JP2005161840A - Ultra-thin copper foil with carrier and printed circuit - Google Patents

Ultra-thin copper foil with carrier and printed circuit Download PDF

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JP2005161840A
JP2005161840A JP2004279499A JP2004279499A JP2005161840A JP 2005161840 A JP2005161840 A JP 2005161840A JP 2004279499 A JP2004279499 A JP 2004279499A JP 2004279499 A JP2004279499 A JP 2004279499A JP 2005161840 A JP2005161840 A JP 2005161840A
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copper foil
carrier
foil
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ultrathin copper
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JP4087369B2 (en
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Akitoshi Suzuki
昭利 鈴木
Shin Fukuda
伸 福田
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Furukawa Circuit Foil Co Ltd
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Furukawa Circuit Foil Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an ultra-thin copper foil with a carrier, in which fine crystalline particles can be made to appear without influenced by roughness of a surface of a carrier foil, etching up to such a thin space as line/space of 15 μm or less can be conducted, and strong adhesiveness between the thin space line and space and a printed circuit can be kept even after etching of a line up to 15 μm. <P>SOLUTION: A peeling layer and an ultra-thin copper foil are laminated in this order on a carrier foil, in which the ultra-thin copper foil is constructed in such a way that a surface roughness of the foil before surface treatment for making rough is 2.5 μm or less as a 10 point average roughness Rz and that the minimum peak space distance of the mounted material is 5 μm or longer. The surface of the foil is subjected to treatment for making rough. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明はプリント配線板の製造時に用いるキャリア付き極薄銅箔に関し、特に高密度超微細配線のプリント配線板や多層プリント配線板の製造に用いて好適なキャリア付き極薄銅箔に関する。   The present invention relates to an ultrathin copper foil with a carrier used in the production of a printed wiring board, and more particularly to an ultrathin copper foil with a carrier suitable for use in the production of a printed wiring board having a high density and ultrafine wiring or a multilayer printed wiring board.

プリント配線板は、次のようにして製造されている。
まず、ガラス・エポキシ樹脂やポリイミド樹脂などからなる電気絶縁性の基板の表面に、表面回路形成用の薄い銅箔を置いたのち、加熱・加圧して銅張り積層板を製造する。
ついで、その銅張り積層板に、スルーホールの穿設,スルーホールめっきを順次行ったのち、該銅張り積層板の表面にある銅箔にエッチング処理を行って所望する線幅と所望する線間ピッチを備えた配線パターンを形成し、最後に、ソルダーレジストの形成やその他の仕上げ処理が行われる。
このとき用いる銅箔については、基材に熱圧着される側の表面を粗化面とし、この粗化面で該基材に対するアンカー効果を発揮させ、もって該基材と銅箔との接合強度を高めてプリント配線板としての信頼性を確保することがなされている。
The printed wiring board is manufactured as follows.
First, a thin copper foil for forming a surface circuit is placed on the surface of an electrically insulating substrate made of glass, epoxy resin, polyimide resin or the like, and then heated and pressed to produce a copper-clad laminate.
Next, through hole formation and through-hole plating are sequentially performed on the copper-clad laminate, and then the copper foil on the surface of the copper-clad laminate is etched to obtain a desired line width and desired line spacing. A wiring pattern having a pitch is formed, and finally, a solder resist is formed and other finishing processes are performed.
About the copper foil used at this time, the surface on the side to be thermocompression bonded to the base material is a roughened surface, and the anchoring effect for the base material is exhibited on the roughened surface, and thus the bonding strength between the base material and the copper foil. To ensure the reliability as a printed wiring board.

更に最近では、銅箔の粗化面を予めエポキシ樹脂のような接着用樹脂で被覆し、該接着用樹脂を半硬化状態(Bステージ)の絶縁樹脂層にした樹脂付き銅箔を表面回路形成用の銅箔として用い、その絶縁樹脂層の側を基材に熱圧着してプリント配線板、とりわけビルドアップ配線板を製造することが行われている。
また、各種電子部品の高集積化に対応して、こうしたビルドアップ配線板では、配線パターンも高密度化が要求され、微細な線幅や線間ピッチの配線からなる配線パターン、いわゆるファインパターンのプリント配線板が要求されるようになってきている。例えば、半導体パッケージに使用されるプリント配線板の場合は、線幅や線間ピッチがそれぞれ15μm前後という高密度極微細配線を有するプリント配線板が要求されている。
More recently, the surface of the copper foil with resin is formed by coating the roughened surface of the copper foil in advance with an adhesive resin such as an epoxy resin, and forming the insulating resin layer in a semi-cured state (B stage). A printed wiring board, particularly a build-up wiring board, is manufactured by thermocompression bonding the insulating resin layer side to a base material.
Also, in response to the high integration of various electronic components, such a build-up wiring board requires a high-density wiring pattern, which is a so-called fine pattern wiring pattern consisting of wiring with fine line widths and pitches between lines. A printed wiring board has been required. For example, in the case of a printed wiring board used for a semiconductor package, a printed wiring board having high-density ultrafine wiring with a line width and a line pitch of around 15 μm is required.

このようなプリント配線形成用の銅箔として、厚い銅箔を用いると、基材の表面までエッチングするために必要な時間が長くなり、その結果、形成される配線パターンにおける側壁の垂直性が崩れて、次式:
Ef=2H/(B−T)
(ここで、Hは銅箔の厚み、Bは形成された配線パターンのボトム幅、Tは形成された配線パターンのトップ幅である)で示されるエッチングファクタ(Ef)が小さくなる。
このような問題は、形成する配線パターンにおける配線の線幅が広い場合にはそれほど深刻な問題にならないが、線幅が狭い配線パターンの場合には断線に結びつくことも起こり得る。
When a thick copper foil is used as a copper foil for forming such a printed wiring, the time required for etching to the surface of the substrate becomes longer, and as a result, the verticality of the side wall in the formed wiring pattern is lost. And the following formula:
Ef = 2H / (BT)
Here, the etching factor (Ef) indicated by H is the thickness of the copper foil, B is the bottom width of the formed wiring pattern, and T is the top width of the formed wiring pattern.
Such a problem does not become a serious problem when the line width of the wiring in the wiring pattern to be formed is large. However, in the case of a wiring pattern with a narrow line width, it may be connected to the disconnection.

