JP2003006830A - Magnetic recording medium and its production method - Google Patents
Magnetic recording medium and its production methodInfo
- Publication number
- JP2003006830A JP2003006830A JP2001184162A JP2001184162A JP2003006830A JP 2003006830 A JP2003006830 A JP 2003006830A JP 2001184162 A JP2001184162 A JP 2001184162A JP 2001184162 A JP2001184162 A JP 2001184162A JP 2003006830 A JP2003006830 A JP 2003006830A
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- Japan
- Prior art keywords
- magnetic recording
- recording medium
- substrate
- medium according
- magnetic
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高密度の磁気記録媒体及
びその作成方法に係り，更に詳しくはその熱的および経
時安定性の改善に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high density magnetic recording medium and a method for producing the same, and more particularly to improvement of thermal and aging stability thereof.
【０００２】[0002]
【従来の技術】情報社会の発展に伴い，高密度記録技術
の開発が切望されている。特に，ビット単価が安く，不
揮発かつ大容量記録が可能な磁気記録においては，高密
度記録の可能な磁気記録媒体の開発が強く要求され，種
々の研究開発によりここ数年で著しい高密度化が実現さ
れた。しかし，将来的に更なる進化が期待される情報化
社会において，例えば十年，二十年先の市場要求に対応
できる技術的見通しは殆ど得られていない。2. Description of the Related Art With the development of the information society, the development of high-density recording technology has been earnestly desired. In particular, for magnetic recording that has a low bit unit price and is capable of non-volatile and large-capacity recording, there is a strong demand for the development of magnetic recording media capable of high-density recording. It was realized. However, in the information-oriented society, which is expected to further evolve in the future, little technical prospects have been obtained that can meet market demands of 10 to 20 years in the future.
【０００３】この技術的行き詰まりの最も大きな原因の
一つに，現行磁気記録媒体が抱える以下のような原理的
問題がある。現行の磁気記録媒体用薄膜は，ＣｏＣｒを
主体とする合金薄膜であり，この薄膜を構成する個々の
微粒子内では磁気相分離により，Ｃｏリッチ強磁性領域
の中心部を非磁性Ｃｒリッチの殻が取り囲む構造をとっ
ている。この構造は，強磁性粒子間の磁気的結合を低減
させ，その結果優れたＳ／Ｎの実現を可能にしている。One of the major causes of this technical deadlock is the following principle problem of the current magnetic recording medium. The current thin film for magnetic recording media is an alloy thin film mainly composed of CoCr, and a non-magnetic Cr-rich shell is formed in the center of the Co-rich ferromagnetic region due to magnetic phase separation in the individual fine particles constituting this thin film. It has a surrounding structure. This structure reduces the magnetic coupling between the ferromagnetic particles and, as a result, realizes excellent S / N.
【０００４】一方，このような孤立構造は，磁性粒子の
体積を減らすため，磁化の熱擾乱（記録状態の不安定
化）を顕著にする。磁性体が有する磁気異方性エネルギ
−をＫ，強磁性粒子の体積をｖとすると，それらの積Ｋ
ｖが磁化の安定性の指標となる。熱エネルギ−はｋＴ
（ｋ：ボルツマン定数，Ｔ：温度）と表されるから，こ
の量がＫｖに比べ無視できなくなると，熱擾乱が顕著と
なって，メモリ−情報の消失という深刻な問題があらわ
れてくる。On the other hand, such an isolated structure reduces the volume of the magnetic particles, so that thermal disturbance of the magnetization (destabilization of the recording state) becomes remarkable. Let K be the magnetic anisotropy energy of a magnetic substance and v be the volume of ferromagnetic particles.
v is an index of the stability of magnetization. Thermal energy is kT
Since it is expressed as (k: Boltzmann's constant, T: temperature), if this amount cannot be ignored compared to Kv, thermal agitation becomes remarkable and a serious problem of memory-information loss appears.
【０００５】以上述べたように高密度記録媒体では，Ｓ
／Ｎの面から磁化単位ｖの微小化が求められ，熱安定性
の面からはＫｖの増加が求められている。如何にして，
これら相反する要求を両立させるかが大きな課題であ
る。最も単純には，小さいｖを保ちながら異方性エネル
ギ−Ｋを増加させることが有効と考えられる。上記Ｃｏ
Ｃｒ合金系のＫの値は高々１０６ｅｒｇ／ｃｃ程度であ
るため，１００オングストロ−ムという粒子サイズでも
著しい熱擾乱を受ける。As described above, in the high density recording medium, S
The miniaturization of the magnetization unit v is required from the aspect of / N, and the increase of Kv is required from the aspect of thermal stability. How
A major issue is how to meet these conflicting requirements. In the simplest case, it is considered effective to increase the anisotropic energy-K while keeping a small v. Above Co
Since the value of K of the Cr alloy system is at most about 10 6 erg / cc, even if the particle size is 100 angstrom, it is subjected to significant thermal agitation.
【０００６】こうした熱擾乱の問題を避けるため，Ｓｍ
−Ｃｏ，Ｎｄ−Ｆｅ−Ｂなどの高い異方性エネルギ−の
永久磁石材料が検討され始めている。中でも，ＣｕＡｕ
型構造を有するＦｅＰｔ，ＣｏＰｔなどの規則合金は１
０７〜１０８ ｅｒｇ／ｃｃの高い異方性を有し，かつ
化学的にも安定であることから，最近活発に研究されて
いる。In order to avoid the problem of thermal disturbance, Sm
Permanent magnet materials having high anisotropy energy such as —Co and Nd—Fe—B have begun to be studied. Above all, CuAu
FePt, CoPt and other ordered alloys having a type structure are 1
Since it has a high anisotropy of 0 7 to 10 8 erg / cc and is chemically stable, it has been actively researched recently.
【０００７】しかし，こうした合金に対して，規則／不
規則変態を生じせしめて規則合金とするには，６００℃
Ｃ以上もの高い熱処理温度を必要とする。こうした高温
プロセスは量産に適さず，プロセス温度の低減が切望さ
れていた。However, 600 ° C. is required to form an ordered alloy by causing ordered / disordered transformation in such an alloy.
A heat treatment temperature as high as C or higher is required. These high-temperature processes are not suitable for mass production, and there has been a strong demand for a reduction in process temperature.
【０００８】[0008]
【発明が解決しようとする課題】本発明は，従来研究さ
れてきたＣｕＡｕ型規則合金Ｆ１−ｘＭｘ（Ｆ：Ｆｅ，
Ｃｏ，Ｍ：Ｐｄ，Ｉｒ，Ｐｔ，０．３５＜ｘ＜０．６
５）薄膜媒体が抱える高温プロセスという問題を解決
し，以って量産性に優れかつ信頼性に優れた高密度記録
媒体用薄膜及びその作成方法を提供することを目的とす
る。DISCLOSURE OF THE INVENTION The present invention is based on the CuAu type ordered alloy F 1-x M x (F: Fe,
Co, M: Pd, Ir, Pt, 0.35 <x <0.6
5) An object of the present invention is to provide a thin film for a high-density recording medium which is excellent in mass productivity and excellent in reliability and a method for producing the thin film medium, which solves the problem of high temperature process.
【０００９】[0009]
【課題を解決するため手段】本発明の磁気記録媒体は、
基体上（あるいは基体上の下地層上）に形成された強磁
性体からなる強磁性層、または基体上の非磁性マトリク
ス中に強磁性粒子が成長してなる強磁性粒子層を有する
磁気記録媒体において、強磁性体がＦ１−ｘＭｘ（Ｆ：
Ｆｅ，Ｃｏ，Ｍ：Ｐｄ，Ｉｒ，Ｐｔ，０．３５＜ｘ＜
０．６５）の組成からなるＣｕＡｕ型規則構造を有し，
かつＦ１−ｘＭｘ中のＢ存在率が０．０１〜０．３０で
あることを特徴とする。The magnetic recording medium of the present invention comprises:
Magnetic recording medium having a ferromagnetic layer made of a ferromagnetic material formed on a substrate (or an underlayer on the substrate), or a ferromagnetic particle layer formed by growing ferromagnetic particles in a non-magnetic matrix on the substrate In, the ferromagnetic substance is F 1-x M x (F:
Fe, Co, M: Pd, Ir, Pt, 0.35 <x <
0.65) having a CuAu type ordered structure having a composition of
In addition, the B abundance ratio in F 1-x M x is 0.01 to 0.30.
【００１０】本発明の磁気記録媒体の作成方法は、Ｆ
１−ｘＭｘ（Ｆ：Ｆｅ，Ｃｏ，Ｍ：Ｐｄ，Ｉｒ，Ｐｔ，
０．３５＜ｘ＜０．６５）の組成からなるＣｕＡｕ型規
則構造を有し，かつＦ１−ｘＭｘ中のＢ存在率が０．０
１〜０．３０である強磁性体からなる磁気記録層を基体
上（あるいは基体上の下地層上）に形成することを特徴
とする。The method for producing a magnetic recording medium of the present invention is
1-x M x (F: Fe, Co, M: Pd, Ir, Pt,
0.35 <x <0.65) having a CuAu type ordered structure and having a B abundance ratio of 0.0 in F 1-x M x.
A magnetic recording layer made of a ferromagnetic material having a thickness of 1 to 0.30 is formed on a substrate (or an underlayer on the substrate).
【００１１】本発明の磁気記録媒体の作成方法は、Ｆ
１−ｘＭｘ（Ｆ：Ｆｅ，Ｃｏ，Ｍ：Ｐｄ，Ｉｒ，Ｐｔ，
０．３５＜ｘ＜０．６５）の組成からなるＣｕＡｕ型規
則構造を有し，かつＦ１−ｘＭｘ中のＢ存在率が０．０
１〜０．３０である強磁性粒子を非磁性マトリクス中に
含む磁気記録層を基体上（あるいは基体上の下地層上）
に形成することを特徴とする。The magnetic recording medium manufacturing method of the present invention is
1-x M x (F: Fe, Co, M: Pd, Ir, Pt,
0.35 <x <0.65) having a CuAu type ordered structure and having a B abundance ratio of 0.0 in F 1-x M x.
