JP2001256631A - Magnetic recording medium and method of manufacturing the same - Google Patents
Magnetic recording medium and method of manufacturing the sameInfo
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- JP2001256631A JP2001256631A JP2000300906A JP2000300906A JP2001256631A JP 2001256631 A JP2001256631 A JP 2001256631A JP 2000300906 A JP2000300906 A JP 2000300906A JP 2000300906 A JP2000300906 A JP 2000300906A JP 2001256631 A JP2001256631 A JP 2001256631A
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- recording medium
- substrate
- magnetic recording
- magnetic
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高密度磁気記録媒体およ
びその製造方法に係り、更に詳しくは、その熱的安定性
および経時的安定性に優れた磁気記録媒体およびその製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-density magnetic recording medium and a method for manufacturing the same, and more particularly, to a magnetic recording medium excellent in thermal stability and temporal stability and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】情報社会の発展に伴い、高密度記録技術
の開発が切望されている。特に、ビット単価が安く、不
揮発かつ大容量記録の可能な磁気記録においては、高密
度記録の可能な磁気記録媒体の開発が強く要求され、種
々の研究開発によりここ数年で著しい高密度化が実現さ
れた。しかし、将来的に更なる進化が期待される情報化
社会において、例えば十年、二十年先の市場要求に対応
できる技術的見通しは殆ど得られていない。2. Description of the Related Art With the development of the information society, development of high-density recording technology has been eagerly desired. In particular, for magnetic recording that is inexpensive per bit, and is capable of non-volatile and large-capacity recording, the development of a magnetic recording medium capable of high-density recording is strongly demanded. It was realized. However, in the information society where further evolution is expected in the future, for example, there is hardly any technical prospect that can respond to market demands in the next decade or two decades.
【０００３】この技術的行き詰まりの最も大きな原因の
一つに、現行磁気記録媒体が抱える以下のような原理的
問題がある。現行の磁気記録媒体用薄膜は、ＣｏＣｒを
主体とする合金薄膜であるが、この薄膜においては磁性
を担う微小領域の磁気的分離が不十分なため、磁気的に
結合した比較的に大きな磁気集団（クラスタ−）が形成
される。そのサイズは凡そサブミクロンからミクロンオ
−ダ−にも達する。現行の磁気記録技術における最小ビ
ットサイズがサブミクロンオ−ダ−であり、上記磁気ク
ラスタ−サイズと同程度であることを考えると、記録分
解能という点では既に限界に近づいているということが
できる。[0003] One of the biggest causes of this technical deadlock is the following fundamental problem of current magnetic recording media. The current thin films for magnetic recording media are alloy thin films mainly composed of CoCr. However, in this thin film, the magnetic separation of minute regions bearing the magnetism is insufficient, so that a relatively large magnetic group that is magnetically coupled is used. (Cluster) is formed. Its size ranges from submicron to micron order. Considering that the minimum bit size in the current magnetic recording technology is on the order of submicron, which is almost the same as the magnetic cluster size, it can be said that the recording resolution has already reached the limit.
【０００４】現行技術のこのような限界を打破するに
は、記録媒体内の磁性粒子を効率よく磁気絶縁し、磁気
クラスタ−の極小化を図る必要がある。この問題に対す
る一つのブレ−クスル−として、グラニュラ−型媒体が
提案された。グラニュラ−媒体は、酸化物等の非磁性マ
トリクス中に磁性微粒子を析出させた構造を有し、磁性
粒子間が非磁性物質の介在によりほぼ完全に磁気的に絶
縁されている。In order to overcome such limitations of the current technology, it is necessary to efficiently magnetically insulate magnetic particles in a recording medium and minimize the size of magnetic clusters. As one solution to this problem, a granular medium has been proposed. The granular medium has a structure in which magnetic fine particles are precipitated in a nonmagnetic matrix such as an oxide, and the magnetic particles are almost completely magnetically insulated from each other by the interposition of a nonmagnetic substance.
【０００５】したがって、個々の粒子（凡そ１００〜３
００オングストロ−ム程度）が最小の磁化単位となり、
少なくともこの程度のサイズまで微小な高密度記録が可
能となる。実際、最近の研究によれば、ＳｉＯ2非磁性
マトリクス中に磁性粒子を分散析出させたグラニュラ−
媒体において、高密度記録が可能なこと、そして粗大ク
ラスタ−形成の回避によるノイズの顕著な低減効果が確
認されている。Therefore, individual particles (about 100 to 3)
00 Angstrom) is the minimum magnetization unit.
At least up to this size, minute high-density recording becomes possible. In fact, according to recent research, a granular material in which magnetic particles are dispersed and precipitated in a SiO 2 non-magnetic matrix is used.
It has been confirmed that high-density recording is possible on a medium, and a remarkable effect of reducing noise by avoiding formation of coarse clusters.
【０００６】以上のように、グラニュラ−型媒体は次世
代超高密度記録媒体として大変有望な候補であるが、そ
の反面記録状態の熱擾乱という一層深刻な問題を抱えて
いる。この問題について以下に詳述する。As described above, the granular medium is a very promising candidate as a next-generation ultra-high-density recording medium, but has a more serious problem of thermal disturbance in the recording state. This problem will be described in detail below.
【０００７】一般に磁性体は、結晶格子の空間的対称性
を反映した結晶磁気異方性を示す。例えば、六方稠密構
造を有するコバルトでは、結晶主軸（ｃ軸）方向にスピ
ンが向いた場合がもっとも磁気的エネルギ−が低く、そ
の方向からずれるとエネルギ−が高くなり、直交方向で
は最大となる。In general, a magnetic material exhibits crystal magnetic anisotropy reflecting the spatial symmetry of the crystal lattice. For example, in the case of cobalt having a hexagonal close-packed structure, the magnetic energy is lowest when the spin is oriented in the main crystal axis (c-axis) direction.
【０００８】つまり、外場による強制がなければ、常に
スピンはｃ軸方向の二方向のいずれかを向くことにな
る。このスピンの向きの二値情報を活用したものが、磁
気記録の基本である。一個の磁性粒子に着目した場合、
その磁気異方性エネルギ−は、物質そのものにより決ま
る磁気異方性定数に粒子体積を乗じたものが、全エネル
ギ−となる。このエネルギ−が安定方向へのスピン拘束
度を支配し、記録状態の保存につながるわけである。[0008] In other words, unless forced by an external field, the spin always faces one of two directions in the c-axis direction. What utilizes the binary information of the spin direction is the basis of magnetic recording. When focusing on one magnetic particle,
The magnetic anisotropy energy is the total energy obtained by multiplying the magnetic anisotropy constant determined by the substance itself by the particle volume. This energy governs the spin constraint in the stable direction, leading to the preservation of the recorded state.
【０００９】もし、磁性粒子の体積が極端に小さくな
り、磁気異方性エネルギ−が熱エネルギ−と同程度にな
った場合を考えると、熱擾乱によりスピンの向き（つま
り記録状態）は常に揺らいだものとなり、もはや記録状
態を安定に維持できなくなる。上記グラニュラ−媒体
は、極微小な粒子が非磁性物によりほぼ完全に孤立化さ
れてるため、この熱擾乱が極めて深刻な問題となる。こ
のために、グラニュラ−媒体では、記録情報の熱的安定
性や長期保存性が問題となり、その実用化は困難視され
ていた。Considering the case where the volume of the magnetic particles becomes extremely small and the magnetic anisotropy energy becomes almost equal to the heat energy, the direction of the spin (that is, the recording state) always fluctuates due to thermal disturbance. The recording state can no longer be stably maintained. In the above-mentioned granular medium, extremely minute particles are almost completely isolated by a non-magnetic substance, so that this thermal disturbance becomes a very serious problem. For this reason, in the case of the granular medium, the thermal stability and long-term storage stability of the recorded information have become problems, and its practical use has been regarded as difficult.
【００１０】こうした問題を解決するには、本質的に磁
性体の異方性エネルギ−を高める必要があり、その方法
としてＣｏ50Ｐｔ50、Ｆｅ50Ｐｔ50などＣｕＡｕ型構造
の高い結晶磁気異方性を有する規則合金を用いることも
考えられる。しかし、一般にこうした材料は合成温度が
非常に高く、量産化には適さないものであった。In order to solve these problems, it is necessary to essentially increase the anisotropic energy of the magnetic material. As a method for achieving this, a crystal magnetic anisotropic material having a CuAu type structure such as Co 50 Pt 50 or Fe 50 Pt 50 is used. It is also conceivable to use an ordered alloy having properties. However, these materials generally have a very high synthesis temperature and are not suitable for mass production.
【００１１】[0011]
【発明が解決しようとする課題】本発明は、従来研究さ
れてきたグラニュラ−型媒体が抱える記録状態の熱的、
経時的不安定性という問題を解決し、信頼性に優れた高
密度記録媒体およびその製造方法を提供することを目的
とする。DISCLOSURE OF THE INVENTION The present invention is directed to a recording medium having a thermal state,
It is an object of the present invention to solve the problem of temporal instability and to provide a high-density recording medium having excellent reliability and a method of manufacturing the same.
【００１２】[0012]
【課題を解決するための手段】本発明の磁気記録媒体
は、基体上（あるいは基体上の下地層上）に形成された
強磁性粒子からなる強磁性粒子層、または基体上の非磁
性マトリクス中に強磁性粒子が成長してなる強磁性粒子
層を有する磁気記録媒体において、前記強磁性粒子がＦ
1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）の組
成からなるＣｕＡｕ型規則構造を有し、かつ前記Ｆ1-x
Ｍxに対する原子存在比率が０．３以内の非磁性添加元
素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、Ｐｂ、Ｂｉ、Ｓｎ、Ｓ
ｂ）が含有されることを特徴とする。According to the present invention, there is provided a magnetic recording medium comprising: a ferromagnetic particle layer formed of ferromagnetic particles formed on a substrate (or an underlayer on the substrate); In a magnetic recording medium having a ferromagnetic particle layer in which ferromagnetic particles are grown on
1-x M x (F: Fe, Co, M: Pd, Ir, Pt), having a CuAu type ordered structure having a composition, and the F 1-x
Atomic abundance ratio M x 0.3 within a nonmagnetic additive element Y (Y: Ag, In, Au, Pb, Bi, Sn, S
b) is contained.
【００１３】ここにおいて、Ｆ1-xＭxに対するＹの原子
存在比率を０．０１〜０．３の範囲とすることが好まし
く、０．０３〜０．２の範囲とすることがより好まし
い。Here, the atomic ratio of Y to F 1 -xM x is preferably in the range of 0.01 to 0.3, and more preferably in the range of 0.03 to 0.2.
