JP2005537677A - 炭化ケイ素層上に形成される窒化酸化物層の処理方法 - Google Patents
炭化ケイ素層上に形成される窒化酸化物層の処理方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 34
- 238000000137 annealing Methods 0.000 claims abstract description 91
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims description 38
- 238000003672 processing method Methods 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 19
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 25
- 239000000758 substrate Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000005527 interface trap Effects 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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Abstract
Description
図1は、本発明に係る炭化ケイ素層上に形成される窒化酸化物層の処理方法の実施形態を説明するためのフローチャートを示す図である。
Claims (26)
- 炭化ケイ素層上に形成される窒化酸化物層の処理方法であって、
前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップを含むことを特徴とする処理方法。 - 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約900℃より高い温度で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約1000℃より高い温度で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約1100℃より高い温度で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約1200℃より高い温度で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約1気圧より低い圧力で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約0.01気圧から約1気圧までの圧力で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約0.2気圧の圧力で実施されることを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を設けるために、N2O及び/又はNOを含有した環境下で酸化物層を成長させるステップをさらに含むことを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を設けるために、N2O及び/又はNOを含有した環境下で酸化物層をアニールするステップをさらに含むことを特徴とする請求項1に記載の処理方法。
- N2O及び/又はNOを含有した環境下で酸化物層を成長させるステップと、
前記窒化酸化物層を設けるために、N2O及び/又はNOを含有した環境下で前記成長させた酸化物層をアニールするステップをさらに含むことを特徴とする請求項1に記載の処理方法。 - 前記実質的に無酸素の窒素を含有した環境は、NH3を含有した環境を含むことを特徴とする請求項1に記載の処理方法。
- 前記実質的に無酸素の窒素を含有した環境は、NH3と、少なくとも1つの不活性ガスを含むことを特徴とする請求項12に記載の処理方法。
- 前記NH3の流量は、約1から約10の標準リットル/分(SLM)であることを特徴とする請求項12に記載の処理方法。
- 前記NH3の流量は、約0.1cm/秒から約1000cm/秒までのガス流速を提供することを特徴とする請求項12に記載の処理方法。
- 前記NH3の流量は、約1cm/秒から約100cm/秒までのガス流速を提供することを特徴とする請求項12に記載の処理方法。
- 前記実質的に無酸素の窒素を含有した環境は、NH3と、N2、Arのうちの一方又は両方、及び/又はHeを含むことを特徴とする請求項12に記載の処理方法。
- 前記実質的に無酸素の窒素を含有した環境は、約1対3の比率でNH3とN2を含むことを特徴とする請求項12に記載の処理方法。
- 前記実質的に無酸素の窒素を含有した環境は、NH3とH2を含むことを特徴とする請求項12に記載の処理方法。
- 前記実質的に無酸素の窒素を含有した環境は、NH3とSiH4を含むことを特徴とする請求項12に記載の処理方法。
- 前記SiH4及びNH3は、前記SiH4及びNH3が、反応チャンバの前記窒化酸化物層の直前の領域に達するまで互いに交じり合わないように、前記窒化酸化物層を収容する前記反応チャンバ中に供給されることを特徴とする請求項20に記載の処理方法。
- 前記窒化酸化物層は、熱的に成長させた酸化物層を含むことを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層は、堆積させた酸化物層を含むことを特徴とする請求項1に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、実質的に無酸素の窒素を含有した環境下で、約1000℃より高い温度で、かつ1気圧より低い圧力で前記窒化酸化物層をアニールするステップを含むことを特徴とする請求項1に記載の処理方法。
- 前記実質的に無酸素の窒素を含有した環境は、NH3を含むことを特徴とする請求項24に記載の処理方法。
- 前記窒化酸化物層を、実質的に無酸素の窒素を含有した環境下でアニールするステップは、約1300℃の温度で実施されることを特徴とする請求項1に記載の処理方法。
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US40675302P | 2002-08-30 | 2002-08-30 | |
US10/640,934 US7022378B2 (en) | 2002-08-30 | 2003-08-14 | Nitrogen passivation of interface states in SiO2/SiC structures |
PCT/US2003/026605 WO2004025719A2 (en) | 2002-08-30 | 2003-08-25 | Nitrogen passivation of interface states in sio2/sic structures |
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KR (1) | KR20050035285A (ja) |
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AU (1) | AU2003272239A1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006156478A (ja) * | 2004-11-25 | 2006-06-15 | Mitsubishi Electric Corp | 炭化珪素半導体装置およびその製造方法 |
JP2011091186A (ja) * | 2009-10-22 | 2011-05-06 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
JP2011165941A (ja) * | 2010-02-10 | 2011-08-25 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2014527717A (ja) * | 2011-08-03 | 2014-10-16 | クリー インコーポレイテッドCree Inc. | セシウムイオンで酸化物界面を処理することによって高チャネル移動度を有するSiCMOSFETの形成 |
JP2016219832A (ja) * | 2009-03-11 | 2016-12-22 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6939756B1 (en) * | 2000-03-24 | 2005-09-06 | Vanderbilt University | Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects |
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Also Published As
Publication number | Publication date |
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AU2003272239A1 (en) | 2004-04-30 |
KR20050035285A (ko) | 2005-04-15 |
EP1532672B1 (en) | 2012-10-31 |
WO2004025719A2 (en) | 2004-03-25 |
CA2495530A1 (en) | 2004-03-25 |
CN100405558C (zh) | 2008-07-23 |
TWI312176B (en) | 2009-07-11 |
TW200411772A (en) | 2004-07-01 |
US20040101625A1 (en) | 2004-05-27 |
CN1679149A (zh) | 2005-10-05 |
WO2004025719A3 (en) | 2004-06-03 |
US7022378B2 (en) | 2006-04-04 |
AU2003272239A8 (en) | 2004-04-30 |
EP1532672A2 (en) | 2005-05-25 |
JP4558489B2 (ja) | 2010-10-06 |
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