JP5149121B2 - 半導体装置の製造方法に用いる接着シート及び当該方法より得られる半導体装置 - Google Patents
半導体装置の製造方法に用いる接着シート及び当該方法より得られる半導体装置 Download PDFInfo
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- JP5149121B2 JP5149121B2 JP2008270166A JP2008270166A JP5149121B2 JP 5149121 B2 JP5149121 B2 JP 5149121B2 JP 2008270166 A JP2008270166 A JP 2008270166A JP 2008270166 A JP2008270166 A JP 2008270166A JP 5149121 B2 JP5149121 B2 JP 5149121B2
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- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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Description
即ち、従来の製造方法の様に、半導体素子と被着体との貼り合わせ当初から接着シートを固着させると、半導体素子と被着体との間に空隙が生じた場合には、これを塞ぐことが困難になる。該空隙は、半導体素子の薄型化に伴い、凹状または凸状に反った状態になることに起因して生じるものである。よって本発明に於いては、半導体素子と被着体との貼り合わせは、接着シートを完全固着させずに仮固着の状態に留めておく。そして、半導体素子の封止工程に於いて固着させる。この封止工程に於いては、例えば150℃〜200℃の範囲内で樹脂封止が行われると、接着シートの流動性が除々に低くなり固着の状態に向かう。その過程で封止樹脂から接着シートに加わる圧力が、半導体素子の反りを低減し空隙を塞ぐ力として作用する。この結果、半導体素子が隙間無く被着体に接着固定して、高信頼性の半導体装置を製造することが可能となる。
本発明の実施の形態について、図を参照しながら以下に説明する。但し、説明に不要な部分は省略し、また説明を容易にする為に拡大または縮小等して図示した部分がある。
本発明に形態2に係る半導体装置の製造方法について、図2を参照しながら説明する。図2は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態の3に係る半導体装置の製造方法について、図3を参照しながら説明する。図3は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態4に係る半導体装置の製造方法について、図4を参照しながら説明する。図4は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態5に係る半導体装置の製造方法について、図5を参照しながら説明する。図5は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態6に係る半導体装置の製造方法について、図6及び図7を参照しながら説明する。図6は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。図7は、本実施の形態に係る半導体装置の製造方法により得られた半導体装置の概略を示す断面図である。
本実施の形態7に係る半導体装置の製造方法について、図8を参照しながら説明する。図8は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
前記基板等上に半導体素子を3次元実装する場合、半導体素子の回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、多官能イソシアネート系架橋剤3部、エポキシ樹脂(ジャパンエポキシレジン(株)製、エビコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックスXLC‐LL)6部、をメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物の溶液を調整した。
本実施例2に於いては、実施例1にて使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いた以外は、前記実施例1と同様にして、本実施例2に係る接着シート(厚さ25μm)を作製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、エポキシ樹脂(ジャパンエポキシレジン(株)製、エビコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックスXLC‐LL)6部をメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物の溶液を調整した。
比較例2に於いては、前記比較例1にて使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いた以外は、比較例1と同様にして、比較例2に係る接着シート(厚さ25μm)作製した。
前記実施例及び比較例に於いて作製した接着シートについて、損失弾性率を以下の通り測定した。
12、14、31、41 接着シート
13 半導体素子
15 封止樹脂
16 ボンディングワイヤー
21 スペーサ
32 半導体素子
33 ダイシングテープ
42、42’ コア材料(スペーサ)
Claims (10)
- 半導体素子を被着体上に固着するための接着シートであって、
前記半導体素子の前記被着体上への仮固着後、前記半導体素子を封止樹脂により150℃〜200℃の範囲内で封止する際に流動性が低下して完全に熱硬化した固着の状態に近づき、前記樹脂封止において加わる圧力により前記半導体素子と被着体との間の空隙を低減させるように完全に熱硬化する前の175℃での損失弾性率を2000Pa以上とした接着シート。 - 前記請求項1に記載の接着シートであって、
前記接着シートは熱可塑性樹脂を含むことを特徴とする接着シート。 - 前記請求項1に記載の接着シートであって、
前記接着シートは、熱硬化性樹脂と熱可塑性樹脂の双方を含むことを特徴とする接着シート。 - 前記請求項2又は3に記載の接着シートであって、
前記熱可塑性樹脂は、アクリル樹脂であることを特徴とする接着シート。 - 前記請求項3に記載の接着シートであって、
前記熱硬化性樹脂は、エポキシ樹脂又はフェノール樹脂の少なくとも何れかであることを特徴とする接着シート。 - 前記請求項1〜5の何れか1項に記載の接着シートであって、
前記接着シートは架橋剤が添加されたものであることを特徴とする接着シート。 - 完全に熱硬化する前の175℃での損失弾性率が2000Pa以上である接着シートを用意し、
半導体素子を被着体上に、完全に硬化させることなく前記接着シートを介して仮固着する仮固着工程と、
前記半導体素子にワイヤーボンディングをするワイヤーボンディング工程と、
150℃〜200℃の範囲内で封止樹脂を加熱することにより硬化させて前記半導体素子を封止する封止工程とを含むか、又は該封止工程後に、さらに前記封止樹脂の後硬化を行う後硬化工程を含み、
前記封止工程又は前記後硬化工程で、前記接着シートを完全に硬化させ、前記封止工程又は前記後硬化工程の際に当該接着シートの流動性を低下させて固着の状態に近づけ、前記樹脂封止において加わる圧力により前記半導体素子と被着体との間の空隙を低減させることにより、前記半導体素子と被着体との固着を行う製造方法により得られたものであることを特徴とする半導体装置。 - 前記請求項7に記載の半導体装置であって、
前記封止後の半導体素子と被着体との間の接着面積が90%以上であることを特徴とする半導体装置。 - 前記請求項7又は8に記載の半導体装置であって、
前記被着体は、基板、リードフレーム又は半導体素子であることを特徴とする半導体装置。 - 前記請求項7又は8に記載の半導体装置であって、
前記被着体が他の半導体素子であり、半導体素子と他の半導体素子との間に、前記接着シートを介してスペーサが積層されていることを特徴とする半導体装置。
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