WO2008056632A1 - Élément électroluminescent semi-conducteur gan - Google Patents

Élément électroluminescent semi-conducteur gan Download PDF

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Publication number
WO2008056632A1
WO2008056632A1 PCT/JP2007/071494 JP2007071494W WO2008056632A1 WO 2008056632 A1 WO2008056632 A1 WO 2008056632A1 JP 2007071494 W JP2007071494 W JP 2007071494W WO 2008056632 A1 WO2008056632 A1 WO 2008056632A1
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Prior art keywords
layer
gan
active layer
well
temperature
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PCT/JP2007/071494
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English (en)
Japanese (ja)
Inventor
Norikazu Ito
Toshio Nishida
Satoshi Nakagawa
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Rohm Co., Ltd.
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Priority claimed from JP2006301945A external-priority patent/JP2008118049A/ja
Priority claimed from JP2006301943A external-priority patent/JP2008118048A/ja
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008056632A1 publication Critical patent/WO2008056632A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Definitions

  • GaN-based semiconductor light emitting device GaN-based semiconductor light emitting device
  • the present invention relates to a GaN-based semiconductor light-emitting device including In in an active layer (light-emitting layer) having a quantum well structure.
  • semiconductor light emitting devices such as semiconductor lasers and LEDs.
  • semiconductor light emitting devices using In (indium) as an active layer (light emitting layer) are used.
  • InGaN is used for the active layer in blue light-emitting devices based on GaN-based semiconductors.
  • a hydride vapor phase growth method (HVP E) or a metal organic chemical vapor deposition method (MOCVD) is used.
  • HVP E hydride vapor phase growth method
  • MOCVD metal organic chemical vapor deposition method
  • an n-type contact layer, an n-type cladding layer, and the like are usually stacked on a growth substrate, and then an active layer that becomes a light emitting layer is grown, and then a p-type cladding. Layers and p-type layers such as p-type contact layers are stacked, and finally electrodes are formed.
  • GaN-based semiconductor light emitting device for example, AlGaN or GaN isotropic force S is used for the cladding layer, and GaN or the like is used for the contact layer.
  • an n-type GaN-based semiconductor layer is stacked on a growth substrate, and then the active layer is crystal-grown. Since the vapor pressure of In in this is high, the growth temperature of the active layer needs to be lowered to about 650-800 ° C.
  • Patent Document 1 JP 2004-55719 A
  • the force S and the In composition ratio increase as the In composition ratio of the well layer in the active layer exceeds 10%.
  • In When placed in a high temperature state, In sublimates and becomes fragile, resulting in an extremely low luminous efficiency. If the thermal damage continues, the In may separate and the wafer may turn black.
  • the In composition ratio of the well layer is large, the growth temperature of the p-type layer is high, so that the active layer is deteriorated and the light emission characteristic is remarkably deteriorated.
  • the In composition ratio of the active layer must be increased, but in order to increase the incorporation of In into the active layer, it is necessary to lower the growth temperature. Become. However, when the growth temperature is lowered and the active layer is fabricated at a certain temperature, the electrical characteristics deteriorate, such as an increase in forward voltage, an increase in leakage in the low current region (A or less), and an increase in reverse current. Problem occurs. Therefore, it was impossible to obtain a GaN-based semiconductor device with good electrical characteristics while increasing In incorporation.
  • Patent Document 1 describes the configuration of a GaN-based semiconductor device having excellent luminous efficiency, but relates to a light-emitting device having a wavelength of 380 nm or less, and the In composition of the active layer is very small. In this case, it is intended to improve the light emission efficiency by reducing fluctuations in the In composition.
  • the active layer of the active layer due to the heat generated during the epitaxy growth process
  • no means has been proposed to solve the above-mentioned problems that prevent deterioration and increase the incorporation of In while improving electrical characteristics.
  • the present invention was created to solve the above-described problems, and has an active layer having a quantum well structure including In, and heat due to the growth temperature of a semiconductor layer grown after the active layer.