【００１４】また、結晶主軸が主に強磁性粒子層面の法
線方向にあることが好ましく。非磁性マトリクスは炭化
物、窒化物、酸化物またはこれらの混合物からなること
が好ましく、より具体的には、ＳｉＯ2，ＭｇＯ，Ａｌ2
Ｏ3，Ｉｎ2Ｏ3のいずれか１種以上からなることが好ま
しい。Further, it is preferable that the crystal main axis is mainly in the normal direction of the ferromagnetic particle layer surface. The non-magnetic matrix is preferably made of carbide, nitride, oxide or a mixture thereof, and more specifically, SiO 2 , MgO, Al 2
It is preferable to be composed of at least one of O 3 and In 2 O 3 .
【００１５】一方、上記において、ｘ＝０．４０〜０．
６５が好ましい。この範囲においてＣｕＡｕ型規則構造
が形成され、さらに熱的、経時的安定性がより一層向上
する。On the other hand, in the above, x = 0.40-0.
65 is preferred. Within this range, a CuAu type ordered structure is formed, and the thermal and temporal stability are further improved.
【００１６】強磁性粒子層の厚さは１００ｎｍ以下が好
ましく、５０ｎｍ以下がより好ましい。The thickness of the ferromagnetic particle layer is preferably 100 nm or less, more preferably 50 nm or less.
【００１７】基体としては、熱膨張係数が２×１０-5／
℃以下のものが特に好ましい。表面酸化Ｓｉウエハ（〜
２×１０-6／℃）、溶融石英基体（０．４×１０-6／
℃）、ガラス基体（３〜１５×１０-6／℃）等が好適に
用いられる。これら基体に５０ｎｍ以下のＦｅＰｔ−Ａ
ｇ／ＳｉＯ2膜を形成熱処理を施すと、基体の熱膨張係
数の小さいものほど規則度及び（００１）配向の顕著な
改善が認められる。これは基体と膜との熱膨張係数の差
により膜が歪み（引張応力）を受け、この応力の存在に
より規則度そして配向が向上するのではないかと推測さ
れる。The substrate has a coefficient of thermal expansion of 2 × 10 -5 /
C. or lower is particularly preferred. Surface oxidized Si wafer (~
2 × 10 −6 / ° C.), fused quartz substrate (0.4 × 10 −6 /
C.), a glass substrate (3 to 15 * 10 < -6 > / [deg.] C.) and the like are preferably used. FePt-A of 50 nm or less is applied to these substrates.
When the heat treatment for forming the g / SiO 2 film is performed, the order and the (001) orientation are remarkably improved as the thermal expansion coefficient of the substrate becomes smaller. This is presumed to be due to the fact that the film receives strain (tensile stress) due to the difference in the coefficient of thermal expansion between the substrate and the film, and the presence of this stress improves the order and orientation.
【００１８】また、下地層についても基体の場合と同様
に熱膨張係数の小さいものほど好ましい。下地層として
は、Ｃ、Ｓｉ、酸化物（ＳｉＯ2、ＭｇＯ、Ａｌ2Ｏ
3等）、炭化物（ＳｉＷ、ＷＣ等）、窒化物（ＢＮ
等））からなる層であることが好ましい。As for the underlayer, it is preferable that the thermal expansion coefficient is small as in the case of the substrate. C, Si, oxides (SiO 2 , MgO, Al 2 O)
3 ), carbide (SiW, WC, etc.), nitride (BN
And the like).
【００１９】本発明の磁気記録媒体の製造方法は、強磁
性体Ｆ1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐ
ｔ）、非磁性添加元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、Ｐ
ｂ、Ｂｉ、Ｓｎ、Ｓｂ）を同時に基体上（あるいは基体
上に形成された下地層上）に堆積させることを特徴とす
る。The method of manufacturing a magnetic recording medium according to the present invention is directed to a ferromagnetic material F 1-x M x (F: Fe, Co, M: Pd, Ir, P
t), nonmagnetic additive element Y (Y: Ag, In, Au, P
b, Bi, Sn, Sb) are simultaneously deposited on the substrate (or on the underlayer formed on the substrate).
【００２０】また、本発明の磁気記録媒体の製造方法
は、強磁性体Ｆ1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉ
ｒ、Ｐｔ）、非磁性添加元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａ
ｕ、Ｐｂ、Ｂｉ、Ｓｎ、Ｓｂ）、及び非磁性マトリクス
材料を同時に基体上に堆積させることを特徴とする。Further, the method of manufacturing a magnetic recording medium of the present invention is directed to a ferromagnetic material F 1-x M x (F: Fe, Co, M: Pd, I
r, Pt), nonmagnetic additive element Y (Y: Ag, In, A)
u, Pb, Bi, Sn, Sb) and a non-magnetic matrix material are simultaneously deposited on a substrate.
【００２１】上記製造方法においても、強磁性体Ｆ1-x
Ｍx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）、及び
Ｆ1-xＭxに対する原子存在比率が０．３以内であること
が好ましい。In the above manufacturing method, the ferromagnetic material F 1-x
It is preferable that the atom abundance ratio to M x (F: Fe, Co, M: Pd, Ir, Pt) and F 1-x M x is within 0.3.
【００２２】本発明の磁気記録媒体の製造方法は、強磁
性体Ｆ1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐ
ｔ）、非磁性添加元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、Ｐ
ｂ、Ｂｉ、Ｓｎ、Ｓｂ）、及び非磁性マトリクス材料を
同時に基体上に堆積させることを特徴とする。The method of manufacturing a magnetic recording medium according to the present invention is directed to a ferromagnetic material F 1-x M x (F: Fe, Co, M: Pd, Ir, P
t), nonmagnetic additive element Y (Y: Ag, In, Au, P
b, Bi, Sn, Sb) and the non-magnetic matrix material are simultaneously deposited on the substrate.
