JP2001059158A - Vacuum evaporation equipment - Google Patents
Vacuum evaporation equipmentInfo
- Publication number
- JP2001059158A JP2001059158A JP11232730A JP23273099A JP2001059158A JP 2001059158 A JP2001059158 A JP 2001059158A JP 11232730 A JP11232730 A JP 11232730A JP 23273099 A JP23273099 A JP 23273099A JP 2001059158 A JP2001059158 A JP 2001059158A
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- Japan
- Prior art keywords
- vapor
- metal
- vapor pressure
- shielding plates
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は真空蒸着装置に係
り、特に蒸気圧の異なる複数の金属の層を均一成分比お
よび均一厚さで広い幅で形成可能な真空蒸着装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum deposition apparatus, and more particularly to a vacuum deposition apparatus capable of forming a plurality of metal layers having different vapor pressures with a uniform component ratio and a uniform thickness over a wide width.
【０００２】[0002]
【従来の技術】高周波数信号を磁気的に記録するために
垂直磁気記録媒体が適用されるが、垂直磁気記録媒体と
しては高分子フィルム上にコバルト（Ｃo ）とクロム
（Ｃr ）を主成分とする磁性層を真空蒸着により形成し
た磁気テープが使用される。しかし、コバルトとクロム
は蒸気圧が大幅に相違するため、単一の蒸発源を使用す
る真空蒸着装置では長尺にわたって均一成分比かつ均一
厚さの磁性層を形成することが困難である。2. Description of the Related Art A perpendicular magnetic recording medium is applied for magnetically recording a high frequency signal. As a perpendicular magnetic recording medium, cobalt (Co) and chromium (Cr) are mainly composed on a polymer film. A magnetic tape having a magnetic layer formed by vacuum evaporation is used. However, since the vapor pressures of cobalt and chromium are greatly different, it is difficult to form a magnetic layer having a uniform component ratio and a uniform thickness over a long length with a vacuum evaporation apparatus using a single evaporation source.
【０００３】この課題を解決するために、複数の蒸発源
を使用する真空蒸着装置が提案されているが、各蒸発源
から蒸発した原子が均一に混合されないため、長尺にわ
たって均一成分比の磁性層を形成することは困難であ
る。そこで、コバルトとクロムを予め所定の比率で含む
合金として、坩堝に連続的に供給する真空蒸着装置が提
案されている（特開昭６１−２８００２７号公報参
照）。In order to solve this problem, a vacuum evaporation apparatus using a plurality of evaporation sources has been proposed. However, since atoms evaporated from each evaporation source are not uniformly mixed, a magnetic element having a uniform component ratio over a long area is proposed. It is difficult to form a layer. Therefore, there has been proposed a vacuum vapor deposition apparatus that continuously supplies cobalt and chromium to a crucible as an alloy containing a predetermined ratio in advance (see JP-A-61-280027).
【０００４】さらに、坩堝の長さ方向に先細となるガイ
ドからコバルトとクロムの合金粒を供給する真空蒸着装
置が提案されている（特開昭６３−０５８６２２号公報
参照）。Further, there has been proposed a vacuum deposition apparatus for supplying alloy particles of cobalt and chromium from a guide tapering in the length direction of the crucible (see Japanese Patent Application Laid-Open No. 63-058622).
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記装
置では蒸着層の成分比を均一に保つために蒸着面の直前
面に遮蔽板を設ける必要があるが、遮蔽板を設けた場合
には、蒸発原子の大部分が遮蔽板に蒸着してしまうので
効率が悪化するだけでなく、原子が蒸着した遮蔽板は廃
材となるため廃棄物が増加してしまう。However, in the above apparatus, it is necessary to provide a shielding plate immediately before the deposition surface in order to keep the component ratio of the deposited layer uniform. Not only does the efficiency deteriorate because most of the atoms are vapor-deposited on the shielding plate, but also the shielding plate on which the atoms are vapor-deposited becomes waste material, thereby increasing waste.