  • the purpose of the present invention is to provide a GaN-based semiconductor light-emitting device that can suppress the damage of silicon and improve the light emission characteristics and electrical characteristics while increasing the incorporation of In. Means for solving the problem
  • the invention according to claim 1 is characterized in that an activity having a quantum well structure is provided.
  • the GaN-based semiconductor light-emitting element is characterized in that the growth temperature of the well layer and the growth temperature of the barrier layer are different.
  • the invention according to claim 3 is the GaN-based semiconductor light-emitting element according to claim 2, wherein the In composition of the well layer is greater than 10%.
  • the invention according to claim 4 is characterized in that the A1 composition of the well layer is 5% or less.
  • the invention according to claim 5 is the GaN-based semiconductor according to any one of claims 1 to 3, wherein the A1 composition of the well layer is 1% or less. It is a light emitting element.
  • At least the crystal growth surface of the active layer is formed of a nonpolar surface or a semipolar surface, and any one of claims 1 to 5 is provided.
  • the GaN-based semiconductor light-emitting device according to item.
  • a GaN-based semiconductor light-emitting device that emits light having a long wavelength of 450 nm or more, that is, an active layer in which the In composition ratio of the well layer exceeds 10% is particularly vulnerable to high-temperature heating, but in the present invention, at least Since AlInGaN added with A1 is used for the well layer, the heat resistance is improved, and it is possible to suppress the deterioration of the active layer due to heating in the process of forming the semiconductor layer grown after the active layer.
  • the growth temperature of the well layer and the growth temperature of the barrier layer are changed differently. While increasing In incorporation into the layer, it can be grown at the optimum temperature of the NOR layer, and a barrier layer with excellent crystal quality can be formed, preventing deterioration of electrical characteristics such as forward voltage That's the power S.
  • the growth surface is formed by a nonpolar surface or a semipolar surface from the n-type GaN-based semiconductor layer to the p-type GaN-based semiconductor layer, the GaN Ga polar surface or N (nitrogen) polar surface Compared to the case where the piezo electric field is formed, the influence of the electric field generated by the piezo electric field is reduced by the force S.
  • FIG. 1 is a diagram showing an example of a cross-sectional structure of a GaN-based semiconductor light-emitting element according to the present invention.
  • FIG. 2 is a diagram showing a multiple quantum well structure of an active layer in the GaN-based semiconductor light-emitting device of the present invention.
  • FIG. 3 is a diagram showing a method for forming an active layer by temperature modulation.
  • FIG. 4 is a diagram showing a gas flow pattern in crystal growth of an active layer.
  • FIG. 5 is a graph showing changes in blackening of the active layer with respect to the ratio of A1 added to the active layer and the heat treatment temperature.
  • FIG. 6 is a diagram showing the effect of heat treatment temperature on the active layer for each type of active layer.
  • FIG. 7 is a diagram showing a comparison of electrical characteristics between constant temperature growth and temperature modulation growth of the active layer.
  • FIG. 8 is a diagram showing a comparison of light emission characteristics between constant temperature growth and temperature modulation growth of the active layer.
  • FIG. 9 is a view showing an example of a cross-sectional structure of a GaN-based semiconductor light-emitting element according to the present invention.
  • FIG. 10 is a diagram showing an example of a cross-sectional structure of a GaN-based semiconductor light-emitting element according to the present invention. Explanation of symbols
  • FIG. 1 shows an example of a cross-sectional view of a GaN-based semiconductor light emitting device of the present invention.
  • an n-type GaN contact layer 2 On the sapphire substrate 1, an n-type GaN contact layer 2, an n-type AlInGaN / AlGaN superlattice layer 3, an active layer 4, a p-type AlGaN blocking layer 8, and a p-type GaN contact layer 5 are sequentially laminated. A part of the p-type GaN contact layer 5 is mesa-etched to form an n-electrode 7 on the surface where the n-type GaN contact layer 2 is exposed. A p-electrode 6 is formed on the p-type GaN contact layer 5.
  • the active layer 4 is an active layer having a quantum well structure, and the well layer (wenore layer) is sandwiched between barrier layers (barrier layers) having a larger band gap than the well layer. It has a structure.
  • the quantum well structure may be multiplexed as a single quantum well (MQW), that is, a multiple quantum well structure.
  • the emission wavelength can be changed from purple to red by changing the above Y1 in the range of 0 ⁇ Y1 ⁇ 1, but in particular, a GaN-based semiconductor having a long emission wavelength of 450 nm or more.
  • the In layer of the well layer It consists of an active layer with a composition ratio exceeding 10%.
  • FIG. 2 shows the structure of the active layer 4 in detail.
  • a barrier layer 4a is disposed on the side where the active layer 4 is in contact with the AlInGaN / AlGaN superlattice layer 3, and a well layer 4b is stacked thereon. How many periodic forces are alternately applied between the barrier layer 4a and the well layer 4b, After the lamination, the last barrier layer 4a is formed, and the p-type GaN contact layer 5 is laminated on the last barrier layer 4a.
  • Roh rear layer 4a is undoped or Si doping concentration 5 X 10 16 cm 5 X 10 18 cm_ 3, thickness 70; consists of 160 A of Al GaN .
  • Layer 4b is made of, for example, non-doped Al InGaN with a thickness of 30A, and a well layer and a barrier layer
  • GaN can also be used. As described above, by adding A1 to both the well layer and the NOR layer of the active layer 4, the active layer can be configured to be resistant to heat damage.
  • the NOR layer 4a may be formed of AlGaN or GaN as described above, it is desirable to set AlInGaN (Y2 ⁇ 0) in order to improve the light emission efficiency. In that case, the NOR layer 4a must have a higher band gap energy than the well layer 4b! Usually, the In composition ratio of the NOR layer 4a is well so that Y1> Y2. Smaller than layer 4b
  • the AlInGaN / AlGaN superlattice layer 3 relaxes the stress of AlInGaN and AlGaN having a large difference in lattice constant and facilitates the growth of AlInGaN in the active layer 4.
  • the Si doping concentration is: ⁇ 5 X 10 18 cm— 3 In 10A Al In GaN and similar Si dopant
  • a structure in which about 10 cycles of GaN with a thickness of 20A is alternately stacked is used.
  • silane (SiH) as a dopant gas is also supplied.
  • TMI trimethylindium
  • the TMA in FIG. 4 is not continuously supplied, and is intermittently (intermittently) synchronized with the on / off of the TMI supply. It is recommended that the flow be performed in the same manner.
  • FIG. 5 shows data showing an improvement in the heat resistance of the active layer when the well layer 4b and the barrier layer 4a are grown at the same temperature (for example, 730 ° C.) by the method of FIG. Fig. 5 shows the GaN-based semiconductor light-emitting device shown in Fig. 1.
  • the AlInGaN / AlGaN superlattice layer 3 on the sapphire substrate 1 the AlInGaN well layer and the AlGaN barrier layer are formed as the active layer 4 as described above.
  • annealing was performed, and it was inspected whether the surface of the active layer 4 was blackened by the annealing temperature (heat treatment temperature) and the composition ratio of A1!
  • the composition ratio of A1 is common to the AlInGaN well layer and the AlGaN barrier layer.
  • Fig. 5 shows a part of the experimental data.
  • the image data on the surface of the active layer 4 is plotted on the coordinates of the vertical axis A1 composition (Al / Ga supply ratio) and the horizontal axis heat treatment temperature (anneal temperature). Are arranged in order.
  • the active layer 4 is composed of alternately laminated undoped GaN as the NORA layer (barrier layer).
  • the In composition ratio of the AlInGaN well layer is about 20%, and the heat treatment at each temperature is performed in a nitrogen atmosphere. The heat treatment time was 30 minutes.
  • the active layer 4 is a conventional InGaN / GaN active layer
  • the AlInGaN / AlGaN superlattice layer 3 is an InGaN / GaN superlattice layer.
