JP2003073841A - Wiring board and manufacturing method therefor - Google Patents
Wiring board and manufacturing method thereforInfo
- Publication number
- JP2003073841A JP2003073841A JP2001258378A JP2001258378A JP2003073841A JP 2003073841 A JP2003073841 A JP 2003073841A JP 2001258378 A JP2001258378 A JP 2001258378A JP 2001258378 A JP2001258378 A JP 2001258378A JP 2003073841 A JP2003073841 A JP 2003073841A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- wiring conductor
- platinum group
- group element
- plated metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子や容量
素子・抵抗器等の電子部品を搭載する配線基板であっ
て、その表面の配線導体に無電解法によってめっき層を
被着させて成る配線基板およびその製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board on which electronic parts such as semiconductor elements, capacitors and resistors are mounted, and a wiring layer on the surface thereof is coated with a plating layer by an electroless method. The present invention relates to a wiring board and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】従来、半導体素子や容量素子・抵抗器等
の電子部品を搭載される配線基板は、一般に、酸化アル
ミニウム質焼結体等から成り電子部品の搭載部を有する
略四角板形状の絶縁体と、絶縁体の搭載部から外部にか
けて導出形成されたタングステン・モリブデン・マンガ
ン等の高融点金属材料から成る複数個の配線層とから構
成されており、絶縁体の搭載部に半導体素子や容量素子
・抵抗器等の電子部品を搭載するとともに電子部品の各
電極を配線層に半田やボンディングワイヤ等の導電性接
続材を介して電気的に接続するようになっている。2. Description of the Related Art Conventionally, a wiring board on which electronic parts such as semiconductor elements, capacitors and resistors are mounted is generally made of an aluminum oxide sintered body or the like and has a substantially rectangular plate shape having a mounting part for the electronic parts. It is composed of an insulator and a plurality of wiring layers made of a refractory metal material such as tungsten, molybdenum, and manganese, which is formed by being drawn out from the mounting portion of the insulator to the outside. Electronic components such as capacitors and resistors are mounted, and each electrode of the electronic components is electrically connected to a wiring layer via a conductive connecting material such as solder or bonding wire.
【０００３】このような配線基板は、配線導体の外部に
導出されている部位を外部電気回路基板の回路配線に半
田等を介し接続することによって外部電気回路基板上に
実装され、同時に配線基板に搭載されている電子部品の
各電極が所定の外部電気回路に電気的に接続されること
となる。Such a wiring board is mounted on the external electric circuit board by connecting a portion of the wiring conductor, which is led to the outside, to the circuit wiring of the external electric circuit board via solder or the like, and at the same time, is mounted on the wiring board. Each electrode of the mounted electronic component is electrically connected to a predetermined external electric circuit.
【０００４】また、このような配線基板は、配線層の表
面にニッケル・銅等のめっき金属層が被着形成され、タ
ングステン等の高融点金属材料から成る配線層に対する
半田やボンディングワイヤの濡れ性・ボンディング性等
を良好としている。In such a wiring board, a plating metal layer of nickel, copper or the like is deposited on the surface of the wiring layer, and the wettability of solder or bonding wire to the wiring layer made of a refractory metal material such as tungsten.・ Good bonding properties.
【０００５】一方、このニッケル・銅等のめっき金属層
を被着形成する方法としては、配線基板の小型化に伴う
配線導体の高密度化によってめっき電力供給用の引き出
し線の形成が困難なことから、引き出し線が不要である
無電解法が多用されつつある。On the other hand, as a method of depositing and forming a plating metal layer of nickel, copper or the like, it is difficult to form a lead wire for supplying plating power due to the high density of wiring conductors accompanying the miniaturization of wiring boards. Therefore, the electroless method, which does not require a lead wire, is being widely used.
【０００６】このような無電解法による配線導体上への
めっき金属層の被着形成は、タングステン・モリブデン
・マンガン等の高融点金属がニッケル・銅等の金属の無
電解法（自己触媒型）による還元析出に対して触媒活性
を有しないことから、通常、まず配線導体の表面にパラ
ジウム・白金等の白金族元素を被着させて触媒活性を付
与した後、配線導体を無電解めっき液中に浸漬してめっ
き金属層を被着させるという方法が採用され、一般に、
以下のようにして行なわれている。すなわち、まず、表
面に配線導体を有する絶縁基体を準備し、次に、塩化パ
ラジウム等の白金族元素の供給源となる金属化合物と塩
化鉛等の鉛化合物とを主成分とする水溶液に水酸化ナト
リウム・水酸化カリウム等のｐＨ調整剤等の添加剤を添
加して成る活性液中に配線導体を浸漬し、配線導体の表
面にパラジウム等の白金族元素を析出被着させ、次に、
硫酸ニッケル・硫酸銅等のめっき金属の供給源となる金
属化合物と、次亜リン酸ナトリウム・ジメチルアミンボ
ラン・ホルマリン等の還元剤とを主成分とする水溶液に
錯化剤・ｐＨ緩衝剤・安定剤等を添加して成る無電解め
っき液に浸漬し、配線導体表面に被着させたパラジウム
等の白金族元素の触媒活性作用によりニッケル・銅等の
金属を還元析出させることにより、配線導体の表面のみ
に選択的にめっき金属層を被着形成する。[0006] The deposition of the plated metal layer on the wiring conductor by such an electroless method is an electroless method (self-catalytic method) in which the refractory metal such as tungsten, molybdenum, manganese is a metal such as nickel, copper, etc. Since it does not have catalytic activity for reduction and precipitation by, usually, the platinum group element such as palladium and platinum is applied to the surface of the wiring conductor to give catalytic activity, and then the wiring conductor is placed in the electroless plating solution. The method of immersing in and depositing the plated metal layer is adopted, and generally,
This is done as follows. That is, first, an insulating substrate having a wiring conductor on its surface is prepared, and then an aqueous solution containing a metal compound serving as a supply source of a platinum group element such as palladium chloride and a lead compound such as lead chloride as main components is hydrated. The wiring conductor is immersed in an active liquid formed by adding an additive such as a pH adjusting agent such as sodium / potassium hydroxide, and a platinum group element such as palladium is deposited and deposited on the surface of the wiring conductor.
A complexing agent, a pH buffering agent, and a stabilizing agent in an aqueous solution containing a metal compound as a supply source of plating metal such as nickel sulfate and copper sulfate and a reducing agent such as sodium hypophosphite, dimethylamine borane and formalin as main components. Of the wiring conductor by dipping it in an electroless plating solution formed by adding an agent, etc., and reducing and precipitating a metal such as nickel or copper by the catalytic activity of the platinum group element such as palladium deposited on the surface of the wiring conductor. A plated metal layer is selectively formed only on the surface.
【０００７】なお、上記活性液中に含有される鉛化合物
は、高融点金属から成る配線導体を活性液中に浸漬した
ときに最初に配線導体の表面に吸着して配線導体の表面
を感受性化して活性化剤の析出被着を容易なものとする
感受性化剤として作用し、配線導体へのパラジウムの析
出被着を容易、かつ均一なものとしている。また、配線
導体の表面に被着されためっき金属層の内部には、配線
導体の表面に被着したパラジウム等の活性化剤と感受性
化剤である鉛とが残留し、含有されている。The lead compound contained in the active liquid is first adsorbed on the surface of the wiring conductor when the wiring conductor made of a high-melting metal is immersed in the active liquid to make the surface of the wiring conductor sensitive. It acts as a sensitizer for facilitating the deposition and deposition of the activator, and makes the deposition and deposition of palladium on the wiring conductor easy and uniform. Further, in the plated metal layer deposited on the surface of the wiring conductor, an activator such as palladium deposited on the surface of the wiring conductor and lead which is a sensitizer remain and are contained.
【０００８】[0008]
【発明が解決しようとする課題】従来の配線基板は、上
記のようにめっき金属層中に鉛が含有されることから、
ニッケル・銅等のめっき金属層に熱が加わったときに鉛
がめっき金属層の表面に移動拡散してしみ状の変色を生
じさせるという機能上の不具合や、めっき金属層中の鉛
により人体に害を及ぼすという環境・安全上の不具合を
生じてしまうという問題点があった。Since the conventional wiring board contains lead in the plated metal layer as described above,
When heat is applied to the plated metal layer of nickel, copper, etc., lead migrates to the surface of the plated metal layer and diffuses to cause stain-like discoloration, and lead in the plated metal layer causes human body damage. There is a problem that it causes environmental and safety problems that cause harm.
【０００９】また、上記問題を解決するために、活性液
中に鉛を非含有とすることが考えられるが、この場合、
高融点金属から成る配線導体の表面はパラジウム・白金
等の白金族元素の析出被着に対する感受性が不十分であ
ることから、配線導体の表面に白金族元素をムラなくか
つ強固に析出被着させることができず、その結果、めっ
き金属層にムラ・カケ・フクレ等の不具合を生じるとい
う問題点を誘発してしまう。Further, in order to solve the above problems, it is considered that lead is not contained in the active liquid. In this case,
Since the surface of the wiring conductor made of refractory metal is not sufficiently sensitive to the deposition and deposition of platinum group elements such as palladium and platinum, the platinum group element is deposited and deposited evenly and firmly on the surface of the wiring conductor. As a result, problems such as unevenness, chipping, and blistering occur on the plated metal layer.
【００１０】さらに、従来の配線基板は、配線導体とニ
ッケル・銅等のめっき金属層の界面にパラジウム・白金
等の白金族元素が層状に存在するため、鉛を含まない高
融点半田等を用いて半導体素子や容量素子・抵抗器等の
電子部品を搭載した場合、配線導体と金属層との界面に
おける熱応力が大きくなり破壊に至るという問題点があ
った。Further, in the conventional wiring board, since platinum group elements such as palladium and platinum are layered at the interface between the wiring conductor and the plated metal layer such as nickel and copper, a high melting point solder containing no lead is used. When an electronic component such as a semiconductor element, a capacitance element, or a resistor is mounted on the substrate, the thermal stress at the interface between the wiring conductor and the metal layer becomes large, resulting in destruction.
【００１１】本発明は、上記問題点を解決するために案
出されたものであり、その目的は、配線導体上に無電解
めっき金属層が均一かつ強固に被着しているとともに、
この無電解めっき金属層中に従来の感受性化剤である鉛
が含有されず、しみ状変色等の機能上の不具合を生じた
り、人体に害を及ぼしたりすることのない配線基板を提
供することにある。The present invention has been devised in order to solve the above problems, and an object thereof is that an electroless plated metal layer is uniformly and firmly deposited on a wiring conductor, and
To provide a wiring board that does not contain lead, which is a conventional sensitizer, in the electroless plated metal layer, and does not cause functional defects such as stain discoloration or harm the human body. It is in.
【００１２】[0012]
【課題を解決するための手段】本発明の配線基板は、絶
縁体に高融点金属から成る配線導体を形成するとともに
該配線導体の表面に無電解めっき金属層を被着させて成
る配線基板であって、前記無電解めっき金属層はその内
部に白金族元素を含有し、かつ鉛が非含有であるととも
に、前記白金族元素の濃度が前記無電解めっき金属層の
下部で高く上部で低いことを特徴とするものである。The wiring board of the present invention is a wiring board in which a wiring conductor made of a refractory metal is formed on an insulator and an electroless plating metal layer is adhered to the surface of the wiring conductor. There, the electroless plated metal layer contains a platinum group element inside thereof, and contains no lead, and the concentration of the platinum group element is high at the bottom of the electroless plated metal layer and low at the top. It is characterized by.
【００１３】また、本発明の配線基板は、上記構成にお
いて、前記無電解めっき金属層の最上部における前記白
金族元素の濃度が、最下部における濃度の１／50〜１／
２であることを特徴とするものである。Further, in the wiring board of the present invention having the above structure, the concentration of the platinum group element at the uppermost portion of the electroless plated metal layer is 1/50 to 1/1 / the concentration at the lowermost portion.
It is characterized by being 2.
【００１４】さらに、本発明の配線基板の製造方法は、
（１）表面に高融点金属から成る配線導体が形成された
絶縁体を準備する工程と、（２）前記配線導体を、白金
族元素とオキシカルボン酸とを主成分とする活性液中に
浸漬し、前記配線導体の表面に前記白金属元素を被着さ
せて触媒活性を付与する工程と、（３）前記白金族元素
が被着された配線導体を無電解めっき液中に浸漬し、前
記白金族元素が被着された配線導体の表面に無電解めっ
き金属層を被着させる工程と、（４）前記無電解金属層
が被着された配線導体に600℃〜1000℃の熱処理を施す
工程とからなることを特徴とするものである。Further, the method for manufacturing a wiring board of the present invention is
(1) a step of preparing an insulator on the surface of which a wiring conductor made of a refractory metal is formed; and (2) immersing the wiring conductor in an active liquid containing a platinum group element and oxycarboxylic acid as main components. Then, a step of applying the white metal element to the surface of the wiring conductor to impart catalytic activity, and (3) immersing the wiring conductor on which the platinum group element is adhered in an electroless plating solution, A step of depositing an electroless plated metal layer on the surface of the wiring conductor coated with the platinum group element, and (4) subjecting the wiring conductor coated with the electroless metal layer to a heat treatment at 600 ° C. to 1000 ° C. It is characterized by comprising steps.
【００１５】本発明の配線基板によれば、配線導体に被
着させた無電解めっき金属層の内部に、無電解めっき金
属層を被着させるのに必要な白金族元素は含有される
が、鉛は非含有であることから、白金族元素の作用によ
り配線導体に良好な触媒活性が付与されて配線導体にの
み無電解めっき金属層を均一に被着させることができ、
かつ、鉛が無電解めっき金属層中に含有されることに起
因する無電解めっき金属層のしみ状変色や人体に対する
害という問題の発生を有効に防止することができる。According to the wiring board of the present invention, the platinum group element necessary for depositing the electroless plating metal layer is contained inside the electroless plating metal layer deposited on the wiring conductor. Since lead is not contained, good catalytic activity is given to the wiring conductor by the action of the platinum group element, and the electroless plated metal layer can be uniformly deposited only on the wiring conductor,
In addition, it is possible to effectively prevent the problem of stain-like discoloration of the electroless plated metal layer and damage to the human body due to the lead being contained in the electroless plated metal layer.
【００１６】また、従来は配線導体と無電解めっき金属
層との界面に層状に存在していた白金族元素の濃度を、
無電解めっき金属層の下部で高く上部で低くしたことか
ら、配線導体と無電解めっき金属層との間に白金族元素
の層が無くなることにより、熱応力による白金族元素層
を起点とする配線導体と無電解めっき金属層との剥離を
有効に防止することができる。Further, the concentration of the platinum group element, which was conventionally present in the form of a layer at the interface between the wiring conductor and the electroless plated metal layer,
Since the lower part of the electroless plated metal layer is higher and the lower part of the electroless plated metal layer is lower, the platinum group element layer is eliminated between the wiring conductor and the electroless plated metal layer. It is possible to effectively prevent peeling between the conductor and the electroless plated metal layer.
【００１７】さらに、無電解めっき金属層の最上部にお
ける白金族元素の濃度が、下部における濃度の１／50〜
１／２になるようにしたときには、白金族元素層が金属
層内に十分に拡散し、配線導体と無電解めっき金属層と
の界面の熱応力を無電解めっき金属層内に均一に分散さ
せることができ、配線導体と無電解めっき金属層との剥
離を有効に防止することができる。Further, the concentration of the platinum group element in the uppermost part of the electroless plated metal layer is 1/50 of the concentration in the lower part.
When it is reduced to 1/2, the platinum group element layer is sufficiently diffused in the metal layer, and the thermal stress at the interface between the wiring conductor and the electroless plated metal layer is uniformly dispersed in the electroless plated metal layer. Therefore, the peeling between the wiring conductor and the electroless plated metal layer can be effectively prevented.
【００１８】[0018]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.
【００１９】図１は、本発明の配線基板を半導体素子を
収容する半導体素子収納用パッケージに適用した場合の
実施の形態の一例を示す断面図であり、１は絶縁体、２
は配線導体である。この絶縁体１と配線導体２とで半導
体素子３を搭載するための配線基板４が形成される。FIG. 1 is a sectional view showing an example of an embodiment in which a wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element.
Is a wiring conductor. A wiring board 4 for mounting the semiconductor element 3 is formed by the insulator 1 and the wiring conductor 2.
【００２０】絶縁体１は、酸化アルミニウム質焼結体・
ムライト質焼結体・窒化アルミニウム質焼結体・炭化珪
素質焼結体等の電気絶縁材料から成り、その上面に半導
体素子３を搭載する搭載部を有し、この半導体素子３が
搭載される搭載部から下面にかけてタングステン・モリ
ブデン・マンガン等の高融点金属から成る多数の配線導
体２が被着形成されている。The insulator 1 is an aluminum oxide sintered body.
It is made of an electrically insulating material such as a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body, and has a mounting portion on which the semiconductor element 3 is mounted, and the semiconductor element 3 is mounted. A large number of wiring conductors 2 made of a high melting point metal such as tungsten, molybdenum, manganese, etc. are adhered and formed from the mounting portion to the lower surface.
【００２１】絶縁体１は搭載部に半導体素子３が搭載さ
れるとともに、半導体素子３の各電極は搭載部に露出し
ている配線導体２に半田ボール５を介して電気的に接続
され、また配線導体２の絶縁体１の下面に導出されてい
る部位は外部電気回路基板の回路配線に半田等を介して
電気的に接続される。The semiconductor element 3 is mounted on the mounting portion of the insulator 1, and each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 exposed on the mounting portion via the solder ball 5. The portion of the wiring conductor 2 which is led out to the lower surface of the insulator 1 is electrically connected to the circuit wiring of the external electric circuit board via solder or the like.
【００２２】配線導体２は、図２に断面図で示すよう
に、その表面に無電解法によりめっき金属層６が被着さ
れている。As shown in the sectional view of FIG. 2, the wiring conductor 2 has a plated metal layer 6 deposited on its surface by an electroless method.
【００２３】めっき金属層６は、配線導体２に対する半
田の濡れ性・接合強度・ボンディング性を良好なものと
する作用をなし、ニッケルの含有率が99.9重量％以上で
ある高純度ニッケル・ニッケル−リン合金・ニッケル−
ホウ素合金・銅・銅を主成分とする合金等から成る。こ
れらめっき金属層６は、その厚さが１μｍ未満であると
配線導体２を被覆する効果が弱く、また20μｍを超える
とめっき金属層６自体の応力が大きくなり配線導体２と
の密着性が劣化する傾向にある。従って、めっき金属層
６は、その厚さを１〜20μｍの範囲としておくことが好
ましい。The plated metal layer 6 has the function of improving the wettability, the bonding strength and the bondability of the solder with respect to the wiring conductor 2, and the nickel content is 99.9% by weight or more. Phosphorus alloy / nickel
Consists of boron alloy, copper, alloys containing copper as the main component, etc. If the thickness of the plated metal layer 6 is less than 1 μm, the effect of covering the wiring conductor 2 is weak, and if it exceeds 20 μm, the stress of the plated metal layer 6 itself increases and the adhesion with the wiring conductor 2 deteriorates. Tend to do. Therefore, the plated metal layer 6 preferably has a thickness within the range of 1 to 20 μm.
【００２４】本発明においては、めっき金属層６の内部
に白金族元素を含有し、かつ鉛が非含有であるととも
に、白金族元素の濃度がめっき金属層６の下部で高く上
部で低いことが重要である。In the present invention, the plated metal layer 6 contains a platinum group element and does not contain lead, and the concentration of the platinum group element is high in the lower part of the plated metal layer 6 and low in the upper part. is important.
【００２５】これは、ニッケル−ホウ素めっき層等のめ
っき金属層６に含有する鉛が熱等によりめっき金属層６
の表面に移動拡散してしみ状変色を生じたり、人体に害
を及ぼしたりすることを防止するためである。この場
合、パラジウム・白金等の白金族元素は無電解法でめっ
き金属層６を配線導体２上に被着させるために必要な触
媒付与の機能を有し、配線導体２の表面に析出被着され
るとともにめっき金属層６中に残留して含有されるが、
白金族元素は鉛に比べて酸化しにくく、また毒性も極め
て小さいことから、めっき金属層６の表面に移動拡散し
てしみ状変色を生じたり、人体に害を及ぼしたりするよ
うなことはない。This is because the lead contained in the plated metal layer 6 such as the nickel-boron plated layer is heated by the plated metal layer 6 or the like.
This is to prevent it from migrating and diffusing on the surface of the to cause stain-like discoloration or harming the human body. In this case, a platinum group element such as palladium or platinum has a function of applying a catalyst necessary for depositing the plated metal layer 6 on the wiring conductor 2 by an electroless method, and deposits and deposits on the surface of the wiring conductor 2. Is contained and remains in the plated metal layer 6,
Since platinum group elements are less likely to be oxidized than lead and have extremely low toxicity, they do not migrate and diffuse to the surface of the plated metal layer 6 to cause stain discoloration or harm to the human body. .
【００２６】さらに、白金族元素の濃度がめっき金属層
６の下部で高く上部で低いため、配線導体２とめっき金
属層６との界面にかかる熱応力がめっき金属層６内に均
一に分散することにより、配線導体２とめっき金属層６
との剥離を有効に防止することができる。なおこの場
合、めっき金属層６の厚みの１／２より上部をめっき金
属層６の上部、１／２より下部をめっき金属層６の下部
としている。Furthermore, since the concentration of the platinum group element is high in the lower part of the plated metal layer 6 and low in the upper part, the thermal stress applied to the interface between the wiring conductor 2 and the plated metal layer 6 is uniformly dispersed in the plated metal layer 6. As a result, the wiring conductor 2 and the plated metal layer 6
It is possible to effectively prevent the peeling from. In this case, the upper half of the thickness of the plated metal layer 6 is the upper part of the plated metal layer 6, and the lower half is the lower part of the plated metal layer 6.
【００２７】また、この濃度勾配はめっき金属層６の最
上部に含まれる白金族元素濃度が最下部に含まれる濃度
の１／50〜１／２であることが望ましい。めっき金属層
６の最上部での白金族元素の濃度が最下部の濃度の１／
50未満となると、白金族元素の拡散が不十分となり配線
導体２とめっき金属層６とが剥離し易くなる傾向があ
る。他方、１／２を超えると、鉛を含まない高融点半田
等を用いて半導体素子や容量素子・抵抗器等の電子部品
を搭載した場合の半田接合強度が劣化する傾向がある。
なお、濃度勾配の測定方法としては、ＡＥＳ（オージェ
電子分光分析）やＥＰＭＡ（波長分散型Ｘ線マイクロア
ナライザー分析）等によりめっき金属層６の断面部分を
分析することが有効である。The concentration gradient is preferably such that the concentration of the platinum group element contained in the uppermost part of the plated metal layer 6 is 1/50 to 1/2 of the concentration contained in the lowermost part. The concentration of the platinum group element at the uppermost part of the plated metal layer 6 is 1 / the lowermost concentration.
When it is less than 50, the diffusion of the platinum group element becomes insufficient and the wiring conductor 2 and the plated metal layer 6 tend to be easily separated. On the other hand, if it exceeds 1/2, the solder joint strength tends to deteriorate when electronic components such as semiconductor elements, capacitors and resistors are mounted using lead-free high melting point solder or the like.
As a method of measuring the concentration gradient, it is effective to analyze the cross-section of the plated metal layer 6 by AES (Auger electron spectroscopy analysis), EPMA (wavelength dispersive X-ray microanalyzer analysis), or the like.
【００２８】また、白金族元素としては、パラジウムま
たは白金、特にパラジウムが好ましく、高融点金属から
成る配線導体２の表面に良好に被着するとともに、ニッ
ケル・銅等の金属の無電解法による被着形成に対して良
好な触媒活性を付与することができる。As the platinum group element, palladium or platinum, particularly palladium, is preferable, and it adheres well to the surface of the wiring conductor 2 made of a refractory metal, and a metal such as nickel or copper is coated by an electroless method. Good catalytic activity can be imparted to the formation of deposits.
【００２９】さらに、配線基板４は、ニッケルの含有率
が99.9重量％以上である純ニッケル・ニッケル−リン合
金・ニッケルホウ素合金・銅・銅を主成分とする合金等
から成るめっき金属層６の表面を金めっき層（非図示）
で被覆するようにしておくと、めっき金属層６の酸化腐
食を効果的に防止することができるとともに、配線導体
２に対する半田の濡れ性をより一層良好なものとするこ
とができる。従って、配線基板４は、めっき金属層６の
表面をさらに金めっき層で被覆するようにしておくこと
が好ましい。この場合、金めっき層は、その厚さが0.03
μｍ未満ではめっき金属層を被覆する効果が弱く、また
0.8μｍを超えると半田中の錫と金との間で脆い金属間
化合物が大量に生成し、半田の接合強度が劣化する傾向
にある。従って、金めっき層は、その厚さを0.03μｍ〜
0.8μｍの範囲としておくことが好ましい。Further, the wiring board 4 has a plated metal layer 6 made of pure nickel / nickel-phosphorus alloy / nickel-boron alloy / copper / alloy containing copper as a main component having a nickel content of 99.9% by weight or more. Gold plating layer on the surface (not shown)
By coating with, the oxidative corrosion of the plated metal layer 6 can be effectively prevented, and the wettability of the solder to the wiring conductor 2 can be further improved. Therefore, in the wiring board 4, it is preferable that the surface of the plated metal layer 6 is further covered with a gold plating layer. In this case, the gold plating layer has a thickness of 0.03
If it is less than μm, the effect of covering the plated metal layer is weak, and
If it exceeds 0.8 μm, a large amount of brittle intermetallic compound is generated between tin and gold in the solder, and the solder bonding strength tends to deteriorate. Therefore, the gold plating layer has a thickness of 0.03 μm
The range is preferably 0.8 μm.
【００３０】かくして本発明の配線基板によれば、絶縁
体１の搭載部に半導体素子３を搭載するとともに半導体
素子３の各電極を配線層２に半田ボール５を介して電気
的に接続し、しかる後、絶縁体１の上面に金属やセラミ
ックスから成る椀状の蓋体９をガラスや樹脂・ロウ材等
の封止材を介して接合させ、絶縁体１と蓋体７とから成
る容器内部に半導体素子３を気密に収容することによっ
て、製品としての半導体装置が完成する。Thus, according to the wiring board of the present invention, the semiconductor element 3 is mounted on the mounting portion of the insulator 1, and each electrode of the semiconductor element 3 is electrically connected to the wiring layer 2 via the solder ball 5. After that, a bowl-shaped lid 9 made of metal or ceramics is bonded to the upper surface of the insulator 1 via a sealing material such as glass, resin, or brazing material, and the inside of the container composed of the insulator 1 and the lid 7 is joined. A semiconductor device as a product is completed by hermetically housing the semiconductor element 3 therein.
【００３１】次に、上述の配線基板の製造方法について
図３（ａ）〜（ｄ）に基づいて説明する。なお、図１お
よび図２と同一箇所には同一符号が付してある。Next, a method of manufacturing the above wiring board will be described with reference to FIGS. The same parts as those in FIGS. 1 and 2 are designated by the same reference numerals.
【００３２】まず、図３（ａ）に示す、表面に高融点金
属から成る配線導体２を設けた絶縁体１を準備する。First, as shown in FIG. 3A, an insulator 1 having a wiring conductor 2 made of a refractory metal on the surface thereof is prepared.
【００３３】絶縁体１は、酸化アルミニウム質焼結体・
窒化アルミニウム質焼結体・ムライト質焼結体・炭化珪
素質焼結体等の電気絶縁材料から成る略四角板であり、
その上面に半導体素子を搭載するための搭載部を有し、
この搭載部に半導体素子が搭載される。The insulator 1 is an aluminum oxide sintered body.
A substantially rectangular plate made of an electrically insulating material such as an aluminum nitride sintered body, a mullite sintered body, and a silicon carbide sintered body.
Having a mounting portion for mounting a semiconductor element on its upper surface,
A semiconductor element is mounted on this mounting portion.
【００３４】絶縁体１は、例えば、酸化アルミニウム質
焼結体から成る場合には、酸化アルミニウム・酸化珪素
・酸化カルシウム・酸化マグネシウム等の原料粉末に適
当な有機バインダ・溶剤を添加混合して泥漿状セラミッ
クスラリーと成すとともにこのセラミックスラリーを従
来周知のドクターブレード法やカレンダーロール法等の
シート形成技術を採用しシート状と成すことによってセ
ラミックグリーンシート（セラミック生シート）を得
て、しかる後、このセラミックグリーンシートを切断加
工や打ち抜き加工により適当な形状とするとともにこれ
を複数枚積層し、最後にこの積層されたセラミックグリ
ーンシートを還元雰囲気中、約1600℃の温度で焼成する
ことによって製作される。When the insulator 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder / solvent is added to and mixed with a raw material powder of aluminum oxide / silicon oxide / calcium oxide / magnesium oxide. A ceramic green sheet (ceramic green sheet) is obtained by forming the ceramic slurry into a sheet shape by adopting a conventionally known sheet forming technique such as a doctor blade method or a calendar roll method. It is made by cutting and punching ceramic green sheets into appropriate shapes, stacking multiple ceramic green sheets, and finally firing the stacked ceramic green sheets in a reducing atmosphere at a temperature of approximately 1600 ° C. .
【００３５】配線導体２は、タングステン・モリブデン
・マンガン等の高融点金属材料から成り、タングステン
等の高融点金属粉末に適当な有機バインダや溶剤を添加
混合して得た金属ペーストを絶縁体１となるセラミック
グリーンシートに予め従来周知のスクリーン印刷法によ
り所定パターンに印刷塗布しておくことによって、絶縁
体１の搭載部から下面にかけて被着形成される。The wiring conductor 2 is made of a refractory metal material such as tungsten, molybdenum or manganese, and a metal paste obtained by adding and mixing an appropriate organic binder or solvent to refractory metal powder such as tungsten is used as the insulator 1. By previously printing and applying a predetermined pattern to the ceramic green sheet by a conventionally known screen printing method, the ceramic green sheet is adhered and formed from the mounting portion of the insulator 1 to the lower surface.
【００３６】次に、配線導体２を、パラジウム・白金・
ロジウム・ルテニウム・イリジウムから構成される白金
族元素の少なくとも１種とクエン酸・リンゴ酸等のオキ
シカルボン酸の少なくとも１種とを主成分とする活性液
中に浸漬し、図３（ｂ）に示す如く、配線導体２の表面
に白金族元素８を被着させて触媒活性を付与する。ただ
し、図中、白金族元素８は説明のため実際のスケールよ
りも誇張して図示している。Next, the wiring conductor 2 is replaced with palladium / platinum /
It is dipped in an active liquid containing at least one platinum group element composed of rhodium, ruthenium, and iridium and at least one oxycarboxylic acid such as citric acid and malic acid as main components, and as shown in FIG. As shown, the platinum group element 8 is deposited on the surface of the wiring conductor 2 to impart catalytic activity. However, in the figure, the platinum group element 8 is exaggerated from the actual scale for the sake of explanation.
【００３７】前記活性液において、白金族元素は配線導
体２の表面に被着することにより配線導体２の表面に触
媒活性を付与する作用をなし、後の工程でめっき金属層
６を配線導体２の表面に選択的に均一に被着させること
を可能としている。In the active liquid, the platinum group element has a function of imparting catalytic activity to the surface of the wiring conductor 2 by being deposited on the surface of the wiring conductor 2, and the plated metal layer 6 is formed on the wiring conductor 2 in a later step. It is possible to selectively and evenly adhere to the surface of.
【００３８】またオキシカルボン酸は、活性液中に鉛を
含有させることなく配線導体２の表面に白金族元素８を
被着させることを可能とする、という重要な作用を有し
ている。すなわち、クエン酸等のオキシカルボン酸は、
タングステン等の高融点金属から成る配線導体２の表面
に作用し、配線導体２の表面部分の高融点金属を酸化・
錯体化して活性液中に溶出させるとともに、その溶出跡
にタングステン等と置換するようにして白金族元素を析
出させる作用をなす。これは、このクエン酸等の有機酸
の金属に対する錯体の安定度が白金族元素等の活性化剤
に対する場合よりもタングステン等の高融点金属に対す
る場合の方が大きいためであると推定される。そして、
このようにオキシカルボン酸を活性液中に添加しておく
ことにより、活性液中に感受性化剤として鉛を添加する
ことなく、配線導体２の表面に白金族元素８を容易、か
つ均一に被着させることが可能となる。The oxycarboxylic acid also has an important function of making it possible to deposit the platinum group element 8 on the surface of the wiring conductor 2 without containing lead in the active liquid. That is, an oxycarboxylic acid such as citric acid is
It acts on the surface of the wiring conductor 2 made of a refractory metal such as tungsten and oxidizes the refractory metal on the surface portion of the wiring conductor 2.
It has the function of forming a complex and eluting it into the active liquid, and substituting the elution trace with tungsten or the like to precipitate the platinum group element. It is presumed that this is because the stability of the complex with respect to the metal of the organic acid such as citric acid is higher for the refractory metal such as tungsten than for the activator such as the platinum group element. And
By thus adding the oxycarboxylic acid to the active liquid, the platinum group element 8 can be easily and uniformly coated on the surface of the wiring conductor 2 without adding lead as a sensitizer to the active liquid. It is possible to wear it.
【００３９】前記活性液は、例えば白金族元素８として
パラジウムを用いる場合であれば、塩化パラジウム・硫
酸パラジウム等のパラジウム化合物と、クエン酸・リン
ゴ酸等のオキシカルボン酸（ヒドロキシ基を有するカル
ボン酸）とを主成分とする水溶液に、塩酸・硼弗化水素
酸・水酸化ナトリウム・水酸化カリウム・水酸化リチウ
ム等のｐＨ調整剤等の添加剤を添加したものを用いるこ
とができる。なお、活性液中の白金族元素濃度は、高濃
度になると白金族元素８の偏析等の不具合を誘発するお
それがあることから、約20〜180ｐｐｍ程度としておく
ことが好ましい。When palladium is used as the platinum group element 8, for example, the active liquid is a palladium compound such as palladium chloride or palladium sulfate, and an oxycarboxylic acid such as citric acid or malic acid (carboxylic acid having a hydroxy group). ) And an aqueous solution containing as a main component, an additive such as a pH adjuster such as hydrochloric acid, hydrofluoric acid, sodium hydroxide, potassium hydroxide, lithium hydroxide, etc. can be used. The platinum group element concentration in the active liquid is preferably set to about 20 to 180 ppm because a high concentration may induce a problem such as segregation of the platinum group element 8.
【００４０】そして次に、配線導体２を無電解めっき液
中に浸漬し、白金族元素８を触媒として、配線導体２の
表面に無電解法にてめっき金属層６を析出・被着させ
る。Then, the wiring conductor 2 is dipped in an electroless plating solution to deposit and deposit a plating metal layer 6 on the surface of the wiring conductor 2 by an electroless method using the platinum group element 8 as a catalyst.
【００４１】めっき金属層６は、ニッケルの含有率が9
9.9重量％以上である純ニッケル・ニッケル−リン合金
・ニッケル−ホウ素合金・銅・銅を主成分とする合金等
からなり、配線導体２に対する半田の濡れ性・ボンディ
ング性等を良好なものとする作用をなす。The plated metal layer 6 has a nickel content of 9
Made of pure nickel, nickel-phosphorus alloy, nickel-boron alloy, copper, copper-based alloy, etc., which is 9.9% by weight or more, and has good solder wettability and bondability to the wiring conductor 2. Act.
【００４２】無電解めっき液は、例えば、めっき金属層
６がニッケル−ホウ素合金からなる場合であれば、硫酸
ニッケル等のニッケル供給源となるニッケル化合物と、
ジメチルアミンボラン等のホウ素系の還元剤とを主成分
とし、錯化剤・安定剤・ｐＨ緩衝剤等を添加して成る無
電解ニッケルめっき液を用いることができる。この場
合、無電解ニッケルめっき液中のニッケル（イオン）
は、配線導体２の表面に予め被着させた白金族元素８の
触媒作用で還元剤が酸化分解されるのに伴って金属ニッ
ケルに還元され、還元剤の分解に伴って生じるホウ素と
ともに配線導体２の表面に共析被着して、図３（ｃ）に
示す如く、ニッケル−ホウ素合金から成るめっき金属層
６を形成する。なお、一旦、配線導体２の表面にニッケ
ル（ニッケル−ホウ素合金）が被着し始めると、この被
着したニッケル自身が後続のニッケルの還元剤による還
元・析出に対して触媒活性を有することから、めっき液
中に触媒である白金族元素が露出・接触していなくて
も、ニッケルの還元析出・被着する反応を継続して行な
わせることができる。The electroless plating solution is, for example, when the plating metal layer 6 is made of a nickel-boron alloy, a nickel compound such as nickel sulfate serving as a nickel supply source,
An electroless nickel plating solution containing a boron-based reducing agent such as dimethylamine borane as a main component and adding a complexing agent, a stabilizer, a pH buffering agent and the like can be used. In this case, nickel (ion) in electroless nickel plating solution
Is a metallic conductor that is reduced to metallic nickel as the reducing agent is oxidatively decomposed by the catalytic action of the platinum group element 8 deposited on the surface of the wiring conductor 2 together with boron generated by the decomposition of the reducing agent. By eutectoid deposition on the surface of No. 2, a plated metal layer 6 made of nickel-boron alloy is formed as shown in FIG. Note that once nickel (nickel-boron alloy) begins to deposit on the surface of the wiring conductor 2, the deposited nickel itself has catalytic activity for subsequent reduction / precipitation of nickel with a reducing agent. Even if the platinum group element, which is the catalyst, is not exposed or in contact with the plating solution, the reaction of reducing precipitation / deposition of nickel can be continuously performed.
【００４３】次に、以上のようにして得られた配線基板
を還元雰囲気中もしくは窒素雰囲気中、約600℃〜1000
℃の温度で熱処理することにより、図３（ｄ）に示す如
く、めっき金属層６内の白金族元素に濃度勾配を持たせ
ることができる。この熱処理の温度が600℃以下である
と、金属層６の厚さが厚い場合に、めっき金属層６の最
上部における前記白金族元素の濃度が最下部における濃
度の１／50以下となるため、白金族元素の拡散が不十分
となり、前述のように配線導体２とめっき金属層６とが
剥離する危険がある。また、熱処理の温度が1000℃以上
であると、金属層６の厚さが薄い場合に、めっき金属層
６の最上部における白金族元素濃度が最下部における濃
度の１／２を超えてしまい、前述のように実装時に不具
合が生じることがある。Next, the wiring board obtained as described above is heated in a reducing atmosphere or a nitrogen atmosphere at about 600.degree.
By heat treatment at a temperature of ° C, the platinum group element in the plated metal layer 6 can have a concentration gradient as shown in Fig. 3D. If the temperature of this heat treatment is 600 ° C. or lower, the concentration of the platinum group element in the uppermost portion of the plated metal layer 6 becomes 1/50 or less of the concentration in the lowermost portion when the metal layer 6 is thick. However, the diffusion of the platinum group element becomes insufficient, and there is a risk that the wiring conductor 2 and the plated metal layer 6 are separated from each other as described above. Further, when the temperature of the heat treatment is 1000 ° C. or higher, when the thickness of the metal layer 6 is thin, the platinum group element concentration in the uppermost portion of the plated metal layer 6 exceeds half the concentration in the lowermost portion, As described above, a problem may occur during mounting.
【００４４】また、めっき金属層６の表面に金めっき層
（非図示）を被着させる場合には、めっき金属層６を被
着させた配線導体２を、シアン化金カリウム等の金化合
物と、エチレンジアミン四酢酸（ＥＤＴＡ）等の錯化剤
とを主成分とする置換型の無電解金めっき液中に所定時
間浸漬する方法を用いることができる。When a gold plating layer (not shown) is deposited on the surface of the plated metal layer 6, the wiring conductor 2 coated with the plated metal layer 6 is treated with a gold compound such as potassium gold cyanide. Alternatively, a method of immersing in a substitution type electroless gold plating solution containing a complexing agent such as ethylenediaminetetraacetic acid (EDTA) as a main component for a predetermined time can be used.
【００４５】なお、本発明の配線基板は上述の実施の形
態の例に限定されるものではなく、本発明の要旨を逸脱
しない範囲であれば種々の変更は可能である。例えば、
上述の例では本発明の配線基板を半導体素子を収容する
半導体素子収納用パッケージに適用したが、混成集積回
路基板等の他の用途に適用しても良い。The wiring board of the present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. For example,
In the above-mentioned example, the wiring board of the present invention is applied to the semiconductor element housing package for housing the semiconductor element, but it may be applied to other applications such as a hybrid integrated circuit board.
【００４６】[0046]
【発明の効果】本発明の配線基板によれば、配線導体に
被着させた無電解めっき金属層の内部に、無電解めっき
金属層を被着させるのに必要な白金族元素は含有される
が、鉛は非含有であることから、白金族元素の作用によ
り配線導体に良好な触媒活性が付与されて配線導体にの
み無電解めっき金属層を均一に被着させることができ、
かつ、鉛がめっき金属層中に含有されることに起因する
無電解めっき金属層のしみ状変色や人体に対する害とい
う問題の発生を有効に防止することができる。According to the wiring board of the present invention, the platinum group element necessary for depositing the electroless plated metal layer is contained inside the electroless plated metal layer deposited on the wiring conductor. However, since lead is not contained, good catalytic activity is imparted to the wiring conductor by the action of the platinum group element, and the electroless plated metal layer can be uniformly deposited only on the wiring conductor,
In addition, it is possible to effectively prevent the occurrence of problems such as the stain-like discoloration of the electroless plated metal layer and the damage to the human body due to the inclusion of lead in the plated metal layer.
【００４７】また、従来は配線導体と無電解めっき金属
層との界面に層状に存在していた白金族元素の濃度を、
無電解めっき金属層の下部で高く上部で低くしたことか
ら、配線導体と無電解めっき金属層との間に白金族元素
の層が無くなることにより、熱応力による白金族元素層
を起点とする配線導体と無電解めっき金属層との剥離を
有効に防止することができる。Further, the concentration of the platinum group element, which was conventionally present in the form of a layer at the interface between the wiring conductor and the electroless plated metal layer,
Since the lower part of the electroless plated metal layer is higher and the lower part of the electroless plated metal layer is lower, the platinum group element layer is eliminated between the wiring conductor and the electroless plated metal layer. It is possible to effectively prevent peeling between the conductor and the electroless plated metal layer.
【００４８】さらに、無電解めっき金属層の最上部にお
ける白金族元素の濃度が、下部における濃度の１／50〜
１／２になるようにしたときには、白金族元素層が金属
層内に十分に拡散し、配線導体と無電解めっき金属層と
の界面の熱応力を無電解めっき金属層内に均一に分散さ
せることができ、配線導体とめっき金属層との剥離を有
効に防止することができる。Furthermore, the concentration of the platinum group element in the uppermost part of the electroless plated metal layer is 1/50 of that in the lower part.
When it is reduced to 1/2, the platinum group element layer is sufficiently diffused in the metal layer, and the thermal stress at the interface between the wiring conductor and the electroless plated metal layer is uniformly dispersed in the electroless plated metal layer. Therefore, the peeling between the wiring conductor and the plated metal layer can be effectively prevented.
【図１】本発明の配線基板の実施の形態の一例を示す断
面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a wiring board of the present invention.
【図２】図１に示す配線基板の要部拡大図である。FIG. 2 is an enlarged view of a main part of the wiring board shown in FIG.
【図３】（ａ）〜（ｄ）は、それぞれ図１に示す配線基
板の製造方法を説明するための各工程毎の要部拡大断面
図である。3A to 3D are enlarged cross-sectional views of a main part of each step for explaining the method for manufacturing the wiring board shown in FIG.
１・・・・絶縁体 ２・・・・配線導体 ３・・・・半導体素子 ４・・・・配線基板 ５・・・・半田ボール ６・・・・めっき金属層 ７・・・・蓋体 ８・・・・白金族元素 1 ... Insulator 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Wiring board 5 ... Solder balls 6 ... Plating metal layer 7 ... Lid 8 ... Platinum group element
Claims (3)
成するとともに該配線導体の表面に無電解めっき金属層
を被着させて成る配線基板であって、前記無電解めっき
金属層はその内部に白金族元素を含有し、かつ鉛が非含
有であるとともに、前記白金族元素の濃度が前記無電解
めっき金属層の下部で高く上部で低いことを特徴とする
配線基板。1. A wiring board comprising a wiring conductor made of a refractory metal formed on an insulator and an electroless plating metal layer deposited on the surface of the wiring conductor, wherein the electroless plating metal layer is formed of the wiring conductor. A wiring board containing a platinum group element therein and containing no lead therein, and having a concentration of the platinum group element higher in a lower portion of the electroless plated metal layer and lower in an upper portion thereof.
前記白金族元素の濃度が、最下部における濃度の１／50
〜１／２であることを特徴とする請求項１記載の配線基
板。2. The concentration of the platinum group element at the uppermost portion of the electroless plated metal layer is 1/50 of the concentration at the lowermost portion.
The wiring board according to claim 1, wherein the wiring board has a thickness of about 1/2.
が形成された絶縁体を準備する工程と、（２）前記配線
導体を、白金族元素とオキシカルボン酸とを主成分とす
る活性液中に浸漬し、前記配線導体の表面に前記白金族
元素を被着させて触媒活性を付与する工程と、（３）前
記白金族元素が被着された配線導体を無電解めっき液中
に浸漬し、前記白金族元素が被着された配線導体の表面
に無電解めっき金属層を被着させる工程と、（４）前記
無電解金属層が被着された配線導体に600℃〜1000℃の
熱処理を施す工程とからなることを特徴とする配線基板
の製造方法。3. A step of (1) preparing an insulator having a wiring conductor made of a refractory metal formed on a surface thereof, and (2) the wiring conductor containing a platinum group element and an oxycarboxylic acid as main components. A step of immersing the wiring conductor in the active liquid to apply the platinum group element to the surface of the wiring conductor to impart catalytic activity, and (3) a wiring conductor coated with the platinum group element in an electroless plating solution. The step of immersing the wiring conductor in which the electroless metal layer is deposited on the surface of the wiring conductor coated with the platinum group element, and (4) the wiring conductor coated with the electroless metal layer at 600 ° C. to 1000 ° C. A method of manufacturing a wiring board, which comprises a step of performing a heat treatment at ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001258378A JP2003073841A (en) | 2001-08-28 | 2001-08-28 | Wiring board and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001258378A JP2003073841A (en) | 2001-08-28 | 2001-08-28 | Wiring board and manufacturing method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003073841A true JP2003073841A (en) | 2003-03-12 |
Family
ID=19085913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001258378A Pending JP2003073841A (en) | 2001-08-28 | 2001-08-28 | Wiring board and manufacturing method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003073841A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02104671A (en) * | 1988-10-11 | 1990-04-17 | C Uyemura & Co Ltd | Palladium activator and method for electroless-plating ceramic substrate |
| JPH0661622A (en) * | 1992-08-05 | 1994-03-04 | Hitachi Ltd | Plating method for ceramic board |
| JPH06220607A (en) * | 1992-09-05 | 1994-08-09 | Rolls Royce Plc | High temperature corrosion resisting composite coating |
| JPH10147885A (en) * | 1996-11-20 | 1998-06-02 | Hitachi Ltd | Electroless nickel/gold plating method and ceramic wiring substrate manufactured therewith |
| JPH11124680A (en) * | 1997-10-21 | 1999-05-11 | Ebara Udylite Kk | Catalytic solution for electroless plating |
| JP2000323609A (en) * | 1999-05-12 | 2000-11-24 | Hitachi Ltd | Ceramic substrate and its plating method |
-
2001
- 2001-08-28 JP JP2001258378A patent/JP2003073841A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02104671A (en) * | 1988-10-11 | 1990-04-17 | C Uyemura & Co Ltd | Palladium activator and method for electroless-plating ceramic substrate |
| JPH0661622A (en) * | 1992-08-05 | 1994-03-04 | Hitachi Ltd | Plating method for ceramic board |
| JPH06220607A (en) * | 1992-09-05 | 1994-08-09 | Rolls Royce Plc | High temperature corrosion resisting composite coating |
| JPH10147885A (en) * | 1996-11-20 | 1998-06-02 | Hitachi Ltd | Electroless nickel/gold plating method and ceramic wiring substrate manufactured therewith |
| JPH11124680A (en) * | 1997-10-21 | 1999-05-11 | Ebara Udylite Kk | Catalytic solution for electroless plating |
| JP2000323609A (en) * | 1999-05-12 | 2000-11-24 | Hitachi Ltd | Ceramic substrate and its plating method |
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