【０００６】本発明は上記課題に鑑みなされたものであ
って、均一成分比かつ均一厚さの蒸着層を広範囲に形成
することのできる真空蒸着装置を提供することを目的と
する。The present invention has been made in view of the above problems, and has as its object to provide a vacuum deposition apparatus capable of forming a deposition layer having a uniform component ratio and a uniform thickness over a wide range.
【０００７】[0007]
【課題を解決するための手段】第１の発明に係る真空蒸
着装置は、第１の金属材を溶融状態で貯蔵する坩堝の直
上方に相互に隙間を介して略水平に設置される一対の遮
蔽板と、遮蔽板の上方から前記遮蔽板の隙間を介して第
１の金属材の蒸気圧より高い蒸気圧を有する第２の金属
材を第１の金属材の溶融部に供給する少なくとも１つの
高蒸気圧金属供給手段と、を具備する。According to a first aspect of the present invention, there is provided a vacuum evaporation apparatus comprising: a pair of substantially horizontal crucibles disposed horizontally above each other directly above a crucible for storing a first metal material in a molten state; At least one of a shield plate and a second metal material having a higher vapor pressure than the vapor pressure of the first metal material supplied from above the shield plate to the molten portion of the first metal material through a gap between the shield plates; And two high vapor pressure metal supply means.
【０００８】本発明にあっては、坩堝内の第１の金属材
の溶融部で第２の金属材が蒸発するので金属蒸気の成分
比はほぼ一定に維持されるとともに、不要な金属蒸気は
遮蔽材によって遮蔽される。第２の発明に係る真空蒸着
装置は、一対の遮蔽板の隙間を調整する隙間調整手段を
さらに具備する。In the present invention, since the second metal material evaporates in the melting portion of the first metal material in the crucible, the component ratio of the metal vapor is maintained substantially constant, and unnecessary metal vapor is removed. Shielded by shielding material. The vacuum evaporation apparatus according to the second invention further includes a gap adjusting means for adjusting a gap between the pair of shielding plates.
【０００９】本発明にあっては、第２の金属が第１の金
属の溶融部に確実に供給されるように、第１および第２
の金属材の成分に応じて遮蔽板の隙間が調整される。第
３の発明に係る真空蒸着装置は、３つの高蒸気圧金属供
給手段が、一対の遮蔽板の隙間に沿って隙間の一端から
１／４、１／２、および３／４の位置に配置される。In the present invention, the first and the second metal are supplied so that the second metal is reliably supplied to the molten portion of the first metal.
The gap between the shielding plates is adjusted according to the components of the metal material. In the vacuum vapor deposition apparatus according to the third invention, three high vapor pressure metal supply means are arranged along the gap between the pair of shielding plates at positions 1/4, 1/2, and 3/4 from one end of the gap. Is done.
【００１０】本発明にあっては、３つの高蒸気圧金属供
給手段は所定の間隔で配置され、金属蒸気の成分比はほ
ぼ一定に維持される。第３の発明に係る真空蒸着装置
は、坩堝から一対の遮蔽板の隙間を介して上昇する金属
蒸気の密度を計測する蒸気密度計測手段と、蒸気密度計
測手段で計測された金属蒸気の密度に基づいて高蒸気圧
金属供給手段による第２の金属材の供給量を制御する高
蒸気圧金属供給量制御手段と、をさらに具備する。In the present invention, the three high vapor pressure metal supply means are arranged at a predetermined interval, and the component ratio of the metal vapor is maintained substantially constant. A vacuum evaporation apparatus according to a third aspect of the present invention includes a vapor density measurement unit that measures the density of metal vapor rising from a crucible through a gap between a pair of shielding plates, and a metal vapor density measured by the vapor density measurement unit. And a high vapor pressure metal supply control means for controlling the supply amount of the second metal material by the high vapor pressure metal supply means based on the high vapor pressure metal supply means.
【００１１】本発明にあっては、金属蒸気の密度の計測
結果に応じて第２の金属材の供給量が制御され、金属蒸
気の成分比が所定比に制御される。In the present invention, the supply amount of the second metal material is controlled according to the measurement result of the density of the metal vapor, and the component ratio of the metal vapor is controlled to a predetermined ratio.
