NL7704226A - Halfgeleider laserinrichting. - Google Patents
Halfgeleider laserinrichting.Info
- Publication number
- NL7704226A NL7704226A NL7704226A NL7704226A NL7704226A NL 7704226 A NL7704226 A NL 7704226A NL 7704226 A NL7704226 A NL 7704226A NL 7704226 A NL7704226 A NL 7704226A NL 7704226 A NL7704226 A NL 7704226A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4246976A JPS52127085A (en) | 1976-04-16 | 1976-04-16 | Semiconductor laser |
JP6000976A JPS52143787A (en) | 1976-05-26 | 1976-05-26 | Semiconductor laser |
JP594677A JPS5391684A (en) | 1977-01-24 | 1977-01-24 | Semiconductor laser |
JP594577A JPS5391683A (en) | 1977-01-24 | 1977-01-24 | Semiconductor laser |
JP594477A JPS5391682A (en) | 1977-01-24 | 1977-01-24 | Semiconductor laser |
JP2480677A JPS53110488A (en) | 1977-03-09 | 1977-03-09 | Semiconductor laser |
JP2480777A JPS53110489A (en) | 1977-03-09 | 1977-03-09 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7704226A true NL7704226A (nl) | 1977-10-18 |
Family
ID=27563333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7704226A NL7704226A (nl) | 1976-04-16 | 1977-04-18 | Halfgeleider laserinrichting. |
Country Status (5)
Country | Link |
---|---|
US (2) | US4326176A (nl) |
DE (1) | DE2716750C2 (nl) |
FR (1) | FR2348589A1 (nl) |
GB (1) | GB1577250A (nl) |
NL (1) | NL7704226A (nl) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0061220A1 (en) * | 1981-03-23 | 1982-09-29 | Koninklijke Philips Electronics N.V. | Semiconductor laser having at least two radiation beams, and method of manufacturing same |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
JPS5390890A (en) * | 1977-01-21 | 1978-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
DE2861465D1 (en) * | 1977-08-01 | 1982-02-18 | Hitachi Ltd | Semiconductor laser device |
US4185256A (en) * | 1978-01-13 | 1980-01-22 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
US4317085A (en) * | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
JPS56157082A (en) * | 1980-05-09 | 1981-12-04 | Hitachi Ltd | Semiconductor laser device and manufacture |
US4348763A (en) * | 1980-08-07 | 1982-09-07 | Hewlett-Packard Company | Multiple stripe leaky mode laser |
JPS57130490A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor laser device |
GB2114808B (en) * | 1981-12-01 | 1985-10-09 | Standard Telephones Cables Ltd | Semiconductor laser manufacture |
JPS58132986A (ja) * | 1982-02-03 | 1983-08-08 | Hitachi Ltd | 半導体レ−ザ装置 |
US4504952A (en) * | 1982-06-01 | 1985-03-12 | At&T Bell Laboratories | Stripe-guide TJS laser |
FR2530080B1 (fr) * | 1982-07-06 | 1985-11-08 | Thomson Csf | Contact ohmique localisateur dans la couche de contact d'un dispositif semi-conducteur emetteur de lumiere |
JPS5997595A (ja) * | 1982-11-22 | 1984-06-05 | Fujitsu Ltd | 液相エピタキシヤル成長方法 |
US4613387A (en) * | 1983-02-28 | 1986-09-23 | Itt Industries Inc. | Injection laser manufacture |
NL8301331A (nl) * | 1983-04-15 | 1984-11-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. |
US4547396A (en) * | 1983-06-17 | 1985-10-15 | Rca Corporation | Method of making a laser array |
WO1985000076A1 (en) * | 1983-06-17 | 1985-01-03 | Rca Corporation | Phase-locked semiconductor laser array and a method of making same |
DE3579929D1 (de) * | 1984-03-27 | 1990-11-08 | Matsushita Electric Ind Co Ltd | Halbleiterlaser und verfahren zu dessen fabrikation. |
US5136601A (en) * | 1984-11-19 | 1992-08-04 | Hitachi, Ltd. | Semiconductor laser |
JPS61163689A (ja) * | 1985-01-14 | 1986-07-24 | Sharp Corp | 半導体装置の製造方法 |
US4691320A (en) * | 1985-03-11 | 1987-09-01 | Rca Corporation | Semiconductor structure and devices |
JPS61222191A (ja) * | 1985-03-27 | 1986-10-02 | Mitsubishi Electric Corp | 半導体レ−ザダイオ−ド |
JPS62260120A (ja) * | 1986-05-07 | 1987-11-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体外部光変調器 |
EP0254568B1 (en) * | 1986-07-25 | 1993-10-13 | Mitsubishi Denki Kabushiki Kaisha | A semiconductor laser device |
JPS6373685A (ja) * | 1986-09-17 | 1988-04-04 | Mitsubishi Electric Corp | 半導体レ−ザアレイおよびその製造方法 |
DE3732822A1 (de) * | 1987-09-29 | 1989-04-06 | Siemens Ag | Laserdiode mit indexfuehrung, insbesondere laserdioden-array mit wellenleiterstruktur |
JPH01291481A (ja) * | 1988-05-18 | 1989-11-24 | Sharp Corp | 半導体レーザ装置 |
JPH065976A (ja) * | 1992-06-24 | 1994-01-14 | Fujitsu Ltd | 半導体レーザ装置の製造方法 |
DE69406049T2 (de) * | 1993-06-04 | 1998-04-16 | Sharp Kk | Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht |
US5546418A (en) * | 1993-07-28 | 1996-08-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser having a flat groove for selected crystal planes |
JP2956869B2 (ja) * | 1993-08-30 | 1999-10-04 | 富士通株式会社 | 半導体レーザおよびその製造方法 |
JP3573475B2 (ja) * | 1993-12-01 | 2004-10-06 | 富士写真フイルム株式会社 | レーザーダイオードポンピング固体レーザー |
JPH08279650A (ja) * | 1995-04-06 | 1996-10-22 | Mitsubishi Electric Corp | 半導体レーザ装置、及び半導体レーザ装置の製造方法 |
JPH10242557A (ja) * | 1997-02-21 | 1998-09-11 | Sony Corp | 半導体発光装置の製造方法 |
JP4387472B2 (ja) | 1998-02-18 | 2009-12-16 | 三菱電機株式会社 | 半導体レーザ |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
KR101232689B1 (ko) * | 2011-06-27 | 2013-02-13 | 서울대학교산학협력단 | 파동전파 접합구조 및 이를 이용한 파동 다이오드와 반가산기 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1388343A (fr) * | 1963-03-22 | 1965-02-05 | Philips Nv | Maser à injection |
GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
US3883821A (en) * | 1974-01-17 | 1975-05-13 | Bell Telephone Labor Inc | Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness |
CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
US3978428A (en) * | 1975-06-23 | 1976-08-31 | Xerox Corporation | Buried-heterostructure diode injection laser |
-
1977
- 1977-04-12 US US05/786,758 patent/US4326176A/en not_active Expired - Lifetime
- 1977-04-14 GB GB15645/77A patent/GB1577250A/en not_active Expired
- 1977-04-15 DE DE2716750A patent/DE2716750C2/de not_active Expired
- 1977-04-18 NL NL7704226A patent/NL7704226A/nl not_active Application Discontinuation
- 1977-04-18 FR FR7711558A patent/FR2348589A1/fr active Granted
-
1982
- 1982-04-05 US US06/365,606 patent/US4404678A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0061220A1 (en) * | 1981-03-23 | 1982-09-29 | Koninklijke Philips Electronics N.V. | Semiconductor laser having at least two radiation beams, and method of manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
US4326176A (en) | 1982-04-20 |
GB1577250A (en) | 1980-10-22 |
DE2716750C2 (de) | 1984-04-12 |
US4404678A (en) | 1983-09-13 |
FR2348589A1 (fr) | 1977-11-10 |
DE2716750A1 (de) | 1977-10-27 |
FR2348589B1 (nl) | 1982-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |