JP2005510073A - 定向圧電膜 - Google Patents
定向圧電膜 Download PDFInfo
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- JP2005510073A JP2005510073A JP2003545481A JP2003545481A JP2005510073A JP 2005510073 A JP2005510073 A JP 2005510073A JP 2003545481 A JP2003545481 A JP 2003545481A JP 2003545481 A JP2003545481 A JP 2003545481A JP 2005510073 A JP2005510073 A JP 2005510073A
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- Prior art keywords
- seed crystal
- substrate
- piezoelectric film
- printing module
- precursor
- Prior art date
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- 239000013078 crystal Substances 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 43
- 239000002243 precursor Substances 0.000 claims description 26
- 238000007641 inkjet printing Methods 0.000 claims description 18
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 10
- 230000001939 inductive effect Effects 0.000 claims description 8
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 7
- 238000003618 dip coating Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229940046892 lead acetate Drugs 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- LSPWIBVVGBHFQW-UHFFFAOYSA-N magnesium lead(2+) oxygen(2-) Chemical compound [O--].[O--].[Mg++].[Pb++] LSPWIBVVGBHFQW-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14266—Sheet-like thin film type piezoelectric element
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Producing Shaped Articles From Materials (AREA)
Abstract
Description
10 基板
18 圧電膜
43 オリフィスプレート
44 金属バリア層
45 電極パターン層
Claims (30)
- 圧電膜を作成する方法において、
基板上に針状種結晶をおく工程、
前記基板上の前記針状種結晶の向きを定める工程、及び
前記種結晶から圧電膜を成長させる工程
を含むことを特徴とする方法。 - 前記基板上に前記種結晶をおく工程が前記基板上に前記種結晶をゾルから堆積させる工程を含むことを特徴とする請求項1に記載の方法。
- 前記基板上の前記種結晶の向きを定める工程が前記基板上に前記種結晶を含む前駆体の流れを誘起する工程を含むことを特徴とする請求項1に記載の方法。
- 前記基板上に前記前駆体の前記流れを誘起する工程が前記基板上に前記前駆体をスピンコーティングするかまたは浸漬コーティングする工程を含むことを特徴とする請求項3に記載の方法。
- 前記前駆体がゾルであることを特徴とする請求項3に記載の方法。
- 前記種結晶の向きを定める工程が前記基板上にゾルをスピンコーティングする工程を含むことを特徴とする請求項3に記載の方法。
- 前記針状種結晶が単結晶であることを特徴とする請求項1に記載の方法。
- 前記圧電膜を成長させる工程がゲルを形成する工程を含むことを特徴とする請求項1に記載の方法。
- 前記基板上に第2の針状種結晶をおく工程、前記基板上の前記第2の種結晶の向きを定める工程、及び前記第2の種結晶から前記圧電膜を成長させる工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記圧電膜が0.1から25μmの厚さを有することを特徴とする請求項1に記載の方法。
- 前記圧電膜に極性を付与する工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記圧電膜をアニールする工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記圧電膜がジルコン酸チタン酸鉛を含むことを特徴とする請求項1に記載の方法。
- 前記針状種結晶が平板状であることを特徴とする請求項1に記載の方法。
- インクジェット印刷モジュールにおいて、
基板、及び
前記基板上の圧電膜
を備え、前記圧電膜が、前記基板上の実質的に同じ方向に向きが定められた複数の針状種結晶を含むことを特徴とするインクジェット印刷モジュール。 - 前記複数の針状種結晶のそれぞれが前記基板の表面に実質的に平行な長さを有することを特徴とする請求項15に記載のインクジェット印刷モジュール。
- 前記種結晶が1.5:1より高いアスペクト比を有することを特徴とする請求項15に記載のインクジェット印刷モジュール。
- 前記アスペクト比が2:1より高いことを特徴とする請求項17に記載のインクジェット印刷モジュール。
- 前記アスペクト比が2.4:1より高いことを特徴とする請求項17に記載のインクジェット印刷モジュール。
- 前記圧電膜が0.1から25μmの範囲にある厚さを有することを特徴とする請求項15に記載のインクジェット印刷モジュール。
- 前記圧電膜が0.5から10μmの厚さを有することを特徴とする請求項15に記載のインクジェット印刷モジュール。
- 前記圧電膜が0.1から5μmの厚さを有することを特徴とする請求項15に記載のインクジェット印刷モジュール。
- 前記インクジェット印刷モジュールが、インク流路、前記圧電膜の作動のために配置された電気コンタクト及び作動中に前記流路内のインクにジェット噴射圧をかけるための位置に配された前記圧電膜を備えることを特徴とする請求項15に記載のインクジェット印刷モジュール。
- インクジェット印刷モジュールの作成方法において、
表面に近接させて、長さ、厚さ及び1.1:1より高いアスペクト比を有する種結晶を堆積させる工程、
前記長さが前記表面に実質的に平行であるように前記種結晶を配置する工程、及び
前記種結晶から圧電膜を成長させる工程
を含むことを特徴とする方法。 - 前記表面が基板の一部であることを特徴とする請求項24に記載の方法。
- 前記長さが前記表面に実質的に平行であるように前記種結晶を配置する工程が前記種結晶を含む前駆体の流れを前記表面上に誘起する工程を含むことを特徴とする請求項24に記載の方法。
- 前記前駆体の前記流れを誘起する工程が前記表面上に前記前駆体をスピンコーティングするかまたは浸漬コーティングする工程を含むことを特徴とする請求項26に記載の方法。
- 前記前駆体がゾルであることを特徴とする請求項27に記載の方法。