  • the heat treatment was performed under the same conditions.
  • the In composition ratio of the InGaN well layer was set to about 20% as described above.
  • the broken line in FIG. 5 shows the boundary line where the blackening of the wafer starts.
  • the wafer is blackened at 950 ° C.
  • the A1 composition when the A1 composition is 0.5%, blackening has begun by heat treatment at 1000 ° C. Further, when the A1 composition is increased and the A1 composition is 1.0%, the heat treatment temperature of 1050 ° C is not reached, and blackening does not occur, and no problem occurs in the active layer even at 1000 ° C.
  • A1 composition is increased to 2.0%, A1 composition is 1.0% The situation does not change and the heat resistance is not improved!
  • FIG. 6 shows the results of PL (photoluminescence) measurement.
  • the vertical axis represents the PL strength (arbitrary unit), and the horizontal axis represents the heat treatment temperature.
  • Heat treatment (30 minutes) was performed in a nitrogen atmosphere at different annealing temperatures, and then the emission spectrum (PL intensity distribution) was measured at room temperature, and the integrated value of the PL intensity distribution at each temperature was determined.
  • Curve A1 shows an MQW structure in which the active layer is an AlInGaN well layer / AlGaN barrier layer, and the composition ratio of A1 is 0.25%.
  • Curve A2 shows the case of MQW structure with InGaN well layer / GaN barrier layer using the active layer of conventional structure.
  • Curve A3 shows an MQW structure in which the active layer is an AlInGa N well layer / GaN barrier layer and the Al composition ratio is 1%.
  • Curve A4 shows an MQW structure with an active layer of AlInGaN well layer / AlGaN NORA layer and a composition ratio of A1 of 1%.
  • the intensity of 1% A1 added only to the well layer is 1000 ° C, and the light emission intensity decreases and the heat resistance is almost the same as A1, but as the A1 composition ratio increases. The emission intensity is also reduced.
  • A4 with 1% of A1 added to both the well layer and the barrier layer is a force that can be improved by referring to Fig. 5 as well. Also decreases.
  • the conventional InGaN / GaN active layer turns black when a p-type layer is deposited at 900 ° C or higher, and LED emission cannot be obtained.
  • the active layer using AlInGaN even if a p-type GaN layer was deposited at 950 ° C, it was not damaged by heat and an LED with good characteristics was obtained.
  • the active layer 4 is produced by temperature modulation with different growth temperatures in the well layer 4b and the barrier layer 4a will be described below.
  • the gas flow pattern is the same as in Fig. 4.
  • the substrate temperature is lowered to the temperature T2
  • crystal growth is further performed for a certain time, and then the barrier layer 4a is also grown in the process of lowering to the temperature T2 in order to form the well layer 4b.
  • the crystal growth of the well layer 4b is performed at the temperature T2 for the time L in FIG. 4, the crystal growth of the next barrier layer 4a is performed again as described above.
  • Well layer 4b grows at a constant temperature T2.
  • Nor layer 4a has a process in which the temperature rises from T2 to T1, a period of constant temperature T1, and a process in which the temperature decreases from T1 to T2. Done. In this way, the NOR layer 4a and the well layer 4b are alternately formed.
  • T1 is set to 850 ° C to 950 ° C
  • T2 is set to 650 ° C to 800 ° C.
  • the heating time from T2 to T1 and the cooling time from T1 to T2 were both within 5 minutes.
  • the growth rate of both the well layer 4b and the barrier layer 4a is about 15 A / min
  • the growth time of the well layer 4b (corresponding to the period L) is 0.86 minutes
  • the growth time of the barrier layer 4a is 7 minutes
  • TEG flow rate 74sccm is 0.86 minutes
  • FIG. 7 compares the forward voltage (Vf) -forward current (If) characteristics when the active layer 4 is grown by temperature modulation and when grown at a constant temperature.
