AU2003215669A1 - Method for coating a substrate and device for carrying out the method - Google Patents

Method for coating a substrate and device for carrying out the method

Info

Publication number
AU2003215669A1
AU2003215669A1 AU2003215669A AU2003215669A AU2003215669A1 AU 2003215669 A1 AU2003215669 A1 AU 2003215669A1 AU 2003215669 A AU2003215669 A AU 2003215669A AU 2003215669 A AU2003215669 A AU 2003215669A AU 2003215669 A1 AU2003215669 A1 AU 2003215669A1
Authority
AU
Australia
Prior art keywords
coating
substrate
carrying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003215669A
Inventor
Michael Heuken
Holger Jurgensen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2003215669A1 publication Critical patent/AU2003215669A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU2003215669A 2002-03-22 2003-03-19 Method for coating a substrate and device for carrying out the method Abandoned AU2003215669A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10212923A DE10212923A1 (en) 2002-03-22 2002-03-22 Process for coating a substrate and device for carrying out the process
DE10212923.1 2002-03-22
PCT/EP2003/002860 WO2003080893A1 (en) 2002-03-22 2003-03-19 Method for coating a substrate and device for carrying out the method

Publications (1)

Publication Number Publication Date
AU2003215669A1 true AU2003215669A1 (en) 2003-10-08

Family

ID=28050772

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003215669A Abandoned AU2003215669A1 (en) 2002-03-22 2003-03-19 Method for coating a substrate and device for carrying out the method

Country Status (7)

Country Link
EP (1) EP1488023A1 (en)
JP (1) JP2005520687A (en)
KR (1) KR20040104527A (en)
AU (1) AU2003215669A1 (en)
DE (1) DE10212923A1 (en)
TW (1) TW200304959A (en)
WO (1) WO2003080893A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10256850A1 (en) * 2002-12-04 2004-06-24 Basf Ag Process and vapor deposition of compound (s) on a support
DE10315215A1 (en) * 2003-04-03 2004-10-14 Basf Ag In-situ re-coating of catalyst beds
KR100830388B1 (en) * 2004-03-29 2008-05-20 도쿄엘렉트론가부시키가이샤 Film-forming apparatus and film-forming method
DE102006027932A1 (en) 2006-06-14 2007-12-20 Aixtron Ag Method for the deposition of layers in a process chamber used in the production of electronic components comprises using a first starting material containing two beta-diketones and a diene coordinated with a ruthenium atom
JP5043394B2 (en) * 2006-09-29 2012-10-10 東京エレクトロン株式会社 Vapor deposition apparatus and operation method thereof
DE102007030499A1 (en) * 2007-06-30 2009-01-08 Aixtron Ag Apparatus and method for depositing in particular doped layers by means of OVPD or the like
DE102008045982A1 (en) 2008-09-05 2010-03-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Functionalizing surfaces comprises activating surface to form reactive groups on surface, depositing crosslinkable component e.g. oxirane by e.g. polyaddition and chemically bonding to reactive groups of surface, followed by crosslinking
WO2011105830A2 (en) * 2010-02-26 2011-09-01 주식회사 테라세미콘 Method for producing a polycrystalline silicon layer, and apparatus for forming a metal mixed layer for same
DE102011051260A1 (en) * 2011-06-22 2012-12-27 Aixtron Se Method and device for depositing OLEDs
JP5971248B2 (en) * 2011-07-21 2016-08-17 Jsr株式会社 Method for manufacturing a substrate including a metal body
KR20150065515A (en) * 2013-12-05 2015-06-15 롬엔드하스전자재료코리아유한회사 An apparatus for purifying organic electroluminescence materials and a method therefor
DE102014100135A1 (en) 2014-01-08 2015-07-09 Aixtron Se Gas mixing device on a reactor with directional valve
DE102014115497A1 (en) * 2014-10-24 2016-05-12 Aixtron Se Tempered gas supply with diluent gas streams fed in at several points
DE102019128752A1 (en) 2019-10-24 2021-04-29 Apeva Se Process for the production of stacked OLEDs

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2794294B2 (en) * 1988-07-08 1998-09-03 科学技術振興事業団 Method and apparatus for forming oxide superconductor thick film
JPH06158306A (en) * 1992-11-27 1994-06-07 Vacuum Metallurgical Co Ltd Production of target for sputtering by ga-deposition method and device therefor
JPH09268378A (en) * 1996-04-01 1997-10-14 Dainippon Printing Co Ltd Thick film pattern forming method and thick film pattern by the method
JP3967455B2 (en) * 1998-03-30 2007-08-29 Ｄｏｗａホールディングス株式会社 Potassium-containing thin film and method for producing the same
DE10007059A1 (en) * 2000-02-16 2001-08-23 Aixtron Ag Method and device for producing coated substrates by means of condensation coating

Also Published As

Publication number Publication date
WO2003080893B1 (en) 2003-12-18
KR20040104527A (en) 2004-12-10
WO2003080893A1 (en) 2003-10-02
JP2005520687A (en) 2005-07-14
DE10212923A1 (en) 2004-01-08
EP1488023A1 (en) 2004-12-22
TW200304959A (en) 2003-10-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase