AU2002220666A1 - Method for depositing especially, crystalline layers and device for carrying out the method - Google Patents

Method for depositing especially, crystalline layers and device for carrying out the method

Info

Publication number
AU2002220666A1
AU2002220666A1 AU2002220666A AU2066602A AU2002220666A1 AU 2002220666 A1 AU2002220666 A1 AU 2002220666A1 AU 2002220666 A AU2002220666 A AU 2002220666A AU 2066602 A AU2066602 A AU 2066602A AU 2002220666 A1 AU2002220666 A1 AU 2002220666A1
Authority
AU
Australia
Prior art keywords
carrying
crystalline layers
depositing especially
depositing
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002220666A
Inventor
Michael Bremser
Martin Dauelsberg
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002220666A1 publication Critical patent/AU2002220666A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002220666A 2000-11-17 2001-10-27 Method for depositing especially, crystalline layers and device for carrying out the method Abandoned AU2002220666A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10057134.4 2000-11-17
DE10057134A DE10057134A1 (en) 2000-11-17 2000-11-17 Process for depositing crystalline layers onto crystalline substrates in a process chamber of a CVD reactor comprises adjusting the kinematic viscosity of the carrier gas mixed
PCT/EP2001/012467 WO2002044445A1 (en) 2000-11-17 2001-10-27 Method for depositing especially, crystalline layers and device for carrying out the method

Publications (1)

Publication Number Publication Date
AU2002220666A1 true AU2002220666A1 (en) 2002-06-11

Family

ID=7663706

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002220666A Abandoned AU2002220666A1 (en) 2000-11-17 2001-10-27 Method for depositing especially, crystalline layers and device for carrying out the method

Country Status (7)

Country Link
US (1) US6972050B2 (en)
JP (1) JP4303966B2 (en)
KR (1) KR20030091937A (en)
AU (1) AU2002220666A1 (en)
DE (1) DE10057134A1 (en)
TW (1) TW574446B (en)
WO (1) WO2002044445A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10320597A1 (en) * 2003-04-30 2004-12-02 Aixtron Ag Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned
DE102004009130A1 (en) * 2004-02-25 2005-09-15 Aixtron Ag Inlet system for a MOCVD reactor
JP4598568B2 (en) * 2005-03-09 2010-12-15 大陽日酸株式会社 Vapor growth equipment
DE102005056320A1 (en) * 2005-11-25 2007-06-06 Aixtron Ag CVD reactor with a gas inlet member
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090141436A1 (en) * 2007-11-30 2009-06-04 Yoshimichi Matsuoka Trim element for housing of computing device
EP2353176A4 (en) * 2008-11-07 2013-08-28 Asm Inc Reaction chamber
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8491720B2 (en) 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US8138069B2 (en) * 2009-04-24 2012-03-20 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group III depositions
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (en) 2011-03-18 2016-05-21 應用材料股份有限公司 Showerhead assembly
DE102011054566A1 (en) * 2011-10-18 2013-04-18 Aixtron Se Method for separating multi-component metal-organic semiconductor layers on substrate, involves enabling process gas total flow so that partial fluxes are introduced in process chamber to optimize lateral homogeneity on deposited layer
DE102011056538A1 (en) 2011-12-16 2013-06-20 Aixtron Se Method for removing unwanted residues of process chamber of chemical vapor deposition reactor, involves forming non-volatile intermediate, so that surface coverage degree of residue is increased/decreased at respective phases of cycle
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
TWI624561B (en) * 2016-08-12 2018-05-21 漢民科技股份有限公司 Gas injector for semiconductor processes and film deposition apparatus
RU2673515C2 (en) 2017-02-02 2018-11-27 Общество С Ограниченной Ответственностью "Монолюм" Gases to the reactor supplying method for the group iii metals nitrides based epitaxial structures growing and device for its implementation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691020B2 (en) * 1986-02-14 1994-11-14 日本電信電話株式会社 Vapor growth method and apparatus
US4844006A (en) * 1988-03-07 1989-07-04 Akzo America Inc. Apparatus to provide a vaporized reactant for chemical-vapor deposition
JPH04175294A (en) * 1990-11-09 1992-06-23 Fujitsu Ltd Vapor growth equipment
EP0548990B1 (en) * 1991-12-26 1997-03-12 Canon Kabushiki Kaisha Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
DE19855637A1 (en) * 1998-12-02 2000-06-15 Aixtron Ag Process and system for semiconductor crystal production with temperature management

Also Published As

Publication number Publication date
WO2002044445A9 (en) 2003-08-07
KR20030091937A (en) 2003-12-03
TW574446B (en) 2004-02-01
WO2002044445A1 (en) 2002-06-06
DE10057134A1 (en) 2002-05-23
US6972050B2 (en) 2005-12-06
US20040013801A1 (en) 2004-01-22
JP4303966B2 (en) 2009-07-29
JP2004514642A (en) 2004-05-20

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