IT1025054B - Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso - Google Patents

Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso

Info

Publication number
IT1025054B
IT1025054B IT28598/74A IT2859874A IT1025054B IT 1025054 B IT1025054 B IT 1025054B IT 28598/74 A IT28598/74 A IT 28598/74A IT 2859874 A IT2859874 A IT 2859874A IT 1025054 B IT1025054 B IT 1025054B
Authority
IT
Italy
Prior art keywords
manufacturing
same
semiconductor device
stabilized semiconductor
stabilized
Prior art date
Application number
IT28598/74A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1025054B publication Critical patent/IT1025054B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT28598/74A 1973-12-03 1974-10-18 Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso IT1025054B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US420783A US3890632A (en) 1973-12-03 1973-12-03 Stabilized semiconductor devices and method of making same

Publications (1)

Publication Number Publication Date
IT1025054B true IT1025054B (it) 1978-08-10

Family

ID=23667832

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28598/74A IT1025054B (it) 1973-12-03 1974-10-18 Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso

Country Status (13)

Country Link
US (1) US3890632A (it)
JP (1) JPS5212550B2 (it)
BE (1) BE822852A (it)
BR (1) BR7409904A (it)
CA (1) CA1013481A (it)
DE (1) DE2455730C3 (it)
FR (1) FR2253286B1 (it)
GB (1) GB1447849A (it)
IN (1) IN141988B (it)
IT (1) IT1025054B (it)
NL (1) NL7415694A (it)
SE (1) SE401581B (it)
YU (1) YU36421B (it)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors
US3943555A (en) * 1974-05-02 1976-03-09 Rca Corporation SOS Bipolar transistor
US3974515A (en) * 1974-09-12 1976-08-10 Rca Corporation IGFET on an insulating substrate
JPS5138881A (ja) * 1974-09-27 1976-03-31 Kogyo Gijutsuin Zetsuenkibanjohandotaisochi
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
JPS51101476A (en) * 1975-03-04 1976-09-07 Fujitsu Ltd Handotaisochino seizohoho
JPS51135373A (en) * 1975-05-20 1976-11-24 Agency Of Ind Science & Technol Semiconductor device
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
US4054894A (en) * 1975-05-27 1977-10-18 Rca Corporation Edgeless transistor
US4015279A (en) * 1975-05-27 1977-03-29 Rca Corporation Edgeless transistor
JPS5263683A (en) * 1975-11-20 1977-05-26 Mitsubishi Electric Corp Production of semiconductor element
JPS5286088A (en) * 1976-01-13 1977-07-16 Agency Of Ind Science & Technol Manufacture of semiconductor device
US4054895A (en) * 1976-12-27 1977-10-18 Rca Corporation Silicon-on-sapphire mesa transistor having doped edges
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
US4113516A (en) * 1977-01-28 1978-09-12 Rca Corporation Method of forming a curved implanted region in a semiconductor body
JPS5396767A (en) * 1977-02-04 1978-08-24 Agency Of Ind Science & Technol Protecting circuit of semiconductor integrated circuit on insulation substrate
SE7800261L (sv) * 1977-02-28 1978-08-29 Rca Corp Sett att tillverka en halvledaranordning
US4330932A (en) * 1978-07-20 1982-05-25 The United States Of America As Represented By The Secretary Of The Navy Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas
US4178191A (en) * 1978-08-10 1979-12-11 Rca Corp. Process of making a planar MOS silicon-on-insulating substrate device
US4279069A (en) * 1979-02-21 1981-07-21 Rockwell International Corporation Fabrication of a nonvolatile memory array device
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
US4252574A (en) * 1979-11-09 1981-02-24 Rca Corporation Low leakage N-channel SOS transistors and method of making them
US4393572A (en) * 1980-05-29 1983-07-19 Rca Corporation Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques
US4277884A (en) * 1980-08-04 1981-07-14 Rca Corporation Method for forming an improved gate member utilizing special masking and oxidation to eliminate projecting points on silicon islands
US4313809A (en) * 1980-10-15 1982-02-02 Rca Corporation Method of reducing edge current leakage in N channel silicon-on-sapphire devices
US4545113A (en) * 1980-10-23 1985-10-08 Fairchild Camera & Instrument Corporation Process for fabricating a lateral transistor having self-aligned base and base contact
FR2566583B1 (fr) * 1984-06-22 1986-09-19 Thomson Csf Procede de fabrication d'au moins un transistor a effet de champ en couche mince, et transistor obtenu par ce procede
US4649626A (en) * 1985-07-24 1987-03-17 Hughes Aircraft Company Semiconductor on insulator edge doping process using an expanded mask
US4662059A (en) * 1985-09-19 1987-05-05 Rca Corporation Method of making stabilized silicon-on-insulator field-effect transistors having 100 oriented side and top surfaces
US4751554A (en) * 1985-09-27 1988-06-14 Rca Corporation Silicon-on-sapphire integrated circuit and method of making the same
US4758529A (en) * 1985-10-31 1988-07-19 Rca Corporation Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
US4729006A (en) * 1986-03-17 1988-03-01 International Business Machines Corporation Sidewall spacers for CMOS circuit stress relief/isolation and method for making
US4735917A (en) * 1986-04-28 1988-04-05 General Electric Company Silicon-on-sapphire integrated circuits
US4722912A (en) * 1986-04-28 1988-02-02 Rca Corporation Method of forming a semiconductor structure
US4755481A (en) * 1986-05-15 1988-07-05 General Electric Company Method of making a silicon-on-insulator transistor
US4918498A (en) * 1987-05-12 1990-04-17 General Electric Company Edgeless semiconductor device
US4864380A (en) * 1987-05-12 1989-09-05 General Electric Company Edgeless CMOS device
US4791464A (en) * 1987-05-12 1988-12-13 General Electric Company Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same
GB2209433B (en) * 1987-09-04 1990-06-13 Plessey Co Plc Semi-conductor devices
GB2211022B (en) * 1987-10-09 1991-10-09 Marconi Electronic Devices A semiconductor device and a process for making the device
US5053345A (en) * 1989-02-06 1991-10-01 Harris Corporation Method of edge doping SOI islands
US5028564A (en) * 1989-04-27 1991-07-02 Chang Chen Chi P Edge doping processes for mesa structures in SOS and SOI devices
US5250818A (en) * 1991-03-01 1993-10-05 Board Of Trustees Of Leland Stanford University Low temperature germanium-silicon on insulator thin-film transistor
JPH0793363B2 (ja) * 1991-09-25 1995-10-09 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
JPH05335529A (ja) * 1992-05-28 1993-12-17 Fujitsu Ltd 半導体装置およびその製造方法
GB9315798D0 (en) * 1993-07-30 1993-09-15 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film transistors
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) * 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6147362A (en) * 1997-03-17 2000-11-14 Honeywell International Inc. High performance display pixel for electronics displays
KR19990039940A (ko) * 1997-11-15 1999-06-05 구자홍 박막트랜지스터 제조방법
US6686623B2 (en) * 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP2001196591A (ja) * 2000-01-13 2001-07-19 Internatl Business Mach Corp <Ibm> 薄膜トランジスタ、および薄膜トランジスタの製造方法
JP4776801B2 (ja) * 2001-04-24 2011-09-21 株式会社半導体エネルギー研究所 メモリ回路
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
CN117030078B (zh) * 2023-08-10 2024-03-15 无锡胜脉电子有限公司 一种硅力敏感芯片及其制备方法、封装方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
US3486892A (en) * 1966-01-13 1969-12-30 Raytheon Co Preferential etching technique
GB1130058A (en) * 1966-10-03 1968-10-09 Hughes Aircraft Co Thin film space-charge-limited current triode
FR2021973A7 (it) * 1968-10-31 1970-07-24 Nat Semiconductor Corp
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
DE2044792A1 (de) * 1970-09-10 1972-03-23 Ibm Deutschland Feldeffekt-Transistor
DE2221865A1 (de) * 1971-05-08 1972-11-23 Matsushita Electric Ind Co Ltd Halbleitervorrichtung mit isoliertem Tor
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor
US3823352A (en) * 1972-12-13 1974-07-09 Bell Telephone Labor Inc Field effect transistor structures and methods