  • Z1 shows the Vf-If characteristic curve when both the well layer 4b and the barrier layer 4a are grown at the same temperature, and Z2 has grown the well layer 4b and the barrier layer 4a by performing temperature modulation as shown in FIG. Shows the Vf—If characteristic curve.
  • the structure of the well layer 4b and the barrier layer 4a is as described above, and the emission wavelength Has emission in the green range of about 520 nm.
  • the direction driving voltage of the active layer (curve Z2) produced by temperature modulation is preferable because it is very low.
  • Vf (20 mA) was 4 V or more
  • Z2 temperature modulation
  • FIG. 8 shows a comparison of luminance-forward current (If) characteristics when the active layer 4 is grown by temperature modulation and when grown at a constant temperature.
  • Z3 shows the luminance If characteristic curve when both the well layer 4b and the barrier layer 4a are grown at the same temperature
  • Z4 shows the temperature when the well layer 4b and the barrier layer 4a are grown by performing temperature modulation as shown in Fig. 3.
  • the structures of the well layer 4b and the barrier layer 4a are the same as those described above, and emit light in the green region having an emission wavelength of about 52 Onm.
  • the direction of the active layer (curve Z4) produced by temperature modulation increases in luminance in all current regions, and the emission characteristics G are greatly improved.
  • the heat resistance can be improved only by adding A1 to the active layer, the characteristics of the GaN-based semiconductor light emitting device are insufficient.
  • A1 is not added and only temperature modulation is performed, no effect is obtained on the short wavelength side (short wave side from blue), and the well layer film is blackened on the long wavelength side (long wave side from blue). Therefore, it is impossible to manufacture a light emitting element. Only by adding A1 and temperature modulation can a light-emitting device with excellent light-emitting and electrical properties be produced.
  • the method of the present invention is effective in a long wavelength region such as a green region.
  • a phenomenon is observed in which the peak wavelength shifts to the short wavelength side as the injection current increases.
  • the growth surface force of the GaN-based semiconductor layer is aligned with the ⁇ -plane or c-plane, and there is no symmetry in the c-axis direction.
  • a GaN-based semiconductor light-emitting device when a GaN-based semiconductor light-emitting device is formed with a piezoelectric field not generated! / Zonpolar surface (nonpolar surface) as a growth surface, a light-emitting device having almost no wavelength shift can be produced.
  • a semipolar surface that can suppress the generation of piezoelectric fields as much as possible is the growth surface.
  • a GaN-based semiconductor light emitting device may be fabricated.
  • hexagonal crystal structures such as GaN-based semiconductors, sapphire substrates, and 6H-SiC substrates are also called wurtzite crystal structures, and the crystal planes and orientations are expressed by so-called Miller indices.
  • the c-plane is represented as (0001) and the a-plane is represented as (11 20).
  • the nonpolar plane corresponds to the c-plane or the plane orthogonal to the c-plane, and corresponds to the a-plane (11-20) and the m-plane (10-10) which is also the crystal column face.
  • the semipolar plane is any one of the (10-1 1) plane, the (10-13) plane, and the (1122) plane.
  • the growth surface of all the formed GaN-based semiconductor layers is , Nonpolar or semipolar surface.
  • the growth surface becomes the a-plane
  • the LED shown in Fig. 1 can be formed with the nonpolar surface as the growth surface.
  • this surface is inherited and the growth surface of the GaN-based semiconductor also becomes a semipolar surface.
  • growth is performed by a well-known MOCVD method or the like.
  • the substrate temperature is raised to about 1000 ° C., and a Si-doped n-type GaN contact layer 2 is laminated on the r-plane of the sapphire substrate 1 by about 1 to 5 m.
  • the substrate temperature is lowered to 700 ° C to 800 ° C to form a Si-doped AlInGaN / AlGaN superlattice layer 3 and an MQW structure active layer 4.
  • the substrate temperature is raised to about 950 ° C. to about 1000 ° C.
  • Part of 2 is removed by mesa etching such as reactive ion etching to expose the surface of n-type GaN contact layer 2.