【００１２】[0012]
【発明の実施の形態】図１は本発明に係る真空蒸着装置
の第１の実施形態の正面断面図であって、真空箱１と真
空箱１内の空気を排出する排気装置１０で構成される。
真空箱１の上部には蒸着部１１が、真空箱１の下部には
金属蒸気発生部１２が配置される。FIG. 1 is a front sectional view of a first embodiment of a vacuum deposition apparatus according to the present invention, which comprises a vacuum box 1 and an exhaust device 10 for discharging air from the vacuum box 1. FIG. You.
A vapor deposition unit 11 is arranged above the vacuum box 1, and a metal vapor generation unit 12 is arranged below the vacuum box 1.
【００１３】蒸着部１１は真空箱１の中央に配置された
円筒状のキャン１１１、キャン１１１の横方向に第１お
よび第２のフリーローラ１１２および１１３を挟んで配
置されたフィルム送り出しローラ１１４およびフィルム
巻き取りローラ１１５によって構成される。そして、フ
ィルム送り出しローラ１１４から送り出されるフィルム
１１６は、第１のフリーローラ１１２を介してキャン１
１１の下側を通過し、第２のフリーローラ１１３を介し
て巻き取りローラ１１５に巻き取られる。即ち、フィル
ム１１６の下面が金属蒸気発生部１２に曝される。The vapor deposition section 11 includes a cylindrical can 111 disposed in the center of the vacuum box 1, a film feed roller 114 disposed in the lateral direction of the can 111 with first and second free rollers 112 and 113 interposed therebetween, and It is constituted by a film take-up roller 115. Then, the film 116 fed from the film feed roller 114 is fed through the first free roller 112 to the can 1.
11 and is taken up by a take-up roller 115 via a second free roller 113. That is, the lower surface of the film 116 is exposed to the metal vapor generator 12.
【００１４】金属蒸気発生部１２の中央下部には、坩堝
１２１が設置される。そして、坩堝１２１の直上には調
整機構１２２により隙間を調整することの可能な遮蔽板
１２３が設置される。なお、遮蔽板１２３はタングステ
ン（Ｗ）、炭素（Ｃ）等の低蒸気圧かつ高融点の材質を
使用して製作する。金属蒸気発生部１２には、さらに、
低蒸気圧金属１２０を収納する坩堝１２１の中央部に高
蒸気圧金属を主成分とする合金ワイヤ１２４を供給する
ための合金ワイヤ供給ドラム１２５、坩堝１２１の中央
部を照射する電子ビーム１２６を発生する電子銃１２
７、および坩堝１２１の中央部を撮影可能なモニタカメ
ラ１２８が設置される。A crucible 121 is provided at the lower center of the metal vapor generating section 12. Then, a shielding plate 123 whose gap can be adjusted by the adjusting mechanism 122 is provided directly above the crucible 121. The shielding plate 123 is manufactured using a material having a low vapor pressure and a high melting point, such as tungsten (W) or carbon (C). The metal vapor generator 12 further includes:
An alloy wire supply drum 125 for supplying an alloy wire 124 composed mainly of a high vapor pressure metal to a central portion of a crucible 121 containing a low vapor pressure metal 120, and an electron beam 126 for irradiating the central portion of the crucible 121. Electron gun 12
7, and a monitor camera 128 capable of photographing the central portion of the crucible 121 are provided.
【００１５】坩堝１２１内の低蒸気圧金属１２０の中心
部は電子銃１２７から発射される電子ビーム１２６によ
って照射されて溶融部Ｍが形成されるが、溶融部Ｍの周
囲には溶融金属が対流する対流部Ｃが存在する。図２は
金属蒸気の発生状況説明図（その１）であって、（イ）
は合金ワイヤ１２４の溶融物が坩堝１２１の対流部Ｃに
滴下する様子を示す。なお、実線は低蒸気圧金属１２０
の蒸発の発生方向を、破線は合金ワイヤ１２４の蒸気の
発生方向を表す。A central portion of the low vapor pressure metal 120 in the crucible 121 is irradiated with an electron beam 126 emitted from an electron gun 127 to form a molten portion M. The molten metal is convected around the molten portion M. A convection section C exists. FIG. 2 is a diagram (part 1) illustrating the state of generation of metal vapor.