一方、薄い銅箔の場合は、確かにEf値を大きくすることができる。ところで、銅箔と基材との接合強度は、銅箔の基材側の表面を粗化面とし、この粗化面の突起部を基材に喰い込ませて接着強度を確保している。このため、喰い込んだ突起部を基材から完全に除去しないと、それが残銅となり、配線パターンの線間ピッチが狭い場合には絶縁不良を引き起こす原因となる。この喰い込んだ突起部を完全にエッチング除去するための時間は、銅箔が厚い場合は配線パターンにそれ程影響を与えないが、銅箔の厚さが薄い場合にはこのエッチング時間は大きく影響してくる。即ち、銅箔のエッチング時間に比較して食い込んだ突起部を除去するエッチング時間が長くなるため、該喰い込んだ突起部をエッチング除去する過程で、既に形成されている配線パターンの側壁のエッチングも進行してしまい、結果的にはEf値が小さくなる。   On the other hand, in the case of a thin copper foil, the Ef value can certainly be increased. By the way, the bonding strength between the copper foil and the base material is such that the surface of the copper foil on the base material side is a roughened surface, and the protrusions of the roughened surface are bitten into the base material to ensure the adhesive strength. For this reason, unless the engulfed protrusion is completely removed from the base material, it becomes a residual copper, which causes a poor insulation when the line pitch of the wiring pattern is narrow. The time required to completely remove the biting protrusions does not affect the wiring pattern when the copper foil is thick, but this etching time greatly affects when the copper foil is thin. Come. That is, since the etching time for removing the biting protrusions is longer than the etching time of the copper foil, the side walls of the already formed wiring pattern are also etched in the process of removing the biting protrusions. As a result, the Ef value becomes small.

薄い銅箔を用いる場合、その表面粗度を小さくすればこのような問題を解消できることは事実であるが、その場合には銅箔と基材との接合強度が小さくなるため信頼性に富むファインな配線パターンのプリント配線板を製造することは困難である。
また、薄い銅箔の場合は、その機械的強度が低いので、プリント配線板の製造時に皺や折れ目が発生しやすく、更には銅箔切れを起こすこともあり、取り扱いに細心の注意を払わなければならないという問題もある。
このように、Ef値が大きく、かつ基材との接合強度も高いファインな配線パターンが形成されているプリント配線板を製造することは、実際問題として、かなり困難である。特に、市販されている銅箔を用いて、線間や線幅が15μm前後の高密度極微細配線の配線パターンを形成することは事実上不可能であり、それを可能にする銅箔の開発が強く望まれているのが実状である。
When thin copper foil is used, it is true that this problem can be solved by reducing the surface roughness. However, in this case, the bonding strength between the copper foil and the base material is reduced, so a fine and reliable It is difficult to manufacture a printed wiring board having a simple wiring pattern.
In the case of thin copper foil, its mechanical strength is low, so wrinkles and creases are likely to occur during the production of printed wiring boards, and copper foil may be cut. Handle with great care. There is also the problem of having to.
Thus, as a practical matter, it is quite difficult to manufacture a printed wiring board on which a fine wiring pattern having a large Ef value and high bonding strength with a substrate is formed. In particular, it is practically impossible to form a wiring pattern of high-density ultrafine wiring with a line spacing or line width of around 15 μm using commercially available copper foil, and development of a copper foil that makes it possible The reality is that is strongly desired.

こうしたファインパターン用途に使われる銅箔としては、厚さ9μm以下、特に5μm以下の銅箔が適している。
このようなファインパターン用途に使われる極薄銅箔として、本願出願人は先に、キャリア付極薄銅箔であって、表面粗さ:Rzが1.5μm以下の銅箔をキャリアとし、その表面に剥離層と電解銅めっき層をこの順序で積層してなり、該電解銅めっき層の最外層表面が粗化面とされていることを特徴とする銅箔(特許文献1参照)、及び銅箔をキャリア箔とし、その表面に剥離層と電解銅めっき層をこの順序に積層してなるキャリア付き極薄銅箔であって、該キャリア銅箔と該電解銅めっき層との左右エッジ近傍部分がそれらの中央部に比較して強く結合せしめられていること、及び該電解銅めっきの最外層表面が粗面化とされていることを特徴とするキャリア付き銅箔(特許文献2参照)を開発した。また、マット面粗さRzを3.5μm以下と平滑化したキャリア箔を使用し、そのマット面上に剥離層と電解銅めっき層をこの順序で積層してなり、該電解銅めっき層の最外層表面が粗化面とされていることを特徴とする銅箔(特許文献3参照)の開発を行った。
As a copper foil used for such fine pattern applications, a copper foil having a thickness of 9 μm or less, particularly 5 μm or less is suitable.
As the ultra-thin copper foil used for such fine pattern applications, the applicant of the present application is an ultra-thin copper foil with a carrier, and the surface roughness: a copper foil with a Rz of 1.5 μm or less as a carrier, A copper foil (see Patent Document 1), characterized in that a release layer and an electrolytic copper plating layer are laminated on the surface in this order, and the outermost layer surface of the electrolytic copper plating layer is a roughened surface, and A copper foil is used as a carrier foil, and an ultrathin copper foil with a carrier formed by laminating a peeling layer and an electrolytic copper plating layer on the surface thereof in this order, and in the vicinity of the left and right edges of the carrier copper foil and the electrolytic copper plating layer Copper foil with carrier, characterized in that the portions are strongly bonded as compared to the central portion thereof, and the outermost layer surface of the electrolytic copper plating is roughened (see Patent Document 2) Developed. Further, a smoothed carrier foil having a mat surface roughness Rz of 3.5 μm or less is used, and a release layer and an electrolytic copper plating layer are laminated on the mat surface in this order. The development of a copper foil (see Patent Document 3) characterized in that the outer layer surface is a roughened surface.

これらのキャリア付き極薄銅箔を図2に示す。キャリア付き極薄銅箔は、キャリアとしての箔1(以下、「キャリア箔」と言う)の片面に、剥離層2と電解銅めっき層4がこの順序で形成され、該電解銅めっき層の表面に、銅の粗化粒子5を電析させて形成した粗化面4aとからなっている。
そして、該粗化面4aをガラス・エポキシ基材(図示せず)に重ね合わせたのち全体を熱圧着し、ついでキャリア箔1を剥離・除去して該電解銅めっき層の該キャリア箔との接合側を露出せしめ、そこに所定の配線パターンを形成する態様で使用される。
キャリア箔1は前記の薄い電解銅めっき層4を基板と接合するまでバックアップする補強材(キャリア)として機能する。更に、剥離層2は、前記の電解銅めっき層4と該キャリア銅箔を分離する際の剥離をよくするための層であり、該キャリア銅箔をきれいにかつ容易に剥がすことができるようになっている(該剥離層は該キャリア箔を剥離除去する際に該キャリア箔と一体的に除去される)。
These ultrathin copper foils with carriers are shown in FIG. In the ultrathin copper foil with a carrier, a release layer 2 and an electrolytic copper plating layer 4 are formed in this order on one side of a foil 1 as a carrier (hereinafter referred to as “carrier foil”), and the surface of the electrolytic copper plating layer And a roughened surface 4a formed by electrodepositing copper roughened particles 5.
Then, after the roughened surface 4a is superposed on a glass / epoxy substrate (not shown), the whole is thermocompression bonded, and then the carrier foil 1 is peeled off and removed to form the electrolytic copper plating layer with the carrier foil. The bonding side is exposed, and a predetermined wiring pattern is formed there.
The carrier foil 1 functions as a reinforcing material (carrier) that backs up the thin electrolytic copper plating layer 4 until it is bonded to the substrate. Furthermore, the peeling layer 2 is a layer for improving peeling when the electrolytic copper plating layer 4 and the carrier copper foil are separated, and the carrier copper foil can be peeled cleanly and easily. (The release layer is removed together with the carrier foil when the carrier foil is peeled off).

