JP2005527102A - 高電子移動度トランジスタ及びその製造方法 - Google Patents
高電子移動度トランジスタ及びその製造方法 Download PDFInfo
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- JP2005527102A JP2005527102A JP2003535260A JP2003535260A JP2005527102A JP 2005527102 A JP2005527102 A JP 2005527102A JP 2003535260 A JP2003535260 A JP 2003535260A JP 2003535260 A JP2003535260 A JP 2003535260A JP 2005527102 A JP2005527102 A JP 2005527102A
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Abstract
Description
Claims (38)
- 高比抵抗半導体層(20)と、
該高比抵抗半導体層(20)上に設けられ、該高比抵抗半導体層(20)よりも広いバンドギャップを有するバリア半導体層(18)と、
該バリア半導体層(18)と前記高比抵抗半導体層(20)間に設けられた二次元電子ガス層(22)と、
前記バリア半導体層(18)にそれぞれ接触しているとともに、該バリア半導体層(18)の表面部を被覆していないソース及びドレインコンタクト(13,14)と、
前記バリア半導体層(18)の被覆されていない表面上に設けられた絶縁層(24)と、
ゲート漏洩電流のバリアを形成して最大電流駆動を増加させるように、前記絶縁層(24)上に設けられたゲートコンタクト(16)と
を備えたことを特徴とする高電子移動度トランジスタ。 - 前記高比抵抗半導体層(20)及び前記バリア半導体層(18)が、III族窒化物の半導体材料からなることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記高比抵抗半導体層(20)及び前記バリア半導体層(18)が、AlGaN/GaN半導体材料からなることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、窒化ケイ素(SiN)、窒化アルミニウム(AlN)、二酸化ケイ素(SiO2)またはそれら多重層からなることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、窒化ケイ素からなることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、窒化ケイ素層と窒化アルミニウム層からなり、前記窒化アルミニウム層が、前記バリア半導体層と前記窒化ケイ素層間に挟まれていることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記コンタクト間の前記バリア半導体層(18)と前記絶縁層(24)の露出表面を被覆する誘電体層(32)を備えていることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、前記ゲートコンタクト(16)の下部だけにあり、該ゲートコンタクト(16)と前記バリア半導体層(18)間に挟まれていることを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、窒化ケイ素層及び窒化アルミニウム層からなることを特徴とする請求項8に記載の高電子移動度トランジスタ。
- 前記コンタクト(13,14,16)間の前記バリア半導体層(18)の露出表面及び前記ゲートコンタクト(16)の下端部と前記バリア半導体層(18)間の前記絶縁層(24)の露出表面を被覆する誘電体層(76)を備えていることを特徴とする請求項8に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、前記ソースコンタクト(13)とドレインコンタクト(14)間の前記バリア半導体層(18)の表面を被覆することを特徴とする請求項1に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、AlN層及びSiN層を含み、前記AlN層が前記バリア半導体層(18)と前記SiN層の間に挟まれていることを特徴とする請求項11に記載の高電子移動度トランジスタ。
- 前記コンタクト(13,14,16)間の前記絶縁層(24)の表面上に誘電体層(32)を備えていることを特徴とする請求項11に記載の高電子移動度トランジスタ。
- 高比抵抗を有し、非伝導性であるGaN半導体層(20)と、
該GaN半導体層(20)上に設けられ、該GaN半導体層(20)よりも広いバンドギャップを有するAlGaNバリア半導体層(18)と、
前記AlGaNバリア半導体層(18)と前記GaN半導体層(20)間に設けられた2次元電子ガス層(22)と、
