HK1057584A1 - Thick single crystal diamond layer, method for making it and gemstones produced from the layer - Google Patents

Thick single crystal diamond layer, method for making it and gemstones produced from the layer

Info

Publication number
HK1057584A1
HK1057584A1 HK04100293A HK04100293A HK1057584A1 HK 1057584 A1 HK1057584 A1 HK 1057584A1 HK 04100293 A HK04100293 A HK 04100293A HK 04100293 A HK04100293 A HK 04100293A HK 1057584 A1 HK1057584 A1 HK 1057584A1
Authority
HK
Hong Kong
Prior art keywords
layer
single crystal
making
crystal diamond
thick single
Prior art date
Application number
HK04100293A
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Barbel Susanne Charlotte Dorn
Andrew Michael Cooper
John Lloyd Collins
Andrew John Whitehead
Daniel James Twitchen
Ricardo Simon Sussmann
Original Assignee
Element Six Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0014690A external-priority patent/GB0014690D0/en
Priority claimed from GB0106929A external-priority patent/GB0106929D0/en
Application filed by Element Six Pty Ltd filed Critical Element Six Pty Ltd
Publication of HK1057584A1 publication Critical patent/HK1057584A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00—Gems or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Insulating Materials (AREA)
HK04100293A 2000-06-15 2004-01-15 Thick single crystal diamond layer, method for making it and gemstones produced from the layer HK1057584A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0014690A GB0014690D0 (en) 2000-06-15 2000-06-15 Diamond
GB0106929A GB0106929D0 (en) 2001-03-20 2001-03-20 Diamond
PCT/IB2001/001040 WO2001096634A1 (en) 2000-06-15 2001-06-14 Thick single crystal diamond layer method for making it and gemstones produced from the layer

Publications (1)

Publication Number Publication Date
HK1057584A1 true HK1057584A1 (en) 2004-04-08

Family

ID=26244496

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04100293A HK1057584A1 (en) 2000-06-15 2004-01-15 Thick single crystal diamond layer, method for making it and gemstones produced from the layer

Country Status (17)

Country Link
US (3) US7128974B2 (cs)
EP (2) EP1290251B8 (cs)
JP (1) JP4469552B2 (cs)
KR (1) KR100839707B1 (cs)
CN (1) CN1210445C (cs)
AT (1) ATE311486T1 (cs)
AU (2) AU6624601A (cs)
CA (1) CA2412855C (cs)
CZ (1) CZ302229B6 (cs)
DE (1) DE60115435T2 (cs)
ES (1) ES2252244T3 (cs)
GB (1) GB2379451B (cs)
HK (1) HK1057584A1 (cs)
IL (2) IL153381A0 (cs)
RU (1) RU2287028C2 (cs)
TW (1) TWI250231B (cs)
WO (1) WO2001096634A1 (cs)

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Also Published As

Publication number Publication date
AU2001266246B2 (en) 2004-10-07
US20070148079A1 (en) 2007-06-28
ES2252244T3 (es) 2006-05-16
KR100839707B1 (ko) 2008-06-19
US7128974B2 (en) 2006-10-31
EP1290251A1 (en) 2003-03-12
DE60115435T2 (de) 2006-08-31
TWI250231B (en) 2006-03-01
CZ20024228A3 (cs) 2003-12-17
CA2412855A1 (en) 2001-12-20
GB2379451A (en) 2003-03-12
JP4469552B2 (ja) 2010-05-26
EP1632590A2 (en) 2006-03-08
US20080044339A1 (en) 2008-02-21
CA2412855C (en) 2009-10-20
IL153381A0 (en) 2003-07-06
GB2379451B (en) 2004-05-05
EP1632590A3 (en) 2006-05-24
RU2287028C2 (ru) 2006-11-10
DE60115435D1 (de) 2006-01-05
ATE311486T1 (de) 2005-12-15
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US20040182308A1 (en) 2004-09-23
CN1210445C (zh) 2005-07-13
JP2004503461A (ja) 2004-02-05
AU6624601A (en) 2001-12-24
CN1441859A (zh) 2003-09-10
US7887628B2 (en) 2011-02-15
EP1632590B1 (en) 2017-01-11
KR20030036226A (ko) 2003-05-09
WO2001096634A1 (en) 2001-12-20
EP1290251B1 (en) 2005-11-30
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GB0300200D0 (en) 2003-02-05
IL153381A (en) 2006-12-10

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