一方ガラス・エポキシ基材と張り合わされた電解銅めっき層4は、スルーホールの穿設,スルーホールめっきを順次行ったのち、該銅張り積層板の表面にある銅箔にエッチング処理を行って所望する線幅と所望する線間ピッチを備えた配線パターンを形成し、最後に、ソルダーレジストの形成やその他の仕上げ処理が行われる。
こうしたキャリア付き銅箔、特に銅箔の厚さが極端に薄い極薄銅箔は、ファインパターンを切ることが可能で、しかも、取り扱い時のハンドリング性に優れるという理由から、特にビルドアップ配線板を製造する際に適した銅箔であるという評価を得ている。しかし、その一方で以下のような問題点が顕在化してきた。
On the other hand, the electrolytic copper plating layer 4 bonded to the glass / epoxy base material is formed by sequentially performing through-hole drilling and through-hole plating, and then etching the copper foil on the surface of the copper-clad laminate. A wiring pattern having a desired line width and a desired line pitch is formed, and finally, a solder resist is formed and other finishing processes are performed.
This type of copper foil with carrier, especially ultra-thin copper foil with an extremely thin copper foil, can cut fine patterns, and because of its excellent handleability during handling, build-up wiring boards are especially useful. It has been evaluated as a copper foil suitable for manufacturing. However, on the other hand, the following problems have become apparent.

これまでの電解銅めっき層4は、図2に示すように表面に山と谷の部分が存在する。(以下これを素地山と称する。)
こうした表面に、粗化粒子5を電析させた時、素地山の頂点の部分に粗化粒子が集中して電析し、谷の部分には余り電析しない。
従って最終的に得られる粗化面は、Rzで3.5μm前後となり、ライン/スペース=30μm/30μm〜25μm/25μm位の細線を切るのが限界であり、これからの半導体パッケージ基板の主流になると言われているライン/スペース=15μm/15μm以下の細線を切るのは不可能である。(なお、ここでいう表面粗さRzとは、JISB06012−1994で規定する10点平均粗さのことである。)
このように、これまでのものに比較して、粗化処理後の表面が平滑でないと、ライン/スペース=15μm/15μm以下の細線を切るのは不可能である。
特開2000−269637号公報 特開2000−331537号公報 特表2003−524078号公報
As shown in FIG. 2, the electrolytic copper plating layer 4 so far has peaks and valleys on the surface. (Hereafter, this is called a base mountain.)
When the roughened particles 5 are electrodeposited on such a surface, the roughened particles are concentrated and deposited on the top of the base mountain, and are not electrodeposited much on the valley.
Therefore, the finally obtained roughened surface is about 3.5 μm in Rz, and the limit is to cut a thin line of line / space = 30 μm / 30 μm to 25 μm / 25 μm, which will become the mainstream of semiconductor package substrates in the future. It is impossible to cut a thin line of line / space = 15 μm / 15 μm or less. (The surface roughness Rz referred to here is the 10-point average roughness defined in JIS B06012-1994.)
Thus, it is impossible to cut a thin line of line / space = 15 μm / 15 μm or less unless the surface after the roughening treatment is smooth as compared with the conventional ones.
JP 2000-269637 A JP 2000-331537 A Special table 2003-524078 gazette

配線基板にライン/スペース=15μm/15μm以下の配線を設けるためには、粗化処理前の極薄銅箔層の表面粗さが低く(Rzが2.5μm以下)、表面がフラットで(素地山の最小ピーク間距離が5μm以上)、なおかつ表面に平均粒径2μm以下の結晶粒が表出していることが必要なことから、発明が解決しようとする課題は、前記の条件を満足する極薄銅箔を提供することである。
極薄銅箔の表面のRzが2.5μm以下でなおかつ素地山の最小ピーク間距離が5μm以上必要な理由は、粗化粒子5を電析した時に、素地山の頂点の部分に粗化粒子が集中することなく、全体的に均一に粗化粒子5が電析するためである。
また、表面に平均粒径2μm以下の結晶粒が表出していると、その上に粗化粒子5を電析した時に下地(極薄銅箔)の結晶粒の影響を受け、微細な粒を電析させることが可能である。
In order to provide a wiring board with lines / spaces = 15 μm / 15 μm or less, the surface roughness of the ultrathin copper foil layer before the roughening treatment is low (Rz is 2.5 μm or less) and the surface is flat (base) The minimum peak-to-peak distance of the peaks is 5 μm or more), and crystal grains having an average grain size of 2 μm or less are required to be exposed on the surface. Therefore, the problem to be solved by the invention is an electrode that satisfies the above conditions. It is to provide a thin copper foil.
The reason why the Rz of the surface of the ultrathin copper foil is 2.5 μm or less and the minimum distance between the peaks of the base mountain is required to be 5 μm or more is that when the roughened particles 5 are electrodeposited, the roughened particles are formed at the top of the base mountain. This is because the roughened particles 5 are electrodeposited uniformly on the whole without concentration.
In addition, when crystal grains having an average particle size of 2 μm or less are exposed on the surface, when the roughened particles 5 are electrodeposited on the surface, they are affected by the crystal grains of the base (ultra-thin copper foil), and fine grains Electrodeposition can be performed.

本発明は、キャリア箔上に、剥離層、極薄銅箔をこの順序に積層してなり、前記極薄銅箔は、その表面粗さが10点平均粗さRzで2.5μm以下であり、素地山の最小ピーク間距離が5μm以上である電解銅箔であることを特徴とするキャリア付き極薄銅箔である。   In the present invention, a peeling layer and an ultrathin copper foil are laminated in this order on a carrier foil, and the ultrathin copper foil has a surface roughness of 10 μm or less and an average roughness Rz of 2.5 μm or less. An ultrathin copper foil with a carrier, characterized in that it is an electrolytic copper foil whose minimum peak-to-peak distance is 5 μm or more.

また、本願発明は、キャリア箔上に、剥離層、極薄銅箔をこの順序に積層してなり、前記極薄銅箔は、その表面粗さが10点平均粗さRzで2.5μm以下であり、素地山の最小ピーク間距離が5μm以上あり、表面に平均粒径2μm以下の結晶粒が表出する電解銅箔であることを特徴とするキャリア付き極薄銅箔である。 Further, the present invention is obtained by laminating a peeling layer and an ultrathin copper foil in this order on a carrier foil, and the ultrathin copper foil has a surface roughness of 2.5 μm or less with a 10-point average roughness Rz. An ultrathin copper foil with a carrier, characterized in that it is an electrolytic copper foil in which the minimum peak-to-peak distance of the base mountain is 5 μm or more and crystal grains having an average particle diameter of 2 μm or less appear on the surface.

前記キャリア付き極薄銅箔は、その極薄銅箔表面が粗面化処理されていることが望ましく、該粗面化処理は銅の微細粒子を電析で形成することが好ましい。   The ultrathin copper foil with a carrier is desirably roughened on the surface of the ultrathin copper foil, and the roughening treatment preferably forms fine copper particles by electrodeposition.

前記剥離層は、Cr、Ni、Co、Fe、Mo、Ti、W、Pまたは/及びこれらの合金層またはこれらの水和酸化物層で形成することが好ましい。また、前記剥離層を、有機被膜で形成することも効果的である。   The release layer is preferably formed of Cr, Ni, Co, Fe, Mo, Ti, W, P or / and an alloy layer thereof or a hydrated oxide layer thereof. It is also effective to form the release layer with an organic coating.

本願発明は、前記キャリア付き極薄銅箔により高密度極薄微細配線を施したプリント配線板である。
また、本願発明は、前記キャリア付き極薄銅箔により高密度極薄微細配線を施した多層プリント配線板である。
This invention is a printed wiring board which gave the high-density ultra-thin fine wiring with the said ultra-thin copper foil with a carrier.
Moreover, this invention is a multilayer printed wiring board which gave the high-density ultra-thin fine wiring with the said ultra-thin copper foil with a carrier.

本発明の銅箔は、粗化粒子を付着させた後でもRzが2μm台におさまり、なおかつ15μmのラインをエッチングした後でも、15μmラインに粗下粒子が多数付着しているため、粗さが細かいにもかかわらず、微細ラインと配線基板(樹脂基板)とが高い密着強度を持つ。従って、本発明キャリア付き極薄銅箔により高密度極薄微細配線を施したプリント配線板を提供でき、また、本発明キャリア付き極薄銅箔により高密度極薄微細配線を施した多層プリント配線板を提供することができる。
本発明の極薄銅箔は、線幅が15μm以下と極細幅までエッチングが可能であり、ピール強度も強く、配線基板から剥離するようなことがない。
The copper foil of the present invention has a roughness Rz of 2 μm even after the rough particles are adhered, and even after etching the 15 μm line, a large number of coarse particles adhere to the 15 μm line. Despite being fine, the fine line and the wiring substrate (resin substrate) have high adhesion strength. Therefore, a printed wiring board can be provided with high density ultrathin fine wiring by the ultrathin copper foil with carrier of the present invention, and multilayer printed wiring with high density ultrathin fine wiring with the ultrathin copper foil with carrier of the present invention. Board can be provided.
The ultra-thin copper foil of the present invention can be etched to an extremely narrow line width of 15 μm or less, has high peel strength, and does not peel from the wiring board.

図1は本発明のキャリア付き極薄銅箔を示すもので、キャリア箔1の表面に剥離層2、極薄銅箔4が形成されている。極薄銅箔4の表面の表面粗さRzは2.5μm以下で素地山の最小ピーク間距離が5μm以上であり、その表面に粗化粒子4aからなる粗化粒子層5が形成されている。
極薄銅箔4の表面の表面粗さRzが2.5μm以下で、素地山の最小ピーク間距離が5μm以上の極薄銅箔層を作成するには、キャリア箔に設けた剥離層上に銅めっきが平滑で鏡面光沢を生成しうる銅めっき液によりめっきを行う。
平滑で鏡面光沢を生成しうる銅めっき液としては、特許3,313,277号に開示されている銅めっき液、或いは市販の装飾用光沢めっき添加剤を含むめっき液を使用することが最適である。
FIG. 1 shows an ultrathin copper foil with a carrier according to the present invention. A release layer 2 and an ultrathin copper foil 4 are formed on the surface of a carrier foil 1. The surface roughness Rz of the surface of the ultrathin copper foil 4 is 2.5 μm or less, the minimum peak-to-peak distance of the base mountain is 5 μm or more, and the roughened particle layer 5 made of the roughened particles 4 a is formed on the surface. .
In order to create an ultrathin copper foil layer having a surface roughness Rz of 2.5 μm or less and a minimum peak-to-peak distance of 5 μm or more on the surface of the ultrathin copper foil 4, on the release layer provided on the carrier foil Plating is performed with a copper plating solution that is smooth and can produce a specular gloss.
As a copper plating solution that can generate a smooth and specular gloss, it is optimal to use a copper plating solution disclosed in Japanese Patent No. 3,313,277 or a plating solution containing a commercially available bright plating additive for decoration. is there.

これらのめっき液から得られる極薄銅層は表面粗さが小さく、なおかつフラットな表面状態であり、さらに表面に平均粒径2μm以下の結晶粒が表出しているため、この上に銅の粗化粒子を付着させた場合でも、平均粒径2μm以下の微細粒子を図示するように均等に形成することが可能である。
なお、上記した箔本体の結晶粒の平均粒径とは、まず結晶粒が形成されている表面の写真を透過型電子顕微鏡で撮影し、その写真における結晶粒の面積を10点以上実測し、その結晶粒を真円としたときの直径を計算し、その計算値のことを言う。
また、微細粒子の平均粒径とは、走査型電子顕微鏡で実測し、10点以上測定した値の平均値を言う。
The ultrathin copper layer obtained from these plating solutions has a small surface roughness and a flat surface state, and crystal grains having an average grain size of 2 μm or less are exposed on the surface. Even when the particles are attached, fine particles having an average particle diameter of 2 μm or less can be uniformly formed as shown in the figure.
In addition, the average particle diameter of the crystal grains of the foil body described above is a photograph of the surface on which the crystal grains are formed with a transmission electron microscope, and the area of the crystal grains in the photograph is measured more than 10 points, Calculate the diameter of the crystal grain as a perfect circle and say the calculated value.
Moreover, the average particle diameter of a fine particle means the average value of the value measured by the scanning electron microscope and measured 10 points or more.

キャリア箔1上に設ける剥離層2は、Cr、Ni、Co、Fe、Mo、Ti、W、Pまたは/及びこれらの合金層またはこれらの水和物層からなる層、または有機被膜であることが望ましい。
これらの剥離層を形成する金属(合金を含む)及びそれらの水和酸化物は陰極電解処理により形成することが好ましい。なお、キャリア付き極薄銅箔を絶縁基材に加熱プレス後の剥離の安定化を図る上で、剥離層の下地にニッケル、鉄またはこれらの合金層を併せて設けると良い。
The release layer 2 provided on the carrier foil 1 is a layer made of Cr, Ni, Co, Fe, Mo, Ti, W, P or / and an alloy layer thereof or a hydrate layer thereof, or an organic coating. Is desirable.
The metal (including alloy) and their hydrated oxide that form these release layers are preferably formed by cathodic electrolysis. In addition, in order to stabilize peeling after heat pressing an ultrathin copper foil with a carrier on an insulating base material, it is preferable to provide nickel, iron or an alloy layer thereof together as a base of the peeling layer.

剥離層として好適なクロム合金の二元合金としては、ニッケル−クロム、コバルト−クロム、クロム−タングステン、クロム−銅、クロム−鉄、クロム−チタンが挙げられ、三元系合金としては、ニッケル−鉄−クロム、ニッケル−クロム−モリブデン、ニッケル−クロム−タングステン、ニッケル−クロム−銅、ニッケル−クロム−リン、コバルト−鉄−クロム、コバルト−クロム−モリブデン、コバルト−クロム−タングステン、コバルト−クロム−銅、コバルト−クロム−リン等が挙げられる。
また、剥離層に有機被膜を用いる場合には、窒素含有有機化合物、硫黄含有有機化合物及びカルボン酸の中から選択される一種又は二種以上からなるものを用いることが好ましい。
Examples of the binary alloy of the chromium alloy suitable as the release layer include nickel-chromium, cobalt-chromium, chromium-tungsten, chromium-copper, chromium-iron, and chromium-titanium. Iron-chromium, nickel-chromium-molybdenum, nickel-chromium-tungsten, nickel-chromium-copper, nickel-chromium-phosphorus, cobalt-iron-chromium, cobalt-chromium-molybdenum, cobalt-chromium-tungsten, cobalt-chromium- Examples thereof include copper and cobalt-chromium-phosphorus.
Moreover, when using an organic film for a peeling layer, it is preferable to use what consists of 1 type, or 2 or more types selected from a nitrogen containing organic compound, a sulfur containing organic compound, and carboxylic acid.

キャリア箔を剥離する際の剥離強度は、これらの金属の付着量により影響される。すなわち剥離層が厚いと(めっき付着量が多いと)キャリア箔表面を、剥離層を構成する金属(以下単に剥離層金属という)が完全に覆った状態となり、剥離強度は剥離層金属表面とこの後に積層される極薄銅箔との結合面が、引き剥がす力になると考えられる。
これに対して剥離層の厚さが薄い(めっき付着量が少ない)場合には、キャリア箔表面が剥離層金属で完全に覆われておらず、剥離強度は、僅かに露出しているキャリア箔及び剥離層金属とこの上に付着させる極薄銅箔との結合力が、引き剥がす力になると考えられる。
The peel strength when peeling the carrier foil is affected by the amount of these metals attached. That is, when the release layer is thick (when the amount of plating is large), the carrier foil surface is completely covered with the metal constituting the release layer (hereinafter simply referred to as release layer metal), and the peel strength is the same as that of the release layer metal surface. It is considered that the bonding surface with the ultrathin copper foil to be laminated later becomes a peeling force.
On the other hand, when the thickness of the release layer is thin (the coating amount is small), the carrier foil surface is not completely covered with the release layer metal, and the peel strength is slightly exposed. The bonding force between the release layer metal and the ultrathin copper foil deposited on the release layer metal is considered to be a peeling force.

従って、剥離層を形成する金属めっきの付着量によりキャリア箔と極薄銅箔との剥離強度は変化するが、ある程度剥離層を厚く形成(付着)すると剥離強度はそれ以上変化しなくなるため、剥離層を形成する金属の付着量を、100mg/dm以上にめっき付着量を多くしても剥離強度は変化しない。 Therefore, the peel strength between the carrier foil and the ultra-thin copper foil changes depending on the amount of metal plating that forms the release layer, but if the release layer is formed (attached) to a certain extent, the peel strength will not change any further. Even if the adhesion amount of the metal forming the layer is increased to 100 mg / dm 2 or more, the peel strength does not change.

(1)極薄銅層の作成
表面(S面)粗さ1.2μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面にクロムの電気めっきを連続的に行い、厚み0.005μmのクロムめっき層(剥離層)を形成した。ついで、下記組成1に示す硫酸銅溶液を電解液として、電流密度30A/dm、液温50℃の条件で電解し、5μm厚みの極薄銅層(銅箔)を電気めっきした。
(組成1)
硫酸銅(CuSO・5HO) 350g/l
硫酸(HSO) 110g/l
1−メルカプト3−プロパンスルホン酸ナトリウム 1ppm
ヒドロキシエチルセルロース 4ppm
低分子量膠(分子量3,000) 4ppm
Cl 30ppm
(1) Creation of an ultrathin copper layer An untreated electrolytic copper foil having a surface (S surface) roughness of 1.2 μm and a thickness of 35 μm was used as a carrier foil. A 005 μm chromium plating layer (peeling layer) was formed. Then, using a copper sulfate solution having the following composition 1 as an electrolytic solution, electrolysis was performed under conditions of a current density of 30 A / dm 2 and a liquid temperature of 50 ° C., and an ultrathin copper layer (copper foil) having a thickness of 5 μm was electroplated.
(Composition 1)
Copper sulfate (CuSO 4 · 5H 2 O) 350g / l
Sulfuric acid (H 2 SO 4 ) 110 g / l
1-mercapto-3-propanesulfonic acid sodium salt 1ppm
Hydroxyethyl cellulose 4ppm
Low molecular weight glue (molecular weight 3,000) 4ppm
Cl - 30ppm

(2)微細粗化粒子の電析
極薄銅箔の上に下記の条件で、直流による陰極電解処理を施し、銅微細粗化粒子を電析させた。
(2−1)微細粒子核の形成
(a)電解液の組成
硫酸銅(CuSO・5HO) 100g/l
硫酸(HSO) 120g/l
モリブデン酸ナトリウム
(NaMo・2HO) 0.6g/l
硫酸第一鉄(FeSO・7HO) 15g/l
(b)電解液の温度:35℃
(c)電流密度:40A/dm
(d)処理時間:3.5秒
(2−2)カプセルめっき
(a)電解液の組成
硫酸銅(CuSO・5HO) 250g/l
硫酸(HSO) 100g/l
(b)電解液の温度:50℃
(c)電流密度:20A/dm
(d)処理時間:7.0秒
(2) Electrodeposition of finely roughened particles Cathodic electrolytic treatment by direct current was performed on an ultrathin copper foil under the following conditions to deposit copper finely roughened particles.
(2-1) Formation of fine particle nuclei (a) Composition of electrolyte solution Copper sulfate (CuSO 4 .5H 2 O) 100 g / l
Sulfuric acid (H 2 SO 4 ) 120 g / l
Sodium molybdate
(Na 2 Mo 4 .2H 2 O) 0.6 g / l
Ferrous sulfate (FeSO 4 · 7H 2 O) 15g / l
(B) Electrolyte temperature: 35 ° C
(C) Current density: 40 A / dm 2
(D) Treatment time: 3.5 seconds (2-2) Capsule plating (a) Composition of electrolyte solution Copper sulfate (CuSO 4 .5H 2 O) 250 g / l
Sulfuric acid (H 2 SO 4 ) 100 g / l
(B) Electrolyte temperature: 50 ° C
(C) Current density: 20 A / dm 2
(D) Processing time: 7.0 seconds