A magnetic recording layer containing ferromagnetic particles of 1 to 0.30 in a non-magnetic matrix is formed on a substrate (or an underlayer on the substrate).
It is characterized in that it is formed.
【００１２】[0012]
【作用及び発明の実施の形態】本発明者は，上記従来技
術が抱える記録状態の熱的および経時的不安定性という
問題を解決するために鋭意検討した結果，Ｆ１−ｘＭｘ
（Ｆ：Ｆｅ，Ｃｏ，Ｍ：Ｐｄ，Ｉｒ，Ｐｔ）の組成から
なるＣｕＡｕ型規則構造の強磁性薄膜あるいはグラニュ
ラ−構造を作製する際，非磁性元素Ｂを所定量添加する
ことにより，磁気特性を劣化させること無く規則化温度
を著しく低減できることを発見した。The present inventor has made earnest studies in order to solve the problems of thermal and temporal instability of the recording state of the above-mentioned prior art, and as a result, F 1-x M x
When a CuAu type ordered structure ferromagnetic thin film or granular structure composed of (F: Fe, Co, M: Pd, Ir, Pt) is produced, by adding a predetermined amount of the non-magnetic element B, the magnetic properties can be improved. It has been discovered that the ordering temperature can be significantly reduced without degrading.
【００１３】これにより，高い結晶磁気異方性のＦ
１−ｘＭｘ規則合金微粒子集合体を，量産化レベルの低
い温度（凡そ４００℃以下）でも合成することが可能に
なった。As a result, F having high magnetocrystalline anisotropy is obtained.
The 1-x M x ordered alloy fine particle aggregates, it has become possible even synthesized mass production levels of low temperature (approximately 400 ° C. or less).
【００１４】上記非磁性元素Ｂの添加量について，磁気
特性を損なわない範囲で規則化温度の低減が顕著に認め
られるのは，Ｆ１−ｘＭｘに対するＢの原子存在比率が
０．０１〜０．３であった。より望ましい比率としては
０．０１〜０．２であり，更に望ましくは０．０２〜
０．２であった。Ｂの添加量がこれより少ない場合は，
規則化温度の低減効果は弱く，過剰の場合には飽和磁化
などの磁気特性が劣化する。Regarding the added amount of the non-magnetic element B, the reduction of the ordering temperature is remarkably recognized within the range where the magnetic properties are not impaired, because the atomic ratio of B to F 1-x M x is 0.01 to. It was 0.3. The more desirable ratio is 0.01 to 0.2, and more desirably 0.02.
It was 0.2. If the amount of B added is less than this,
The effect of reducing the ordering temperature is weak, and when it is excessive, the magnetic properties such as saturation magnetization deteriorate.
【００１５】以上のような少量のＢ添加により，Ｆ
１−ｘＭｘの規則化温度は，無添加の場合に比べ１００
℃以上低減した。By adding a small amount of B as described above, F
The ordering temperature of 1-x M x is 100 compared to the case of no addition.
℃ or more reduced.
【００１６】Ｘ線回折及び電子線回折を用いた精密な構
造解析によれば，Ｂは面心正方晶（ＦＣＴ）構造のＦ
１−ｘＭｘ規則合金格子中に侵入し，しかも正方晶主軸
（ｃ軸）方向を引き伸ばすように侵入型元素として取り
込まれていることが判明した。このようなＢの効果は，
同様の原子半径を有する侵入型元素Ｃには認められず，
全くＢ特有の効果であることがわかった。ちなみに規則
合金格子内でのＢとＣの挙動の違いは，母合金構成元素
に対する混合エンタルピ−の違いにより理解できた。According to a precise structural analysis using X-ray diffraction and electron beam diffraction, B is F of a face-centered tetragonal (FCT) structure.
Penetrates into 1-x M x ordered alloy lattice, yet it is found that incorporated as interstitial element to stretch the tetragonal spindle (c-axis) direction. The effect of B is
Not found in interstitial element C with similar atomic radius,
It turned out that the effect was completely peculiar to B. By the way, the difference in the behavior of B and C in the ordered alloy lattice can be understood by the difference in the mixed enthalpies with respect to the constituent elements of the master alloy.
