JP2005303079A - 実装基板 - Google Patents
実装基板 Download PDFInfo
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- JP2005303079A JP2005303079A JP2004118203A JP2004118203A JP2005303079A JP 2005303079 A JP2005303079 A JP 2005303079A JP 2004118203 A JP2004118203 A JP 2004118203A JP 2004118203 A JP2004118203 A JP 2004118203A JP 2005303079 A JP2005303079 A JP 2005303079A
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- Prior art keywords
- solder
- bonding material
- land
- meltable
- substrate
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 312
- 239000000463 material Substances 0.000 claims abstract description 167
- 239000000758 substrate Substances 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 40
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 40
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 40
- 230000008018 melting Effects 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 43
- 238000005476 soldering Methods 0.000 abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 239000011800 void material Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 19
- 238000005304 joining Methods 0.000 description 17
- 238000007639 printing Methods 0.000 description 11
- 238000007650 screen-printing Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910020816 Sn Pb Inorganic materials 0.000 description 4
- 229910020922 Sn-Pb Inorganic materials 0.000 description 4
- 229910008783 Sn—Pb Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/13075—Plural core members
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- H01L2224/8119—Arrangement of the bump connectors prior to mounting
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- H05K2201/03—Conductive materials
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Abstract
【解決手段】 電子部品25の28を実装基板20に形成された基板側ランド22にはんだペースト23を用いて接合するはんだ接合構造において、実装基板20に形成される基板側ランド22に、はんだペースト23内のはんだが加熱され溶融した状態において、この溶融はんだに流れを発生させる接合材流発生手段を設ける。この接合材流発生手段は、基板側ランド22上にはんだペースト23に埋設されるよう形成され、はんだに対する濡れ性が基板側ランド22より低い金属部材24により構成することができる。
【選択図】 図4
Description
請求項1記載の発明は、
電子部品の電極と溶融可能接合材によって接合されるランドを有する実装基板において、
溶融した前記溶融可能接合材に流れを発生させる接合材流発生手段を設けたことを特徴とするものである。
請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に前記溶融可能接合材に埋設されるよう形成され、前記溶融可能接合材に対する濡れ性が前記ランドより小さく、かつ、前記加熱前における前記溶融可能接合材の高さよりも低い高さを有する金属部材により構成したことを特徴とするものである。
請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に前記溶融可能接合材に埋設されるよう形成され、前記溶融可能接合材よりも低い溶融温度を有するロジンにより構成したことを特徴とするものである。
請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に膜形成され、前記溶融可能接合材に対する濡れ性が前記ランドより小さく、かつ、前記ランドの面積よりも小さい面積とされた金属膜により構成したことを特徴とするものである。
請求項1記載の実装基板において、
前記接合材流発生手段を、
配設される前記溶融可能接合材の所定形状と異なるよう形状設定がされたランドにより構成したことを特徴とするものである。
請求項1記載の実装基板において、
前記基板に、少なくとも前記ランドの形成位置を除きレジスト材を設け、
かつ、前記接合材流発生手段を、前記ランドから連続的に外側に向け延出形成されるよう該ソルダーレジストを切り欠くことにより形成された切り欠き部により構成したことを特徴とするものである。
請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に配設された前記溶融可能接合材に形成されており、該溶融可能接合材の直径寸法に対し10パーセント以上50パーセント未満の幅寸法を有するスリットにより構成したことを特徴とするものである。
一方、電子部品25は例えば半導体装置等であり、部品基板26の表面に形成された基板側ランド22にはんだボール28が形成された構成とされている(図4(D)参照)。また、実装基板20はプリント配線基板であり、その表面に基板側ランド22が形成されている。この実装基板20は、例えば図19に示すような携帯端末装置50の本体部51或は蓋体部52内に内設されている。
本実施例では、はんだペースト23を基板側ランド22に配設する際、はんだペースト23にスリット40を形成したことを特徴とするものである。このスリット40の幅寸法(図13(B)に矢印Wで示す)は、はんだペースト23の直径寸法(図13(B)に矢印Rで示す)に対し、10パーセント以上50パーセント未満の長さとなるよう設定されている。
このはんだが安定した状態となるように移動しようとする力(図18(A)に矢印Fで示す。以下、流れ力Fという)が発生する。この流れ力Fにより溶融はんだの流れが生じ、上記ようにこの流れは溶融はんだが安定した形状となるまで続く。図18(B)は、溶融はんだの形状が安定した状態、即ち流れ力Fが消滅した状態を示している。
(付記1)
電子部品の電極と溶融可能接合材によって接合されるランドを有する実装基板において、
溶融した前記溶融可能接合材に流れを発生させる接合材流発生手段を設けたことを特徴と実装基板。
(付記2)
付記1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に前記溶融可能接合材に埋設されるよう形成され、前記溶融可能接合材に対する濡れ性が前記ランドより小さく、かつ、前記加熱前における前記溶融可能接合材の高さよりも低い高さを有する金属部材により構成したことを特徴とする実装基板。
(付記3)
付記1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に前記溶融可能接合材に埋設されるよう形成され、前記溶融可能接合材よりも低い溶融温度を有するロジンにより構成したことを特徴とする実装基板。
(付記4)
付記1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に膜形成され、前記溶融可能接合材に対する濡れ性が前記ランドより小さく、かつ、前記ランドの面積よりも小さい面積とされた金属膜により構成したことを特徴とする実装基板。
(付記5)
付記1記載の実装基板において、
前記接合材流発生手段を、
配設される前記溶融可能接合材の所定形状と異なるよう形状設定がされたランドにより構成したことを特徴とする実装基板。
(付記6)
付記1記載の実装基板において、
前記基板に、少なくとも前記ランドの形成位置を除きレジスト材を設け、
かつ、前記接合材流発生手段を、前記ランドから連続的に外側に向け延出形成されるよう該ソルダーレジストを切り欠くことにより形成された切り欠き部により構成したことを特徴とする実装基板。
(付記7)
付記1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に配設された前記溶融可能接合材に形成されており、該溶融可能接合材の直径寸法に対し10パーセント以上50パーセント未満の幅寸法を有するスリットにより構成したことを特徴とする実装基板。
(付記8)
外部接続端子を有する電子部品を、溶融可能接合材によって実装基板のランドに接合する電子部品の実装方法において、
前記外部接続端子を覆うようロジンを配設し、
該ロジンに覆われたバンプを前記溶融可能接合材により前記ランドに接合することを特徴とする電子部品の実装方法。
(付記9)
電子部品を溶融可能接合材によって実装基板のランドに接合する電子部品の実装方法において、
前記溶融可能接合材を前記ランドに配設する際、該溶融可能接合材の配設位置の中心を前記ランドの中心位置からずらして配設することを特徴とする電子部品の実装方法。
(付記10)
付記9記載の電子部品の実装方法において、
前記溶融可能接合材の配設位置の中心と前記ランドの中心位置とのずれ量は、100μm以上250μm以下であることを特徴とする電子部品の実装方法。
(付記11)
外部接続端子を有する電子部品を、溶融可能接合材によって実装基板のランドに接合する電子部品の実装方法において、
前記溶融可能接合材を前記ランドに接合する際、予め前記溶融可能接合材の配設位置の中心と前記外部接続端子の中心位置とをずらした状態で接合処理を開始することを特徴とする電子部品の実装方法。
(付記12)
付記11記載の電子部品の実装方法において、
前記溶融可能接合材の配設位置の中心と前記外部接続端子の中心位置とのずれ量は、80μm以上200μm以下であることを特徴とする電子部品の実装方法。
22 基板側ランド
23 はんだペースト
24 金属部材
25 電子部品
26 部品基板
27 部品側ランド
28 はんだボール
29 接合はんだ
20A 溶融はんだ
30 ボイド
33 金属膜
34 ロジン
35 ロジン膜
37 変形部品側ランド
38 ソルダーレジスト
39 切り欠き部
40 スリット
Claims (7)
- 電子部品の電極と溶融可能接合材によって接合されるランドを有する実装基板において、
溶融した前記溶融可能接合材に流れを発生させる接合材流発生手段を設けたことを特徴とする実装基板。 - 請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に前記溶融可能接合材に埋設されるよう形成され、前記溶融可能接合材に対する濡れ性が前記ランドより小さく、かつ、前記加熱前における前記溶融可能接合材の高さよりも低い高さを有する金属部材により構成したことを特徴とする実装基板。 - 請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に前記溶融可能接合材に埋設されるよう形成され、前記溶融可能接合材よりも低い溶融温度を有するロジンにより構成したことを特徴とする実装基板。 - 請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に膜形成され、前記溶融可能接合材に対する濡れ性が前記ランドより小さく、かつ、前記ランドの面積よりも小さい面積とされた金属膜により構成したことを特徴とする実装基板。 - 請求項1記載の実装基板において、
前記接合材流発生手段を、
配設される前記溶融可能接合材の所定形状と異なるよう形状設定がされたランドにより構成したことを特徴とする実装基板。 - 請求項1記載の実装基板において、
前記基板に、少なくとも前記ランドの形成位置を除きレジスト材を設け、
かつ、前記接合材流発生手段を、前記ランドから連続的に外側に向け延出形成されるよう該ソルダーレジストを切り欠くことにより形成された切り欠き部により構成したことを特徴とする実装基板。 - 請求項1記載の実装基板において、
前記接合材流発生手段を、
前記ランド上に配設された前記溶融可能接合材に形成されており、該溶融可能接合材の直径寸法に対し10パーセント以上50パーセント未満の幅寸法を有するスリットにより構成したことを特徴とする実装基板。
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TW093127728A TWI280829B (en) | 2004-04-13 | 2004-09-14 | Mounting substrate and mounting method of electronic part |
CN2004100833276A CN1684573B (zh) | 2004-04-13 | 2004-09-29 | 安装基片 |
KR1020040077833A KR100645418B1 (ko) | 2004-04-13 | 2004-09-30 | 실장 기판 |
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US20050224560A1 (en) | 2005-10-13 |
KR100645418B1 (ko) | 2006-11-15 |
CN1684573B (zh) | 2010-04-28 |
KR20050100329A (ko) | 2005-10-18 |
JP4502690B2 (ja) | 2010-07-14 |
TWI280829B (en) | 2007-05-01 |
CN1684573A (zh) | 2005-10-19 |
TW200534766A (en) | 2005-10-16 |
US7491893B2 (en) | 2009-02-17 |
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