  • mesa etching such as reactive ion etching to expose the surface of n-type GaN contact layer 2.
  • the n-type GaN contact layer 2 surface Electrode 7 is formed by vapor deposition, and p-electrode 6 is formed by vapor deposition on p-type GaN contact layer 5
  • a transparent ZnO electrode is laminated on the p-type GaN contact layer 5, and then the p-electrode 6 is formed. good.
  • a Ga-doped ZnO electrode is formed on the p-type GaN contact layer 5 by, for example, MBE (Molecular beam mark itaxy) or PLD (Puised Laser Deposition).
  • FIG. 9 shows an example of an LED in which a GaN-based semiconductor is grown using a conductive n-type 6H—SiC substrate 12 so that the p electrode and the n electrode face each other.
  • the bonding wire whose sapphire substrate 1 has a poor thermal conductivity of about 0.5 W / (cm'K) requires both the p-electrode side and the n-electrode side.
  • the heat conduction is 10 times that of the sapphire substrate (approx. 4.9 W / (cm'K)), and the heat dissipation is good. Since the n electrode side can be bonded directly to the metal wiring, the bonding wire on the p electrode side There is an advantage that it improves with one.
  • the growth surface of the GaN-based semiconductor By growing a GaN-based semiconductor on the m-plane of the n-type 6H-SiC substrate 12, the growth surface of the GaN-based semiconductor also becomes a nonpolar m-plane.
  • the (10-11) plane which is a semipolar plane, this plane is inherited and the growth surface of the GaN-based semiconductor also becomes the (10-11) plane.
  • the manufacturing method will be briefly explained.
  • the substrate temperature is raised to about 1000 ° C by MOCVD, and the n-type 6H—SiC substrate 12 has a Si-doped n-type GaN contact on the nonpolar or semipolar surface.
  • Layer 13 is laminated, and then the substrate temperature is lowered to 700 ° C. to 800 ° C. to form Si-doped Alln GaN / AlGaN superlattice layer 14 and MQW structure active layer 41.
  • the substrate temperature is raised to 950 ° C to about 1000 ° C to form an Mg-doped p-type AlGaN blocking layer 17 that functions as an electron blocking layer, and then an Mg-doped p-type GaN contact layer 15 is formed.
  • Laminate Next, the p electrode 16 and the n electrode 11 are formed by vapor deposition or sputtering.
  • Laminate 1 alternately.
  • FIG. 10 shows an example of an LD (laser diode) having a ridge structure.
  • n-type GaN substrate 21 n-type cladding layer 22, n-type GaN waveguide layer 23, n-type AlInGaN / AlGaN superlattice layer 24, MQW active layer 42, p-type AlGaN blocking layer 25, p-type GaN waveguide layer 26, p-type SLS cladding layer 27, p-type GaN contact layer 28, and then p-type GaN contact by mesa etching Layer 28 to p-type GaN waveguide layer 26 are partially removed to form a ridge structure, and an insulating layer 29 is formed so as to cover the exposed surface of the P-type GaN waveguide layer 26 from the side surface of the ridge portion.
  • the pad electrode 31 is provided on the contact electrode 30.
  • the surface of the n-type GaN substrate 21 is a nonpolar surface or a semipolar surface
  • barrier layer Al In Ga N (X2 + Y2 + Z2 1, 0 ⁇ X2 ⁇ 1, 0 ⁇ Y
  • the n-type cladding layer 22 is composed of an n-type AlGaN layer or a superlattice layer in which n-type AlGaN and n-type GaN layers are alternately stacked, and the p-type SLS cladding layer 27 is a layer having a strained superlattice structure. Yes, it has a structure in which P-type AlGaN and p-type GaN are alternately stacked.
  • the p-type AlGaN blocking layer 25 to the p-type GaN contact layer 28 stacked above the MQW active layer 42 are grown at a substrate temperature of 950 ° C. to about 1000 ° C.