(3)表面処理
得られた銅粒子が付着した極薄銅箔表面に、ニッケル−リンめっき(Ni=0.1mg/dm)と亜鉛めっき(Zn=0.1mg/dm)を施し、更にその上にクロメート処理(Cr=0.06mg/dm)を施した後、エポキシ系シランカップリング剤処理(Si=0.004mg/dm)を施した。
(3) Surface treatment Nickel-phosphorus plating (Ni = 0.1 mg / dm 2 ) and galvanization (Zn = 0.1 mg / dm 2 ) are applied to the surface of the ultrathin copper foil to which the obtained copper particles are adhered. Further, chromate treatment (Cr = 0.06 mg / dm 2 ) was performed thereon, followed by epoxy silane coupling agent treatment (Si = 0.004 mg / dm 2 ).

(1)極薄銅層の作成
表面(S面)粗さ1.2μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面にクロムの電気めっきを連続的に行い、厚み0.005μmのクロムめっき層(剥離層)を形成した。ついで、下記組成2に示される硫酸銅溶液を電解液として、電流密度10A/dm、液温35℃の条件で電解することによって、5μm厚みの極薄銅層を電気めっきした。
(組成2)
硫酸銅(CuSO・5HO) 240g/l
硫酸(HSO) 60g/l
日本シェーリング(株)カパラシド210
メイキャップ剤 10cc/l
光沢剤(A) 0.5cc/l
光沢剤(B) 補充にのみ使用
Cl 30ppm
なお、光沢剤の補充は、電流量1,000AHに対して光沢剤(A)及び光沢剤(B)を各々300cc添加した。
(1) Creation of an ultrathin copper layer An untreated electrolytic copper foil having a surface (S surface) roughness of 1.2 μm and a thickness of 35 μm was used as a carrier foil. A 005 μm chromium plating layer (peeling layer) was formed. Next, an ultrathin copper layer having a thickness of 5 μm was electroplated by electrolysis under the conditions of a current density of 10 A / dm 2 and a liquid temperature of 35 ° C. using a copper sulfate solution represented by the following composition 2 as an electrolytic solution.
(Composition 2)
Copper sulfate (CuSO 4 · 5H 2 O) 240g / l
Sulfuric acid (H 2 SO 4 ) 60 g / l
Nippon Schering Co., Ltd. Kaparaside 210
Makeup agent 10cc / l
Brightener (A) 0.5cc / l
Brightener (B) Used only for replenishment Cl - 30ppm
The replenishment of the brightener was performed by adding 300 cc of brightener (A) and brightener (B) to the current amount of 1,000 AH.

(2)微細粗化粒子の電析
極薄銅箔の上に実施例1と同じ条件で、直流による陰極電解処理を施し、銅微細粗化粒子を電析させた。
(3)表面処理
得られた銅粒子が付着した極薄銅箔表面に、実施例1と同様の表面処理を施した。
(2) Electrodeposition of fine roughened particles Cathodic electrolytic treatment with direct current was performed on ultrathin copper foil under the same conditions as in Example 1 to deposit copper finely roughened particles.
(3) Surface treatment The surface treatment similar to Example 1 was performed to the ultra-thin copper foil surface to which the obtained copper particle adhered.

表面(S面)粗さ1.8μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面に実施例1と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。   An untreated electrolytic copper foil having a surface (S surface) roughness of 1.8 μm and a thickness of 35 μm was used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer were formed on the S surface in the same manner as in Example 1. Then, surface treatment was performed to create an ultrathin copper foil with a carrier.

表面(S面)粗さ1.8μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面に実施例2と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。   An untreated electrolytic copper foil having a surface (S surface) roughness of 1.8 μm and a thickness of 35 μm was used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer were formed on the S surface in the same manner as in Example 2. Then, surface treatment was performed to create an ultrathin copper foil with a carrier.

表面(S面)粗さ2.4μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面に実施例1と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。   An untreated electrolytic copper foil having a surface (S surface) roughness of 2.4 μm and a thickness of 35 μm was used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer were formed on the S surface in the same manner as in Example 1. Then, surface treatment was performed to create an ultrathin copper foil with a carrier.

表面(S面)粗さ2.4μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面に実施例2と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。   An untreated electrolytic copper foil having a surface (S surface) roughness of 2.4 μm and a thickness of 35 μm was used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer were formed on the S surface in the same manner as in Example 2. Then, surface treatment was performed to create an ultrathin copper foil with a carrier.

〔比較例1〕
(1)極薄銅箔の形成方法
表面(S面)粗さ1.2μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面にクロムの電気めっきを連続的に行い、厚み0.005μmのクロムめっき層(剥離層)を形成した。ついで、下記組成3に示す硫酸銅溶液を電解液として、電流密度30A/dm、液温50℃の条件で電解することによって、5μm厚みの極薄銅層を電気めっきした。
(組成3)
硫酸銅(CuSO・5HO) 350g/l
硫酸(HSO) 110g/l
膠 2ppm
Cl 30ppm
(2)微細粒子の電析
(2−1)微細粒子核の形成
実施例1に示した方法と同様の方法により銅粒子を電析させた。
(2−2)カプセルめっき
実施例1に示した方法と同様の方法によりカプセルめっきを電析させた。
(3)表面処理
実施例1に示した方法と同様の方法により、表面処理を行った。
[Comparative Example 1]
(1) Method for forming ultrathin copper foil An untreated electrolytic copper foil having a surface (S surface) roughness of 1.2 μm and a thickness of 35 μm is used as a carrier foil, and chromium electroplating is continuously performed on the S surface to obtain a thickness of 0 A .005 μm chromium plating layer (peeling layer) was formed. Next, an ultrathin copper layer having a thickness of 5 μm was electroplated by electrolysis under the conditions of a current density of 30 A / dm 2 and a liquid temperature of 50 ° C. using a copper sulfate solution having the following composition 3 as an electrolytic solution.
(Composition 3)
Copper sulfate (CuSO 4 · 5H 2 O) 350g / l
Sulfuric acid (H 2 SO 4 ) 110 g / l
Glue 2ppm
Cl - 30ppm
(2) Electrodeposition of fine particles (2-1) Formation of fine particle nuclei Copper particles were electrodeposited by the same method as shown in Example 1.
(2-2) Capsule plating Capsule plating was electrodeposited by the same method as shown in Example 1.
(3) Surface treatment The surface treatment was performed by the same method as the method shown in Example 1.

〔比較例2〕
表面(S面)粗さ1.8μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面に比較例1と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。
[Comparative Example 2]
An untreated electrolytic copper foil having a surface (S surface) roughness of 1.8 μm and a thickness of 35 μm was used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer were formed on the S surface in the same manner as in Comparative Example 1. Then, surface treatment was performed to create an ultrathin copper foil with a carrier.

