DE69718917D1 - Verfahren und vorrichtung zum nachweis von mikrofehlern in halbleitern - Google Patents

Verfahren und vorrichtung zum nachweis von mikrofehlern in halbleitern

Info

Publication number
DE69718917D1
DE69718917D1 DE69718917T DE69718917T DE69718917D1 DE 69718917 D1 DE69718917 D1 DE 69718917D1 DE 69718917 T DE69718917 T DE 69718917T DE 69718917 T DE69718917 T DE 69718917T DE 69718917 D1 DE69718917 D1 DE 69718917D1
Authority
DE
Germany
Prior art keywords
semiconductors
detecting micro
errors
micro errors
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69718917T
Other languages
English (en)
Other versions
DE69718917T2 (de
Inventor
Christopher Mayes
Victor Higgs
Heng Chin Freddie Yun
Michael Sweeney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aoti Operating Co Inc
Original Assignee
Aoti Operating Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aoti Operating Co Inc filed Critical Aoti Operating Co Inc
Application granted granted Critical
Publication of DE69718917D1 publication Critical patent/DE69718917D1/de
Publication of DE69718917T2 publication Critical patent/DE69718917T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors

Landscapes

  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE69718917T 1996-09-10 1997-09-05 Verfahren und vorrichtung zum nachweis von mikrofehlern in halbleitern Expired - Lifetime DE69718917T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9618897 1996-09-10
GBGB9618897.4A GB9618897D0 (en) 1996-09-10 1996-09-10 Micro defects in silicon wafers
PCT/GB1997/002388 WO1998011425A1 (en) 1996-09-10 1997-09-05 Apparatus and method for detecting micro defects in semi-conductors

Publications (2)

Publication Number Publication Date
DE69718917D1 true DE69718917D1 (de) 2003-03-13
DE69718917T2 DE69718917T2 (de) 2004-02-19

Family

ID=10799715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69718917T Expired - Lifetime DE69718917T2 (de) 1996-09-10 1997-09-05 Verfahren und vorrichtung zum nachweis von mikrofehlern in halbleitern

Country Status (8)

Country Link
US (2) US7113276B1 (de)
EP (1) EP0925497B1 (de)
JP (1) JP3440421B2 (de)
KR (1) KR100483357B1 (de)
AU (1) AU4126997A (de)
DE (1) DE69718917T2 (de)
GB (1) GB9618897D0 (de)
WO (1) WO1998011425A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9618897D0 (en) * 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
EP1323188A1 (de) * 2000-10-06 2003-07-02 AOTI Operating Company, Inc. Verfahren zur detektion von metallkontamination auf einer oberfläche
GB0107618D0 (en) 2001-03-27 2001-05-16 Aoti Operating Co Inc Detection and classification of micro-defects in semi-conductors
GB0216184D0 (en) * 2002-07-12 2002-08-21 Aoti Operating Co Inc Detection method and apparatus
GB0216622D0 (en) * 2002-07-17 2002-08-28 Aoti Operating Co Inc Detection method and apparatus
GB0216815D0 (en) * 2002-07-19 2002-08-28 Aoti Operating Co Inc Detection method and apparatus
GB0308182D0 (en) 2003-04-09 2003-05-14 Aoti Operating Co Inc Detection method and apparatus
TWI391645B (zh) * 2005-07-06 2013-04-01 Nanometrics Inc 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光
TWI439684B (zh) * 2005-07-06 2014-06-01 Nanometrics Inc 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像
US20070008526A1 (en) * 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
DE102005040010A1 (de) 2005-08-23 2007-03-15 Rwe Schott Solar Gmbh Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element
ES2659781T3 (es) 2005-10-11 2018-03-19 Bt Imaging Pty Limited Método y sistema para inspeccionar una estructura semiconductora de salto de banda indirecto
US20070176119A1 (en) * 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces
HUE050537T2 (hu) * 2006-05-05 2020-12-28 Bt Imaging Pty Ltd Eljárás rendszer indirekt sávréses félvezetõ eszközök lumineszcenciás képalkotás segítségével való tesztelésére
US20070278180A1 (en) * 2006-06-01 2007-12-06 Williamson Mark J Electron induced chemical etching for materials characterization
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7807062B2 (en) 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7791055B2 (en) * 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
EP2059792A4 (de) * 2006-08-01 2010-01-27 Bt Imaging Pty Ltd Bestimmen der diffusionslänge von minoritätsträgern mittels lumineszenz
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
WO2008037002A1 (en) * 2006-09-25 2008-04-03 Newsouth Innovations Pty Limited Methods and systems for performing photoluminescence measurements with reduced photon reabsorption effects
DE102007057011B4 (de) * 2007-11-23 2011-04-28 Pi Photovoltaik-Institut Berlin Ag Erfassungsvorrichtung und Verfahren zum Erfassen einer Beschädigung einer Solarzelle mittels Photolumineszenz
DE102007056944B4 (de) 2007-11-25 2011-02-24 Thomas Wolff Lumineszenz-Messgerät zur ortsaufgelösten Messung von Halbleiterproben
CN104022056B (zh) * 2008-03-31 2017-04-12 Bt成像股份有限公司 用于晶片成像及处理的方法和设备
US20110117681A1 (en) * 2008-07-09 2011-05-19 Bt Imaging Pty Ltd Thin film imaging method and apparatus
KR20110055631A (ko) * 2008-08-19 2011-05-25 비티 이미징 피티와이 리미티드 결함 감지를 위한 방법 및 장치
DE102008044881A1 (de) * 2008-08-29 2010-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Messverfahren für eine Halbleiterstruktur
US8130904B2 (en) 2009-01-29 2012-03-06 The Invention Science Fund I, Llc Diagnostic delivery service
US8047714B2 (en) 2009-01-29 2011-11-01 The Invention Science Fund I, Llc Diagnostic delivery service
CN102483378B (zh) 2009-07-20 2014-06-18 Bt成像股份有限公司 半导体材料光致发光测量中掺杂浓度和少数载流子寿命分离
CN102472962B (zh) * 2009-08-04 2015-08-26 Asml荷兰有限公司 物体检查***和方法
CN102575993B (zh) * 2009-08-14 2015-07-22 Bt成像股份有限公司 半导体材料内不连续性的探测
US8330946B2 (en) 2009-12-15 2012-12-11 Nanometrics Incorporated Silicon filter for photoluminescence metrology
TWI522609B (zh) * 2010-01-04 2016-02-21 Ｂｔ映像私人有限公司 用於分析半導體的方法與系統以及執行該方法與操作該系統的製造物件
DE102010011066B4 (de) * 2010-03-11 2020-10-22 Pi4_Robotics Gmbh Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung
KR101096629B1 (ko) * 2010-05-06 2011-12-21 동국대학교 산학협력단 전계 발광 시료 분석 장치
US8629411B2 (en) 2010-07-13 2014-01-14 First Solar, Inc. Photoluminescence spectroscopy
WO2012016233A1 (en) 2010-07-30 2012-02-02 First Solar, Inc. Photoluminescence measurement tool and associated method
JP4919307B1 (ja) 2011-05-13 2012-04-18 レーザーテック株式会社 基板検査装置及びマスク検査装置
US9638741B2 (en) 2011-06-24 2017-05-02 Kla-Tencor Corporation Method and apparatus for inspection of light emitting semiconductor devices using photoluminescence imaging
RU2486630C1 (ru) * 2012-02-14 2013-06-27 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Способ выявления структурных дефектов в кремнии
KR101336946B1 (ko) 2012-11-27 2013-12-04 한국기초과학지원연구원 발열 분포 측정을 이용한 불량 분석 장치 및 방법
KR102068741B1 (ko) 2013-06-04 2020-01-22 삼성디스플레이 주식회사 다결정 규소막의 검사 방법
US9347862B2 (en) 2013-08-06 2016-05-24 Kla-Tencor Corp. Setting up a wafer inspection process using programmed defects
US9846122B2 (en) 2013-11-26 2017-12-19 Nanometrics Incorporated Optical metrology system for spectral imaging of a sample
US9182351B2 (en) 2013-11-26 2015-11-10 Nanometrics Incorporated Optical metrology system for spectral imaging of a sample
US9551672B2 (en) 2013-12-18 2017-01-24 Lasertec Corporation Defect classifying method and optical inspection apparatus for silicon carbide substrate
US9885671B2 (en) 2014-06-09 2018-02-06 Kla-Tencor Corporation Miniaturized imaging apparatus for wafer edge
US9645097B2 (en) 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
US10883941B2 (en) 2015-05-04 2021-01-05 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
US10018565B2 (en) * 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
EP3165903B1 (de) 2015-11-09 2018-12-26 Nanometrics Incorporated Optisches metrologiesystem zur spektralen abbildung einer probe
JP6472577B2 (ja) 2015-12-30 2019-02-20 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 熱処理システムにおける基板破損検出
WO2017189113A2 (en) * 2016-03-15 2017-11-02 President And Fellows Of Harvard College Substrate defect based demodulation
CN107091822B (zh) * 2017-03-14 2019-09-10 华东师范大学 双光源激发光致发光检测半导体缺陷的装置及其检测方法
CN109916917B (zh) * 2019-04-17 2021-07-13 湖北三环锻造有限公司 一种渗透探伤工艺
CN115575413B (zh) * 2022-11-24 2023-03-07 昂坤视觉(北京)科技有限公司 一种晶圆光致发光缺陷成像***及成像方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246793A (en) * 1979-02-08 1981-01-27 Battelle Development Corporation Nondestructive testing
US4511800A (en) 1983-03-28 1985-04-16 Rca Corporation Optical reflectance method for determining the surface roughness of materials in semiconductor processing
US4740694A (en) 1985-06-07 1988-04-26 Hitachi, Ltd. Method and apparatus for analyzing positron extinction and electron microscope having said apparatus
US4978862A (en) 1988-07-13 1990-12-18 Vti, Inc. Method and apparatus for nondestructively measuring micro defects in materials
US5202744A (en) * 1988-07-29 1993-04-13 Louis Thomas A Electro-optical measuring instruments
CA2062134C (en) 1991-05-31 1997-03-25 Ibm Heteroepitaxial layers with low defect density and arbitrary network parameter
US5539514A (en) 1991-06-26 1996-07-23 Hitachi, Ltd. Foreign particle inspection apparatus and method with front and back illumination
JPH0727945B2 (ja) * 1991-09-26 1995-03-29 信越半導体株式会社 半導体結晶中の深い準位密度分布の評価方法
JPH05273131A (ja) * 1992-03-24 1993-10-22 Sumitomo Metal Ind Ltd ルミネッセンス測定方法
JP2975476B2 (ja) * 1992-03-30 1999-11-10 三井金属鉱業株式会社 結晶内のフォトルミネッセンス計測方法及び装置
JPH06151539A (ja) * 1992-11-05 1994-05-31 Nippondenso Co Ltd 半導体表面の評価方法
JPH09152404A (ja) * 1995-09-11 1997-06-10 Sumitomo Metal Mining Co Ltd 半導体結晶の欠陥濃度測定方法及び半絶縁性ＧａＡｓ結晶の欠陥濃度測定方法
JPH0982771A (ja) * 1995-09-19 1997-03-28 Toshiba Corp 半導体材料の評価方法およびその装置
JPH09167789A (ja) * 1995-12-14 1997-06-24 Toshiba Corp 半導体基板の評価方法
JPH09167791A (ja) * 1995-12-15 1997-06-24 Sumitomo Metal Ind Ltd シリコン半導体基板の評価方法及び該方法に使用されるシリコン半導体基板の評価装置
AU736340B2 (en) 1996-04-25 2001-07-26 Genicon Sciences Corporation Analyte assay using particulate labels
GB9618897D0 (en) 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
TW429309B (en) 1997-09-04 2001-04-11 Komatsu Denshi Kinzoku Kk Apparatus and a method for measuring a density of defects existing in a semiconductor wafer and an apparatus and a method for measuring an inherent scattering intensity of defects existing in a semiconductor wafer
US6256092B1 (en) 1997-11-28 2001-07-03 Hitachi, Ltd. Defect inspection apparatus for silicon wafer
WO1999034386A1 (en) * 1997-12-31 1999-07-08 Telcordia Technologies, Inc. Fiber-optics based micro-photoluminescence system
JP3375876B2 (ja) 1998-02-06 2003-02-10 株式会社日立製作所 結晶欠陥計測方法及び結晶欠陥計測装置
JPH11237345A (ja) 1998-02-24 1999-08-31 Hitachi Ltd 表面計測装置
JPH11274257A (ja) 1998-03-18 1999-10-08 Shin Etsu Handotai Co Ltd 半導体結晶の欠陥評価方法
JPH11354599A (ja) 1998-06-09 1999-12-24 Memc Kk シリコンウェーハの結晶欠陥の検査方法、および同方法に使用する結晶欠陥検査装置
JP3899715B2 (ja) 1998-12-24 2007-03-28 株式会社Ｓｕｍｃｏ シリコンウェーハ表面の検査方法
US7306951B1 (en) 1999-06-08 2007-12-11 Midwest Research Institute Method and apparatus for determining diffusible hydrogen concentrations
US7332344B2 (en) 1999-12-01 2008-02-19 Photonic Research Systems Limited Luminescence assays
US6429968B1 (en) * 2000-03-09 2002-08-06 Agere Systems Guardian Corp Apparatus for photoluminescence microscopy and spectroscopy
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
US6534774B2 (en) 2000-09-08 2003-03-18 Mitsubishi Materials Silicon Corporation Method and apparatus for evaluating the quality of a semiconductor substrate
US6950196B2 (en) 2000-09-20 2005-09-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thickness of a structure on a specimen and at least one additional property of the specimen
EP1323188A1 (de) 2000-10-06 2003-07-02 AOTI Operating Company, Inc. Verfahren zur detektion von metallkontamination auf einer oberfläche
US6630996B2 (en) 2000-11-15 2003-10-07 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
GB0107618D0 (en) * 2001-03-27 2001-05-16 Aoti Operating Co Inc Detection and classification of micro-defects in semi-conductors
US6628111B2 (en) 2001-04-24 2003-09-30 General Electric Company Method and apparatus for corrosion sensing
US6965895B2 (en) 2001-07-16 2005-11-15 Applied Materials, Inc. Method and apparatus for analyzing manufacturing data
JP2003045928A (ja) 2001-07-31 2003-02-14 Shin Etsu Handotai Co Ltd 半導体シリコンウェーハ中のＣｕ汚染評価方法
US7245696B2 (en) 2002-05-29 2007-07-17 Xradia, Inc. Element-specific X-ray fluorescence microscope and method of operation
GB0216815D0 (en) 2002-07-19 2002-08-28 Aoti Operating Co Inc Detection method and apparatus
GB0308182D0 (en) 2003-04-09 2003-05-14 Aoti Operating Co Inc Detection method and apparatus
US6893936B1 (en) 2004-06-29 2005-05-17 International Business Machines Corporation Method of Forming strained SI/SIGE on insulator with silicon germanium buffer
JP4755855B2 (ja) 2005-06-13 2011-08-24 株式会社東芝 半導体ウェーハの検査方法
US20070000434A1 (en) 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
TWI391645B (zh) 2005-07-06 2013-04-01 Nanometrics Inc 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光
TWI439684B (zh) 2005-07-06 2014-06-01 Nanometrics Inc 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像
US20070008526A1 (en) 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
US20070176119A1 (en) 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces

Also Published As

Publication number Publication date
WO1998011425A1 (en) 1998-03-19
DE69718917T2 (de) 2004-02-19
AU4126997A (en) 1998-04-02
KR100483357B1 (ko) 2005-04-19
US7113276B1 (en) 2006-09-26
GB9618897D0 (en) 1996-10-23
KR20000035954A (ko) 2000-06-26
JP2001500613A (ja) 2001-01-16
EP0925497A1 (de) 1999-06-30
US7446868B1 (en) 2008-11-04
JP3440421B2 (ja) 2003-08-25
EP0925497B1 (de) 2003-02-05

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Representative=s name: DF-MP, 80333 MUENCHEN