【００１７】Ｆ１−ｘＭｘ−Ｂの形成法は，成膜法によ
らずいかなる手法によってもＦ１−ｘＭｘ中にＢを混入
させることができれば，所望の効果が得られる。例え
ば，スパッタ法でＦ１−ｘＭｘ合金を形成する際，Ｆ
１−ｘＭｘ合金タ−ゲット上にＢを所定量配置して，ス
パッタすればよい。また、Ｆ１−ｘＭｘを形成後、例え
ば、イオン注入法などによりＢを注入し、その後、熱処
理を行ってもよい。As for the method for forming F 1-x M x -B, the desired effect can be obtained if B can be mixed into F 1-x M x by any method regardless of the film forming method. For example, when forming an F 1-x M x alloy by the sputtering method,
1-x M x alloy data - on Get B disposed a predetermined amount, may be sputtering. In addition, after forming F 1-x M x , B may be implanted by, for example, an ion implantation method, and then heat treatment may be performed.
【００１８】また、もしこの材料を垂直磁気記録媒体に
応用するならば，結晶主軸が主に強磁性粒子層面の法線
方向にあることが好ましい。Further, if this material is applied to a perpendicular magnetic recording medium, it is preferable that the crystal main axis is mainly in the direction normal to the plane of the ferromagnetic particle layer.
【００１９】非磁性マトリクスは炭化物、窒化物、酸化
物またはこれらの混合物からなることが好ましく、より
具体的には、ＳｉＯ２，ＭｇＯ，Ａｌ２Ｏ３，Ｉｎ２Ｏ
３のいずれか１種以上からなることが好ましい。The non-magnetic matrix is preferably made of carbide, nitride, oxide or a mixture thereof, and more specifically, SiO 2 , MgO, Al 2 O 3 and In 2 O.
It is preferable that any one or more of 3 is included.
【００２０】ｘ＝０．３０〜０．６５においてＣｕＡｕ
型規則構造が形成され、さらに熱的、経時的安定性がよ
り一層向上する。CuAu at x = 0.30 to 0.65
A type ordered structure is formed, and the thermal and temporal stability is further improved.
【００２１】磁気記録層の厚さは１００ｎｍ以下が好ま
しく、５０ｎｍ以下がより好ましい。The thickness of the magnetic recording layer is preferably 100 nm or less, more preferably 50 nm or less.
【００２２】基体としては、表面酸化Ｓｉウエハ（〜２
×１０−６／℃）、溶融石英基体（０．４×１０−６／
℃）、ガラス基体（３〜１５×１０−６／℃）、アルミ
ニウム基体等が好適に用いられる。これら基体に５０ｎ
ｍ以下のＦｅＰｔ−Ａｇ／ＳｉＯ２膜を形成熱処理を施
すと、基体の熱膨張係数の小さいものほど規則度及び
（００１）配向の顕著な改善が認められる。これは基体
と膜との熱膨張係数の差により膜が歪み（引張応力）を
受け、この応力の存在により規則度そして配向が向上す
るのではないかと推測される。As the substrate, a surface-oxidized Si wafer (~ 2
× 10 -6 / ℃), fused silica substrates (0.4 × 10 -6 /
C.), glass substrates (3 to 15.times.10.sup.- 6 / .degree. C.), aluminum substrates and the like are preferably used. 50n on these substrates
When the FePt-Ag / SiO 2 film having a thickness of m or less is subjected to the heat treatment for forming, the smaller the coefficient of thermal expansion of the substrate, the more remarkable the degree of order and the (001) orientation are recognized. It is speculated that this is because the film undergoes strain (tensile stress) due to the difference in coefficient of thermal expansion between the substrate and the film, and the presence of this stress improves the order and orientation.
【００２３】また、下地層についても基体の場合と同様
に熱膨張係数の小さいものほど好ましい。下地層として
は、Ｃ、Ｓｉ、酸化物（ＳｉＯ２、ＭｇＯ、Ａｌ２Ｏ３
等）、炭化物（ＳｉＷ、ＷＣ等）、窒化物（ＢＮ
等））、ＮｉＰからなる層であることが好ましい。特に
アルミニウム基板にＮｉＰなどの非晶質下地層を設ける
場合は製造コストの低減を図ることができる。As for the underlayer, the smaller the coefficient of thermal expansion is, the more preferable as in the case of the substrate. As the underlayer, C, Si, oxides (SiO 2 , MgO, Al 2 O 3
Etc.), carbides (SiW, WC, etc.), nitrides (BN
Etc.)), and a layer made of NiP. In particular, when an amorphous underlayer such as NiP is provided on the aluminum substrate, the manufacturing cost can be reduced.
【００２４】磁気特性を劣化させること無く規則化温度
を著しく低減できることを発見した。これにより、高い
結晶磁気異方性のＦ１−ｘＭｘ規則合金薄膜媒体を、量
産化レベルの低い温度で合成することが可能になった。
すなわち、従来は６５０℃以上の温度が必要であった
が、本発明においては、２００〜６００℃の温度におい
ても規則化が達成される。ただ、２００℃未満では条件
によっては良好な規則が達成されない場合がある。２０
０〜６００℃の範囲において、４００℃以下がより好ま
しい。It has been discovered that the ordering temperature can be significantly reduced without degrading the magnetic properties. As a result, it became possible to synthesize an F 1-x M x ordered alloy thin film medium having a high magnetocrystalline anisotropy at a temperature of low mass production level.
That is, conventionally, a temperature of 650 ° C. or higher was required, but in the present invention, ordering is achieved even at a temperature of 200 to 600 ° C. However, if the temperature is lower than 200 ° C, good rules may not be achieved depending on the conditions. 20
In the range of 0 to 600 ° C, 400 ° C or lower is more preferable.
【００２５】本発明の効果は、特に次のような場合に顕
著に現れる。第一は、下地層を介すかあるいは介さない
で基体上にＦ１−ｘＭｘ規則合金膜を形成する場合であ
る。特に膜厚が１００ｎｍ以下と薄い場合に、元素Ｂ添
加による規則化温度の低下は著しい。ここでＦ１−ｘＭ
ｘの規則化は、成長時の基体温度を高くすることによっ
ても実現されるし、不規則相を形成した後の熱処理によ
っても可能である。いずれの場合にも元素Ｂの添加によ
る規則化温度の低下が顕著に認められる。The effects of the present invention are particularly remarkable in the following cases. The first is a case where the F 1-x M x ordered alloy film is formed on the substrate with or without an underlayer. Particularly when the film thickness is as thin as 100 nm or less, the decrease of the ordering temperature due to the addition of the element B is remarkable. Where F 1-x M
The ordering of x can be realized by increasing the temperature of the substrate during growth, or by heat treatment after forming the disordered phase. In any case, the reduction of the ordering temperature due to the addition of the element B is remarkably recognized.
【００２６】本発明の効果が顕著に認められる第二のケ
−スは、Ｆ１−ｘＭｘと非磁性マトリクス材料を同時に
基体上に堆積させる、いわゆるグラニュラ−膜の場合で
ある。この場合には、膜中に元素Ｂを所定量添加すれ
ば、先の例と同様に顕著な規則化温度の低減を実現でき
る。このケ−スでは、磁性合金Ｆ１−ｘＭｘ微粒子が非
磁性マトリクス中に分散した形態となるが、このような
相分離及び規則化を進行させる手段として、上記第一の
場合と同様に成長時の基体加熱あるいは成膜後の熱処理
のいずれをも選択できる。熱処理の温度は、膜の厚さに
もよるが堆積時の基体温度と同様の温度を適用すればよ
い。The second case in which the effect of the present invention is remarkably recognized is the case of a so-called granular film in which F 1-x M x and the non-magnetic matrix material are simultaneously deposited on the substrate. In this case, if the element B is added to the film in a predetermined amount, a remarkable reduction in the ordering temperature can be realized as in the previous example. In this case, the magnetic alloy F 1-x M x fine particles are dispersed in the non-magnetic matrix, and as a means for promoting such phase separation and ordering, as in the first case described above. Either heating of the substrate during growth or heat treatment after film formation can be selected. Although the temperature of the heat treatment depends on the thickness of the film, the same temperature as the substrate temperature during deposition may be applied.
【００２７】本発明の検討中に見出された更に有用かつ
興味深い現象として、元素Ｂの添加によるＦ１−ｘＭｘ
規則合金の優先配向がある。以下にその内容を述べる。
Ｆ１ −ｘＭｘ（Ｆ：Ｆｅ、Ｃｏ、Ｍ：Ｐｄ、Ｉｒ、Ｐ
ｔ）合金は、ｘ〜０．５付近でＣｕＡｕ型規則構造をと
る。この時にＦ、Ｍがランダムに配列した面心立方構造
（ｆｃｃ）の不規則相から、一軸方向に伸縮した面心正
方構造（ｆｃｔ）の規則相に規則−不規則変態を起こ
す。この伸縮した結晶軸方向（［００１］方向）には、
一原子層毎にＦとＭが交互に積層されたいわゆる原子レ
ベルでの超格子が形成される。As a further useful and interesting phenomenon found during the study of the present invention, the addition of the element B, F 1-x M x
There is a preferred orientation of ordered alloys. The contents are described below.
F 1 −x M x (F: Fe, Co, M: Pd, Ir, P
The t) alloy has a CuAu type ordered structure in the vicinity of x to 0.5. At this time, a regular-irregular transformation occurs from the disordered phase of the face-centered cubic structure (fcc) in which F and M are randomly arranged to the ordered phase of the face-centered tetragonal structure (fct) expanded and contracted in the uniaxial direction. In this crystallographic axis direction ([001] direction) that has expanded and contracted,
A so-called atomic level superlattice in which F and M are alternately stacked for each atomic layer is formed.