Shows a state in which the melt of the alloy wire 124 is dropped onto the convection section C of the crucible 121. The solid line indicates the low vapor pressure metal 120.
The dashed line indicates the direction in which the vapor of the alloy wire 124 is generated.
【００１６】（ロ）は高圧蒸気圧金属蒸気の分布図であ
って、坩堝１２１の中心軸の右半分の分布を示す。この
図から判るように、合金ワイヤ１２４は坩堝１２１の中
心から偏倚した位置から蒸発するため、高圧蒸気圧金属
蒸気は横方向に偏平して分布する。図３は金属蒸気の発
生状況説明図（その２）であって、（ハ）は合金ワイヤ
１２４の溶融物が坩堝１２１の溶融部Ｍに滴下する様子
を示す。なお、実線は低蒸気圧金属１２０の蒸発の発生
方向を、破線は合金ワイヤ１２４の蒸気の発生方向を表
す。(B) is a distribution diagram of the high-pressure vapor pressure metal vapor, showing the distribution of the right half of the central axis of the crucible 121. As can be seen from this figure, since the alloy wire 124 evaporates from a position offset from the center of the crucible 121, the high-pressure vapor-pressure metal vapor is distributed flat in the lateral direction. FIG. 3 is a diagram (part 2) illustrating the state of generation of metal vapor. FIG. 3 (c) shows a state in which the molten material of the alloy wire 124 is dropped onto the melting portion M of the crucible 121. The solid line indicates the direction in which the low vapor pressure metal 120 evaporates, and the dashed line indicates the direction in which the alloy wire 124 generates steam.
【００１７】（ニ）は高圧蒸気圧金属蒸気の分布図であ
って、坩堝１２１の中心軸の右半分の分布を示す。この
図から判るように、合金ワイヤ１２４は坩堝１２１の中
心から蒸発するため、高圧蒸気圧金属蒸気は各方向にほ
ぼ一様に分布する。なお、低圧蒸気圧金属蒸気は坩堝の
中心部から蒸発するため図３の（ニ）とほぼ同一の分布
となる。(D) is a distribution diagram of the high-pressure vapor pressure metal vapor, showing the distribution of the right half of the central axis of the crucible 121. As can be seen from this figure, since the alloy wire 124 evaporates from the center of the crucible 121, the high-pressure vapor pressure metal vapor is distributed almost uniformly in each direction. Since the low-pressure vapor pressure metal vapor evaporates from the center of the crucible, the distribution is almost the same as that shown in FIG.
【００１８】従って、坩堝１２１の中心部である溶融部
Ｍで高圧蒸気圧金属を蒸発させることによって、金属蒸
気の成分比は各方向で一定に維持することが可能とな
る。このために、合金ワイヤ１２４の先端が溶融部Ｍの
直上にくるように調整機構１２２によって遮蔽板１２３
間の隙間を調整すればよい。上記は合金ワイヤ１２４を
坩堝１２１の溶融部Ｍに直接挿入した場合について説明
したが、低蒸気圧金属１２０および合金ワイヤ１２４の
成分によっては、合金ワイヤ１２４は溶融部Ｍに到達す
る前に溶融した低蒸気圧金属１２０の輻射熱によって溶
融する場合もある。Therefore, by evaporating the high-pressure vapor pressure metal in the melting portion M, which is the central portion of the crucible 121, the component ratio of the metal vapor can be kept constant in each direction. For this reason, the shielding plate 123 is adjusted by the adjusting mechanism 122 so that the tip of the alloy wire 124 is located immediately above the molten portion M.
The gap between them may be adjusted. Although the case where the alloy wire 124 is directly inserted into the melting portion M of the crucible 121 has been described above, depending on the components of the low vapor pressure metal 120 and the alloy wire 124, the alloy wire 124 is melted before reaching the melting portion M. The low vapor pressure metal 120 may be melted by radiant heat.