前記AlGaNバリア半導体層(18)に接触するとともに、該AlGaNバリア半導体層(18)の表面を被覆していないソース及びドレインコンタクト(13,14)と、
前記AlGaNバリア半導体層(18)と電気的に接触するゲートコンタクト(16)と、
最大電流駆動も増加させるように、前記ゲートコンタクト(16)と前記AlGaNバリア半導体層(18)間のゲート漏洩のバリアを形成する手段と
を備えたことを特徴とする高電子移動度トランジスタ。 - 前記バリアを形成する手段が、前記ゲートコンタクト(16)を有し、前記AlGaNバリア半導体層(18)上に設けられた絶縁層(24)を備え、該絶縁層(24)がゲート漏洩電流のバリアを形成することを特徴とする請求項14に記載の高電子移動度トランジスタ。
- 前記絶縁層(24)が、窒化ケイ素(SiN)、窒化アルミニウム(AlN)、二酸化ケイ素(SiO2)またはそれら多重層からなることを特徴とする請求項15に記載の高電子移動度トランジスタ。
- 前記コンタクト(13,14,16)間の前記絶縁層(24)及び前記AlGaNバリア半導体層(18)上に誘電体層(32)を設けたことを特徴とする請求項15に記載の高電子移動度トランジスタ。
- 前記バリアを形成する手段が、前記ゲートコンタクト(16)を有し、前記AlGaNバリア半導体層(18)上に設けられた二重絶縁層(52,54)を備え、該二重絶縁層(52)の第1層が、前記AlGaNバリア半導体層(18)と前記二重絶縁層(52,54)の第2層(54)との間に設けられたスペーサーであり、前記二重絶縁層(52,54)の前記第2層(54)が堆積されるときに、前記AlGaNバリア半導体層(18)のドーピングまたは損傷を防止することを特徴とする請求項14に記載の高電子移動度トランジスタ。
- 前記二重絶縁層(52,54)が、AlN層(52)及びSiN層(54)を備え、前記AlN層(52)が、前記AlGaNバリア半導体層(18)と前記SiN層(54)間の前記スペーサーとして機能することを特徴とする請求項18に記載の高電子移動度トランジスタ。
- 前記コンタクト(13,14,16)間の前記二重絶縁層(52,54)及び前記AlGaNバリア半導体層(18)上に設けられた誘電体層(62)を備えたことを特徴とする請求項18に記載の高電子移動度トランジスタ。
- ゲート漏洩のバリアを備えた高電子移動度トランジスタの製造方法であって、
基板(88)を金属有機化学気相成長反応器(80)中に置く工程と、
前記基板(88)上に高比抵抗のGaN層(12)を形成するために、原料ガスを前記金属有機化学気相成長反応器(80)の反応チャンバー(82)中に流す工程と、
前記GaN層(12)上に、該GaN層(12)よりも広いバンドギャップを有するAlGaNバリア半導体層(18)を形成するために、原料ガスを前記反応チャンバー(82)中に流す工程と、
前記AlGaNバリア半導体層上に絶縁層(24)を形成するために原料ガスを前記反応チャンバー(82)中に流す工程と、
該反応チャンバー(82)を冷却する工程と、
堆積された層を有する前記基板(88)を前記反応チャンバー(82)から取り出す工程と
を有することを特徴とする高電子移動度トランジスタの製造方法。 - 前記絶縁層(24)及び前記AlGaNバリア半導体層(18)をソース及びドレインコンタクト(13,14)のためにエッチングする工程を有することを特徴とする請求項21に記載の高電子移動度トランジスタの製造方法。
- それぞれのエッチングされた領域に前記ソース及びドレインコンタクト(13,14)を堆積する工程を有することを特徴とする請求項22に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)上にゲートコンタクト(16)を堆積する工程を有することを特徴とする請求項21に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)が、窒化ケイ素(SiN)、窒化アルミニウム(AlN)、二酸化ケイ素(SiO2)またはそれら多重層からなることを特徴とする請求項21に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)が、窒化ケイ素からなることを特徴とする請求項21に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)が、窒化ケイ素層(54)と窒化アルミニウム層(52)を備え、前記窒化アルミニウム層(52)が、前記AlGaNバリア半導体層(18)と前記窒化ケイ素層(54)間に挟まれていることを特徴とする請求項21に記載の高電子移動度トランジスタの製造方法。
- ゲート漏洩のバリアを備えた高電子移動度トランジスタの製造方法であって、
基板(132)上に活性層を形成する工程と、
前記基板(132)をスパッタチャンバー(136)中に置く工程と、
前記スパッタチャンバー(136)の中で前記基板(132)上に絶縁層(24)をスパッタする工程と、
前記スパッタチャンバー(136)から前記基板(132)を取り出す工程と
