DE3586385D1 - Integrierte gate-matrixstruktur. - Google Patents
Integrierte gate-matrixstruktur.Info
- Publication number
- DE3586385D1 DE3586385D1 DE8585307023T DE3586385T DE3586385D1 DE 3586385 D1 DE3586385 D1 DE 3586385D1 DE 8585307023 T DE8585307023 T DE 8585307023T DE 3586385 T DE3586385 T DE 3586385T DE 3586385 D1 DE3586385 D1 DE 3586385D1
- Authority
- DE
- Germany
- Prior art keywords
- matrix structure
- integrated gate
- gate matrix
- integrated
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59206144A JPH0828481B2 (ja) | 1984-10-03 | 1984-10-03 | ゲ−トアレイマスタスライス集積回路装置 |
JP59220447A JPH0828482B2 (ja) | 1984-10-22 | 1984-10-22 | ゲ−トアレイマスタスライス集積回路装置におけるクリツプ方法 |
JP59220450A JPH07105479B2 (ja) | 1984-10-22 | 1984-10-22 | ゲ−トアレイマスタスライス集積回路装置におけるクリツプ方法 |
JP59274504A JPS61156751A (ja) | 1984-12-28 | 1984-12-28 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3586385D1 true DE3586385D1 (de) | 1992-08-27 |
DE3586385T2 DE3586385T2 (de) | 1993-01-07 |
Family
ID=27476294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585307023T Expired - Fee Related DE3586385T2 (de) | 1984-10-03 | 1985-10-01 | Integrierte gate-matrixstruktur. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4661815A (de) |
EP (1) | EP0177336B1 (de) |
KR (1) | KR900005150B1 (de) |
DE (1) | DE3586385T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62119936A (ja) * | 1985-11-19 | 1987-06-01 | Fujitsu Ltd | コンプリメンタリ−lsiチツプ |
US4884118A (en) * | 1986-05-19 | 1989-11-28 | Lsi Logic Corporation | Double metal HCMOS compacted array |
JPS62276852A (ja) * | 1986-05-23 | 1987-12-01 | Mitsubishi Electric Corp | 半導体集積回路装置 |
EP0248266A3 (de) * | 1986-06-06 | 1990-04-25 | Siemens Aktiengesellschaft | Logikschaltung mit einer Mehrzahl von zueinander komplementären Feldeffekttransistoren |
JPH0789568B2 (ja) * | 1986-06-19 | 1995-09-27 | 日本電気株式会社 | 集積回路装置 |
JPH0738414B2 (ja) * | 1987-01-09 | 1995-04-26 | 株式会社東芝 | 半導体集積回路 |
US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
JP2606845B2 (ja) * | 1987-06-19 | 1997-05-07 | 富士通株式会社 | 半導体集積回路 |
JPH0254576A (ja) * | 1988-08-18 | 1990-02-23 | Mitsubishi Electric Corp | ゲートアレイ |
JPH0727968B2 (ja) * | 1988-12-20 | 1995-03-29 | 株式会社東芝 | 半導体集積回路装置 |
US4928160A (en) * | 1989-01-17 | 1990-05-22 | Ncr Corporation | Gate isolated base cell structure with off-grid gate polysilicon pattern |
US5298774A (en) * | 1990-01-11 | 1994-03-29 | Mitsubishi Denki Kabushiki Kaisha | Gate array system semiconductor integrated circuit device |
JPH04103161A (ja) * | 1990-08-22 | 1992-04-06 | Toshiba Corp | バイポーラトランジスタ・絶縁ゲート型トランジスタ混載半導体装置 |
US5063429A (en) * | 1990-09-17 | 1991-11-05 | Ncr Corporation | High density input/output cell arrangement for integrated circuits |
JP3084740B2 (ja) * | 1990-10-30 | 2000-09-04 | 日本電気株式会社 | 半導体集積回路 |
US5155390A (en) * | 1991-07-25 | 1992-10-13 | Motorola, Inc. | Programmable block architected heterogeneous integrated circuit |
US5343058A (en) * | 1991-11-18 | 1994-08-30 | Vlsi Technology, Inc. | Gate array bases with flexible routing |
US5308798A (en) * | 1992-11-12 | 1994-05-03 | Vlsi Technology, Inc. | Preplacement method for weighted net placement integrated circuit design layout tools |
US5757208A (en) * | 1996-05-01 | 1998-05-26 | Motorola, Inc. | Programmable array and method for routing power busses therein |
JP3553334B2 (ja) * | 1997-10-06 | 2004-08-11 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3526450B2 (ja) * | 2001-10-29 | 2004-05-17 | 株式会社東芝 | 半導体集積回路およびスタンダードセル配置設計方法 |
WO2011077664A1 (ja) | 2009-12-25 | 2011-06-30 | パナソニック株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161662A (en) * | 1976-01-22 | 1979-07-17 | Motorola, Inc. | Standardized digital logic chip |
JPH077825B2 (ja) * | 1981-08-13 | 1995-01-30 | 富士通株式会社 | ゲートアレイの製造方法 |
DE3474485D1 (en) * | 1983-03-09 | 1988-11-10 | Toshiba Kk | Semiconductor integrated circuit with gate-array arrangement |
JPS59163837A (ja) * | 1983-03-09 | 1984-09-14 | Toshiba Corp | 半導体集積回路 |
JPS6017932A (ja) * | 1983-07-09 | 1985-01-29 | Fujitsu Ltd | ゲ−ト・アレイ |
US4602270A (en) * | 1985-05-17 | 1986-07-22 | United Technologies Corporation | Gate array with reduced isolation |
-
1985
- 1985-10-01 DE DE8585307023T patent/DE3586385T2/de not_active Expired - Fee Related
- 1985-10-01 EP EP85307023A patent/EP0177336B1/de not_active Expired - Lifetime
- 1985-10-02 KR KR858507267A patent/KR900005150B1/ko not_active IP Right Cessation
- 1985-10-02 US US06/782,923 patent/US4661815A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0177336B1 (de) | 1992-07-22 |
US4661815A (en) | 1987-04-28 |
KR900005150B1 (en) | 1990-07-20 |
EP0177336A2 (de) | 1986-04-09 |
KR860003662A (ko) | 1986-05-28 |
EP0177336A3 (en) | 1987-04-15 |
DE3586385T2 (de) | 1993-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3586385D1 (de) | Integrierte gate-matrixstruktur. | |
NO852404L (no) | Doerkonstruksjon. | |
NO854540L (no) | Tynnplatekonstruksjon. | |
NO904711L (no) | Mellomprodukt. | |
DE3587223D1 (de) | Unabhaengige matrixtaktierung. | |
FI850465L (fi) | Tak- och vaeggkonstruktion. | |
FI851514L (fi) | Organiska foereningar. | |
IT8419752A0 (it) | Rifugio antiatomico. | |
FI843385A0 (fi) | Anordning i virvelbaeddsreaktor. | |
DE3578058D1 (de) | Schiffsbodenstruktur. | |
DE3686709D1 (de) | Gattermatrix. | |
DE3581910D1 (de) | Speichermatrix. | |
DE3583064D1 (de) | Supraleitender transistor. | |
DE3582004D1 (de) | Basisgekoppelte transistorlogik. | |
IT1183352B (it) | Saracinesca | |
FI861502A (fi) | Doerrkarm beroerande konstruktion. | |
FI842051A (fi) | Daempningsventil foer kopplingen i en traktors kraftoeverfoeringsaxel. | |
FI842050A (fi) | Banformningsparti i pappersmaskin. | |
FI843081A0 (fi) | Dubbelviraformare i pappersmaskin. | |
ATE43890T1 (de) | Absperrschieber. | |
FI842772A0 (fi) | Torkningsfoerfarande foer slam. | |
NO864001D0 (no) | Sluse. | |
ES278229Y (es) | Valvula de compuerta. | |
ATE43706T1 (de) | Reinraum. | |
FI842598A0 (fi) | Luftningssystem i ekonomibyggnader. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |