HK1060158A1 - A method of depositing a thin film on a substrate,a substrate and a diamond film produced by the me thod - Google Patents

A method of depositing a thin film on a substrate,a substrate and a diamond film produced by the me thod

Info

Publication number
HK1060158A1
HK1060158A1 HK04102851A HK04102851A HK1060158A1 HK 1060158 A1 HK1060158 A1 HK 1060158A1 HK 04102851 A HK04102851 A HK 04102851A HK 04102851 A HK04102851 A HK 04102851A HK 1060158 A1 HK1060158 A1 HK 1060158A1
Authority
HK
Hong Kong
Prior art keywords
substrate
thod
depositing
thin film
film produced
Prior art date
Application number
HK04102851A
Other languages
English (en)
Inventor
Astghik Tamanyan
Grigori Tamanyan
Original Assignee
Novel Laser Technologies Pty L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novel Laser Technologies Pty L filed Critical Novel Laser Technologies Pty L
Publication of HK1060158A1 publication Critical patent/HK1060158A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C23C14/0611—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
HK04102851A 2000-09-20 2004-04-22 A method of depositing a thin film on a substrate,a substrate and a diamond film produced by the me thod HK1060158A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPR0261A AUPR026100A0 (en) 2000-09-20 2000-09-20 Deposition of thin films by laser ablation
PCT/AU2001/001179 WO2002024972A1 (en) 2000-09-20 2001-09-20 Deposition of thin films by laser ablation

Publications (1)

Publication Number Publication Date
HK1060158A1 true HK1060158A1 (en) 2004-07-30

Family

ID=3824329

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04102851A HK1060158A1 (en) 2000-09-20 2004-04-22 A method of depositing a thin film on a substrate,a substrate and a diamond film produced by the me thod

Country Status (14)

Country Link
US (1) US20040033702A1 (xx)
EP (1) EP1332239A4 (xx)
JP (1) JP2004509233A (xx)
KR (1) KR20030045082A (xx)
CN (1) CN1291059C (xx)
AU (1) AUPR026100A0 (xx)
CA (1) CA2456871A1 (xx)
EA (1) EA006092B1 (xx)
HK (1) HK1060158A1 (xx)
IL (1) IL154914A0 (xx)
MX (1) MXPA03002387A (xx)
MY (1) MY134928A (xx)
TW (1) TW574399B (xx)
WO (1) WO2002024972A1 (xx)

Families Citing this family (30)

