HK1141628A1 - Process for preparing an electronic device - Google Patents
Process for preparing an electronic deviceInfo
- Publication number
- HK1141628A1 HK1141628A1 HK10107975.2A HK10107975A HK1141628A1 HK 1141628 A1 HK1141628 A1 HK 1141628A1 HK 10107975 A HK10107975 A HK 10107975A HK 1141628 A1 HK1141628 A1 HK 1141628A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- preparing
- electronic device
- ofets
- field effect
- protection layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07008369 | 2007-04-25 | ||
PCT/EP2008/002484 WO2008131836A1 (en) | 2007-04-25 | 2008-03-28 | Process for preparing an electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1141628A1 true HK1141628A1 (en) | 2010-11-12 |
Family
ID=39547090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK10107975.2A HK1141628A1 (en) | 2007-04-25 | 2010-08-20 | Process for preparing an electronic device |
Country Status (9)
Country | Link |
---|---|
US (1) | US8637343B2 (ja) |
EP (1) | EP2140510A1 (ja) |
JP (1) | JP5657379B2 (ja) |
KR (1) | KR101475097B1 (ja) |
CN (1) | CN101669225B (ja) |
GB (1) | GB2461670B (ja) |
HK (1) | HK1141628A1 (ja) |
TW (1) | TWI460897B (ja) |
WO (1) | WO2008131836A1 (ja) |
Families Citing this family (32)
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JP5309532B2 (ja) * | 2007-11-08 | 2013-10-09 | サンケン電気株式会社 | 窒化物系化合物半導体装置 |
GB0724774D0 (en) | 2007-12-19 | 2008-01-30 | Cambridge Display Tech Ltd | Organic thin film transistors, active matrix organic optical devices and methods of making the same |
WO2009129912A1 (en) * | 2008-04-24 | 2009-10-29 | Merck Patent Gmbh | Electronic device |
GB2465597A (en) * | 2008-11-24 | 2010-05-26 | Merck Patent Gmbh | Magnetron sputter ion plating |
CN102804439B (zh) * | 2009-05-25 | 2015-05-27 | 巴斯夫欧洲公司 | 可交联的电介质及其制备方法和用途 |
US8211782B2 (en) | 2009-10-23 | 2012-07-03 | Palo Alto Research Center Incorporated | Printed material constrained by well structures |
JP5618524B2 (ja) * | 2009-11-18 | 2014-11-05 | 公益財団法人九州先端科学技術研究所 | デバイス、薄膜トランジスタおよびその製造方法 |
US8765894B2 (en) * | 2009-12-11 | 2014-07-01 | Promerus, Llc | Norbornene-type polymers having quaternary ammonium functionality |
KR20120123663A (ko) * | 2009-12-11 | 2012-11-09 | 프로메러스, 엘엘씨 | 사차 암모늄 관능성을 갖는 노르보르넨-타입 중합체 |
US20110180785A1 (en) * | 2010-01-27 | 2011-07-28 | Christoph Wilhelm Sele | Transistor structure comprising a chemical additive, a display and an electronic apparatus |
CN105440540A (zh) * | 2010-09-02 | 2016-03-30 | 默克专利股份有限公司 | 用于电子器件的夹层 |
EP2611841B1 (en) * | 2010-09-02 | 2015-10-28 | Merck Patent GmbH | Gate insulator layer for electronic devices |
US8367459B2 (en) * | 2010-12-14 | 2013-02-05 | Sharp Laboratories Of America, Inc. | Organic semiconductor interface preparation |
DE102010063294B4 (de) * | 2010-12-16 | 2019-07-11 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung von Metallisierungssystemen von Halbleiterbauelementen, die eine Kupfer/Silizium-Verbindung als ein Barrierenmaterial aufweisen |
JP5630364B2 (ja) | 2011-04-11 | 2014-11-26 | 大日本印刷株式会社 | 有機半導体素子の製造方法および有機半導体素子 |
JP5598410B2 (ja) | 2011-04-11 | 2014-10-01 | 大日本印刷株式会社 | 有機半導体素子の製造方法および有機半導体素子 |
TWI458150B (zh) * | 2012-01-11 | 2014-10-21 | E Ink Holdings Inc | 薄膜電晶體 |