【００１９】この場合は、調整機構１２２により遮蔽板
１２３の隙間を調整して、遮蔽板１２３上で液化した金
属が遮蔽板１２３上を流れ、溶融部Ｍに滴下するように
すればよい。なお、溶融部Ｍへの滴下を確実にするため
に、遮蔽板１２３は溶融部Ｍで谷を形成するようにゆる
やかに傾斜させることが望ましい。以上説明したよう
に、本発明に係る真空蒸着装置によれば、高蒸気圧金属
が低蒸気圧金属の溶融部で蒸発するように遮蔽板１２３
の間隔を調整することにより、高蒸気圧金属および低蒸
気圧金属の成分比が所定比である蒸気のみが蒸着部１１
に送られて、キャン１１１に巻き付けられたフィルム１
１６の下面に蒸着する。In this case, the gap between the shielding plates 123 may be adjusted by the adjusting mechanism 122 so that the metal liquefied on the shielding plates 123 flows on the shielding plates 123 and drops on the molten portion M. It is desirable that the shielding plate 123 be gently inclined so as to form a valley in the fusion zone M, in order to ensure that the droplet is dropped on the fusion zone M. As described above, according to the vacuum evaporation apparatus according to the present invention, the shielding plate 123 is formed so that the high vapor pressure metal evaporates in the molten portion of the low vapor pressure metal.
Is adjusted, only the vapor having a high vapor pressure metal and a low vapor pressure metal component ratio at a predetermined ratio is deposited.
Is sent to the film 111 and wound around the can 111
16 is deposited on the lower surface.
【００２０】さらに、遮蔽板１２３は、坩堝から発生す
る金属蒸気のうち、溶融部Ｍからほぼ鉛直に上昇する金
属蒸気だけがフィルム１１６に蒸着することを許容し、
フィルムの移動方向に拡散した蒸気がフィルム１１６に
蒸着することを防止する機能も果たす。これにより、フ
ィルム１１６面に鉛直に金属が蒸着すること、成分比の
ばらつきが大きい金属蒸気が蒸着することが防止され
る。Further, the shielding plate 123 allows only the metal vapor, which rises almost vertically from the melting portion M, of the metal vapor generated from the crucible to be deposited on the film 116,
It also has a function of preventing vapor diffused in the moving direction of the film from being deposited on the film 116. This prevents deposition of metal vertically on the surface of the film 116 and deposition of metal vapor having a large component ratio variation.
【００２１】なお、溶融部Ｍの様子はモニタカメラ１２
８で撮影して、例えばＣＲＴである表示装置（図示せ
ず）に表示して観察することができる。図４は本発明に
係る真空蒸着装置の第２の実施形態の正面断面図であっ
て、フィルム１１６の幅が広い場合に適用する。第２の
実施形態においては、坩堝１２１は直方体形状であり、
遮蔽板１２３は坩堝１２１の長手方向に沿って設置され
る。そして、合金ワイヤ供給ドラム１２５も坩堝１２１
の長手方向に沿って複数個（図４では３個）配置され、
合金ワイヤ１２４が複数本坩堝１２１に向けて挿入され
る。The state of the fusion zone M is indicated by the monitor camera 12.
The image can be photographed at 8 and displayed on a display device (not shown), for example, a CRT, for observation. FIG. 4 is a front sectional view of a second embodiment of the vacuum deposition apparatus according to the present invention, and is applied to a case where the width of the film 116 is large. In the second embodiment, the crucible 121 has a rectangular parallelepiped shape,
The shielding plate 123 is installed along the longitudinal direction of the crucible 121. And, the alloy wire supply drum 125 is also a crucible 121.
A plurality (three in FIG. 4) are arranged along the longitudinal direction of
A plurality of alloy wires 124 are inserted toward crucible 121.
【００２２】金属蒸気は遮蔽板１２３の隙間から上昇す
るが、金属蒸気の流路を横切るようにレーザ吸光式蒸気
密度計が合金ワイヤ供給ドラム１２５に対応した台数
（図４では３台）設置される。即ち、金属蒸気の流路の
両側に、レーザ４１および光電子増倍管４２で構成され
るレーザ吸光式蒸気密度計が合金ワイヤ供給ドラム１２
５に対応した台数設置される。Although the metal vapor rises from the gap of the shielding plate 123, the number of laser absorption type vapor density meters corresponding to the alloy wire supply drum 125 (three in FIG. 4) is installed so as to cross the flow path of the metal vapor. You. That is, a laser absorption type vapor density meter composed of a laser 41 and a photomultiplier tube 42 is provided on both sides of the metal vapor flow path.
The number corresponding to 5 is installed.
【００２３】そして、レーザ吸光式蒸気密度計の出力で
ある金属蒸気の密度が予め設定された値となるように、
合金ワイヤ供給ドラム１２５から送りだされる合金ワイ
ヤ１２４の供給量を制御する。なお、レーザ吸光式蒸気
密度計を３台設置する場合には、坩堝１２１の長手方向
の長さをＬとしたとき、一方端からＬ／４，Ｌ／２，３
Ｌ／４の位置に設置することが望ましい。これは、図２
（ロ）および図３（ニ）に示す高蒸気圧金属蒸気の分布
解析において高蒸気圧金属蒸気の分布の長手方向の最大
偏倚はＬ／４程度であることが判明したので、Ｌ／４間
隔で高蒸気圧金属を供給すれば成分比はほぼ一定に維持
できるからである。Then, the density of the metal vapor, which is the output of the laser absorption type vapor density meter, becomes a predetermined value.
The supply amount of the alloy wire 124 sent out from the alloy wire supply drum 125 is controlled. When three laser absorption type vapor density meters are installed, the length in the longitudinal direction of the crucible 121 is L, and L / 4, L / 2, 3 from one end.
It is desirable to install at the position of L / 4. This is shown in FIG.
In the distribution analysis of the high vapor pressure metal vapor shown in (b) and FIG. 3 (d), it was found that the maximum deviation of the distribution of the high vapor pressure metal vapor in the longitudinal direction was about L / 4, so the L / 4 interval This is because if the high vapor pressure metal is supplied, the component ratio can be maintained almost constant.
【００２４】そして、中央のレーザ吸光式蒸気密度計で
計測される金属蒸気の密度中で高蒸気圧金属の割合が少
ない場合は中央の合金ワイヤ供給ドラム１２５の回転を
増大し、逆に中央のレーザ吸光式蒸気密度計で計測され
る金属蒸気の密度中で高蒸気圧金属の割合が多い場合は
中央の合金ワイヤ供給ドラム１２５の回転を減少する。When the ratio of the high vapor pressure metal is small in the metal vapor density measured by the laser absorption type vapor density meter at the center, the rotation of the central alloy wire supply drum 125 is increased, and When the ratio of the high vapor pressure metal in the metal vapor density measured by the laser absorption type vapor density meter is large, the rotation of the central alloy wire supply drum 125 is reduced.
【００２５】上記実施形態においては、遮蔽板１２３に
よって遮蔽された金属蒸気は遮蔽板１２３の下面に付着
するが、本発明に係る真空蒸着装置によれば以下の操作
によって遮蔽板１２３下面に付着した金属を再利用する
ことが可能となる。ある程度遮蔽板１２３下面に金属が
付着したと判断されたときには、調整機能１２２によっ
て遮蔽板１２３を電子ビーム１２６で直接照射する。す
ると、遮蔽板１２３下面に付着した金属は再溶融し坩堝
１２１内に滴下するので、金属を再利用することが可能
となり遮蔽板１２３が廃材となることが防止される。In the above embodiment, the metal vapor shielded by the shielding plate 123 adheres to the lower surface of the shielding plate 123. However, according to the vacuum evaporation apparatus of the present invention, the metal vapor adheres to the lower surface of the shielding plate 123 by the following operation. Metal can be reused. When it is determined that the metal has adhered to the lower surface of the shielding plate 123 to some extent, the shielding plate 123 is directly irradiated with the electron beam 126 by the adjusting function 122. Then, the metal adhering to the lower surface of the shield plate 123 is re-melted and dropped into the crucible 121, so that the metal can be reused and the shield plate 123 is prevented from becoming a waste material.
【００２６】[0026]
【発明の効果】第１の発明に係る真空蒸着装置によれ
ば、低蒸気圧金属の溶融部で高蒸気圧金属が蒸発するの
で金属蒸気の成分比をほぼ所定値に維持することができ
るだけでなく、遮蔽板により余分な金属蒸気が薄膜に到
達することを防止することができる。According to the vacuum vapor deposition apparatus of the first invention, the high vapor pressure metal evaporates in the molten portion of the low vapor pressure metal, so that the component ratio of the metal vapor can be maintained almost at a predetermined value. In addition, the shield plate can prevent excess metal vapor from reaching the thin film.
【００２７】第２の発明に係る真空蒸着装置によれば、
低蒸気圧金属および高蒸気圧金属の組成に応じて遮蔽板
の隙間が調整されるので、高蒸気圧金属が低蒸気圧金属
の溶融部で蒸発することを確実にすることが可能とな
る。第３の発明に係る真空蒸着装置によれば、複数の高
蒸気圧金属供給手段を予め定められた所定位置に配置す
ることにより遮蔽板の長手方向の金属蒸気の成分比を略
一定に維持することが可能となる。According to the vacuum evaporation apparatus of the second aspect,
Since the gap between the shielding plates is adjusted according to the compositions of the low vapor pressure metal and the high vapor pressure metal, it is possible to ensure that the high vapor pressure metal evaporates in the molten portion of the low vapor pressure metal. According to the vacuum evaporation apparatus of the third aspect, the component ratio of the metal vapor in the longitudinal direction of the shielding plate is maintained substantially constant by arranging the plurality of high vapor pressure metal supply means at predetermined positions. It becomes possible.
【００２８】第３の発明に係る真空蒸着装置によれば、
金属蒸気の密度計測結果に基づいて金属蒸気の成分比を
一層正確に制御することが可能となる。According to the vacuum evaporation apparatus of the third invention,
The component ratio of the metal vapor can be controlled more accurately based on the result of the density measurement of the metal vapor.
【図１】本発明に係る真空蒸着装置の第１の実施形態の
正面断面図である。FIG. 1 is a front sectional view of a first embodiment of a vacuum evaporation apparatus according to the present invention.
【図２】金属蒸気の発生状況の説明図（その１）であ
る。FIG. 2 is an explanatory diagram (No. 1) of a generation state of metal vapor.
【図３】金属蒸気の発生状況の説明図（その２）であ
る。FIG. 3 is an explanatory diagram (No. 2) of a generation state of metal vapor.
【図４】本発明に係る真空蒸着装置の第２の実施形態の
斜視図である。FIG. 4 is a perspective view of a second embodiment of the vacuum deposition apparatus according to the present invention.
１…真空箱 １０…排気装置 １１…蒸着部 １１１…キャン １１２…第１のフリーローラ １１３…第２のフリーローラ １１４…フィルム送り出しローラ １１５…フィルム巻き取りローラ １１６…フィルム １２…金属蒸気発生部 １２１…坩堝 １２２…調整手段 １２３…遮蔽板 １２４…合金ワイヤ １２５…合金ワイヤ供給ドラム １２６…電子ビーム １２７…電子銃 １２８…モニターカメラ DESCRIPTION OF SYMBOLS 1 ... Vacuum box 10 ... Exhaust device 11 ... Vapor deposition part 111 ... Can 112 ... 1st free roller 113 ... 2nd free roller 114 ... Film sending roller 115 ... Film winding roller 116 ... Film 12 ... Metal vapor generation part 121 ... crucible 122 ... adjusting means 123 ... shielding plate 124 ... alloy wire 125 ... alloy wire supply drum 126 ... electron beam 127 ... electron gun 128 ... monitor camera
Claims (6)
着装置であって、 溶融状態の第１の金属材を貯蔵する坩堝の直上方に相互
に隙間を介して略水平に設置される一対の遮蔽板と、 前記遮蔽板の上方から前記遮蔽板の隙間を介して、前記
第１の金属材より高い蒸気圧を有する第２の金属材を前
記第１の金属材の溶融部に供給する少なくとも１つの高
蒸気圧金属供給手段と、を具備する真空蒸着装置。1. A vacuum deposition apparatus for depositing a metal on a strip-shaped thin film, comprising: a pair of substantially vertically disposed crucibles, each having a gap therebetween, directly above a crucible storing a first metal material in a molten state. And a second metal material having a higher vapor pressure than the first metal material is supplied to a molten portion of the first metal material from above the shielding plate via a gap between the shielding plates. A vacuum vapor deposition apparatus comprising at least one high vapor pressure metal supply means.