【００２３】上記製造方法において、強磁性体Ｆ1-xＭx
（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）、及びＦ
1-xＭxに対する原子存在比率が０．３以内の非磁性添加
元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、Ｐｂ、Ｂｉ、Ｓｎ、Ｓ
ｂ）を同時に非磁性あるいは軟磁性基体上に堆積させる
ことが好ましい。In the above manufacturing method, the ferromagnetic substance F 1-x M x
(F: Fe, Co, M: Pd, Ir, Pt), and F
1-x M atomic abundance ratio for x is 0.3 within a nonmagnetic additive element Y (Y: Ag, In, Au, Pb, Bi, Sn, S
Preferably, b) is simultaneously deposited on a non-magnetic or soft magnetic substrate.
【００２４】[0024]
【作用】本発明者等は、上記従来技術が抱える記録状態
の熱的および経時的不安定性という問題を解決するため
に鋭意検討した結果、Ｆ1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：
Ｐｄ、Ｉｒ、Ｐｔ）の組成からなるＣｕＡｕ型規則構造
の強磁性粒子集合体あるいはグラニュラ−構造を作製す
る際、非磁性元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、Ｐｂ、Ｂ
ｉ、Ｓｎ、Ｓｂ）を所定量添加することにより、磁気特
性を劣化させること無く規則化温度を著しく低減できる
ことを発見した。これにより、高い結晶磁気異方性のＦ
1-xＭx規則合金微粒子集合体を、量産化レベルの低い温
度で合成することが可能になった。すなわち、従来は６
５０℃以上の温度が必要であったが、本発明において
は、３００〜６００℃の温度においても規則化が達成さ
れる。ただ、３００℃未満では条件によっては良好な規
則が達成されない場合がある。３００〜６００℃の範囲
において、４００〜５５０℃が好ましく、４５０〜５０
０がより好ましい。The present inventors have conducted intensive studies to solve the problem of thermal and temporal instability of the recording state of the prior art, and as a result, found that F 1-x M x (F: Fe, Co, M :
When producing a ferromagnetic particle aggregate or a granular structure having a CuAu type ordered structure composed of Pd, Ir, Pt), the nonmagnetic element Y (Y: Ag, In, Au, Pb, B)
It has been found that by adding a predetermined amount of i, Sn, Sb), the ordering temperature can be significantly reduced without deteriorating magnetic properties. As a result, F of high crystal magnetic anisotropy
It has become possible to synthesize 1-xM x ordered alloy fine particle aggregates at a low temperature for mass production. That is, 6
Although a temperature of 50 ° C. or higher was required, in the present invention, ordering is achieved even at a temperature of 300 to 600 ° C. However, below 300 ° C., good rules may not be achieved depending on conditions. In the range of 300 to 600 ° C, 400 to 550 ° C is preferable, and 450 to 50 ° C.
0 is more preferred.
【００２５】上記非磁性元素Ｙの添加量について、磁気
特性を損なわない範囲で規則化温度の低減が顕著に認め
られるのは、Ｆ1-xＭxに対するＹの原子存在比率が０．
３以内であった。より望ましい比率としては０．０１〜
０．３であり、更に望ましくは０．０３〜０．２であっ
た。以上のような少量の元素Ｙの添加により、Ｆ1-xＭx
の規則化温度は、それを添加しない場合に比べ、１００
℃以上低減した。[0025] The amount of the non-magnetic element Y, the reduction of the ordering temperature within a range not to impair the magnetic properties were conspicuously observed is, F 1-x M atomic abundance ratio of Y with respect to x is 0.
Within three. A more desirable ratio is 0.01 to
0.3, and more preferably 0.03 to 0.2. By adding a small amount of element Y as described above, F 1-x M x
Has a regularization temperature of 100
℃ or more.
【００２６】本発明の効果は、特に次のような場合に顕
著に現れる。第一は、下地層を介すかあるいは介さない
で基体上にＦ1-xＭx規則合金膜を形成する場合である。
特に膜厚が１００ｎｍ以下と薄い場合に、元素Ｙの添加
による規則化温度の低下は著しい。ここでＦ1-xＭxの規
則化は、成長時の基体温度を高くすることによっても実
現されるし、不規則相を形成した後の熱処理によっても
可能である。いずれの場合にも元素Ｙの添加による規則
化温度の低下が顕著に認められる。The effect of the present invention is particularly noticeable in the following cases. The first is a case where an F 1-x M x ordered alloy film is formed on a substrate with or without an underlayer.
In particular, when the film thickness is as thin as 100 nm or less, the addition of the element Y significantly reduces the ordering temperature. Here, the ordering of F 1-x M x can be realized by increasing the substrate temperature during growth, or by heat treatment after forming an irregular phase. In each case, a decrease in the ordering temperature due to the addition of the element Y is remarkably observed.