を有することを特徴とする高電子移動度トランジスタの製造方法。 - 前記絶縁層(24)が、窒化ケイ素(SiN)、窒化アルミニウム(AlN)、二酸化ケイ素(SiO2)またはそれら多重層からなることを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)が、窒化ケイ素からなることを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)が、窒化ケイ素層(54)と窒化アルミニウム層(52)を備え、前記窒化アルミニウム層(52)が、前記AlGaNバリア半導体層(18)と前記窒化ケイ素層(54)の間に挟まれていることを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記活性層に接続しているソース及びドレインコンタクト(13,14)を形成する工程を有することを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)上にゲートコンタクト(16)を形成する工程を有することを特徴とする請求項32に記載の高電子移動度トランジスタの製造方法。
- 前記コンタクト(13,14,16)間の前記AlGaNバリア半導体層(18)と前記絶縁層(24)の表面上に誘電体層(32)を形成する工程を有することを特徴とする請求項33に記載の高電子移動度トランジスタの製造方法。
- 前記活性層が、金属有機化学気相成長法を使用して作られることを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記絶縁層(24)が窒化ケイ素であり、該絶縁層(24)が、前記スパッタチャンバー(136)を予め定めた圧力にポンプ減圧すること、ケイ素源(144)を原料ガスで衝撃してその表面を清浄化すること、チャンバー(136)の条件を、ケイ素(144)をスパッタするように変更すること、スパッタされたケイ素を窒素と反応させて、窒化ケイ素層(133)を堆積することによって、前記活性層上に堆積されることを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記活性層が、高比抵抗のGaN層(20)とAlGaNバリア層(18)を備え、前記GaN層(20)が、前記基板と前記AlGaNバリア半導体層(18)間に挟まれていることを特徴とする請求項28に記載の高電子移動度トランジスタの製造方法。
- 前記AlGaNバリア半導体層(18)が、前記GaN層(20)よりも広いバンドギャップを有することを特徴とする請求項37に記載の高電子移動度トランジスタの製造方法。
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Also Published As
Publication number | Publication date |
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US9419124B2 (en) | 2016-08-16 |
JP2010021582A (ja) | 2010-01-28 |
EP1410444B1 (en) | 2012-08-22 |
CA2454269A1 (en) | 2003-04-17 |
CA2454269C (en) | 2015-07-07 |
EP2267784A3 (en) | 2011-03-23 |
KR20040018502A (ko) | 2004-03-03 |
EP2267783A3 (en) | 2011-03-09 |
CN1557024B (zh) | 2010-04-07 |
WO2003032397A3 (en) | 2003-08-14 |
JP2010021581A (ja) | 2010-01-28 |
EP1410444A2 (en) | 2004-04-21 |
KR100920434B1 (ko) | 2009-10-08 |
US20030020092A1 (en) | 2003-01-30 |
EP2267783A2 (en) | 2010-12-29 |
US7230284B2 (en) | 2007-06-12 |
AU2002357640A1 (en) | 2003-04-22 |
US20070205433A1 (en) | 2007-09-06 |
US20060138456A1 (en) | 2006-06-29 |
CN1557024A (zh) | 2004-12-22 |
US10224427B2 (en) | 2019-03-05 |
EP2267784A2 (en) | 2010-12-29 |
TW552712B (en) | 2003-09-11 |
US20090315078A1 (en) | 2009-12-24 |
EP2267784B1 (en) | 2020-04-29 |
WO2003032397A2 (en) | 2003-04-17 |
EP2267783B1 (en) | 2017-06-21 |
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