〔比較例3〕
表面(S面)粗さ2.4μm、厚み35μmの未処理電解銅箔をキャリア箔とし、そのS面に比較例1と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。
[Comparative Example 3]
An untreated electrolytic copper foil having a surface (S surface) roughness of 2.4 μm and a thickness of 35 μm was used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer were formed on the S surface in the same manner as in Comparative Example 1. Then, surface treatment was performed to create an ultrathin copper foil with a carrier.

〔比較例4〕
表面粗さ0.6μm、厚み35μmの圧延銅箔をキャリア箔とし、その表面に比較例1と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。
[Comparative Example 4]
A rolled copper foil having a surface roughness of 0.6 μm and a thickness of 35 μm is used as a carrier foil, and a release layer, an ultrathin copper foil, and a roughened particle layer are formed on the surface in the same manner as in Comparative Example 1, and then a surface treatment is performed. An ultrathin copper foil with a carrier was prepared.

〔比較例5〕
特表2003−524078公報に開示されている組成の電解液を使用して厚み35μの未処理電解銅箔をキャリア箔として作成した。そのM面(粗さ2.0μm)上に比較例1と同様にして剥離層、極薄銅箔、粗化粒子層を形成し、次いで表面処理を施してキャリア付き極薄銅箔を作成した。
[Comparative Example 5]
An untreated electrolytic copper foil having a thickness of 35 μm was prepared as a carrier foil using an electrolytic solution having a composition disclosed in JP-T-2003-524078. A release layer, an ultrathin copper foil, and a roughened particle layer were formed on the M surface (roughness: 2.0 μm) in the same manner as in Comparative Example 1, and then surface treatment was performed to create an ultrathin copper foil with a carrier. .

物性の測定
実施例1乃至6、比較例1乃至5で作成したキャリア付き極薄銅箔につき、該極薄銅箔の表面粗さ(10点平均粗さ)Rz、素地山の最小ピーク間距離、表面結晶粒の平均粒径をそれぞれ測定し、その結果を第1表に示した。
本発明キャリア付き極薄銅箔は、銅めっきの均一電着性が優れ、表1から明らかなように、5μm厚さの銅めっきを行うことにより、原箔表面粗さが2.4ミクロンと粗いものであっても、極薄銅箔表面の表面粗さが小さくなり、粗化処理を行った後の表面粗さも小さく抑えられている。
Measurement of physical properties For the ultrathin copper foils with carriers prepared in Examples 1 to 6 and Comparative Examples 1 to 5, the surface roughness (10-point average roughness) Rz of the ultrathin copper foil, the minimum peak-to-peak distance of the base mountain The average grain size of the surface crystal grains was measured, and the results are shown in Table 1.
The ultrathin copper foil with a carrier of the present invention is excellent in the uniform electrodeposition of copper plating, and as shown in Table 1, the surface roughness of the original foil is 2.4 microns by performing copper plating with a thickness of 5 μm. Even if it is rough, the surface roughness of the ultrathin copper foil surface is reduced, and the surface roughness after the roughening treatment is also kept small.

プリント配線板の作成
次いで、実施例1乃至6の極薄銅箔により、プリント配線板、多層プリント配線板を作成したところ、ライン/スペース=10μm/10μmといった極細幅でのエッチングも可能であった。
Preparation of printed wiring board Next, when a printed wiring board and a multilayer printed wiring board were prepared using the ultrathin copper foils of Examples 1 to 6, etching with an extremely narrow width of line / space = 10 μm / 10 μm was possible. .

ピール強度の測定
実施例1乃至6、比較例1乃至5で作成したキャリア付き極薄銅箔のピール強度を測定した。測定は、10mm幅としたキャリア付き極薄銅箔をFR−4基材に張り付け、次いでキャリア箔を引き剥がし、極薄銅箔上にめっきを行って厚さを35μmとした後、引き剥がしてピール強度を測定した。その結果を表1に併記する。表1に示すように、通常の測定方法(10mm幅)では実施例と比較例ではむしろ比較例の方がピール強度は大きい。
比較例の方がピール強度が大きいのは、粗化前の銅箔表面に山谷(凹凸)があるため、山の部分に粗化粒子が集中して電析し、谷の部分には粗化粒子がほとんど電析していないが、測定が10mm幅と広い幅であるため粗化粒子のアンカー効果によりピール強度が大きくなっているものである。しかし、50μm幅以下というような極細幅になってくるとピール強度は以下に示すように減少してくる。
Measurement of Peel Strength The peel strength of the ultrathin copper foil with a carrier prepared in Examples 1 to 6 and Comparative Examples 1 to 5 was measured. The measurement was performed by attaching an ultrathin copper foil with a carrier having a width of 10 mm to the FR-4 substrate, then peeling off the carrier foil, plating on the ultrathin copper foil to a thickness of 35 μm, and then peeling off. Peel strength was measured. The results are also shown in Table 1. As shown in Table 1, in the normal measurement method (10 mm width), the peel strength is higher in the comparative example than in the example and the comparative example.
Compared with the comparative example, the peel strength is higher because the surface of the copper foil before roughening has peaks and valleys (irregularities). Although the particles are hardly electrodeposited, since the measurement is as wide as 10 mm, the peel strength is increased by the anchor effect of the roughened particles. However, when the width becomes very narrow such as 50 μm or less, the peel strength decreases as shown below.

剥離強度
前記した比較例で作成した極薄銅箔の剥離強度は幅が50μm以下というような極細幅になってくるとピール強度が減少する原因は、線幅が細くなるに従って線幅内での粗化粒子の付着量がまばらになるためである。このような現象を確認するためにテープ剥離テストをライン/スペース=50μm/50μmとした本発明極薄銅箔並びに比較例の極薄銅箔で作成したプリント配線板により実施し、その結果を表1に示した。
なお、テープ剥離テストは、上記のL/S=50/50のテストパターンに、粘着テープを貼り付けて引き剥がした時、パターンが樹脂基材から剥離するかどうかで評価した。
第1表に示したようにライン/スペース=50/50μmというような極細幅になると、本発明の極薄銅箔に比較して比較例の銅箔配線は剥離し易くなっている。
Peel strength The peel strength of the ultrathin copper foil prepared in the comparative example described above is such that the peel strength decreases when the width becomes 50 μm or less. This is because the amount of coarse particles attached becomes sparse. In order to confirm such a phenomenon, the tape peeling test was carried out with the printed wiring board made of the ultrathin copper foil of the present invention and the comparative example of ultrathin copper foil with line / space = 50 μm / 50 μm. It was shown in 1.
In addition, the tape peeling test evaluated whether a pattern peels from a resin base material, when an adhesive tape is affixed and peeled off to said test pattern of said L / S = 50/50.
As shown in Table 1, when the line / space = 50/50 μm becomes extremely narrow, the copper foil wiring of the comparative example is more easily peeled than the ultrathin copper foil of the present invention.

