IT1275668B1 - Circuito di ridondanza di riga e procedimento per un dispositivo di memoria a semiconduttore con un decodificatore doppio di riga - Google Patents
Circuito di ridondanza di riga e procedimento per un dispositivo di memoria a semiconduttore con un decodificatore doppio di rigaInfo
- Publication number
- IT1275668B1 IT1275668B1 IT94MI002333A ITMI942333A IT1275668B1 IT 1275668 B1 IT1275668 B1 IT 1275668B1 IT 94MI002333 A IT94MI002333 A IT 94MI002333A IT MI942333 A ITMI942333 A IT MI942333A IT 1275668 B1 IT1275668 B1 IT 1275668B1
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- memory device
- semiconductor memory
- redundancy circuit
- line
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/702—Masking faults in memories by using spares or by reconfiguring by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93024667A KR960008825B1 (en) | 1993-11-18 | 1993-11-18 | Row redundancy circuit and method of semiconductor memory device with double row decoder |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI942333A0 ITMI942333A0 (it) | 1994-11-17 |
ITMI942333A1 ITMI942333A1 (it) | 1996-05-17 |
IT1275668B1 true IT1275668B1 (it) | 1997-10-17 |
Family
ID=19368451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT94MI002333A IT1275668B1 (it) | 1993-11-18 | 1994-11-17 | Circuito di ridondanza di riga e procedimento per un dispositivo di memoria a semiconduttore con un decodificatore doppio di riga |
Country Status (7)
Country | Link |
---|---|
US (1) | US5461587A (it) |
JP (1) | JPH07192491A (it) |
KR (1) | KR960008825B1 (it) |
CN (1) | CN1045345C (it) |
DE (1) | DE4441183C2 (it) |
FR (1) | FR2712721B1 (it) |
IT (1) | IT1275668B1 (it) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0877776A (ja) * | 1994-09-06 | 1996-03-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
DE19507312C1 (de) * | 1995-03-02 | 1996-07-25 | Siemens Ag | Halbleiterspeicher, dessen Speicherzellen zu einzeln adressierbaren Einheiten zusammengefaßt sind und Verfahren zum Betrieb solcher Speicher |
JPH09180495A (ja) * | 1995-12-27 | 1997-07-11 | Nec Corp | 半導体記憶装置 |
KR0179550B1 (ko) * | 1995-12-29 | 1999-04-15 | 김주용 | 반도체 메모리 장치의 리던던시 회로 |
US5781483A (en) * | 1996-12-31 | 1998-07-14 | Micron Technology, Inc. | Device and method for repairing a memory array by storing each bit in multiple memory cells in the array |
US5831914A (en) * | 1997-03-31 | 1998-11-03 | International Business Machines Corporation | Variable size redundancy replacement architecture to make a memory fault-tolerant |
US5978931A (en) * | 1997-07-16 | 1999-11-02 | International Business Machines Corporation | Variable domain redundancy replacement configuration for a memory device |
US5881003A (en) * | 1997-07-16 | 1999-03-09 | International Business Machines Corporation | Method of making a memory device fault tolerant using a variable domain redundancy replacement configuration |
US5970000A (en) * | 1998-02-02 | 1999-10-19 | International Business Machines Corporation | Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains |
US6072735A (en) * | 1998-06-22 | 2000-06-06 | Lucent Technologies, Inc. | Built-in redundancy architecture for computer memories |
US6407944B1 (en) | 1998-12-29 | 2002-06-18 | Samsung Electronics Co., Ltd. | Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices |
KR100375599B1 (ko) * | 1999-06-30 | 2003-03-15 | 주식회사 하이닉스반도체 | 로오 리던던시 회로 |
JP2001101892A (ja) | 1999-09-30 | 2001-04-13 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100586068B1 (ko) * | 1999-12-20 | 2006-06-07 | 매그나칩 반도체 유한회사 | 메모리장치의 리페어 회로 |
KR100498610B1 (ko) * | 1999-12-22 | 2005-07-01 | 주식회사 하이닉스반도체 | 뱅크 구분없이 휴즈 박스를 사용하는 로우 리던던시 회로 |
KR20030028827A (ko) * | 2000-08-31 | 2003-04-10 | 닛뽄덴끼 가부시끼가이샤 | 반도체 기억장치 및 그 리프레싱 방법 |
US6549476B2 (en) | 2001-04-09 | 2003-04-15 | Micron Technology, Inc. | Device and method for using complementary bits in a memory array |
US6442099B1 (en) * | 2001-04-18 | 2002-08-27 | Sun Microsystems, Inc. | Low power read scheme for memory array structures |
KR100481857B1 (ko) | 2002-08-14 | 2005-04-11 | 삼성전자주식회사 | 레이아웃 면적을 줄이고 뱅크 마다 독립적인 동작을수행할 수 있는 디코더를 갖는 플레쉬 메모리 장치 |
JP3884374B2 (ja) * | 2002-12-06 | 2007-02-21 | 株式会社東芝 | 半導体装置 |
US7509543B2 (en) * | 2003-06-17 | 2009-03-24 | Micron Technology, Inc. | Circuit and method for error test, recordation, and repair |
KR101165027B1 (ko) * | 2004-06-30 | 2012-07-13 | 삼성전자주식회사 | 반도체 메모리 장치에서의 리던던시 프로그램 회로 |
US7110319B2 (en) * | 2004-08-27 | 2006-09-19 | Micron Technology, Inc. | Memory devices having reduced coupling noise between wordlines |
KR20170055222A (ko) | 2015-11-11 | 2017-05-19 | 삼성전자주식회사 | 리페어 단위 변경 기능을 가지는 메모리 장치 및 메모리 시스템 |
US11557369B2 (en) * | 2021-04-02 | 2023-01-17 | Micron Technology, Inc. | Systems and methods to reduce the impact of short bits in phase change memory arrays |
CN113178216B (zh) * | 2021-05-28 | 2022-05-20 | 长鑫存储技术有限公司 | 半导体存储装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4837747A (en) * | 1986-11-29 | 1989-06-06 | Mitsubishi Denki Kabushiki Kaisha | Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block |
JPH01184796A (ja) * | 1988-01-19 | 1989-07-24 | Nec Corp | 半導体メモリ装置 |
EP0333207B1 (en) * | 1988-03-18 | 1997-06-11 | Kabushiki Kaisha Toshiba | Mask rom with spare memory cells |
JP2547615B2 (ja) * | 1988-06-16 | 1996-10-23 | 三菱電機株式会社 | 読出専用半導体記憶装置および半導体記憶装置 |
JP2632089B2 (ja) * | 1990-06-07 | 1997-07-16 | 三菱電機株式会社 | 半導体回路装置 |
JPH04255998A (ja) * | 1991-02-08 | 1992-09-10 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JP2501993B2 (ja) * | 1992-02-24 | 1996-05-29 | 株式会社東芝 | 半導体記憶装置 |
KR950004623B1 (ko) * | 1992-12-07 | 1995-05-03 | 삼성전자주식회사 | 리던던시 효율이 향상되는 반도체 메모리 장치 |
US5377146A (en) * | 1993-07-23 | 1994-12-27 | Alliance Semiconductor Corporation | Hierarchical redundancy scheme for high density monolithic memories |
-
1993
- 1993-11-18 KR KR93024667A patent/KR960008825B1/ko not_active IP Right Cessation
-
1994
- 1994-11-17 US US08/343,950 patent/US5461587A/en not_active Expired - Lifetime
- 1994-11-17 IT IT94MI002333A patent/IT1275668B1/it active IP Right Grant
- 1994-11-18 FR FR9413853A patent/FR2712721B1/fr not_active Expired - Fee Related
- 1994-11-18 DE DE4441183A patent/DE4441183C2/de not_active Expired - Fee Related
- 1994-11-18 CN CN94116042A patent/CN1045345C/zh not_active Expired - Fee Related
- 1994-11-18 JP JP6284712A patent/JPH07192491A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ITMI942333A1 (it) | 1996-05-17 |
ITMI942333A0 (it) | 1994-11-17 |
DE4441183A1 (de) | 1995-05-24 |
DE4441183C2 (de) | 2000-01-05 |
FR2712721B1 (fr) | 1997-06-20 |
CN1045345C (zh) | 1999-09-29 |
FR2712721A1 (fr) | 1995-05-24 |
US5461587A (en) | 1995-10-24 |
KR950015398A (ko) | 1995-06-16 |
JPH07192491A (ja) | 1995-07-28 |
KR960008825B1 (en) | 1996-07-05 |
CN1115104A (zh) | 1996-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971126 |