JP2001500613A - 半導体のミクロ欠陥検出装置とその方法 - Google Patents
半導体のミクロ欠陥検出装置とその方法Info
- Publication number
- JP2001500613A JP2001500613A JP10513344A JP51334498A JP2001500613A JP 2001500613 A JP2001500613 A JP 2001500613A JP 10513344 A JP10513344 A JP 10513344A JP 51334498 A JP51334498 A JP 51334498A JP 2001500613 A JP2001500613 A JP 2001500613A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- defects
- silicon structure
- silicon
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 半導体あるいはシリコン構造を0.1mm−0.5ミクロンの間のスポ ットの大きさで104〜109watt/cm2間のピークまたは平均電力の少な くとも一つの高い光強度のビームに露出し、半導体あるいはシリコン構造の欠陥 を観察するためにそこからルミネセンスを収集することを特徴とする半導体ある いはシリコン構造中の欠陥を特定する方法。 2. 前記半導体あるいはシリコン構造中の選択された深さでの欠陥を特定す るために前記光の波長を選択するステップを有することを特徴とする請求項1に 記載の方法。 3. 前記半導体あるいはシリコン構造をパルス状の光ビームに露光するステ ップを有することを特徴とする請求項1または2に記載の方法。 4. 一連の焦点面からルミネセンスを収集するステップを有することを特徴 とする請求項1ないし3のいずれかに記載の方法。 5. 0.1mmと0.5ミクロンの間のスポットの大きさ、および/または 104〜109watt/cm2間の電力を有する光ビームを作り出す少なくとも 一つの高強度光発生手段と、 半導体あるいはシリコンウェファーからルミネセンスを収集する手段と、 存在するいかなる欠陥をも調べるために前記半導体あるいはシリコン構造の像 を作り出す手段 を有することを特徴とする半導体あるいはシリコン構造の光ルミネセンス作像 を行う装置。 6. 前記光発生手段は前記光ビームの波長がそれによって選択される変調手 段を備えていることを特徴とする請求項5に記載の装置。 7. 前記光発生手段は前記光ビームの強度がそれによって選択される変調手 段を備えていることを特徴とする請求項5または6に記載の装置。 8. パルス状光ビームが作り出される手段が備えられていることを特徴とす る請求項5〜7のいずれかに記載の装置。 9. 前記光発生手段は前記光ビームの周波数がそれによって選択される変調 手段を備えていることを特徴とする請求項5〜8のいずれかに記載の装置。 10. 前記装置は、それによって前記半導体あるいはシリコン構造の像が一 連のフォ一カルプレーンを通して得られる共焦光学(confocal optics)機器を 有することを特徴とする請求項5〜9のいずれかに記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9618897.4A GB9618897D0 (en) | 1996-09-10 | 1996-09-10 | Micro defects in silicon wafers |
GB9618897.4 | 1996-09-10 | ||
PCT/GB1997/002388 WO1998011425A1 (en) | 1996-09-10 | 1997-09-05 | Apparatus and method for detecting micro defects in semi-conductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001500613A true JP2001500613A (ja) | 2001-01-16 |
JP3440421B2 JP3440421B2 (ja) | 2003-08-25 |
Family
ID=10799715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51334498A Expired - Fee Related JP3440421B2 (ja) | 1996-09-10 | 1997-09-05 | 半導体のミクロ欠陥検出装置とその方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7113276B1 (ja) |
EP (1) | EP0925497B1 (ja) |
JP (1) | JP3440421B2 (ja) |
KR (1) | KR100483357B1 (ja) |
AU (1) | AU4126997A (ja) |
DE (1) | DE69718917T2 (ja) |
GB (1) | GB9618897D0 (ja) |
WO (1) | WO1998011425A1 (ja) |
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JP2009512198A (ja) * | 2005-10-11 | 2009-03-19 | ビーティー イメージング ピーティーワイ リミテッド | 間接バンドギャップ半導体構造を検査する方法およびシステム |
KR101375965B1 (ko) | 2011-05-13 | 2014-03-18 | 레자 텍쿠 가부시키가이샤 | 기판 검사장치 및 마스크 검사장치 |
JP2015038481A (ja) * | 2008-03-31 | 2015-02-26 | ビーティー イメージング ピーティーワイ リミテッド | ウエハ画像化と処理の方法及び装置 |
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GB0107618D0 (en) | 2001-03-27 | 2001-05-16 | Aoti Operating Co Inc | Detection and classification of micro-defects in semi-conductors |
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- 1997-09-05 AU AU41269/97A patent/AU4126997A/en not_active Abandoned
- 1997-09-05 WO PCT/GB1997/002388 patent/WO1998011425A1/en active IP Right Grant
- 1997-09-05 JP JP51334498A patent/JP3440421B2/ja not_active Expired - Fee Related
- 1997-09-05 DE DE69718917T patent/DE69718917T2/de not_active Expired - Lifetime
- 1997-09-05 EP EP97939042A patent/EP0925497B1/en not_active Expired - Lifetime
- 1997-09-05 KR KR10-1999-7001700A patent/KR100483357B1/ko not_active IP Right Cessation
- 1997-09-05 US US09/254,521 patent/US7113276B1/en not_active Expired - Fee Related
-
2006
- 2006-09-26 US US11/528,723 patent/US7446868B1/en not_active Expired - Fee Related
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JPH09167791A (ja) * | 1995-12-15 | 1997-06-24 | Sumitomo Metal Ind Ltd | シリコン半導体基板の評価方法及び該方法に使用されるシリコン半導体基板の評価装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009512198A (ja) * | 2005-10-11 | 2009-03-19 | ビーティー イメージング ピーティーワイ リミテッド | 間接バンドギャップ半導体構造を検査する方法およびシステム |
JP2013102172A (ja) * | 2005-10-11 | 2013-05-23 | Bt Imaging Bty Ltd | 間接バンドギャップ半導体構造を検査する方法およびシステム |
KR101365336B1 (ko) * | 2005-10-11 | 2014-02-19 | 비티 이미징 피티와이 리미티드 | 간접 밴드갭 반도체 구조 검사 방법 및 시스템 |
KR101365363B1 (ko) * | 2005-10-11 | 2014-02-20 | 비티 이미징 피티와이 리미티드 | 간접 밴드갭 반도체 구조 검사 방법 및 시스템 |
US9234849B2 (en) | 2005-10-11 | 2016-01-12 | Bt Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor structure |
US9909991B2 (en) | 2005-10-11 | 2018-03-06 | Bt Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor structure |
JP2015038481A (ja) * | 2008-03-31 | 2015-02-26 | ビーティー イメージング ピーティーワイ リミテッド | ウエハ画像化と処理の方法及び装置 |
KR101375965B1 (ko) | 2011-05-13 | 2014-03-18 | 레자 텍쿠 가부시키가이샤 | 기판 검사장치 및 마스크 검사장치 |
Also Published As
Publication number | Publication date |
---|---|
WO1998011425A1 (en) | 1998-03-19 |
US7113276B1 (en) | 2006-09-26 |
EP0925497B1 (en) | 2003-02-05 |
JP3440421B2 (ja) | 2003-08-25 |
KR100483357B1 (ko) | 2005-04-19 |
DE69718917D1 (de) | 2003-03-13 |
KR20000035954A (ko) | 2000-06-26 |
US7446868B1 (en) | 2008-11-04 |
AU4126997A (en) | 1998-04-02 |
EP0925497A1 (en) | 1999-06-30 |
GB9618897D0 (en) | 1996-10-23 |
DE69718917T2 (de) | 2004-02-19 |
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