【００２７】本発明の効果が顕著に認められる第二のケ
−スは、Ｆ1-xＭxと非磁性マトリクス材料を同時に基体
上に堆積させる、いわゆるグラニュラ−膜の場合であ
る。この場合には、膜中に元素Ｙを所定量添加すれば、
先の例と同様に顕著な規則化温度の低減を実現できる。
このケ−スでは、磁性合金Ｆ1-xＭx微粒子が非磁性マト
リクス中に分散した形態となるが、このような相分離及
び規則化を進行させる手段として、上記第一の場合と同
様に成長時の基体加熱あるいは成膜後の熱処理のいずれ
をも選択できる。熱処理の温度は、膜の厚さにもよるが
堆積時の基体温度と同様の温度を適用すればよい。A second case where the effect of the present invention is remarkably recognized is a so-called granular film in which F 1 -xM x and a non-magnetic matrix material are simultaneously deposited on a substrate. In this case, if a predetermined amount of the element Y is added to the film,
As in the previous example, a remarkable reduction in ordering temperature can be realized.
In this case, the magnetic alloy F 1-x M x fine particles are dispersed in a non-magnetic matrix. As a means for promoting such phase separation and ordering, as in the first case, Either substrate heating during growth or heat treatment after film formation can be selected. Although the temperature of the heat treatment depends on the thickness of the film, a temperature similar to the substrate temperature during deposition may be applied.
【００２８】本発明の検討中に見出された更に有用かつ
興味深い現象として、元素Ｙの添加によるＦ1-xＭx規則
合金の優先配向がある。以下にその内容を述べる。Ｆ
1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）合金
は、ｘ〜０．５付近でＣｕＡｕ型規則構造をとる。この
時にＦ、Ｍがランダムに配列した面心立方構造（ｆｃ
ｃ）の不規則相から、一軸方向に伸縮した面心正方構造
（ｆｃｔ）の規則相に規則−不規則変態を起こす。この
伸縮した結晶軸方向（（００１）方向）には、一原子層
毎にＦとＭが交互に積層されたいわゆる原子レベルでの
超格子が形成される。A further useful and interesting phenomenon discovered during the study of the present invention is the preferential orientation of F 1-x M x ordered alloys by the addition of element Y. The details are described below. F
The 1-x M x (F: Fe, Co, M: Pd, Ir, Pt) alloy has a CuAu type ordered structure near x to 0.5. At this time, a face-centered cubic structure in which F and M are randomly arranged (fc
From the irregular phase of c), an order-irregular transformation is caused to a regular phase of a face-centered square structure (fct) expanded and contracted in one axis direction. In the stretched crystal axis direction ((001) direction), a so-called atomic-level superlattice in which F and M are alternately stacked for each atomic layer is formed.
【００２９】このような原子配列の異方性は、一般に極
めて強い磁気異方性を生み出す。従って、Ｆ1-xＭx規則
合金微粒子の結晶軸の配向状態は磁気特性を支配するた
め、結晶配向の制御は極めて重要な課題となる。ＦｅＰ
ｔあるいはＣｏＰｔ規則合金などを例にとれば、（００
１）が磁化容易軸となり、その磁気エネルギ−は１０7
ｅｒｇ／ｃｃ台にも達する。今回我々が新たに見出した
現象は、少量の非磁性元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、
Ｐｂ、Ｂｉ、Ｓｎ、Ｓｂ）の添加により、特に膜厚５０
ｎｍという薄い領域において、前記二つのケ−スいずれ
の場合にも、ほぼ理想に近いｆｃｔ（００１）配向が実
現されることである。つまりｆｃｔ（００１）軸は膜面
法線方向に向き、その結果面直方向に強い磁気異方性が
現れる。例えば、ＦｅＰｔやＣｏＰｔ規則合金などでは
ほぼ理想的な垂直磁化膜となり、垂直磁気記録に好適な
材料となる。Such anisotropy of atomic arrangement generally produces extremely strong magnetic anisotropy. Therefore, since the orientation of the crystal axis of the F 1-x M x ordered alloy fine particles dominate the magnetic properties, controlling the crystal orientation is a very important issue. FeP
If t or CoPt ordered alloy is taken as an example, (00
1) becomes the axis of easy magnetization, and its magnetic energy is 10 7
erg / cc level. The phenomenon we have newly found this time is that a small amount of nonmagnetic element Y (Y: Ag, In, Au,
By adding Pb, Bi, Sn, and Sb), a film thickness of 50
In a region as thin as nm, the fct (001) orientation which is almost ideal is realized in any of the two cases. In other words, the fct (001) axis is oriented in the direction normal to the film surface, and as a result, strong magnetic anisotropy appears in the direction perpendicular to the surface. For example, a FePt or CoPt ordered alloy or the like becomes a nearly ideal perpendicular magnetic film, and is a material suitable for perpendicular magnetic recording.
【００３０】以下、本発明を実施例により説明する。Hereinafter, the present invention will be described with reference to examples.
【００３１】[0031]
【実施例】（実施例１）ＳｉＯ2タ−ゲットとＣｏ−５
０ａｔ．％Ｐｔタ−ゲットをスパッタリングし、溶融石
英基板上に全体膜厚が約１００ｎｍとなるよう同時堆積
した。[Example] (Example 1) SiO 2 data - target and Co-5
0 at. % Pt target was sputtered and co-deposited on a fused quartz substrate to a total thickness of about 100 nm.
【００３２】また、添加元素の影響を調べるために、Ａ
ｇチップをＣｏ−Ｐｔタ−ゲット上に配置し、同様にス
パッタを行った。In order to investigate the effect of the added element,
The g chip was placed on a Co-Pt target, and sputtering was performed in the same manner.
【００３３】その後、１×１０-6Ｔｏｒｒ以下の真空中
で４５０℃で１時間熱処理をおこなった。Thereafter, heat treatment was performed at 450 ° C. for 1 hour in a vacuum of 1 × 10 −6 Torr or less.
【００３４】Ｃｏ−Ｐｔに対するＡｇの原子存在比率Ｒ
はＥＤＸにより決定し、Ｒを０．０３〜０．３の範囲で
変化させた。結晶構造及び規則化パラメタ−ＳはＸ線回
折から決定した。磁気特性はＳＱＵＩＤ（最大印加磁場
９Ｔ）により測定した。測定結果を表１にまとめる（試
料１〜５）。Atomic ratio R of Ag to Co-Pt
Was determined by EDX, and R was changed in the range of 0.03 to 0.3. Crystal structure and ordered parameter-S were determined from X-ray diffraction. Magnetic properties were measured by SQUID (maximum applied magnetic field 9T). The measurement results are summarized in Table 1 (Samples 1 to 5).
【００３５】表中、Ｈｃｉは面内方向保磁力、Ｈｃｐは
面直方向保磁力を示し、結晶配向性は積分回折強度比γ
＝Ｉ002／（Ｉ111＋Ｉ002＋Ｉ200）を目安として評価し
た。In the table, Hci indicates the in-plane coercive force, Hcp indicates the coercive force in the direction perpendicular to the plane, and the crystal orientation is determined by the integrated diffraction intensity ratio γ.
= I 002 / (I 111 + I 002 + I 200 ).
【００３６】なお、保磁力が大きいほど磁気粒子の異方
性エネルギーは高く、その結果、磁気粒子は熱擾乱の影
響を受けにくく安定性に優れていることを意味する。The larger the coercive force, the higher the anisotropy energy of the magnetic particles. As a result, it means that the magnetic particles are less susceptible to thermal disturbance and have better stability.
【００３７】（実施例２）実施例１と同様の条件で添加
元素ＡｇをＩｎ、Ａｕ、Ｐｂ、Ｂｉに替えて試料作製を
おこなった。結果を表１に示す（試料６〜９）。Example 2 A sample was prepared under the same conditions as in Example 1 except that the additive element Ag was changed to In, Au, Pb, and Bi. The results are shown in Table 1 (samples 6 to 9).
【００３８】（実施例３）実施例１と同様の条件下で、
添加元素をＡｇ（Ｒ＝０．１）として、全膜厚を２〜１
００ｎｍの範囲で変化させた。結果を表１に示す（試料
１０〜１３）。Example 3 Under the same conditions as in Example 1,
When the additive element is Ag (R = 0.1), the total film thickness is 2 to 1
It was changed in the range of 00 nm. The results are shown in Table 1 (samples 10 to 13).
【００３９】（実施例４）酸化シリコンウェハ−基板を
４５０℃に加熱した状態で、Ｆｅ−５０ａｔ．％Ｐｔに
Ｒ＝０．０８のＡｇを含有する膜を１５ｎｍ堆積し測定
試料とした。結果を表２に示す（試料２７）。(Example 4) While a silicon oxide wafer-substrate was heated to 450 ° C, Fe-50 at. A film containing Ag of R = 0.08 in% Pt was deposited to a thickness of 15 nm to obtain a measurement sample. The results are shown in Table 2 (Sample 27).
【００４０】（比較例１）実施例１と同様の条件下で、
Ａｇを添加元素せずに、試料作製をおこなった。結果を
表１に示す（試料１４）。Comparative Example 1 Under the same conditions as in Example 1,
A sample was prepared without adding Ag. The results are shown in Table 1 (Sample 14).
【００４１】（比較例２）実施例２と同様の条件下で、
Ａｌ、Ｔｉ、Ｚｎ、Ｃｕ、、Ｍｏ、Ｒｈ、Ｔａ、Ｗ、を
添加し、試料作製を行った。結果を表１に示す（試料１
５〜２２）。Comparative Example 2 Under the same conditions as in Example 2,
Samples were prepared by adding Al, Ti, Zn, Cu, Mo, Rh, Ta, and W. The results are shown in Table 1 (Sample 1
5-22).
【００４２】（比較例３）実施例３と同様の条件下で、
Ａｇを添加せずに試料作製をおこなった。結果を表１に
示す（試料２３〜２６）。Comparative Example 3 Under the same conditions as in Example 3,
A sample was prepared without adding Ag. The results are shown in Table 1 (samples 23 to 26).
【００４３】（比較例４）実施例４と同様の条件下で、
Ａｇを添加しないＦｅ−５０ａｔ．％Ｐｔ膜を作製し
た。結果を表２に示す（試料２８）。Comparative Example 4 Under the same conditions as in Example 4,
Ag-free Fe-50 at. % Pt film was produced. The results are shown in Table 2 (Sample 28).
【００４４】（実施例５）基板をＮｉＰコートＡｌ基板
（熱膨張係数〜３×１０-5／℃）に替え実施例１と同様
の試験を行った。Example 5 The same test as in Example 1 was performed, except that the substrate was changed to a NiP-coated Al substrate (coefficient of thermal expansion up to 3 × 10 −5 / ° C.).
【００４５】溶融石英基板を用いた実施例１の場合が本
例より規則化度及び（００１）配向は優れていた。た
だ、本例は、従来例よりは規則化度及び（００１）配向
は優れていた。In the case of Example 1 using a fused quartz substrate, the degree of ordering and (001) orientation were superior to those of this example. However, in this example, the degree of ordering and (001) orientation were superior to the conventional example.
