IT1047165B - Dispositivo ottico a doppio etero struttura particolarmente per laser a giunzione - Google Patents
Dispositivo ottico a doppio etero struttura particolarmente per laser a giunzioneInfo
- Publication number
- IT1047165B IT1047165B IT69232/75A IT6923275A IT1047165B IT 1047165 B IT1047165 B IT 1047165B IT 69232/75 A IT69232/75 A IT 69232/75A IT 6923275 A IT6923275 A IT 6923275A IT 1047165 B IT1047165 B IT 1047165B
- Authority
- IT
- Italy
- Prior art keywords
- optical device
- straight optical
- double straight
- junction lasers
- lasers
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/557,250 US3978426A (en) | 1975-03-11 | 1975-03-11 | Heterostructure devices including tapered optical couplers |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1047165B true IT1047165B (it) | 1980-09-10 |
Family
ID=24224637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT69232/75A IT1047165B (it) | 1975-03-11 | 1975-09-05 | Dispositivo ottico a doppio etero struttura particolarmente per laser a giunzione |
Country Status (11)
Country | Link |
---|---|
US (1) | US3978426A (it) |
JP (1) | JPS5856990B2 (it) |
BE (1) | BE832985A (it) |
CA (1) | CA1044356A (it) |
DE (1) | DE2538471A1 (it) |
ES (2) | ES440764A1 (it) |
FR (1) | FR2313779A1 (it) |
GB (2) | GB1530801A (it) |
IT (1) | IT1047165B (it) |
NL (1) | NL183746C (it) |
SE (1) | SE403011B (it) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4028146A (en) * | 1975-03-11 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | LPE Technique for fabricating tapered optical couplers |
US4093345A (en) * | 1976-05-27 | 1978-06-06 | Bell Telephone Laboratories, Incorporated | Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding |
GB1572874A (en) * | 1977-02-22 | 1980-08-06 | Standard Telephones Cables Ltd | Optical waveguides |
US4124270A (en) * | 1977-03-30 | 1978-11-07 | United Technologies Corporation | Monolithic, three-dimensional infrared waveguide for high power lasers |
US4136928A (en) * | 1977-05-06 | 1979-01-30 | Bell Telephone Laboratories, Incorporated | Optical integrated circuit including junction laser with oblique mirror |
US4190813A (en) * | 1977-12-28 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
US4185256A (en) * | 1978-01-13 | 1980-01-22 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
US4159452A (en) * | 1978-01-13 | 1979-06-26 | Bell Telephone Laboratories, Incorporated | Dual beam double cavity heterostructure laser with branching output waveguides |
JPS5562792A (en) * | 1978-10-11 | 1980-05-12 | Nec Corp | Injection type semiconductor laser element |
JPS56112786A (en) * | 1980-02-08 | 1981-09-05 | Nec Corp | Manufacture of semiconductor laser |
JPS56112785A (en) * | 1980-02-08 | 1981-09-05 | Nec Corp | Semiconductor laser |
JPS56112782A (en) * | 1980-02-08 | 1981-09-05 | Nec Corp | Semiconductor laser |
JPS56112784A (en) * | 1980-02-08 | 1981-09-05 | Nec Corp | Semiconductor laser |
JPS5898996A (ja) * | 1981-12-03 | 1983-06-13 | ゼロツクス・コ−ポレ−シヨン | 注入形レ−ザ |
US4464211A (en) * | 1982-05-26 | 1984-08-07 | At&T Bell Laboratories | Method for selective area growth by liquid phase epitaxy |
US4488307A (en) * | 1982-06-07 | 1984-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Three-mirror active-passive semiconductor laser |
JPS5940592A (ja) * | 1982-08-30 | 1984-03-06 | Sharp Corp | 半導体レ−ザ素子 |
US4523316A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser with non-absorbing mirror facet |
US4523317A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser with reduced absorption at a mirror facet |
JPS59188988A (ja) * | 1983-04-11 | 1984-10-26 | Nec Corp | 半導体レ−ザおよびその駆動方法 |
US4577933A (en) * | 1983-12-15 | 1986-03-25 | Xerox Corporation | Gap modulator for high speed scanners |
US4581742A (en) * | 1984-04-10 | 1986-04-08 | Rca Corporation | Semiconductor laser having a non-absorbing passive region with beam guiding |
US4631730A (en) * | 1984-09-28 | 1986-12-23 | Bell Communications Research, Inc. | Low noise injection laser structure |
JPH0632339B2 (ja) * | 1984-12-18 | 1994-04-27 | キヤノン株式会社 | 半導体レ−ザ |
DE3587249D1 (de) * | 1985-01-07 | 1993-05-13 | Siemens Ag | Monolithisch integrierter wdm-demultiplexmodul und ein verfahren zur herstellung eines solchen moduls. |
JPH0626276B2 (ja) * | 1985-01-14 | 1994-04-06 | 日本電気株式会社 | レ−ザ光直接周波数変調方法 |
US4709371A (en) * | 1985-10-18 | 1987-11-24 | West Fred D | Variable wavelength laser diode |
US4745607A (en) * | 1986-10-08 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Interlayer directional coupling in antiresonant reflecting optical waveguides |
DE3738053A1 (de) * | 1987-11-09 | 1989-05-18 | Siemens Ag | Laseranordnung mit mindestens einem laserresonator und einem damit verkoppelten passiven resonator |
