IT1256497B - Memoria di sola lettura programmabile e cancellabile elettricamente con un circuito di verifica e correzzione dell'errore - Google Patents
Memoria di sola lettura programmabile e cancellabile elettricamente con un circuito di verifica e correzzione dell'erroreInfo
- Publication number
- IT1256497B IT1256497B ITMI922999A ITMI922999A IT1256497B IT 1256497 B IT1256497 B IT 1256497B IT MI922999 A ITMI922999 A IT MI922999A IT MI922999 A ITMI922999 A IT MI922999A IT 1256497 B IT1256497 B IT 1256497B
- Authority
- IT
- Italy
- Prior art keywords
- bit lines
- page memories
- correction
- circuit
- readable memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Detection And Correction Of Errors (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Ciò che viene divulgato è una EEPROM che comprende una matrice di memoria includente una pluralità di linee di bit, una pluralità di celle di memoria collegate rispettivamente alle linee di bit e alle celle di parità e un circuito di verifica e di correzione dell'errore con una porta di colonna collegata alla pluralità di linee di bit per caricare i dati di ingresso nelle rispettive memorie temporanee o intermedie di pagina e per elaborare i dati della memoria in unità a byte multipli dei dati di ingresso in modo da generare i dati di parità che consistono in una pluralità di bit scritti in modo casuale nelle memorie temporanee di pagina, in cui le memorie temporanee di pagina sono collegate tra la pluralità di linee di bit e la porta di colonna. Vengono forniti preferibilmente mezzi di separazione per controllare il collegamento tra le memorie temporanee di pagina e la pluralità di linee di bit.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920005284A KR950003013B1 (ko) | 1992-03-30 | 1992-03-30 | 틀림정정회로를 가지는 이이피롬 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI922999A0 ITMI922999A0 (it) | 1992-12-31 |
ITMI922999A1 ITMI922999A1 (it) | 1994-07-01 |
IT1256497B true IT1256497B (it) | 1995-12-07 |
Family
ID=19331104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI922999A IT1256497B (it) | 1992-03-30 | 1992-12-31 | Memoria di sola lettura programmabile e cancellabile elettricamente con un circuito di verifica e correzzione dell'errore |
Country Status (9)
Country | Link |
---|---|
US (1) | US5448578A (it) |
JP (1) | JP2525112B2 (it) |
KR (1) | KR950003013B1 (it) |
CN (1) | CN1035698C (it) |
DE (1) | DE4242810C2 (it) |
FR (1) | FR2689295B1 (it) |
GB (1) | GB2265738B (it) |
IT (1) | IT1256497B (it) |
TW (1) | TW272286B (it) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH08203278A (ja) * | 1995-01-25 | 1996-08-09 | Sony Corp | 半導体メモリ |
EP0766174B1 (en) * | 1995-09-29 | 2002-05-22 | STMicroelectronics S.r.l. | Memory device having improved yield and reliability |
EP0797147B1 (en) * | 1996-03-21 | 2002-07-03 | STMicroelectronics S.r.l. | Method for recovering failed memory devices |
FR2748134B1 (fr) * | 1996-04-30 | 1998-06-26 | Bull Cp8 | Procede et dispositif permettant a un programme fige de pouvoir evoluer |
US6041423A (en) * | 1996-11-08 | 2000-03-21 | Oracle Corporation | Method and apparatus for using undo/redo logging to perform asynchronous updates of parity and data pages in a redundant array data storage environment |
KR100247064B1 (ko) * | 1997-04-10 | 2000-03-15 | 윤종용 | 콤팩트디스크-롬 드라이브의 디코딩장치에서 에러정정을 위한 메모리 리드회로 |
US5956743A (en) * | 1997-08-25 | 1999-09-21 | Bit Microsystems, Inc. | Transparent management at host interface of flash-memory overhead-bytes using flash-specific DMA having programmable processor-interrupt of high-level operations |
KR100266748B1 (ko) | 1997-12-31 | 2000-10-02 | 윤종용 | 반도체 메모리 장치 및 그 장치의 에러 정정 방법 |
JP4074029B2 (ja) | 1999-06-28 | 2008-04-09 | 株式会社東芝 | フラッシュメモリ |
FR2809222A1 (fr) * | 2000-05-17 | 2001-11-23 | St Microelectronics Sa | Memoire eeprom comprenant un systeme de correction d'erreur |
JP3595495B2 (ja) | 2000-07-27 | 2004-12-02 | Necマイクロシステム株式会社 | 半導体記憶装置 |
US7042770B2 (en) * | 2001-07-23 | 2006-05-09 | Samsung Electronics Co., Ltd. | Memory devices with page buffer having dual registers and method of using the same |
KR100543447B1 (ko) * | 2003-04-03 | 2006-01-23 | 삼성전자주식회사 | 에러정정기능을 가진 플래쉬메모리장치 |
US7099221B2 (en) | 2004-05-06 | 2006-08-29 | Micron Technology, Inc. | Memory controller method and system compensating for memory cell data losses |
US20060010339A1 (en) | 2004-06-24 | 2006-01-12 | Klein Dean A | Memory system and method having selective ECC during low power refresh |
US7340668B2 (en) | 2004-06-25 | 2008-03-04 | Micron Technology, Inc. | Low power cost-effective ECC memory system and method |
US7116602B2 (en) | 2004-07-15 | 2006-10-03 | Micron Technology, Inc. | Method and system for controlling refresh to avoid memory cell data losses |
US6965537B1 (en) | 2004-08-31 | 2005-11-15 | Micron Technology, Inc. | Memory system and method using ECC to achieve low power refresh |
KR100680486B1 (ko) * | 2005-03-30 | 2007-02-08 | 주식회사 하이닉스반도체 | 향상된 동작 성능을 가지는 플래시 메모리 장치의 페이지버퍼 회로 및 그 독출 및 프로그램 동작 제어 방법 |
JP2008059711A (ja) * | 2006-09-01 | 2008-03-13 | Toshiba Corp | 半導体記憶装置 |
US7836386B2 (en) * | 2006-09-27 | 2010-11-16 | Qimonda Ag | Phase shift adjusting method and circuit |
JP5016888B2 (ja) * | 2006-10-04 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7894289B2 (en) | 2006-10-11 | 2011-02-22 | Micron Technology, Inc. | Memory system and method using partial ECC to achieve low power refresh and fast access to data |
US7900120B2 (en) | 2006-10-18 | 2011-03-01 | Micron Technology, Inc. | Memory system and method using ECC with flag bit to identify modified data |
KR100799018B1 (ko) * | 2006-12-27 | 2008-01-28 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자 및 자기 보상 방법 |
KR100888482B1 (ko) | 2007-05-11 | 2009-03-12 | 삼성전자주식회사 | 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 쓰기 방법 |
KR101678404B1 (ko) * | 2010-02-25 | 2016-11-23 | 삼성전자주식회사 | 사전 확률 정보를 사용하는 메모리 시스템 및 그것의 데이터 처리 방법 |
JP2010231887A (ja) * | 2010-07-20 | 2010-10-14 | Toshiba Corp | 不揮発性半導体メモリ |
US9047953B2 (en) * | 2013-08-22 | 2015-06-02 | Macronix International Co., Ltd. | Memory device structure with page buffers in a page-buffer level separate from the array level |
US9484113B2 (en) * | 2014-04-15 | 2016-11-01 | Advanced Micro Devices, Inc. | Error-correction coding for hot-swapping semiconductor devices |
KR20160125745A (ko) * | 2015-04-22 | 2016-11-01 | 에스케이하이닉스 주식회사 | 반도체 장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US3668632A (en) * | 1969-02-13 | 1972-06-06 | Ibm | Fast decode character error detection and correction system |
US4410988A (en) * | 1978-08-04 | 1983-10-18 | Honeywell Information Systems Inc. | Out of cycle error correction apparatus |
US4692923A (en) * | 1984-09-28 | 1987-09-08 | Ncr Corporation | Fault tolerant memory |
JPS6221357A (ja) * | 1985-07-22 | 1987-01-29 | Toshiba Corp | メモリシステム |
US4672613A (en) * | 1985-11-01 | 1987-06-09 | Cipher Data Products, Inc. | System for transferring digital data between a host device and a recording medium |
JPH01171199A (ja) * | 1987-12-25 | 1989-07-06 | Mitsubishi Electric Corp | 半導体メモリ |
JPH024813A (ja) * | 1988-06-24 | 1990-01-09 | Hitachi Ltd | 重合性組成物 |
US4996690A (en) * | 1988-08-26 | 1991-02-26 | Stac Electronics | Write operation with gating capability |
JPH02166700A (ja) * | 1988-12-15 | 1990-06-27 | Samsung Electron Co Ltd | エラー検査及び訂正装置を内蔵した不揮発性半導体メモリ装置 |
US5274647A (en) * | 1989-02-13 | 1993-12-28 | Kabushiki Kaisha Toshiba | Elastic buffer with error detection using a hamming distance circuit |
JPH07114077B2 (ja) * | 1989-06-01 | 1995-12-06 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
JPH0318832A (ja) * | 1989-06-15 | 1991-01-28 | Ricoh Co Ltd | 有機膜形成方法 |
-
1992
- 1992-03-30 KR KR1019920005284A patent/KR950003013B1/ko not_active IP Right Cessation
- 1992-11-09 TW TW081108961A patent/TW272286B/zh active
- 1992-11-27 FR FR9214328A patent/FR2689295B1/fr not_active Expired - Fee Related
- 1992-12-17 DE DE4242810A patent/DE4242810C2/de not_active Expired - Fee Related
- 1992-12-31 GB GB9227139A patent/GB2265738B/en not_active Expired - Fee Related
- 1992-12-31 IT ITMI922999A patent/IT1256497B/it active IP Right Grant
- 1992-12-31 CN CN92115052A patent/CN1035698C/zh not_active Expired - Fee Related
-
1993
- 1993-01-29 JP JP5013896A patent/JP2525112B2/ja not_active Expired - Fee Related
- 1993-03-30 US US08/038,095 patent/US5448578A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5448578A (en) | 1995-09-05 |
CN1077049A (zh) | 1993-10-06 |
TW272286B (it) | 1996-03-11 |
JPH05298895A (ja) | 1993-11-12 |
GB9227139D0 (en) | 1993-02-24 |
JP2525112B2 (ja) | 1996-08-14 |
KR930020472A (ko) | 1993-10-19 |
ITMI922999A1 (it) | 1994-07-01 |
GB2265738A (en) | 1993-10-06 |
CN1035698C (zh) | 1997-08-20 |
GB2265738B (en) | 1996-01-17 |
FR2689295A1 (fr) | 1993-10-01 |
KR950003013B1 (ko) | 1995-03-29 |
DE4242810C2 (de) | 2000-06-08 |
FR2689295B1 (fr) | 1996-12-27 |
DE4242810A1 (de) | 1993-10-07 |
ITMI922999A0 (it) | 1992-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961223 |