【００４６】（実施例６）上記実施例では、堆積後に熱
処理を行ったが、本実施例では、堆積後の熱処理に替え
て堆積時に基板の加熱を行った。(Embodiment 6) In the above embodiment, the heat treatment was performed after the deposition, but in this embodiment, the substrate was heated during the deposition instead of the heat treatment after the deposition.
【００４７】加熱温度は２５０〜６００℃の範囲で温度
を替えて行った。The heating temperature was changed in the range of 250 to 600 ° C.
【００４８】３００の温度においても規則化が達成され
た。２５０℃では必ずしも良好な規則が達成されなかっ
た。４００〜５５０℃においてより良好な結果が得ら
れ、４５０〜５００においてさらに良好な結果が得られ
た。Ordering was also achieved at a temperature of 300. At 250 ° C., good rules were not always achieved. Better results were obtained at 400-550 ° C and even better results at 450-500.
【００４９】[0049]
【表１】 [Table 1]
【００５０】[0050]
【表２】 [Table 2]
【００５１】（実施例７）Ｃｏ−５０ａｔ．％Ｐｔタ−
ゲットをスパッタリングし、溶融石英基板上に全体膜厚
が約３０ｎｍとなるよう堆積した。Example 7 Co-50 at. % Pt tar
A get was sputtered and deposited on a fused quartz substrate so as to have an overall film thickness of about 30 nm.
【００５２】また、添加元素の影響を調べるために、Ｓ
ｎ、ＳｂチップをＣｏ−Ｐｔタ−ゲット上に配置し、同
様にスパッタを行った。In order to investigate the effect of the added element,
The n and Sb chips were placed on a Co-Pt target, and sputtering was performed in the same manner.
【００５３】その後、１×１０-6Ｔｏｒｒ以下の真空中
で４５０℃で１時間熱処理をおこなった。Thereafter, heat treatment was performed at 450 ° C. for 1 hour in a vacuum of 1 × 10 −6 Torr or less.
【００５４】Ｃｏ−Ｐｔに対するＳｎ、Ｓｂの原子存在
比率ＲはＥＤＸにより決定し、Ｒを０．０３〜０．３の
範囲で変化させた。結晶構造及び規則化パラメタ−Ｓは
Ｘ線回折から決定した。磁気特性はＳＱＵＩＤ（最大印
加磁場９Ｔ）により測定した。測定結果を表３にまとめ
る（試料２９〜３４）。The atomic ratio R of Sn and Sb to Co-Pt was determined by EDX, and R was changed in the range of 0.03 to 0.3. Crystal structure and ordered parameter-S were determined from X-ray diffraction. Magnetic properties were measured by SQUID (maximum applied magnetic field 9T). The measurement results are summarized in Table 3 (samples 29 to 34).
【００５５】表中、Ｈｃｉは面内方向保磁力、Ｈｃｐは
面直方向保磁力を示し、結晶配向性は積分回折強度比γ
＝Ｉ002／（Ｉ111＋Ｉ002＋Ｉ200）を目安として評価し
た。In the table, Hci indicates an in-plane coercive force, Hcp indicates a coercive force in a direction perpendicular to the plane, and the crystal orientation is represented by an integrated diffraction intensity ratio γ.
= I 002 / (I 111 + I 002 + I 200 ).
【００５６】（比較例５）実施例７と同様の条件でＳ
ｎ、Ｓｂを添加せずに試料作製を行った。結果を表３に
示す（試料３５）。(Comparative Example 5) S under the same conditions as in Example 7.
A sample was prepared without adding n and Sb. The results are shown in Table 3 (Sample 35).
【００５７】[0057]
【表３】 [Table 3]
【００５８】[0058]
【発明の効果】本発明によれば、従来研究されてきたグ
ラニュラ−型媒体が抱える記録状態の熱的、経時的不安
定性という問題を解決し、信頼性に優れた高密度記録媒
体およびその製造方法を提供することを目的ことができ
るという顕著な効果を達成することができる。According to the present invention, the problem of thermal and temporal instability in the recording state of a granular medium which has been studied in the prior art is solved, and a high-density recording medium excellent in reliability and its manufacture. The remarkable effect that the method can be aimed at can be achieved.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｆ 10/26 Ｈ０１Ｆ 10/26 41/16 41/16 Ｆターム(参考） 5D006 BB01 BB06 BB07 BB09 CA01 CB01 5D112 AA05 BB01 BB06 FA04 FB19 GB01 5E049 AA01 AA04 AA09 BA06 BA08 DB04 EB06 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01F 10/26 H01F 10/26 41/16 41/16 F term (Reference) 5D006 BB01 BB06 BB07 BB09 CA01 CB01 5D112 AA05 BB01 BB06 FA04 FB19 GB01 5E049 AA01 AA04 AA09 BA06 BA08 DB04 EB06
Claims (16)
形成された強磁性粒子からなる強磁性粒子層、または基
体上の非磁性マトリクス中に強磁性粒子が成長してなる
強磁性粒子層を有する磁気記録媒体において、 前記強磁性粒子がＦ1-xＭx（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐ
ｄ、Ｉｒ、Ｐｔ）の組成からなるＣｕＡｕ型規則構造を
有し、かつ前記Ｆ1-xＭxに対する原子存在比率が０．３
以内の非磁性添加元素Ｙ（Ｙ：Ａｇ、Ｉｎ、Ａｕ、Ｐ
ｂ、Ｂｉ、Ｓｎ、Ｓｂ）が含有されることを特徴とする
磁気記録媒体。1. A ferromagnetic particle layer composed of ferromagnetic particles formed on a substrate (or an underlayer on the substrate) or a ferromagnetic particle formed by growing ferromagnetic particles in a non-magnetic matrix on the substrate. In the magnetic recording medium having a layer, the ferromagnetic particles are composed of F 1-x M x (F: Fe, Co, M: P
d, Ir, having a CuAu type ordered structure having a composition of Pt), and atomic abundance ratio with respect to the F 1-x M x is 0.3
Within the non-magnetic additive element Y (Y: Ag, In, Au, P
b, Bi, Sn, Sb).
０．０１〜０．３の範囲にあることを特徴とする請求項
１に記載の磁気記録媒体。2. The magnetic recording medium according to claim 1, wherein the atomic ratio of Y to F 1-x M x is in the range of 0.01 to 0.3.
０．０３〜０．２の範囲にあることを特徴とする請求項
１記載の磁気記録媒体。3. The magnetic recording medium according to claim 1, wherein the atomic ratio of Y to F 1-x M x is in the range of 0.03 to 0.2.
を特徴とする請求項１ないし３のいずれか１項に記載の
磁気記録媒体。4. The magnetic recording medium according to claim 1, wherein the crystal main axis is mainly in a direction normal to the film surface.
物、酸化物またはこれらの混合物からなることを特徴と
する請求項１ないし４のいずれか１項に記載の磁気記録
媒体。5. The magnetic recording medium according to claim 1, wherein the non-magnetic matrix is made of a carbide, a nitride, an oxide, or a mixture thereof.
Ｏ，Ａｌ2Ｏ3，Ｉｎ2Ｏ3のいずれか１種以上からなるこ
とを特徴とする請求項５記載の磁気記録媒体。6. The non-magnetic matrix is made of SiO 2 , Mg.
O, Al 2 O 3, In 2 magnetic recording medium according to claim 5, characterized in that it consists of any one or more of O 3.
徴とする請求項１ないし６のいずれか１項に記載の磁気
記録媒体。7. The magnetic recording medium according to claim 1, wherein x = 0.40 to 0.65.
下であることを特徴とする請求項１ないし７のいずれか
１項に記載の磁気記録媒体。8. The magnetic recording medium according to claim 1, wherein the thickness of the ferromagnetic particle layer is 100 nm or less.
以下であることを特徴とする請求項１ないし８のいずれ
か１項に記載の磁気記録媒体。9. The substrate has a coefficient of thermal expansion of 2 × 10 −5 / ° C.
The magnetic recording medium according to claim 1, wherein:
融石英基体、ガラス基体であることを特徴とする請求項
１ないし８のいずれか１項に記載の磁気記録媒体。10. The magnetic recording medium according to claim 1, wherein the substrate is a surface-oxidized Si wafer, a fused quartz substrate, or a glass substrate.
化物、窒化物から層であることを特徴とする請求項１な
いし１０のいずれか１項に記載の磁気記録媒体。11. The magnetic recording medium according to claim 1, wherein the underlayer is a layer made of C, Si, oxide, carbide, or nitride.
Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）、非磁性添加元素Ｙ（Ｙ：Ａ
ｇ、Ｉｎ、Ａｕ、Ｐｂ、Ｂｉ、Ｓｎ、Ｓｂ）を同時に基
体上（あるいは基体上の下地層上）に堆積させることを
特徴とする磁気記録媒体の製造方法。12. A ferromagnetic material F 1-x M x (F: Fe, Co,
M: Pd, Ir, Pt), nonmagnetic additive element Y (Y: A
g, In, Au, Pb, Bi, Sn, and Sb) are simultaneously deposited on a substrate (or on a base layer on the substrate).
Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）、非磁性添加元素Ｙ（Ｙ：Ａ
ｇ、Ｉｎ、Ａｕ、Ｐｂ、Ｂｉ、Ｓｎ、Ｓｂ）、及び非磁
性マトリクス材料を同時に基体上に堆積させることを特
徴とする磁気記録媒体の製造方法。13. A ferromagnetic material F 1-x M x (F: Fe, Co,
M: Pd, Ir, Pt), nonmagnetic additive element Y (Y: A
g, In, Au, Pb, Bi, Sn, Sb) and a non-magnetic matrix material are simultaneously deposited on a substrate.
Ｍ：Ｐｄ、Ｉｒ、Ｐｔ）、及びＦ1-xＭxに対する原子存
在比率が０．３以内であることを特徴とする請求項１２
または１３に記載の磁気記録媒体の製造方法。14. A ferromagnetic material F 1-x M x (F: Fe, Co,
M: Pd, Ir, Pt), and the atomic abundance ratio to F 1-x M x is within 0.3.
Or a method for manufacturing a magnetic recording medium according to item 13.
℃とすることを特徴とする請求項１２ないし１４のいず
れか１項に記載の磁気記録媒体の製造方法。15. The substrate temperature during deposition is 300 ° C. to 600 ° C.
15. The method for producing a magnetic recording medium according to claim 12, wherein the temperature is set to ° C.
で行うことを特徴とする請求項１２ないし１４のいずれ
か１項に記載の磁気記録媒体の製造方法。16. Post-deposition heat treatment at 300 ° C. to 600 ° C.
The method according to any one of claims 12 to 14, wherein the method is performed.
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