【００２８】このような原子配列の異方性は、一般に極
めて強い磁気異方性を生み出す。従って、Ｆ１−ｘＭｘ
規則合金微粒子の結晶軸の配向状態は磁気特性を支配す
るため、結晶配向の制御は極めて重要な課題となる。Ｆ
ｅＰｔあるいはＣｏＰｔ規則合金などを例にとれば、
［００１］が磁化容易軸となり、その磁気エネルギ−は
１０７ｅｒｇ／ｃｃ台にも達する。今回我々が新たに見
出した現象は、少量の非磁性Ｂの添加により、特に膜厚
５０ｎｍという薄い領域において、前記二つのケ−スい
ずれの場合にも、ほぼ理想に近いｆｃｔ（００１）配向
が実現されることである。つまりｆｃｔ［００１］軸は
膜面法線方向に向き、その結果面直方向に強い磁気異方
性が現れる。Such anisotropy of atomic arrangement generally produces extremely strong magnetic anisotropy. Therefore, F 1-x M x
Since the orientation state of the crystal axis of the ordered alloy fine particles governs the magnetic properties, controlling the crystal orientation is an extremely important issue. F
Taking ePt or CoPt ordered alloy as an example,
[001] is the axis of easy magnetization, and its magnetic energy reaches the order of 10 7 erg / cc. The phenomenon newly found by us this time is that the addition of a small amount of non-magnetic B causes the fct (001) orientation to be almost ideal in both cases, especially in a thin region of 50 nm. It will be realized. That is, the fct [001] axis is oriented in the direction normal to the film surface, and as a result, strong magnetic anisotropy appears in the direction perpendicular to the surface.
【００２９】例えば、ＦｅＰｔやＣｏＰｔ規則合金など
ではほぼ理想的な垂直磁化膜となり、垂直磁気記録にも
好適な材料となる。For example, FePt, CoPt ordered alloy, or the like is a nearly ideal perpendicular magnetization film, and is also a material suitable for perpendicular magnetic recording.
【００３０】[0030]
【実施例】以下，本発明を実施例により説明する。EXAMPLES The present invention will be described below with reference to examples.
【００３１】［実施例１］Ｂチップを配置したＣｏ−５
０ａｔ．％Ｐｔタ−ゲットをスパッタリングし，溶融石
英基板上に全体膜厚が約４０ｎｍとなるよう同時堆積し
た。その後，１×１０−６ Ｔｏｒｒ以下の真空中で３
５０℃で０．５時間熱処理をおこなった。膜中のＢの原
子含有率Ｒは光電子分光法（ＸＰＳ）により決定し，Ｒ
を０．０１〜０．３の範囲で変化させた。結晶構造及び
規則化パラメタ−ＳはＸ線回折から決定した。磁気特性
はＳＱＵＩＤ（最大印加磁場９Ｔ）により測定した。測
定結果を表１にまとめる。表中，Ｓは規則化度の尺度で
ある規則化パラメタ−を，Ｈｃは保磁力を示す。[Example 1] Co-5 in which B chip is arranged
0 at. % Pt target was sputtered and co-deposited on the fused quartz substrate so that the total film thickness was about 40 nm. Then, in a vacuum of 1 × 10 −6 Torr or less, 3
Heat treatment was performed at 50 ° C. for 0.5 hours. The atomic content R of B in the film is determined by photoelectron spectroscopy (XPS), and R
Was varied in the range of 0.01 to 0.3. Crystal structure and ordering parameter-S were determined from X-ray diffraction. The magnetic characteristics were measured by SQUID (maximum applied magnetic field 9T). The measurement results are summarized in Table 1. In the table, S indicates a regularization parameter, which is a measure of the regularization degree, and Hc indicates a coercive force.
【００３２】［実施例２］Ｂチップを配置したＦｅ−５
０ａｔ．％Ｐｔタ−ゲットをスパッタリングし，溶融石
英基板上に全体膜厚が約５０ｎｍとなるよう同時堆積し
た。その後，１×１０−６Ｔｏｒｒ以下の真空中で３５
０℃で０．５時間熱処理をおこなった。 膜中のＢの原
子含有率Ｒは光電子分光法（ＸＰＳ）により決定し，Ｒ
を０〜０．３５の範囲で変化させた。結晶構造及び規則
化度はＸ線回折から決定した。磁気特性はＳＱＵＩＤ
（最大印加磁場９Ｔ）により測定した。測定結果を表２
にまとめる。表中，Ｓは規則化度の尺度である規則化パ
ラメタ−を，Ｈｃは保磁力を示す。Example 2 Fe-5 with B Chip Arranged
0 at. % Pt target was sputtered and co-deposited on the fused silica substrate to a total film thickness of about 50 nm. Then, in a vacuum of 1 × 10 −6 Torr or less, 35
Heat treatment was performed at 0 ° C. for 0.5 hours. The atomic content R of B in the film is determined by photoelectron spectroscopy (XPS), and R
Was varied in the range of 0 to 0.35. The crystal structure and the degree of ordering were determined by X-ray diffraction. Magnetic property is SQUID
(Maximum applied magnetic field 9T). Table 2 shows the measurement results
Put together. In the table, S indicates a regularization parameter, which is a measure of the regularization degree, and Hc indicates a coercive force.
