JP4780653B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4780653B2 JP4780653B2 JP2006039139A JP2006039139A JP4780653B2 JP 4780653 B2 JP4780653 B2 JP 4780653B2 JP 2006039139 A JP2006039139 A JP 2006039139A JP 2006039139 A JP2006039139 A JP 2006039139A JP 4780653 B2 JP4780653 B2 JP 4780653B2
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Description
即ち、本発明によれば、80〜250℃の温度範囲で、又はその温度範囲内の任意の温度で硬化前の貯蔵弾性率が1MPa以上の接着シートを使用するので、接着シートの加熱工程を省略してワイヤーボンディング工程に移行しても、接着シートと被着体との接着面でずり変形が生じるのを防止し、該ワイヤーボンディング工程を良好に行える。また、加熱工程を省略できるので、接着シートから揮発ガスが発生することもない。この為、ボンディングパットが汚染されるのを防止することができる。よって本発明は、半導体装置の生産性を向上させると共に、歩留まりの向上を図ることができる。
本発明の実施の形態について、図1を参照しながら説明する。図1は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。但し、説明に不要な部分は省略し、また、説明を容易にする為に拡大又は縮小等して図示した部分がある。以上のことは、以下の図面に対しても同様である。
本発明に形態2に係る半導体装置の製造方法について、図2を参照しながら説明する。図2は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態の3に係る半導体装置の製造方法について、図3を参照しながら説明する。図3は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態4に係る半導体装置の製造方法について、図4を参照しながら説明する。図4は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態5に係る半導体装置の製造方法について、図5を参照しながら説明する。図5は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態6に係る半導体装置の製造方法について、図6及び図7を参照しながら説明する。図6は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。図7は、本実施の形態に係る半導体装置の製造方法により得られた半導体装置の概略を示す断面図である。
本実施の形態7に係る半導体装置の製造方法について、図8を参照しながら説明する。図8は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
以上の説明に於いては、本発明の最も好適な実施態様について説明した。しかし、本発明は当該実施態様に限定されるものではなく、本発明の特許請求の範囲に記載された技術的思想と実質的に同一の範囲で種々の変更が可能である。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、多官能イソシアネート系架橋剤3部、エポキシ樹脂(ジャパンエポキシレジン(株)製、エピコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックス ×LC−LL)6部をメチルエチルケトンに溶解させ、濃度20%の接着剤組成物の溶液を調製した。
本実施例2に於いては、実施例1で使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いた以外は、前記実施例1と同様にして、本実施例2に係る接着シート(厚さ25μm)を作製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、エポキシ樹脂(ジャパンエポキシレジン(株)製、エピコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックス XLC−LL)6部をメチルエチルケトンに溶解させ、濃度20%の接着剤組成物の溶液を調整した。
比較例2に於いては、前記比較例1にて使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いた以外は、比較例1と同様にして、比較例2に係る接着シート(厚さ25μm)を作製した。
前記実施例及び比較例に於いて作製した接着シートについて、硬化前の貯蔵弾性率を以下の通り測定した。
実施例及び比較例の接着シートを用い、半導体素子とリードフレーム、基板、半導体素子を用いた場合のワイヤーボンディング性を評価した。
12、31、41 接着シート
13 半導体素子
14、16ボンディングワイヤー
15 封止樹脂
21 スペーサ
32 半導体素子
33 ダイシングテープ
Claims (7)
- 半導体素子を被着体上に、硬化前の貯蔵弾性率が80〜250℃の温度範囲で1MPa以上の接着シートを介して仮固着する仮固着工程と、
加熱工程を経ることなく、接合温度80〜250℃の範囲でワイヤーボンディングをするワイヤーボンディング工程とを少なくとも有し、
前記半導体素子を封止樹脂により封止する封止工程をさらに有し、該封止工程に於いて、加熱により封止樹脂を硬化させると共に、前記接着シートを介して半導体素子と被着体とを固着させるか、又は
前記半導体素子を封止樹脂により封止する封止工程と、前記封止樹脂の後硬化を行う後硬化工程とをさらに有し、該後硬化工程に於いて、加熱により封止樹脂を硬化させると共に、前記接着シートを介して半導体素子と被着体とを固着させる
ことを特徴とする半導体装置の製造方法。 - 前記請求項1に記載の半導体装置の製造方法であって、
前記被着体は、基板、リードフレーム又は半導体素子であることを特徴とする半導体装置の製造方法。 - 前記請求項1又は2に記載の半導体装置の製造方法であって、
前記接着シートとして、熱可塑性樹脂を含むものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項1又は2に記載の半導体装置の製造方法であって、
前記接着シートとして、熱硬化性樹脂と熱可塑性樹脂の双方を含むものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項3又は4に記載の半導体装置の製造方法であって、
前記熱可塑性樹脂として、アクリル樹脂を使用することを特徴とする半導体装置の製造方法。 - 前記請求項4に記載の半導体装置の製造方法であって、
前記熱硬化性樹脂として、エポキシ樹脂及びフェノール樹脂のうちの少なくとも1種を使用することを特徴とする半導体装置の製造方法。 - 前記請求項3〜6の何れか1項に記載の半導体装置の製造方法であって、
前記接着シートとして、架橋剤が添加されているものを使用することを特徴とする半導体装置の製造方法。
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