CH449799A - Diodenlaser - Google Patents
DiodenlaserInfo
- Publication number
- CH449799A CH449799A CH335367A CH335367A CH449799A CH 449799 A CH449799 A CH 449799A CH 335367 A CH335367 A CH 335367A CH 335367 A CH335367 A CH 335367A CH 449799 A CH449799 A CH 449799A
- Authority
- CH
- Switzerland
- Prior art keywords
- diode laser
- diode
- laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH335367A CH449799A (de) | 1967-03-07 | 1967-03-07 | Diodenlaser |
DE19671589967 DE1589967C (de) | 1967-03-07 | 1967-09-27 | Diodenlaser |
FR126163A FR1542020A (fr) | 1967-03-07 | 1967-10-27 | Diode laser |
NL6715182A NL6715182A (de) | 1967-03-07 | 1967-11-09 | |
US708128A US3576501A (en) | 1967-03-07 | 1968-02-26 | Diode laser having a roughened n-zone just below the junction |
GB10421/68A GB1147850A (en) | 1967-03-07 | 1968-03-04 | Improvements in or relating to diode lasers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH335367A CH449799A (de) | 1967-03-07 | 1967-03-07 | Diodenlaser |
Publications (1)
Publication Number | Publication Date |
---|---|
CH449799A true CH449799A (de) | 1968-01-15 |
Family
ID=4254133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH335367A CH449799A (de) | 1967-03-07 | 1967-03-07 | Diodenlaser |
Country Status (4)
Country | Link |
---|---|
US (1) | US3576501A (de) |
CH (1) | CH449799A (de) |
GB (1) | GB1147850A (de) |
NL (1) | NL6715182A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740661A (en) * | 1969-06-06 | 1973-06-19 | Bell Telephone Labor Inc | Minor lobe suppression in semiconductor injection lasers |
US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
US3978426A (en) * | 1975-03-11 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterostructure devices including tapered optical couplers |
DE102012106943B4 (de) * | 2012-07-30 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3431512A (en) * | 1964-06-29 | 1969-03-04 | Union Carbide Corp | Junction laser with controlled output |
-
1967
- 1967-03-07 CH CH335367A patent/CH449799A/de unknown
- 1967-11-09 NL NL6715182A patent/NL6715182A/xx unknown
-
1968
- 1968-02-26 US US708128A patent/US3576501A/en not_active Expired - Lifetime
- 1968-03-04 GB GB10421/68A patent/GB1147850A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1589967A1 (de) | 1970-05-14 |
US3576501A (en) | 1971-04-27 |
DE1589967B2 (de) | 1972-06-22 |
GB1147850A (en) | 1969-04-10 |
NL6715182A (de) | 1968-09-09 |
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