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US20050067389A1 (en) * 2003-09-25 2005-03-31 Greer James A. Target manipulation for pulsed laser deposition
JP5091686B2 (ja) * 2005-02-23 2012-12-05 ピコデオン エルティーディー オイ パルスレーザ蒸着方法
CN1316058C (zh) * 2005-03-24 2007-05-16 上海交通大学 溅射TiO2使聚合物微流芯片表面改性的方法
JP4500941B2 (ja) * 2005-03-24 2010-07-14 独立行政法人産業技術総合研究所 クラスター膜製造方法および製造装置
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
FI20060178L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Pinnoitusmenetelmä
FI20060177L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Menetelmä tuottaa hyvälaatuisia pintoja ja hyvälaatuisen pinnan omaava tuote
WO2007096460A2 (en) * 2006-02-23 2007-08-30 Picodeon Ltd Oy Surface treatment technique and surface treatment apparatus associated with ablation technology
FI20060181L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Menetelmä tuottaa pintoja ja materiaalia laserablaation avulla
RU2467850C2 (ru) * 2006-02-23 2012-11-27 Пикодеон Лтд Ой Покрытие из нитрида углерода и изделие с таким покрытием
US7608308B2 (en) * 2006-04-17 2009-10-27 Imra America, Inc. P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
RU2316612C1 (ru) * 2006-06-15 2008-02-10 ООО "Объединенный центр исследований и разработок" Способ получения пленочных покрытий посредством лазерной абляции
ATE510042T1 (de) * 2007-11-21 2011-06-15 Otb Solar Bv Verfahren und system zur kontinuierlichen oder halbkontinuierlichen laserunterstützen abscheidung
PL2159300T3 (pl) * 2008-08-25 2012-06-29 Solmates Bv Sposób osadzania materiału
CN102870235B (zh) 2009-11-10 2016-11-23 免疫之光有限责任公司 用于从包括用于上变频的射频、微波能量和磁感应源的各种能量源产生发射光的上下变频***
CN103014631B (zh) * 2012-12-19 2014-08-20 河北师范大学 一种彩色Pr(Sr0.1Ca0.9)2Mn2O7薄膜的制备方法
RU2527113C1 (ru) * 2013-03-04 2014-08-27 Игорь Валерьевич Белашов Способ нанесения аморфного алмазоподобного покрытия на лезвия хирургических скальпелей
CN103196774B (zh) * 2013-04-03 2015-02-18 大连理工大学 一种测量材料耐烧蚀特性的装置
US20150017758A1 (en) * 2013-07-11 2015-01-15 Mikhael Reginevich Systems, methods, and media for laser deposition
CN103668085A (zh) * 2013-11-29 2014-03-26 武汉理工大学 脉冲激光沉积装置
EP2910664B1 (en) * 2014-02-21 2019-04-03 Solmates B.V. Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device
FI126769B (en) 2014-12-23 2017-05-15 Picodeon Ltd Oy Lighthouse type scanner with a rotating mirror and a circular target
WO2016205750A1 (en) * 2015-06-18 2016-12-22 Kevin Kremeyer Directed energy deposition to facilitate high speed applications
RU2614330C1 (ru) * 2015-11-09 2017-03-24 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Алтайский государственный университет" Способ получения тонкой наноалмазной пленки на стеклянной подложке
US10799984B2 (en) * 2017-11-15 2020-10-13 Granat Research, Ltd. Metal droplet jetting system
RU2685665C1 (ru) * 2017-11-17 2019-04-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Алтайский государственный университет" Способ получения тонких алмазных пленок
CN108342697A (zh) * 2018-01-11 2018-07-31 中国科学院微电子研究所 一种脉冲激光沉积装置及其方法
GB2585621B (en) * 2018-09-24 2022-11-16 Plasma App Ltd Carbon materials
RU197802U1 (ru) * 2019-05-06 2020-05-28 Федор Владимирович Кашаев Устройство для формирования наночастиц методом импульсной лазерной абляции мишени в жидкости
CN114311356A (zh) * 2021-12-31 2022-04-12 华侨大学 动能辅助激光诱导等离子体加工装置及方法

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JPS63227766A (ja) * 1986-10-27 1988-09-22 Hitachi Ltd 超微粒子膜の形成方法
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
DD274451A1 (de) * 1988-07-29 1989-12-20 Hochvakuum Dresden Veb Verfahren zur aufloesung bzw. entfernung von droplets aus dem plasmastrom einer lasergezuendeten vakuum-bogenentladung
US4981717A (en) * 1989-02-24 1991-01-01 Mcdonnell Douglas Corporation Diamond like coating and method of forming
DE3914476C1 (xx) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
WO1994026425A1 (en) * 1993-05-17 1994-11-24 Mcdonnell Douglas Corporation Laser absorption wave deposition process
JPH07166333A (ja) * 1993-12-16 1995-06-27 Matsushita Electric Ind Co Ltd レーザ・アブレーション装置
US5411772A (en) * 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
US5660746A (en) * 1994-10-24 1997-08-26 University Of South Florida Dual-laser process for film deposition
US5747120A (en) * 1996-03-29 1998-05-05 Regents Of The University Of California Laser ablated hard coating for microtools
US5858478A (en) * 1997-12-02 1999-01-12 The Aerospace Corporation Magnetic field pulsed laser deposition of thin films
WO2000022184A1 (en) * 1998-10-12 2000-04-20 The Regents Of The University Of California Laser deposition of thin films

Also Published As

Publication number Publication date
MY134928A (en) 2008-01-31
EP1332239A1 (en) 2003-08-06
AUPR026100A0 (en) 2000-10-12
CN1291059C (zh) 2006-12-20
IL154914A0 (en) 2003-10-31
TW574399B (en) 2004-02-01
CN1461355A (zh) 2003-12-10
US20040033702A1 (en) 2004-02-19
WO2002024972A1 (en) 2002-03-28
KR20030045082A (ko) 2003-06-09
EP1332239A4 (en) 2007-01-10
EA006092B1 (ru) 2005-08-25
JP2004509233A (ja) 2004-03-25
EA200300390A1 (ru) 2003-10-30
MXPA03002387A (es) 2003-10-14
CA2456871A1 (en) 2002-03-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100920