DE3836802A1 (de) * | 1988-10-28 | 1990-05-03 | Siemens Ag | Halbleiterlaseranordnung fuer hohe ausgangsleistungen im lateralen grundmodus |
CA2020246C (en) * | 1989-08-03 | 1994-02-01 | Thomas L. Koch | Tapered semiconductor waveguides and method of making same |
US4944838A (en) * | 1989-08-03 | 1990-07-31 | At&T Bell Laboratories | Method of making tapered semiconductor waveguides |
US4932032A (en) * | 1989-08-03 | 1990-06-05 | At&T Bell Laboratories | Tapered semiconductor waveguides |
EP0498170B1 (de) * | 1991-02-08 | 1997-08-27 | Siemens Aktiengesellschaft | Integriert optisches Bauelement für die Kopplung zwischen unterschiedlich dimensionierten Wellenleitern |
US5109464A (en) * | 1991-05-24 | 1992-04-28 | Amoco Corporation | Rib waveguide optimized for low loss coupling to optical fibers and method of determining same |
FR2684823B1 (fr) * | 1991-12-04 | 1994-01-21 | Alcatel Alsthom Cie Gle Electric | Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication. |
US5216727A (en) * | 1992-05-08 | 1993-06-01 | At&T Bell Laboratories | Integrated nonlinear waveguide spectrometer |
US5577141A (en) * | 1995-03-10 | 1996-11-19 | Lucent Technologies Inc. | Two-dimensional segmentation mode tapering for integrated optic waveguides |
US6052397A (en) | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
JP2003519438A (ja) | 1999-04-27 | 2003-06-17 | シュラムバーガー ホールディングス リミテッド | 放射源 |
US6341189B1 (en) | 1999-11-12 | 2002-01-22 | Sparkolor Corporation | Lenticular structure for integrated waveguides |
US6293688B1 (en) | 1999-11-12 | 2001-09-25 | Sparkolor Corporation | Tapered optical waveguide coupler |
US7088756B2 (en) * | 2003-07-25 | 2006-08-08 | Imra America, Inc. | Polarization maintaining dispersion controlled fiber laser source of ultrashort pulses |
KR100431084B1 (ko) * | 2002-08-21 | 2004-05-12 | 한국전자통신연구원 | 광도파로 및 그의 제조 방법 |
US20040211972A1 (en) * | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
EP3821505A4 (en) * | 2018-07-13 | 2022-07-06 | The Government of the United States of America as represented by the Secretary of the Navy | HIGH STABILITY SEMICONDUCTOR LASERS AND SENSORS FOR III-V AND SILICON PHOTONIC INTEGRATED CIRCUITS |
US11131806B2 (en) | 2020-01-15 | 2021-09-28 | Quintessent Inc. | System comprising an integrated waveguide-coupled optically active device and method of formation |
US11631967B2 (en) | 2020-01-15 | 2023-04-18 | Quintessent Inc. | System comprising an integrated waveguide-coupled optically active device and method of formation |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3428845A (en) * | 1966-11-21 | 1969-02-18 | Rca Corp | Light-emitting semiconductor having relatively heavy outer layers for heat-sinking |
CH449799A (de) * | 1967-03-07 | 1968-01-15 | Inst Angewandte Physik | Diodenlaser |
US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
DE1812199C3 (de) * | 1968-12-02 | 1980-07-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung |
GB1383549A (en) * | 1972-07-28 | 1974-02-12 | Post Office | Optical communications systems |
US3883888A (en) * | 1973-11-12 | 1975-05-13 | Rca Corp | Efficiency light emitting diode |
-
1975
- 1975-03-11 US US05/557,250 patent/US3978426A/en not_active Expired - Lifetime
- 1975-08-29 DE DE19752538471 patent/DE2538471A1/de active Granted
- 1975-09-02 BE BE159669A patent/BE832985A/xx not_active IP Right Cessation
- 1975-09-02 SE SE7509739A patent/SE403011B/xx not_active IP Right Cessation
- 1975-09-05 ES ES440764A patent/ES440764A1/es not_active Expired
- 1975-09-05 GB GB36603/75A patent/GB1530801A/en not_active Expired
- 1975-09-05 NL NLAANVRAGE7510493,A patent/NL183746C/xx not_active IP Right Cessation
- 1975-09-05 GB GB20209/78A patent/GB1530802A/en not_active Expired
- 1975-09-05 IT IT69232/75A patent/IT1047165B/it active
- 1975-09-05 FR FR7527320A patent/FR2313779A1/fr active Granted
- 1975-09-06 JP JP50107589A patent/JPS5856990B2/ja not_active Expired
- 1975-10-09 CA CA237,315A patent/CA1044356A/en not_active Expired
-
1976
- 1976-01-22 ES ES444528A patent/ES444528A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS51104843A (it) | 1976-09-17 |
ES444528A1 (es) | 1977-06-16 |
CA1044356A (en) | 1978-12-12 |
FR2313779B1 (it) | 1978-06-23 |
JPS5856990B2 (ja) | 1983-12-17 |
SE7509739L (sv) | 1976-09-13 |
NL183746C (nl) | 1989-01-02 |
BE832985A (fr) | 1975-12-31 |
DE2538471C2 (it) | 1990-04-26 |
DE2538471A1 (de) | 1976-09-23 |
NL7510493A (nl) | 1976-09-14 |
GB1530802A (en) | 1978-11-01 |
SE403011B (sv) | 1978-07-24 |
FR2313779A1 (fr) | 1976-12-31 |
GB1530801A (en) | 1978-11-01 |
NL183746B (nl) | 1988-08-01 |
ES440764A1 (es) | 1977-04-01 |
US3978426A (en) | 1976-08-31 |
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