JP2006313845A - 窒化物半導体素子およびその製法 - Google Patents
窒化物半導体素子およびその製法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 251
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 202
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 153
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 108
- 239000011787 zinc oxide Substances 0.000 claims abstract description 57
- 150000001875 compounds Chemical class 0.000 claims abstract description 41
- 239000000203 mixture Substances 0.000 claims description 24
- 238000001039 wet etching Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 15
- 239000012159 carrier gas Substances 0.000 claims description 12
- -1 zinc oxide compound Chemical class 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims description 2
- 239000011701 zinc Substances 0.000 abstract description 22
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 30
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- BKOOMYPCSUNDGP-UHFFFAOYSA-N trimethyl-ethylene Natural products CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】 基板1上に窒化物半導体層が積層されて窒化物半導体素子を形成する場合に、基板1がMgxZn1-xO(0<x≦0.5)からなっており、その基板1に接してInyGa1-yN(0≦y≦0.5)からなる第1の窒化物半導体層2が設けられ、その第1の窒化物半導体層2上に半導体素子を形成するように窒化物半導体層3〜7が積層されている。
【選択図】 図1
Description
2 第1の窒化物半導体層
3 n形層
4 活性層
5 p形層
6 半導体積層部
7 透光性導電層
8 p側電極
9 n側電極
Claims (15)
- 基板上に窒化物半導体層が積層されて形成される窒化物半導体素子であって、前記基板が酸化亜鉛系化合物からなり、該基板に接してInyGa1-yN(0<y≦0.5)からなる第1の窒化物半導体層が設けられ、該第1の窒化物半導体層上に半導体素子を形成するように窒化物半導体層が積層されてなる窒化物半導体素子。
- 前記第1の窒化物半導体層が、前記基板との間で面内の結晶格子定数が格子整合する(△a/a≦1%、ここで△aは前記基板と第1の窒化物半導体層とのa軸の格子定数差の絶対値、aは基板のa軸の格子定数)ように形成されてなる請求項1記載の窒化物半導体素子。
- 前記第1の窒化物半導体層が、Inを含む層とInを含まない層との多層構造で、各層の厚さが50nm以下の超格子構造に形成されてなる請求項1または2記載の窒化物半導体素子の製法。
- 前記第1の窒化物半導体層が、表面側に行くほどInの組成が連続的にまたは段階的に減少するように形成されてなる請求項1または2記載の窒化物半導体素子。
- 前記第1の窒化物半導体層上に、n形AlzGa1-zN(0≦z≦1)からなるn形層が設けられ、該n形層に直接n側電極が形成されてなる請求項1ないし4のいずれか1項記載の窒化物半導体素子。
- 前記基板および前記第1の窒化物半導体層がn形に形成され、該n形の第1の窒化物半導体層上に、n形AlzGa1-zN(0≦z≦1)からなるn形層が設けられ、前記基板の前記第1の窒化物半導体層が設けられる面と反対面に、n側電極が形成されてなる請求項1ないし4のいずれか1項記載の窒化物半導体素子。
- 前記n形層上に活性層およびp形層が発光層を形成するように積層され、該p形層と電気的に接続されるようにp側電極が形成され、半導体発光素子を形成する請求項5または6記載の窒化物半導体素子。
- (a)酸化亜鉛系化合物からなる基板の半導体層積層面を除いて露出する面に保護膜を形成し、(b)前記基板をMOCVD装置内に設置して、キャリアガスとして窒素ガスを用いて、InyGa1-yN(0<y≦0.5)からなる第1の窒化物半導体層を成長し、(c)引き続き所望の窒化物半導体層を成長して窒化物半導体素子を形成することを特徴とする窒化物半導体素子の製法。
- 前記第1の窒化物半導体層の成長をGaNの成長温度より低い600〜900℃の低温で成長する請求項8記載の窒化物半導体素子の製法。
- 前記第1の窒化物半導体層の成長を、Inの原料ガスの流量を制御することにより超格子構造またはInの組成が徐々にもしくは段階的に減少する勾配層に形成する請求項8または9記載の窒化物半導体素子の製法。
- 前記(c)工程の素子を形成した後に、前記基板の一部または全部をウェットエッチングにより除去する請求項8ないし10のいずれか1項記載の窒化物半導体素子の製法。
- 前記第1の窒化物半導体層上に成長する所望の窒化物半導体層を、発光層を形成するように少なくともn形層とp形層とを含み、前記第1の窒化物半導体層側にn形層、表面側にp形層となるように成長することにより形成し、前記ウェットエッチングにより露出するn形の層にn側電極を形成して半導体発光素子を形成する請求項11記載の窒化物半導体素子の製法。
- 前記ウェットエッチングにより露出するn形の層の表面に凹凸を形成し、その後に前記n側電極を形成する請求項12記載の窒化物半導体素子の製法。
- 前記第1の窒化物半導体層上に成長する所望の窒化物半導体層を、発光層を形成するように少なくともn形層とp形層とを含み、前記第1の窒化物半導体層側にn形層、表面側にp形層となるように成長することにより形成し、該表面側にp側電極を形成してからチップ化し、該p側電極側をサブマウントにダイボンディングした後に前記基板の一部または全部をウェットエッチングにより除去することにより、半導体発光素子を形成する請求項8ないし13のいずれか1項記載の窒化物半導体素子の製法。
- 前記サブマウントとして、金属または、AlN、SiCおよびダイヤモンドのいずれか1種もしくはこれらの表面をCuまたはAgで被覆したものを用いる請求項14記載の窒化物半導体素子の製法。
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EP06746073A EP1881537A1 (en) | 2005-05-09 | 2006-05-08 | Nitride semiconductor element and production method therefor |
TW095116263A TW200703716A (en) | 2005-05-09 | 2006-05-08 | Nitride semiconductor element and its fabrication process |
US11/920,092 US20090045393A1 (en) | 2005-05-09 | 2006-05-08 | Nitride semiconductor device and method for manufacturing the same |
PCT/JP2006/309242 WO2006121000A1 (ja) | 2005-05-09 | 2006-05-08 | 窒化物半導体素子およびその製法 |
CNA2006800159948A CN101171694A (zh) | 2005-05-09 | 2006-05-08 | 氮化物半导体元件及其制法 |
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Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3102647B2 (ja) * | 1990-12-10 | 2000-10-23 | 日本電信電話株式会社 | 半導体発光素子 |
JP3105981B2 (ja) * | 1992-01-28 | 2000-11-06 | シャープ株式会社 | 半導体発光素子 |
JPH0661527A (ja) * | 1992-08-07 | 1994-03-04 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子及びその作製方法 |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
JPH09116225A (ja) * | 1995-10-20 | 1997-05-02 | Hitachi Ltd | 半導体発光素子 |
JPH1027940A (ja) * | 1996-07-12 | 1998-01-27 | Matsushita Electric Ind Co Ltd | 半導体レーザー装置 |
JPH1051029A (ja) * | 1996-07-31 | 1998-02-20 | Sharp Corp | 半導体発光素子及びその製造方法 |
US6800876B2 (en) * | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
US6734530B2 (en) * | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
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JP2005203721A (ja) * | 2003-12-18 | 2005-07-28 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2005303250A (ja) * | 2004-03-18 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
JP2006237556A (ja) * | 2005-01-31 | 2006-09-07 | Kanagawa Acad Of Sci & Technol | GaN膜生成方法及び半導体素子並びにIII族窒化物の薄膜生成方法及びIII族窒化物の薄膜を有する半導体素子 |
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