JP2006114586A - 半導体装置の製造方法、当該方法に用いる接着シート及び当該方法より得られる半導体装置 - Google Patents
半導体装置の製造方法、当該方法に用いる接着シート及び当該方法より得られる半導体装置 Download PDFInfo
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- JP2006114586A JP2006114586A JP2004298470A JP2004298470A JP2006114586A JP 2006114586 A JP2006114586 A JP 2006114586A JP 2004298470 A JP2004298470 A JP 2004298470A JP 2004298470 A JP2004298470 A JP 2004298470A JP 2006114586 A JP2006114586 A JP 2006114586A
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Abstract
【解決手段】 半導体素子13を被着体11上に接着シート12を介して仮固着する仮固着工程と、前記半導体素子13にワイヤーボンディングをするワイヤーボンディング工程と、前記半導体素子13を封止樹脂15により封止する工程とを含み、前記接着シート12の175℃での損失弾性率が2000Pa以上であることを特徴とする。
【選択図】 図1
Description
本発明の実施の形態について、図を参照しながら以下に説明する。但し、説明に不要な部分は省略し、また説明を容易にする為に拡大または縮小等して図示した部分がある。
本発明に形態2に係る半導体装置の製造方法について、図2を参照しながら説明する。図2は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態の3に係る半導体装置の製造方法について、図3を参照しながら説明する。図3は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態4に係る半導体装置の製造方法について、図4を参照しながら説明する。図4は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態5に係る半導体装置の製造方法について、図5を参照しながら説明する。図5は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態6に係る半導体装置の製造方法について、図6及び図7を参照しながら説明する。図6は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。図7は、本実施の形態に係る半導体装置の製造方法により得られた半導体装置の概略を示す断面図である。
本実施の形態7に係る半導体装置の製造方法について、図8を参照しながら説明する。図8は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
前記基板等上に半導体素子を3次元実装する場合、半導体素子の回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、多官能イソシアネート系架橋剤3部、エポキシ樹脂(ジャパンエポキシレジン(株)製、エビコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックスXLC‐LL)6部、をメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物の溶液を調整した。
本実施例2に於いては,実施例1にて使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いた以外は、前記実施例1と同様にして、本実施例2に係る接着シート(厚さ25μm)を作製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、エポキシ樹脂(ジャパンエポキシレジン(株)製、エビコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックスXLC‐LL)6部をメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物の溶液を調整した。
比較例2に於いては,前記比較例1にて使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いた以外は、比較例1と同様にして、比較例2に係る接着シート(厚さ25μm)作製した。
前記実施例及び比較例に於いて作製した接着シートについて、損失弾性率を以下の通り測定した。
12、14、31、41 接着シート
13 半導体素子
15 封止樹脂
16 ボンディングワイヤー
21 スペーサ
32 半導体素子
33 ダイシングテープ
42、42’ コア材料(スペーサ)
Claims (14)
- 半導体素子を被着体上に接着シートを介して仮固着する仮固着工程と、
前記半導体素子にワイヤーボンディングをするワイヤーボンディング工程と、
前記半導体素子を封止樹脂により封止する工程とを含み、
前記接着シートとして175℃での損失弾性率が2000Pa以上のものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項1に記載の半導体装置の製造方法であって、
前記封止工程に於いて加熱により封止樹脂を硬化させると共に、前記接着シートを介して半導体素子と被着体とを固着させることを特徴とする半導体装置の製造方法。 - 前記請求項1に記載の半導体装置の製造方法であって、
前記封止樹脂の後硬化を行う後硬化工程を含み、
前記封止工程及び/又は後硬化工程に於いて、加熱により封止樹脂を硬化させると共に、前記接着シートを介して半導体素子と被着体とを固着させることを特徴とする半導体装置の製造方法。 - 前記請求項1〜3の何れか1項に記載の半導体装置の製造方法であって、
前記封止工程は、150℃〜200℃の範囲内で行われることを特徴とする半導体装置の製造方法。 - 前記請求項1〜4の何れか1項に記載の半導体装置の製造方法であって、
前記封止後の半導体素子と被着体との間の接着面積が90%以上であることを特徴とする半導体装置の製造方法。 - 前記請求項1〜5の何れか1項に記載の半導体装置の製造方法であって、
前記被着体は、基板、リードフレーム又は半導体素子であることを特徴とする半導体装置の製造方法。 - 前記請求項6に記載の半導体装置の製造方法であって、
前記被着体が半導体素子である場合に、半導体素子と半導体素子との間に、前記接着シートを介してスペーサを積層する工程を含むことを特徴とする半導体装置の製造方法。 - 前記請求項1〜7の何れか1項に記載の半導体装置の製造方法であって、
前記接着シートとして、熱可塑性樹脂を含むものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項1〜7の何れか1項に記載の半導体装置の製造方法であって、
前記接着シートとして、熱硬化性樹脂と熱可塑性樹脂の双方を含むものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項8又は9に記載の半導体装置の製造方法であって、
前記熱可塑性樹脂として、アクリル樹脂を使用することを特徴とする半導体装置の製造方法。 - 前記請求項9に記載の半導体装置の製造方法であって、
前記熱硬化性樹脂として、エポキシ樹脂及び/又はフェノール樹脂を使用することを特徴とする半導体装置の製造方法。 - 前記請求項8〜11の何れか1項に記載の半導体装置の製造方法であって、
前記接着シートとして、架橋剤が添加されているものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項1〜12の何れか1項に記載の半導体装置の製造方法に於いて使用される接着シート。
- 前記請求項1〜12の何れか1項に記載の半導体装置の製造方法により得られたものであることを特徴とする半導体装置。
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