JP5974588B2 (ja) * | 2012-03-30 | 2016-08-23 | 三菱化学株式会社 | 電界効果トランジスタ、表示用パネル及び重合体 |
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US20140061869A1 (en) * | 2012-08-31 | 2014-03-06 | Shelby F. Nelson | Electronic element including dielectric stack |
JP6499966B2 (ja) * | 2012-09-21 | 2019-04-10 | メルク パテント ゲーエムベーハー | 有機半導体電子デバイス |
KR101638431B1 (ko) * | 2015-02-11 | 2016-07-11 | 영남대학교 산학협력단 | 유기 전계 효과 트랜지스터 및 전자 소자 |
US10172760B2 (en) | 2017-01-19 | 2019-01-08 | Jennifer Hendrix | Responsive route guidance and identification system |
CN110364623B (zh) * | 2018-04-11 | 2021-05-18 | 东北师范大学 | 一种随形贴合有机场效应晶体管及晶体管阵列和它们的制备方法 |
GB201810710D0 (en) | 2018-06-29 | 2018-08-15 | Smartkem Ltd | Sputter Protective Layer For Organic Electronic Devices |
CN109088000B (zh) * | 2018-08-22 | 2022-04-12 | 宁波石墨烯创新中心有限公司 | 一种有机薄膜晶体管及其制备方法 |
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KR20210149957A (ko) * | 2020-06-02 | 2021-12-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
JP7455005B2 (ja) | 2020-06-16 | 2024-03-25 | 文化シヤッター株式会社 | 建具 |
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Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08236775A (ja) | 1995-03-01 | 1996-09-13 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
KR100660384B1 (ko) * | 1998-03-17 | 2006-12-21 | 세이코 엡슨 가부시키가이샤 | 표시장치의 제조방법 |
JP2000269504A (ja) * | 1999-03-16 | 2000-09-29 | Hitachi Ltd | 半導体装置、その製造方法及び液晶表示装置 |
GB9930217D0 (en) * | 1999-12-21 | 2000-02-09 | Univ Cambridge Tech | Solutiion processed transistors |
JP2003179234A (ja) * | 2001-09-05 | 2003-06-27 | Konica Corp | 有機半導体素子およびその製造方法 |
AU2002343058A1 (en) * | 2001-12-19 | 2003-06-30 | Merck Patent Gmbh | Organic field effect transistor with an organic dielectric |
JP4254123B2 (ja) | 2002-04-08 | 2009-04-15 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタおよびその製造方法 |
JP2004055654A (ja) * | 2002-07-17 | 2004-02-19 | Pioneer Electronic Corp | 有機半導体素子 |
JP2004221573A (ja) * | 2002-12-26 | 2004-08-05 | Konica Minolta Holdings Inc | 電気回路の製造方法、有機薄膜トランジスタ素子の製造方法、これらの製造方法で製造された電気回路、有機薄膜トランジスタ素子及び有機薄膜トランジスタ素子シート |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
CN1282259C (zh) * | 2003-03-03 | 2006-10-25 | 中国科学院长春应用化学研究所 | 含有保护层的有机半导体场效应晶体管及制作方法 |
JP2004363560A (ja) * | 2003-05-09 | 2004-12-24 | Seiko Epson Corp | 基板、デバイス、デバイス製造方法、アクティブマトリクス基板の製造方法及び電気光学装置並びに電子機器 |
US7462989B2 (en) * | 2003-05-19 | 2008-12-09 | Panasonic Corporation | Plasma display panel, method for producing same and material for protective layer of such plasma display panel |
JP2005136383A (ja) * | 2003-10-09 | 2005-05-26 | Canon Inc | 有機半導体素子、その製造方法および有機半導体装置 |
US20050194640A1 (en) * | 2003-10-17 | 2005-09-08 | Lazarev Pavel I. | Organic thin-film transistor |
KR101007813B1 (ko) * | 2003-11-24 | 2011-01-14 | 삼성전자주식회사 | 완충층을 포함하는 유기박막 트랜지스터 |
JP4385812B2 (ja) * | 2004-03-26 | 2009-12-16 | 株式会社日立製作所 | 薄膜トランジスタおよびその製造方法 |
JP4646539B2 (ja) * | 2004-03-29 | 2011-03-09 | エーユー オプトロニクス コーポレイション | 液晶表示装置とその製造方法 |
KR100560796B1 (ko) * | 2004-06-24 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조방법 |
US7557369B2 (en) * | 2004-07-29 | 2009-07-07 | Samsung Mobile Display Co., Ltd. | Display and method for manufacturing the same |
JP4431081B2 (ja) * | 2004-08-30 | 2010-03-10 | エルジー ディスプレイ カンパニー リミテッド | 有機薄膜トランジスタの製造方法及び液晶表示素子の製造方法 |
GB2428889B (en) | 2004-08-30 | 2007-12-12 | Lg Philips Lcd Co Ltd | Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same |
KR100675639B1 (ko) * | 2004-08-30 | 2007-02-02 | 엘지.필립스 엘시디 주식회사 | 유기 박막트랜지스터 및 액정표시소자의 제조방법 |
JP4892830B2 (ja) | 2004-11-19 | 2012-03-07 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
KR20060064264A (ko) * | 2004-12-08 | 2006-06-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101086159B1 (ko) * | 2005-01-07 | 2011-11-25 | 삼성전자주식회사 | 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 |
JP2006261312A (ja) * | 2005-03-16 | 2006-09-28 | Ricoh Co Ltd | 半導体装置とその製造方法およびアクティブマトリックス表示装置 |
US20060231908A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | Multilayer gate dielectric |
US7560735B2 (en) * | 2005-04-22 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, organic transistor, light-emitting device, and electronic device |
KR100647693B1 (ko) * | 2005-05-24 | 2006-11-23 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
US7915122B2 (en) * | 2005-06-08 | 2011-03-29 | Nantero, Inc. | Self-aligned cell integration scheme |
KR101209046B1 (ko) * | 2005-07-27 | 2012-12-06 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법 |
US7816263B2 (en) * | 2005-08-03 | 2010-10-19 | Konica Minolta Holdings, Inc. | Method for manufacturing thin film transistor |
JP2007053147A (ja) * | 2005-08-16 | 2007-03-01 | Sony Corp | 有機半導体装置及びその製造方法 |
JP5188046B2 (ja) * | 2005-09-06 | 2013-04-24 | キヤノン株式会社 | 半導体素子 |
KR101197053B1 (ko) * | 2005-09-30 | 2012-11-06 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
KR100754395B1 (ko) * | 2006-02-10 | 2007-08-31 | 삼성전자주식회사 | 유기 전자발광 디스플레이 및 그 제조방법 |
US7851788B2 (en) * | 2006-02-28 | 2010-12-14 | Pioneer Corporation | Organic transistor and manufacturing method thereof |
KR101004735B1 (ko) * | 2008-05-07 | 2011-01-04 | 한국전자통신연구원 | 유기 박막 트랜지스터, 이의 제조방법 및 이를 이용한바이오센서 |
-
2008
- 2008-03-28 JP JP2010504482A patent/JP5657379B2/ja not_active Expired - Fee Related
- 2008-03-28 KR KR1020097024495A patent/KR101475097B1/ko not_active IP Right Cessation
- 2008-03-28 EP EP08734857A patent/EP2140510A1/en not_active Withdrawn
- 2008-03-28 GB GB0919900.1A patent/GB2461670B/en active Active
- 2008-03-28 WO PCT/EP2008/002484 patent/WO2008131836A1/en active Application Filing
- 2008-03-28 CN CN2008800133097A patent/CN101669225B/zh not_active Expired - Fee Related
- 2008-03-28 US US12/597,246 patent/US8637343B2/en active Active
- 2008-04-22 TW TW097114645A patent/TWI460897B/zh active
-
2010
- 2010-08-20 HK HK10107975.2A patent/HK1141628A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP5657379B2 (ja) | 2015-01-21 |
CN101669225B (zh) | 2013-03-13 |
GB2461670A (en) | 2010-01-13 |
WO2008131836A1 (en) | 2008-11-06 |
US8637343B2 (en) | 2014-01-28 |
TW200910658A (en) | 2009-03-01 |
GB0919900D0 (en) | 2009-12-30 |
KR20100017334A (ko) | 2010-02-16 |
CN101669225A (zh) | 2010-03-10 |
JP2010525587A (ja) | 2010-07-22 |
TWI460897B (zh) | 2014-11-11 |
EP2140510A1 (en) | 2010-01-06 |
KR101475097B1 (ko) | 2014-12-23 |
GB2461670B (en) | 2012-05-16 |
US20100108999A1 (en) | 2010-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20170328 |