- 前記前駆体の前記流れを誘起する工程が前記ゾルをスピンコーティングする工程を含むことを特徴とする請求項28に記載の方法。
- 前記アスペクト比が2:1より高いことを特徴とする請求項24に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/987,702 US6620237B2 (en) | 2001-11-15 | 2001-11-15 | Oriented piezoelectric film |
PCT/US2002/036210 WO2003043824A2 (en) | 2001-11-15 | 2002-11-13 | Oriented piezoelectric film |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010113228A Division JP2010251766A (ja) | 2001-11-15 | 2010-05-17 | 定向圧電膜を備えたインクジェット印刷モジュール |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005510073A true JP2005510073A (ja) | 2005-04-14 |
JP2005510073A5 JP2005510073A5 (ja) | 2009-04-23 |
JP4544861B2 JP4544861B2 (ja) | 2010-09-15 |
Family
ID=25533490
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003545481A Expired - Lifetime JP4544861B2 (ja) | 2001-11-15 | 2002-11-13 | 定向圧電膜の作成方法 |
JP2010113228A Pending JP2010251766A (ja) | 2001-11-15 | 2010-05-17 | 定向圧電膜を備えたインクジェット印刷モジュール |
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JP2010113228A Pending JP2010251766A (ja) | 2001-11-15 | 2010-05-17 | 定向圧電膜を備えたインクジェット印刷モジュール |
Country Status (9)
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US (1) | US6620237B2 (ja) |
EP (1) | EP1444389B1 (ja) |
JP (2) | JP4544861B2 (ja) |
CN (1) | CN1292104C (ja) |
AT (1) | ATE339776T1 (ja) |
AU (1) | AU2002346368A1 (ja) |
DE (1) | DE60214751T2 (ja) |
HK (1) | HK1068508A1 (ja) |
WO (1) | WO2003043824A2 (ja) |
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US6515402B2 (en) * | 2001-01-24 | 2003-02-04 | Koninklijke Philips Electronics N.V. | Array of ultrasound transducers |
JP3902023B2 (ja) * | 2002-02-19 | 2007-04-04 | セイコーエプソン株式会社 | 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置 |
US7785659B2 (en) * | 2005-03-22 | 2010-08-31 | Fujifilm Corporation | Method of manufacturing an orientation film using aerosol deposition on a seed substrate |
US9974541B2 (en) * | 2014-02-14 | 2018-05-22 | Covidien Lp | End stop detection |
JP6967008B2 (ja) | 2016-03-16 | 2021-11-17 | ザール・テクノロジー・リミテッド | 圧電薄膜素子 |
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2001
- 2001-11-15 US US09/987,702 patent/US6620237B2/en not_active Expired - Lifetime
-
2002
- 2002-11-13 CN CN02826935.7A patent/CN1292104C/zh not_active Expired - Lifetime
- 2002-11-13 EP EP02784435A patent/EP1444389B1/en not_active Expired - Lifetime
- 2002-11-13 JP JP2003545481A patent/JP4544861B2/ja not_active Expired - Lifetime
- 2002-11-13 AT AT02784435T patent/ATE339776T1/de not_active IP Right Cessation
- 2002-11-13 AU AU2002346368A patent/AU2002346368A1/en not_active Abandoned
- 2002-11-13 WO PCT/US2002/036210 patent/WO2003043824A2/en active IP Right Grant
- 2002-11-13 DE DE60214751T patent/DE60214751T2/de not_active Expired - Lifetime
-
2005
- 2005-01-19 HK HK05100502A patent/HK1068508A1/xx not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
WO2003043824A2 (en) | 2003-05-30 |
ATE339776T1 (de) | 2006-10-15 |
EP1444389A4 (en) | 2005-06-01 |
JP4544861B2 (ja) | 2010-09-15 |
EP1444389A2 (en) | 2004-08-11 |
EP1444389B1 (en) | 2006-09-13 |
HK1068508A1 (en) | 2005-04-22 |
CN1292104C (zh) | 2006-12-27 |
DE60214751D1 (de) | 2006-10-26 |
US20030089303A1 (en) | 2003-05-15 |
US6620237B2 (en) | 2003-09-16 |
DE60214751T2 (de) | 2007-05-10 |
AU2002346368A1 (en) | 2003-06-10 |
CN1612954A (zh) | 2005-05-04 |
JP2010251766A (ja) | 2010-11-04 |
WO2003043824A3 (en) | 2003-11-13 |
AU2002346368A8 (en) | 2003-06-10 |
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