【００３３】［比較例１］実施例１と同様の条件下で，
Ｒを０〜０．０１の範囲で変化させた。[Comparative Example 1] Under the same conditions as in Example 1,
R was changed in the range of 0 to 0.01.
【００３４】［比較例２］実施例１と同様の条件下で，
Ｒを０．３〜０．５の範囲で変化させた。ただし，この
場合はＣｏ−５０ａｔ．％Ｐｔチップを配置したＢタ−
ゲットを用いた。Comparative Example 2 Under the same conditions as in Example 1,
R was changed in the range of 0.3 to 0.5. However, in this case, Co-50 at. % B with% Pt chip
I used a get.
【００３５】［比較例３］Ｃチップを配置したＣｏ−５
０ａｔ．％Ｐｔタ−ゲットをスパッタリングし，溶融石
英基板上に全体膜厚が約４０ｎｍとなるよう同時堆積し
た。Ｒを０．０１〜０．１の範囲で変化させた。[Comparative Example 3] Co-5 with C chip arranged
0 at. % Pt target was sputtered and co-deposited on the fused quartz substrate so that the total film thickness was about 40 nm. R was changed in the range of 0.01 to 0.1.
【００３６】[0036]
【表１】 [Table 1]
【００３７】[0037]
【表２】 [Table 2]
【００３８】[0038]
【発明の効果】本発明によれば、磁気特性を劣化させる
こと無く規則化温度を著しく低減できる。According to the present invention, the ordering temperature can be remarkably reduced without deteriorating the magnetic characteristics.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5D006 BB01 BB06 BB07 EA03 EA05 FA00 5D112 AA03 AA05 BA02 BA03 BA04 BA06 BB01 BB02 BB05 FA04 GB01 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 5D006 BB01 BB06 BB07 EA03 EA05 FA00 5D112 AA03 AA05 BA02 BA03 BA04 BA06 BB01 BB02 BB05 FA04 GB01
Claims (17)
形成された強磁性薄膜，または強磁性粒子からなる強磁
性粒子層、または基体上の非磁性マトリクス中に強磁性
粒子が成長してなる強磁性粒子層を有する磁気記録媒体
において、 強磁性体がＦ１−ｘＭｘ（Ｆ：Ｆｅ，Ｃｏ，Ｍ：Ｐｄ，
Ｉｒ，Ｐｔ，０．３５＜ｘ＜０．６５）の組成からなる
ＣｕＡｕ型規則構造を有し，かつＦ１−ｘＭｘ中のＢ存
在率が０．０１〜０．３０であることを特徴とする磁気
記録媒体。1. A ferromagnetic thin film formed on a substrate (or an underlayer on a substrate), a ferromagnetic particle layer made of ferromagnetic particles, or a ferromagnetic particle grown in a non-magnetic matrix on a substrate. In a magnetic recording medium having a ferromagnetic particle layer formed by the method, the ferromagnetic material is F1 - xMx (F: Fe, Co, M: Pd,
Ir, Pt, having a CuAu type ordered structure composed of 0.35 <x <0.65), and having a B abundance ratio in F 1-x M x of 0.01 to 0.30. Characteristic magnetic recording medium.
が０．０１〜０．２０の範囲にあることを特徴とする請
求項１記載の磁気記録媒体。2. The magnetic recording medium according to claim 1, wherein the atomic abundance of B in F 1-x M x is in the range of 0.01 to 0.20.
が０．０２〜０．２０の範囲にあることを特徴とする請
求項１記載の磁気記録媒体。3. The magnetic recording medium according to claim 1, wherein the atomic abundance of B in F 1-x M x is in the range of 0.02 to 0.20.
を特徴とする請求項１ないし３のいずれか１項に記載の
磁気記録媒体。4. The magnetic recording medium according to claim 1, wherein the crystal main axis is mainly in the direction normal to the film surface.
物、酸化物またはこれらの混合物からなることを特徴と
する請求項１ないし４のいずれか１項に記載の磁気記録
媒体。5. The magnetic recording medium according to claim 1, wherein the non-magnetic matrix is made of carbide, nitride, oxide, or a mixture thereof.
Ｏ，Ａｌ２Ｏ３，Ｉｎ２Ｏ３のいずれか１種以上からな
ることを特徴とする請求項５記載の磁気記録媒体。6. The non-magnetic matrix is SiO 2 , Mg
6. The magnetic recording medium according to claim 5, comprising at least one of O, Al 2 O 3 and In 2 O 3 .
下であることを特徴とする請求項１ないし６のいずれか
１項に記載の磁気記録媒体。7. The magnetic recording medium according to claim 1, wherein the ferromagnetic particle layer has a thickness of 100 nm or less.
石英基体、ガラス基体，アルミニウム基体であることを
特徴とする請求項１ないし７のいずれか１項に記載の磁
気記録媒体。8. The magnetic recording medium according to claim 1, wherein the substrate is a surface-oxidized Si wafer, a fused silica substrate, a glass substrate, or an aluminum substrate.
ｉ、酸化物、炭化物、窒化物からなる層であることを特
徴とする請求項１ないし８のいずれか１項に記載の磁気
記録媒体。9. The underlayer is Ni-based amorphous, C, S
9. The magnetic recording medium according to claim 1, which is a layer made of i, oxide, carbide, and nitride.
Ｐｄ，Ｉｒ，Ｐｔ，０．３５＜ｘ＜０．６５）の組成か
らなるＣｕＡｕ型規則構造を有し，かつＦ１ −ｘＭｘ中
のＢ存在率が０．０１〜０．３０である強磁性薄膜から
なる磁気記録層を基体上（あるいは基体上の下地層上）
に形成することを特徴とする磁気記録媒体の作成方法。10. F 1-x M x (F: Fe, Co, M:
Pd, Ir, Pt, having a CuAu type ordered structure composed of 0.35 <x <0.65), and having a B abundance rate of 0.01 to 0.30 in F 1 -xM x. A magnetic recording layer consisting of a ferromagnetic thin film on the substrate (or on the underlying layer on the substrate)
A method for producing a magnetic recording medium, which comprises:
Ｐｄ，Ｉｒ，Ｐｔ，０．３５＜ｘ＜０．６５）の組成か
らなるＣｕＡｕ型規則構造を有し，かつＦ１ −ｘＭｘ中
のＢ存在率が０．０１〜０．３０である強磁性体を非磁
性マトリクス中に含む磁気記録層を基体上（あるいは基
体上の下地層上）に形成することを特徴とする磁気記録
媒体の作成方法。11. F 1-x M x (F: Fe, Co, M:
Pd, Ir, Pt, having a CuAu type ordered structure composed of 0.35 <x <0.65), and having a B abundance rate of 0.01 to 0.30 in F 1 -xM x. A method for producing a magnetic recording medium, comprising forming a magnetic recording layer containing a ferromagnetic material in a non-magnetic matrix on a substrate (or on an underlayer on the substrate).
リクス材料を同時に基体上に堆積させることを特徴とす
る請求項１１記載の磁気記録媒体の製造方法。12. The method of manufacturing a magnetic recording medium according to claim 11, wherein the F 1-x M x material, B and the non-magnetic matrix material are simultaneously deposited on the substrate.
１−ｘＭｘ膜に添加することを特徴とする請求項１１記
載の磁気記録媒体の作成方法。13. An F 1-x M x film is formed, and then B is added to the F 1-x M x film.
The method for producing a magnetic recording medium according to claim 11, wherein the 1-x M x film is added.
前記磁気記録層の形成を行うことを特徴とする請求項１
０ないし１３のいずれか１項記載の磁気記録媒体の製造
方法。14. The magnetic recording layer is formed at a substrate temperature of 200 ° C. to 600 ° C.
14. The method for manufacturing a magnetic recording medium according to any one of 0 to 13.
気記録層の形成を行うことを特徴とする請求項１０ない
し１３のいずれか１項記載の磁気記録媒体の製造方法。15. The method of manufacturing a magnetic recording medium according to claim 10, wherein the magnetic recording layer is formed at a substrate temperature of 400 ° C. or lower.
０℃で熱処理を行うことを特徴とする請求項１０ないし
１３のいずれか１項に記載の磁気記録媒体の作成方法。16. After the magnetic recording layer is formed, 200 ° C. to 60 ° C.
The method for producing a magnetic recording medium according to claim 10, wherein heat treatment is performed at 0 ° C. 14.
熱処理を行うことを特徴とする請求項１０ないし１３の
いずれか１項記載の磁気記録媒体の製造方法。17. The method for manufacturing a magnetic recording medium according to claim 10, wherein after the formation of the magnetic recording layer, heat treatment is performed at 400 ° C. or lower.
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|---|---|---|---|---|
| WO2003049085A1 (en) * | 2001-12-03 | 2003-06-12 | Hitachi Maxell, Ltd. | Magnetic recording medium, its manufacturing method, and magnetic recorder |
| JP2005056489A (en) * | 2003-08-04 | 2005-03-03 | Fuji Photo Film Co Ltd | Magnetic recording medium |
| JP2008192275A (en) * | 2006-09-21 | 2008-08-21 | Canon Inc | Magnetic recording medium and method of manufacturing the same |
| US7470308B2 (en) | 2004-02-10 | 2008-12-30 | Fujifilm Corporation | Method of producing magnetic particles and reaction method using microreactor and microreactor |
| US7544230B2 (en) | 2003-03-05 | 2009-06-09 | Fujifilm Corporation | Method of manufacturing magnetic particle, magnetic particle and magnetic recording medium |
| US10062404B2 (en) | 2014-05-12 | 2018-08-28 | Fuji Electric Co., Ltd. | Method for manufacturing perpendicular magnetic recording medium |
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| US10062404B2 (en) | 2014-05-12 | 2018-08-28 | Fuji Electric Co., Ltd. | Method for manufacturing perpendicular magnetic recording medium |
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