JP2005159364A - 蒸着チェンバーから誘電率が大きな材料を除去する方法 - Google Patents
蒸着チェンバーから誘電率が大きな材料を除去する方法 Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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Abstract
【解決手段】 ホウ素含有反応剤を含む第1のガス混合物を反応装置に導入することにより、その第1のガス混合物をその反応装置に含まれている上記材料と反応させて揮発性生成物とホウ素含有副生成物を生成させるステップと;フッ素含有反応剤を含む第2のガス混合物を反応装置に導入することにより、その第2のガス混合物をその反応装置に含まれているホウ素含有副生成物と反応させて揮発性生成物を形成するステップと;上記揮発性生成物を反応装置から除去するステップとを含むように構成する。
【選択図】 図1
Description
BCl3を用いた1ステップでのクリーニング
BCl3とNF3を用いた1ステップでのクリーニング
2ステップでのクリーニング
Claims (21)
- 二酸化ケイ素よりも大きな誘電率を持つ材料を反応装置の表面の少なくとも一部から除去する方法であって、
ホウ素含有反応剤を含む第1のガス混合物を反応装置に導入することにより、その第1のガス混合物をその反応装置に含まれている上記材料と反応させて揮発性生成物とホウ素含有副生成物を生成させることと;
フッ素含有反応剤を含む第2のガス混合物を反応装置に導入することにより、その第2のガス混合物をその反応装置に含まれているホウ素含有副生成物と反応させて揮発性生成物を形成することと;
上記揮発性生成物を反応装置から除去することと;
を含む方法。 - 上記反応装置が原子層堆積反応装置である、請求項1に記載の方法。
- 上記第2の導入ステップを、上記第1の導入ステップの少なくとも一部を実行している間に実行するか、もしくは上記第1の導入ステップが終了してから実行する、請求項1又は2に記載の方法。
- 上記除去ステップを、上記第1の導入ステップおよび/または上記第2の導入ステップの少なくとも一部を実行している間に実行する、請求項1〜3のいずれか1項に記載の方法。
- 上記第1および第2の導入ステップを交互に複数回実行する、請求項1〜4のいずれか1項に記載の方法。
- 上記材料が、遷移金属の酸化物、遷移金属のケイ酸塩、13族金属の酸化物、13族金属のケイ酸塩、窒素を含む13族金属の酸化物、窒素を含む13族金属のケイ酸塩、窒素を含む遷移金属の酸化物および窒素を含む遷移金属のケイ酸塩から選択される少なくとも1種類の材料であるか、あるいは、遷移金属の酸化物、遷移金属のケイ酸塩、13族金属の酸化物、13族金属のケイ酸塩、窒素を含む13族金属の酸化物、窒素を含む13族金属のケイ酸塩、窒素を含む遷移金属の酸化物、窒素を含む遷移金属のケイ酸塩およびその混合物からなる群から選択される材料の少なくとも1層を含むラミネートである、請求項1〜5のいずれか1項に記載の方法。
- 上記材料が、Al2O3、HfO2、ZrO2、HfSixOy、ZrSixOy(式中、xは0より大きな数であり、yは2x+2であり、これらの化合物はどれも窒素を含んでいる)、およびその混合物からなる群から選択される少なくとも1種類の材料である、請求項1〜5のいずれか1項に記載の方法。
- 上記ホウ素含有反応剤が、BCl3、BBr3、BI3、BF3およびその混合物からなる群から選択される少なくとも1種類の物質である、請求項1〜7のいずれか1項に記載の方法。
- 上記ホウ素含有反応剤がBCl3である、請求項8に記載の方法。
- 上記フッ素含有反応剤が、NF3、ClF3、ClF、SF6、ペルフルオロカーボン、ヒドロフルオロカーボン、オキシフルオロカーボン、次亜フッ素酸塩、フルオロ過酸化物、フルオロ三酸化物、COF2、NOF、F2、NFxCl3-x(式中、xは1〜2の数である)およびその混合物からなる群から選択される少なくとも1種類の物質である、請求項1〜9のいずれか1項に記載の方法。
- 上記フッ素含有反応剤がNF3である、請求項10に記載の方法。
- 上記フッ素含有反応剤がF2である、請求項10に記載の方法。
- 上記第1のガス混合物および/または上記第2のガス混合物が、少なくとも1つのガス・シリンダー、安全供給システム又は真空供給システムから反応装置に運ばれる、請求項1〜12のいずれか1項に記載の方法。
- 上記第1のガス混合物および/または上記第2のガス混合物を、使用現場での生成装置によってその場で形成する、請求項1〜13のいずれか1項に記載の方法。
- 上記第1のガス混合物および/または上記第2のガス混合物が、不活性なガス希釈剤をさらに含む、請求項1〜14のいずれか1項に記載の方法。
- 上記不活性なガス希釈剤が、窒素、CO、ヘリウム、ネオン、アルゴン、クリプトン、キセノンおよびその混合物から選択される、請求項15に記載の方法。
- 反応装置の表面の少なくとも一部から材料を除去する方法であって、
誘電率が4.1もしくはそれよりも大きく、遷移金属の酸化物、遷移金属のケイ酸塩、13族金属の酸化物、13族金属のケイ酸塩、窒素を含む13族金属の酸化物、窒素を含む13族金属のケイ酸塩、窒素を含む遷移金属の酸化物および窒素を含む遷移金属のケイ酸塩から選択される少なくとも1種類の材料であるか、あるいは、遷移金属の酸化物、遷移金属のケイ酸塩、13族金属の酸化物、13族金属のケイ酸塩、窒素を含む13族金属の酸化物、窒素を含む13族金属のケイ酸塩、窒素を含む遷移金属の酸化物、窒素を含む遷移金属のケイ酸塩およびその混合物からなる群から選択される材料の少なくとも1層を含むラミネートである材料で、表面の少なくとも一部が少なくとも部分的に覆われている反応装置を用意することと;
ホウ素含有反応剤を含む第1のガス混合物を上記反応装置に導入することと;
上記第1のガス混合物を1つ以上のエネルギー源に曝露して活性種を十分に生成させ、その活性種を上記材料と反応させることにより揮発性生成物とホウ素含有副生成物を形成することと;
フッ素含有反応剤を含む第2のガス混合物を上記反応装置に導入することと;
上記第2のガス混合物を1つ以上のエネルギー源に曝露して活性種を十分に生成させ、その活性種を上記ホウ素含有副生成物と反応させることにより揮発性生成物を形成することと;
上記揮発性生成物を反応装置から除去することと;
を含む方法。 - 上記第1のガス混合物を1つ以上のエネルギー源に曝露し、次いで、
上記第1の曝露ステップを実行した後に上記第2の導入ステップを実行するか、もしくは上記第1の導入ステップの少なくとも一部を実行している間に上記第1の曝露ステップを実行する、請求項17に記載の方法。 - 上記第2のガス混合物を1つ以上のエネルギー源に曝露し、上記第2の曝露ステップを、上記第2の導入ステップの少なくとも一部を実行している間に実行する、請求項17又は18に記載の方法。
- 上記第1の曝露ステップおよび/または上記第2の曝露ステップの温度が150℃以上である、請求項17〜19のいずれか1項に記載の方法。
- 上記第1の曝露ステップおよび/または上記第2の曝露ステップの圧力が10ミリトル以上である、請求項17〜20のいずれか1項に記載の方法。
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EP1536035A2 (en) | 2005-06-01 |
CN100347815C (zh) | 2007-11-07 |
TWI255862B (en) | 2006-06-01 |
US20050108892A1 (en) | 2005-05-26 |
EP1536035A3 (en) | 2005-07-13 |
KR20050050569A (ko) | 2005-05-31 |
TW200517523A (en) | 2005-06-01 |
US7055263B2 (en) | 2006-06-06 |
SG112099A1 (en) | 2005-06-29 |
CN1638027A (zh) | 2005-07-13 |
KR100644176B1 (ko) | 2006-11-10 |
JP2009033202A (ja) | 2009-02-12 |
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A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20090313 |