HK1057584A1 - Thick single crystal diamond layer, method for making it and gemstones produced from the layer - Google Patents
Thick single crystal diamond layer, method for making it and gemstones produced from the layerInfo
- Publication number
- HK1057584A1 HK1057584A1 HK04100293A HK04100293A HK1057584A1 HK 1057584 A1 HK1057584 A1 HK 1057584A1 HK 04100293 A HK04100293 A HK 04100293A HK 04100293 A HK04100293 A HK 04100293A HK 1057584 A1 HK1057584 A1 HK 1057584A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- layer
- single crystal
- making
- crystal diamond
- thick single
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
- A44C17/00—Gems or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Drying Of Semiconductors (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0014690A GB0014690D0 (en) | 2000-06-15 | 2000-06-15 | Diamond |
GB0106929A GB0106929D0 (en) | 2001-03-20 | 2001-03-20 | Diamond |
PCT/IB2001/001040 WO2001096634A1 (en) | 2000-06-15 | 2001-06-14 | Thick single crystal diamond layer method for making it and gemstones produced from the layer |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1057584A1 true HK1057584A1 (en) | 2004-04-08 |
Family
ID=26244496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK04100293A HK1057584A1 (en) | 2000-06-15 | 2004-01-15 | Thick single crystal diamond layer, method for making it and gemstones produced from the layer |
Country Status (17)
Country | Link |
---|---|
US (3) | US7128974B2 (cs) |
EP (2) | EP1290251B8 (cs) |
JP (1) | JP4469552B2 (cs) |
KR (1) | KR100839707B1 (cs) |
CN (1) | CN1210445C (cs) |
AT (1) | ATE311486T1 (cs) |
AU (2) | AU6624601A (cs) |
CA (1) | CA2412855C (cs) |
CZ (1) | CZ302229B6 (cs) |
DE (1) | DE60115435T2 (cs) |
ES (1) | ES2252244T3 (cs) |
GB (1) | GB2379451B (cs) |
HK (1) | HK1057584A1 (cs) |
IL (2) | IL153381A0 (cs) |
RU (1) | RU2287028C2 (cs) |
TW (1) | TWI250231B (cs) |
WO (1) | WO2001096634A1 (cs) |
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US8591856B2 (en) | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
DE60135653D1 (de) * | 2000-06-15 | 2008-10-16 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
WO2003014427A1 (en) | 2001-08-08 | 2003-02-20 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
DE10153310A1 (de) * | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
GB0130004D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
GB0220772D0 (en) * | 2002-09-06 | 2002-10-16 | Diamanx Products Ltd | Coloured diamond |
GB0220767D0 (en) * | 2002-09-06 | 2002-10-16 | Diamanx Products Ltd | Diamond radiation detector |
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DE60135653D1 (de) * | 2000-06-15 | 2008-10-16 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
GB0130004D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
KR101052395B1 (ko) * | 2002-09-06 | 2011-07-28 | 엘리멘트 식스 리미티드 | 유색 다이아몬드 |
GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
GB0227261D0 (en) * | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
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2001
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