エッチング性の評価
FR−4基材に実施例1乃至6及び比較例1乃至5のキャリア付き5μm箔をプレスし、キャリアを引き剥がした。
この後、銅箔表面に、ライン/スペース=10/10μm、15/15μm、20/20μm、25/25μm、30/30μm、35/35μm、40/40μm、45/45μm、50/50μmのテストパターン(ライン長さ30mm、ライン本数10本)を印刷し、塩化銅のエッチング液でエッチングを行った。
10本のラインがブリッジすることなくエッチングできた場合の線幅を数値で第1表に示した。実施例で作成した極薄銅箔では15μm以下までエッチング可能であるのに対し、比較例で作成した極薄銅箔では20μmが最低であった。
Evaluation of etching property 5 μm foils with a carrier of Examples 1 to 6 and Comparative Examples 1 to 5 were pressed on a FR-4 substrate, and the carrier was peeled off.
Thereafter, on the copper foil surface, test patterns of line / space = 10/10 μm, 15/15 μm, 20/20 μm, 25/25 μm, 30/30 μm, 35/35 μm, 40/40 μm, 45/45 μm, 50/50 μm (Line length 30 mm, number of lines 10) was printed and etched with a copper chloride etchant.
Table 1 shows the line width when 10 lines can be etched without bridging. The ultrathin copper foil prepared in the example can be etched to 15 μm or less, whereas the ultrathin copper foil prepared in the comparative example has a minimum of 20 μm.

Figure 2005161840
Figure 2005161840

上述したように、本発明はキャリア箔の表面粗さに影響されることなく微細結晶粒が表出する極薄電解銅箔を作成でき、その箔上に粗化粒子を付着させた後でもRzが2μm台におさまり、ライン/スペースが15μm以下の極細幅までエッチングが可能であり、なおかつ15μm以下のラインをエッチングした後でも、15μm以下のラインに粗化粒子が多数付着しているため、粗さが低いにもかかわらず、微細ラインと配線基板とが高い密着強度を持つ、優れた効果を有し、密着強度が高いことから本発明極薄銅箔により、超ファインパターンのプリント配線板、および超ファインパターンの多層プリント配線板を提供することができるものである。   As described above, the present invention can produce an ultrathin electrolytic copper foil in which fine crystal grains are exposed without being affected by the surface roughness of the carrier foil, and even after the roughened particles are adhered on the foil, the Rz Can be etched to a very narrow line / space of 15 μm or less, and even after etching a line of 15 μm or less, many coarse particles adhere to the line of 15 μm or less. Despite being low, the fine line and the wiring board have a high adhesion strength, have an excellent effect, and the adhesion strength is high. In addition, a multilayer printed wiring board having an ultrafine pattern can be provided.

本発明の銅箔は各種配線機器の回路導体として、また、プリント配線板は各種電子機器等に適用、応用することが可能である。   The copper foil of the present invention can be applied and applied to circuit conductors of various wiring devices, and the printed wiring board can be applied to various electronic devices.

図1は本発明の一実施例を示すキャリア付き極薄銅箔の拡大断面図である。FIG. 1 is an enlarged cross-sectional view of an ultrathin copper foil with a carrier according to an embodiment of the present invention. 図2は従来のキャリア付き極薄銅箔の拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a conventional ultrathin copper foil with a carrier.

符号の説明Explanation of symbols

1. キャリア銅箔
2. 剥離層
4. 極薄銅箔
4a 微細粗化粒子
5. 微細粗化粒子層
1. 1. Carrier copper foil Release layer
4). 4. Ultrathin copper foil 4a Fine roughened particles Fine rough particle layer

Claims (7)

キャリア箔上に、剥離層、極薄銅箔をこの順序に積層してなり、粗面化処理を施す前の前記極薄銅箔は、その表面粗さが10点平均粗さRzで2.5μm以下であり、素地山の最小ピーク間距離が5μm以上である電解銅箔であることを特徴とするキャリア付き極薄銅箔。 A peeling layer and an ultrathin copper foil are laminated in this order on the carrier foil, and the ultrathin copper foil before the surface roughening treatment has a surface roughness of 10-point average roughness Rz of 2. An ultra-thin copper foil with a carrier, characterized in that it is an electrolytic copper foil having a minimum peak-to-peak distance of 5 μm or less and a base mountain. キャリア箔上に、剥離層、極薄銅箔をこの順序に積層してなり、粗面化処理を施す前の前記極薄銅箔は、その表面粗さが10点平均粗さRzで2.5μm以下であり、素地山の最小ピーク間距離が5μm以上あり、表面に平均粒径2μm以下の結晶粒が表出する電解銅箔であることを特徴とするキャリア付き極薄銅箔。 A peeling layer and an ultrathin copper foil are laminated in this order on the carrier foil, and the ultrathin copper foil before the surface roughening treatment has a surface roughness of 10-point average roughness Rz of 2. An ultrathin copper foil with a carrier, characterized in that it is an electrolytic copper foil having a minimum peak-to-peak distance of 5 μm or more and crystal grains having an average particle diameter of 2 μm or less appearing on the surface. 請求項1又は2に記載の前記極薄銅箔の表面が粗面化処理されていることを特徴とするキャリア付き極薄銅箔。   The ultrathin copper foil with a carrier, wherein the surface of the ultrathin copper foil according to claim 1 or 2 is roughened. 請求項1又は2に記載の前記極薄銅箔の表面が銅の微細粒子を電析する粗面化処理が施されていることを特徴とするキャリア付き極薄銅箔。   The ultrathin copper foil with a carrier, wherein the surface of the ultrathin copper foil according to claim 1 or 2 is subjected to a roughening treatment for electrodepositing fine copper particles. 請求項1又は2に記載の前記剥離層が、Cr、Ni、Co、Fe、Mo、Ti、W、Pまたは/及びこれらの合金層またはこれらの水和酸化物層、または有機被膜であることを特徴とするキャリア付き極薄銅箔。   The said peeling layer of Claim 1 or 2 is Cr, Ni, Co, Fe, Mo, Ti, W, P or / and these alloy layers or these hydrated oxide layers, or an organic film An ultra-thin copper foil with a carrier. 請求項1乃至5の何れかに記載のキャリア付き極薄銅箔により高密度極薄微細配線を施したことを特徴とするプリント配線板。   A printed wiring board, wherein high-density ultra-thin and fine wiring is provided by the ultra-thin copper foil with a carrier according to claim 1. 請求項1乃至5の何れかに記載のキャリア付き極薄銅箔により高密度極薄微細配線を施したことを特徴とする多層プリント配線板。   A multilayer printed wiring board, wherein high-density ultra-thin and fine wiring is provided by the ultra-thin copper foil with a carrier according to any one of claims 1 to 5.
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