JP2006173429A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2006173429A JP2006173429A JP2004365534A JP2004365534A JP2006173429A JP 2006173429 A JP2006173429 A JP 2006173429A JP 2004365534 A JP2004365534 A JP 2004365534A JP 2004365534 A JP2004365534 A JP 2004365534A JP 2006173429 A JP2006173429 A JP 2006173429A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 53
- 229920005591 polysilicon Polymers 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 26
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims description 29
- 239000007772 electrode material Substances 0.000 claims description 15
- 239000003870 refractory metal Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000010941 cobalt Substances 0.000 abstract description 2
- 229910017052 cobalt Inorganic materials 0.000 abstract description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- -1 boron ion Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 P型シリコン基板101上にシリコン窒化膜103を形成し、シリコン窒化膜103に所定のパターンの開口を形成し、シリコン窒化膜108をマスクとして用いて半導体基板101にゲートトレンチ104を形成した後、ゲートトレンチ104の内部および開口内にポリシリコン膜106を埋め込むことにより、ゲート電極を自己整合的に形成する。さらに、シリコン窒化膜103の全面にコバルトなどの高融点金属107をスパッタ法により堆積させた後、アニール処理を行い、さらに余剰金属を除去することにより、ポリシリコン膜106の表面にこれらの金属のシリサイド108を形成する。
【選択図】 図7
Description
102 素子分離領域
103 シリコン窒化膜
103a シリコン窒化膜の開口
104 ゲートトレンチ
105 ゲート酸化膜
105e ゲート酸化膜の端部
106 ポリシリコン膜
106X ポリシリコン膜による凹部
107 金属
108 シリサイド層
109 ゲート電極
110 N型拡散層
111 層間絶縁膜
112 コンタクトプラグ
113 ビット線
114 セルキャパシタ
115 Al配線
201 P型シリコン基板
202 素子分離領域
203 保護絶縁膜
204 溝(ゲートトレンチ)
205 ゲート酸化膜
206 ポリシリコン膜
207 シリサイド膜
209 ゲート電極
210 N型拡散層
211 フォトレジスト
212 スリット領域
213 オフセット領域
Claims (7)
- 半導体基板上に保護絶縁膜を形成する第1の工程と、
前記保護絶縁膜に所定のパターンの開口を形成する第2の工程と、
前記保護絶縁膜をマスクとして用いて前記半導体基板にゲートトレンチを形成する第3の工程と、
前記ゲートトレンチの内部および前記開口内に電極材料を埋め込むことによりゲート電極を形成する第4の工程と、
前記保護絶縁膜を除去する第5の工程とを有する半導体装置の製造方法。 - 前記第4の工程は、
前記保護絶縁膜上及び前記ゲートトレンチの内部に前記電極材料を堆積させる電極材料成膜工程と、
前記保護絶縁膜上の前記電極材料の不要部分を除去する工程とを含む請求項1に記載の半導体装置の製造方法。 - 前記電極材料成膜工程は、
前記ゲートトレンチの内部をポリシリコン膜で完全に埋める工程と、
前記半導体基板上の全面に高融点金属膜を形成した後、熱処理することにより前記ポリシリコン膜の表面をシリサイド化する工程とを含む請求項2に記載の半導体装置の製造方法。 - 前記電極材料成膜工程は、
前記ゲートトレンチの内部に前記ポリシリコン膜による凹部を形成する工程と、
前記ポリシリコン膜による凹部内にシリサイド膜を形成する工程とを含む請求項2に記載の半導体装置の製造方法。 - 前記電極材料成膜工程は、
前記ゲートトレンチの内部に前記ポリシリコン膜による凹部を形成する工程と、
前記ポリシリコン膜による凹部内に高融点金属膜を形成する工程とを含む請求項2に記載の半導体装置の製造方法。 - 前記保護絶縁膜がシリコン窒化膜である請求項1乃至5のいずれか1項に記載の半導体装置の製造方法。
- 前記ゲート電極を酸化する第6の工程をさらに有する請求項1乃至6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004365534A JP2006173429A (ja) | 2004-12-17 | 2004-12-17 | 半導体装置の製造方法 |
US11/299,672 US20060134858A1 (en) | 2004-12-17 | 2005-12-13 | Method of manufacturing semiconductor device |
CNB2005101369847A CN100444354C (zh) | 2004-12-17 | 2005-12-13 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004365534A JP2006173429A (ja) | 2004-12-17 | 2004-12-17 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
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JP2006173429A true JP2006173429A (ja) | 2006-06-29 |
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JP2004365534A Pending JP2006173429A (ja) | 2004-12-17 | 2004-12-17 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060134858A1 (ja) |
JP (1) | JP2006173429A (ja) |
CN (1) | CN100444354C (ja) |
Cited By (7)
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KR100798774B1 (ko) | 2006-09-29 | 2008-01-29 | 주식회사 하이닉스반도체 | 반도체소자의 리세스게이트 제조 방법 |
JP2008028055A (ja) * | 2006-07-20 | 2008-02-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2008171863A (ja) * | 2007-01-09 | 2008-07-24 | Elpida Memory Inc | トレンチゲートの形成方法 |
KR100971422B1 (ko) * | 2008-04-01 | 2010-07-21 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
KR101161736B1 (ko) * | 2006-09-28 | 2012-07-02 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US8390064B2 (en) | 2008-12-11 | 2013-03-05 | Elpida Memory, Inc. | Semiconductor device having gate trenches and manufacturing method thereof |
JP2021090069A (ja) * | 2011-01-26 | 2021-06-10 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
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JP4715065B2 (ja) * | 2001-09-06 | 2011-07-06 | ソニー株式会社 | 半導体装置およびその製造方法 |
KR100400079B1 (ko) * | 2001-10-10 | 2003-09-29 | 한국전자통신연구원 | 트랜치 게이트 구조를 갖는 전력용 반도체 소자의 제조 방법 |
US6784488B2 (en) * | 2001-11-16 | 2004-08-31 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor devices and the manufacture thereof |
KR100433488B1 (ko) * | 2001-12-26 | 2004-05-31 | 동부전자 주식회사 | 트랜지스터 형성 방법 |
US20030168695A1 (en) * | 2002-03-07 | 2003-09-11 | International Rectifier Corp. | Silicide gate process for trench MOSFET |
JP3640945B2 (ja) * | 2002-09-02 | 2005-04-20 | 株式会社東芝 | トレンチゲート型半導体装置及びその製造方法 |
US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
KR100471001B1 (ko) * | 2003-07-02 | 2005-03-14 | 삼성전자주식회사 | 리세스형 트랜지스터 및 그의 제조방법 |
US6844591B1 (en) * | 2003-09-17 | 2005-01-18 | Micron Technology, Inc. | Method of forming DRAM access transistors |
-
2004
- 2004-12-17 JP JP2004365534A patent/JP2006173429A/ja active Pending
-
2005
- 2005-12-13 CN CNB2005101369847A patent/CN100444354C/zh not_active Expired - Fee Related
- 2005-12-13 US US11/299,672 patent/US20060134858A1/en not_active Abandoned
Cited By (12)
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JP2008028055A (ja) * | 2006-07-20 | 2008-02-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP4507119B2 (ja) * | 2006-07-20 | 2010-07-21 | エルピーダメモリ株式会社 | 半導体装置およびその製造方法 |
KR101161736B1 (ko) * | 2006-09-28 | 2012-07-02 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조방법 |
KR100798774B1 (ko) | 2006-09-29 | 2008-01-29 | 주식회사 하이닉스반도체 | 반도체소자의 리세스게이트 제조 방법 |
US7579265B2 (en) | 2006-09-29 | 2009-08-25 | Hynix Semiconductor Inc. | Method for manufacturing recess gate in a semiconductor device |
US7875540B2 (en) | 2006-09-29 | 2011-01-25 | Hynix Semiconductor Inc. | Method for manufacturing recess gate in a semiconductor device |
JP2008171863A (ja) * | 2007-01-09 | 2008-07-24 | Elpida Memory Inc | トレンチゲートの形成方法 |
KR100971422B1 (ko) * | 2008-04-01 | 2010-07-21 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
US7923775B2 (en) | 2008-04-01 | 2011-04-12 | Hynix Semiconductor Inc. | Semiconductor device and method for fabricating the same |
US8390064B2 (en) | 2008-12-11 | 2013-03-05 | Elpida Memory, Inc. | Semiconductor device having gate trenches and manufacturing method thereof |
JP2021090069A (ja) * | 2011-01-26 | 2021-06-10 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
JP7045501B2 (ja) | 2011-01-26 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100444354C (zh) | 2008-12-17 |
CN1812076A (zh) | 2006-08-02 |
US20060134858A1 (en) | 2006-06-22 |
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