  • TMGa triethyl gallium
  • TMG trimethyl gallium
  • NH ammonia
  • Reaction gas corresponding to the components of each semiconductor layer such as aluminum (TMA), trimethylindium (TMIn), silane (SiH) as dopant gas for n-type, p-type
  • a semiconductor layer having a desired composition and a desired thickness can be formed with a desired composition.

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Abstract

L'invention concerne un élément électroluminescent semi-conducteur GaN, qui a une couche active ayant une structure à puits quantique contenant In, qui supprime un endommagement thermique dû à une température croissante de la couche semi-conductrice développée après le développement de la couche active, qui prend davantage d'In et qui possède des caractéristiques améliorées d'émission de lumière et électriques. Sur un substrat de saphir (1), une couche de contact GaN de type n (2), une couche de super-réseau AlInGaN/AlGaN (3), une couche active (4), une couche à bloc AlGaN de type p (8) et une couche de contact GaN de type p (5) sont laminées, et une électrode n (7) et une électrode p (6) sont agencées. La couche active (4) a une structure à puits quantique dans laquelle une couche de puits satisfait les inégalités AlX1InY1GaZ1N(X1+Y1+Z1=1, 0<X1<1, 0<Y1<1), et une couche barrière satisfait les inégalités AlX2InY2GaZ2N(X2+Y2+Z2=1, 0≤X2<1, 0≤Y2<1, Y1>Y2). La couche de puits et la couche barrière sont formées par modulation de température.
PCT/JP2007/071494 2006-11-07 2007-11-05 Élément électroluminescent semi-conducteur gan WO2008056632A1 (fr)

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JP2006-301943 2006-11-07
JP2006301945A JP2008118049A (ja) 2006-11-07 2006-11-07 ＧａＮ系半導体発光素子
JP2006-301945 2006-11-07
JP2006301943A JP2008118048A (ja) 2006-11-07 2006-11-07 ＧａＮ系半導体発光素子

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN103647009A (zh) * 2013-12-11 2014-03-19 天津三安光电有限公司 氮化物发光二极管及其制备方法
CZ308024B6 (cs) * 2018-10-22 2019-10-30 Fyzikální Ústav Av Čr, V. V. I. Způsob výroby epitaxní struktury s InGaN kvantovými jamami

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Publication number Priority date Publication date Assignee Title
TWI396306B (zh) * 2009-09-25 2013-05-11 Univ Chang Gung Gallium nitride based light emitting diode structure and its making method
DE102012104671B4 (de) 2012-05-30 2020-03-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer aktiven Zone für einen optoelektronischen Halbleiterchip

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JPH08316528A (ja) * 1994-12-02 1996-11-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JPH1032348A (ja) * 1996-07-12 1998-02-03 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子の製造方法及びその装置
JP2005136421A (ja) * 2003-10-28 2005-05-26 Sharp Corp 半導体デバイスの製造
JP2006128661A (ja) * 2004-09-29 2006-05-18 Matsushita Electric Ind Co Ltd 窒化物系半導体レーザ
JP2007088269A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH08316528A (ja) * 1994-12-02 1996-11-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JPH1032348A (ja) * 1996-07-12 1998-02-03 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子の製造方法及びその装置
JP2005136421A (ja) * 2003-10-28 2005-05-26 Sharp Corp 半導体デバイスの製造
JP2006128661A (ja) * 2004-09-29 2006-05-18 Matsushita Electric Ind Co Ltd 窒化物系半導体レーザ
JP2007088269A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103647009A (zh) * 2013-12-11 2014-03-19 天津三安光电有限公司 氮化物发光二极管及其制备方法
WO2015085803A1 (fr) * 2013-12-11 2015-06-18 厦门市三安光电科技有限公司 Diode électroluminescente à base de nitrure et son procédé de fabrication
CZ308024B6 (cs) * 2018-10-22 2019-10-30 Fyzikální Ústav Av Čr, V. V. I. Způsob výroby epitaxní struktury s InGaN kvantovými jamami

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