点の材料で製造されたものである請求項１に記載の真空
蒸着装置。2. The vacuum evaporation apparatus according to claim 1, wherein the pair of shielding plates are made of a material having a low vapor pressure and a high melting point.
ステンもしくは炭素である請求項２に記載の真空蒸着装
置。3. The vacuum deposition apparatus according to claim 2, wherein the material having a low vapor pressure and a high melting point is tungsten or carbon.
調整手段をさらに具備する請求項１から３のいずれか１
項に記載の真空蒸着装置。4. The apparatus according to claim 1, further comprising a gap adjusting means for adjusting a gap between said pair of shielding plates.
Item 6. The vacuum evaporation apparatus according to Item 1.
記一対の遮蔽板の隙間に沿って、隙間の一端から１／
４、１／２、および３／４の位置に配置される請求項１
から４のいずれか１項に記載の真空蒸着装置。5. The three high-vapor-pressure metal supply means extends from one end of the gap along one gap of the pair of shielding plates.
2. The arrangement of claim 1, wherein said arrangement is at 4, 1/2 and 3/4 positions.
The vacuum evaporation apparatus according to any one of items 1 to 4, wherein
介して上昇する金属蒸気の密度を計測する蒸気密度計測
手段と、 前記蒸気密度計測手段で計測された金属蒸気の密度に基
づいて前記高蒸気圧金属供給手段による第２の金属材の
供給量を制御する高蒸気圧金属供給量制御手段と、をさ
らに具備する請求項１から５のいずれか１項に記載の真
空蒸着装置。6. A vapor density measuring means for measuring a density of metal vapor rising from the crucible through a gap between the pair of shielding plates, and a density of the metal vapor measured by the vapor density measuring means. The vacuum evaporation apparatus according to any one of claims 1 to 5, further comprising a high vapor pressure metal supply amount control unit that controls a supply amount of the second metal material by the high vapor pressure metal supply unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11232730A JP2001059158A (en) | 1999-08-19 | 1999-08-19 | Vacuum evaporation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11232730A JP2001059158A (en) | 1999-08-19 | 1999-08-19 | Vacuum evaporation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001059158A true JP2001059158A (en) | 2001-03-06 |
Family
ID=16943894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11232730A Withdrawn JP2001059158A (en) | 1999-08-19 | 1999-08-19 | Vacuum evaporation equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001059158A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012077375A (en) * | 2010-09-09 | 2012-04-19 | Panasonic Corp | Vacuum deposition apparatus |
| CN113930719A (en) * | 2021-09-18 | 2022-01-14 | 铜陵市超越电子有限公司 | Vacuum coating machine for processing metallized film of capacitor |
| JP7477725B2 (en) | 2021-03-01 | 2024-05-01 | カール ツァイス ヴィジョン インターナショナル ゲーエムベーハー | Vapor deposition method for coating spectacle lenses, physical vapor deposition system and crucible for physical vapor deposition - Patents.com |
-
1999
- 1999-08-19 JP JP11232730A patent/JP2001059158A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012077375A (en) * | 2010-09-09 | 2012-04-19 | Panasonic Corp | Vacuum deposition apparatus |
| JP7477725B2 (en) | 2021-03-01 | 2024-05-01 | カール ツァイス ヴィジョン インターナショナル ゲーエムベーハー | Vapor deposition method for coating spectacle lenses, physical vapor deposition system and crucible for physical vapor deposition - Patents.com |
| CN113930719A (en) * | 2021-09-18 | 2022-01-14 | 铜陵市超越电子有限公司 | Vacuum coating machine for processing metallized film of capacitor |
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