Also Published As

Publication number Publication date
JPS5212550B2 (it) 1977-04-07
BE822852A (fr) 1975-04-01
US3890632A (en) 1975-06-17
NL7415694A (nl) 1975-06-05
DE2455730A1 (de) 1975-06-05
BR7409904A (pt) 1976-05-25
IN141988B (it) 1977-05-14
FR2253286A1 (it) 1975-06-27
JPS50106591A (it) 1975-08-22
GB1447849A (en) 1976-09-02
FR2253286B1 (it) 1978-09-22
SE401581B (sv) 1978-05-16
CA1013481A (en) 1977-07-05
DE2455730B2 (de) 1981-04-23
YU36421B (en) 1983-06-30
YU313374A (en) 1981-11-13
DE2455730C3 (de) 1985-08-08
SE7415065L (it) 1975-06-04
AU7578974A (en) 1976-05-27

Similar Documents

Publication Publication Date Title
IT1025054B (it) Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso
SE381535B (sv) Halvledarstruktur och forfarande for dess framstellning
IT982456B (it) Procedimento per la fabbricazione di dispositivi semiconduttori e di spositivo ottenuto con il procedi mento
IT1032591B (it) Procedimento per la fabbricazione di dispostivi semiconduttori
IT955675B (it) Dispositivo semiconduttore e metodo per la fabbricazione dello stesso
CA925224A (en) Semiconductor device and method of manufacturing the same
IT1025022B (it) Metodo di fabbricazione di materiali semiconduttori n e dispositivo semiconduttore realizzato con l impiego di tale metodo
BR7404876D0 (pt) Dispositivo semicondutor
PL200127A1 (pl) Sposob wytwarzania przyrzadu polprzewodnikowego
IT1010905B (it) Dispositivo di fissaggio metodo per la formazione dello stesso ed apparecchiatura relativa
IT1010166B (it) Metodo per la fabbricazione di dispositivi semiconduttori
IT1028325B (it) Transistore bipolare e metodo di fabbricazione dello stesso
IT1008927B (it) Complesso di conduttori e metodo per fabbricarlo
IT971012B (it) Sacchetto filtrante allungato e metodo di fabbricazione dello stesso
IT1027983B (it) Dispositivo spinterometro e metodo di costruzione dello stesso
IT1009603B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso
IT983793B (it) Dispositivo semiconduttore e me todo per la fabbricazione dello stesso
IT995885B (it) Componente a semiconduttore e meto do per la fabbricazione dello stesso
IT1010922B (it) Dispositivo a rifrangenza e metodo di fabbricazione dello stesso
IT7819995A0 (it) Dispositivo semiconduttore e metodo di incapsulamento dello stesso.
IT969818B (it) Elemento filettato di fissaggio e metodo di fabbricazione dello stesso
IT991003B (it) Dispositivo getter e metodo di utilizzazione dello stesso
IT1054204B (it) Metodo per la fabricazione di dispositivi semiconduttori fabbricati in accordo con tale metodo
AT316652B (de) Stabilisiertes Halbleiterbauelement
IT978097B (it) Dispositivo semiconduttore e me todo per la fabbricazione dello stesso