120313252A1 (en) | 2012-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5602095B2 (ja) | 半導体装置 | |
US8058722B2 (en) | Power semiconductor module and method of manufacturing the same | |
US9721875B2 (en) | Power module and fabrication method for the same | |
CN108735692B (zh) | 半导体装置 | |
US9754855B2 (en) | Semiconductor module having an embedded metal heat dissipation plate | |
JP2007184315A (ja) | 樹脂封止型パワー半導体モジュール | |
JP6786416B2 (ja) | 半導体装置 | |
JP7040032B2 (ja) | 半導体装置 | |
US9437508B2 (en) | Method for manufacturing semiconductor device and semiconductor device | |
EP3026700B1 (en) | Power module and manufacturing method thereof | |
JP2007012831A (ja) | パワー半導体装置 | |
JP6160698B2 (ja) | 半導体装置 | |
US20130112993A1 (en) | Semiconductor device and wiring substrate | |
US20230187311A1 (en) | Semiconductor device and manufacturing method thereof | |
JP2012015222A (ja) | 半導体装置 | |
US20150130042A1 (en) | Semiconductor module with radiation fins | |
CN111373527B (zh) | 半导体装置 | |
JP4994123B2 (ja) | パワー半導体モジュール | |
WO2013118275A1 (ja) | 半導体装置 | |
JP2012209470A (ja) | 半導体装置、半導体装置モジュール及び半導体装置の製造方法 | |
JP2013026296A (ja) | パワーモジュール | |
JP5899680B2 (ja) | パワー半導体モジュール | |
JP2024072092A (ja) | 半導体モジュール及び半導体装置 | |
JP5970790B2 (ja) | 半導体モジュール | |
JP2016012710A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130502 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130502 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130917 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131111 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131126 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140722 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5602095 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |