GB0208076D0 - Method of fabricating group-III nitride semiconductor crystal,metho of fabricating gallium nitride-based compound semiconductor,gallium nitride-based compound - Google Patents

Method of fabricating group-III nitride semiconductor crystal,metho of fabricating gallium nitride-based compound semiconductor,gallium nitride-based compound

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Publication number
GB0208076D0
GB0208076D0 GBGB0208076.0A GB0208076A GB0208076D0 GB 0208076 D0 GB0208076 D0 GB 0208076D0 GB 0208076 A GB0208076 A GB 0208076A GB 0208076 D0 GB0208076 D0 GB 0208076D0
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GB
United Kingdom
Prior art keywords
based compound
fabricating
gallium nitride
group
metho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
GBGB0208076.0A
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GB2372635A (en
GB2372635B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
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Publication date
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Publication of GB0208076D0 publication Critical patent/GB0208076D0/en
Publication of GB2372635A publication Critical patent/GB2372635A/en
Application granted granted Critical
Publication of GB2372635B publication Critical patent/GB2372635B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
GB0208076A 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals. Expired - Fee Related GB2372635B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000248106 2000-08-18
JP2000252067 2000-08-23
US25489500P 2000-12-13 2000-12-13
US25489800P 2000-12-13 2000-12-13
JP2001016636 2001-01-25
US26985201P 2001-02-21 2001-02-21
JP2001048721 2001-02-23
US27611601P 2001-03-16 2001-03-16
PCT/JP2001/007080 WO2002017369A1 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device

Publications (3)

Publication Number Publication Date
GB0208076D0 true GB0208076D0 (en) 2002-05-22
GB2372635A GB2372635A (en) 2002-08-28
GB2372635B GB2372635B (en) 2005-01-19

Family

ID=27573712

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0208076A Expired - Fee Related GB2372635B (en) 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals.

Country Status (5)

Country Link
JP (1) JP3940673B2 (en)
AU (1) AU2001280097A1 (en)
DE (1) DE10196361B4 (en)
GB (1) GB2372635B (en)
WO (1) WO2002017369A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940673B2 (en) * 2000-08-18 2007-07-04 昭和電工株式会社 Method for producing group III nitride semiconductor crystal and method for producing gallium nitride compound semiconductor
JP3768943B2 (en) * 2001-09-28 2006-04-19 日本碍子株式会社 Group III nitride epitaxial substrate, group III nitride device epitaxial substrate, and group III nitride device
JP2004083316A (en) * 2002-08-26 2004-03-18 Namiki Precision Jewel Co Ltd Single crystal sapphire substrate, method for manufacturing single crystal sapphire substrate, and liquid crystal projector apparatus
KR101034055B1 (en) 2003-07-18 2011-05-12 엘지이노텍 주식회사 Light emitting diode and method for manufacturing light emitting diode
DE10335080A1 (en) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
DE10335081A1 (en) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
US7781795B2 (en) 2003-12-22 2010-08-24 Showa Denko K.K. Group III nitride semiconductor device and light-emitting device using the same
FI118196B (en) * 2005-07-01 2007-08-15 Optogan Oy Semiconductor structure and method for producing a semiconductor structure
KR100712753B1 (en) * 2005-03-09 2007-04-30 주식회사 실트론 Compound semiconductor device and method for manufacturing the same
KR101008856B1 (en) * 2005-04-07 2011-01-19 쇼와 덴코 가부시키가이샤 Production method of group ? nitride semiconductor element
JP2006344930A (en) * 2005-04-07 2006-12-21 Showa Denko Kk Manufacturing method of group iii nitride semiconductor device
JP5131889B2 (en) * 2005-12-06 2013-01-30 学校法人 名城大学 Method of manufacturing nitride compound semiconductor device
KR100901822B1 (en) * 2007-09-11 2009-06-09 주식회사 실트론 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
JP5167974B2 (en) * 2008-06-16 2013-03-21 豊田合成株式会社 Group III nitride compound semiconductor light emitting device and method of manufacturing the same
WO2016031039A1 (en) * 2014-08-29 2016-03-03 創光科学株式会社 Template for epitaxial growth and method of preparing same, and nitride semiconductor device
CN114050104B (en) * 2021-11-12 2022-09-30 松山湖材料实验室 Processing method of aluminum nitride single crystal substrate and preparation method of ultraviolet light-emitting device

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JPS50109621A (en) * 1974-02-04 1975-08-28
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JPS63239936A (en) * 1987-03-27 1988-10-05 Canon Inc Method for forming polycrystalline thin film semiconductor
JPH05109621A (en) * 1991-10-15 1993-04-30 Asahi Chem Ind Co Ltd Method for growing gallium nitride thin film
JPH09134878A (en) * 1995-11-10 1997-05-20 Matsushita Electron Corp Manufacture of gallium nitride compound semiconductor
JPH10215035A (en) * 1997-01-30 1998-08-11 Toshiba Corp Compound semiconductor element and manufacture thereof
JPH11135832A (en) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd Gallium nitride group compound semiconductor and manufacture therefor
JP3988245B2 (en) * 1998-03-12 2007-10-10 ソニー株式会社 Nitride III-V compound semiconductor growth method and semiconductor device manufacturing method
JP3650531B2 (en) * 1998-08-24 2005-05-18 三菱電線工業株式会社 GaN-based crystal substrate and method for producing the same
JP2001057463A (en) * 1999-06-07 2001-02-27 Sharp Corp Film structure and element of nitrogen compound semiconductor element, and manufacture of them
JP3940673B2 (en) * 2000-08-18 2007-07-04 昭和電工株式会社 Method for producing group III nitride semiconductor crystal and method for producing gallium nitride compound semiconductor

Also Published As

Publication number Publication date
JP3940673B2 (en) 2007-07-04
WO2002017369A1 (en) 2002-02-28
JP2004507106A (en) 2004-03-04
GB2372635A (en) 2002-08-28
DE10196361T5 (en) 2005-05-25
AU2001280097A1 (en) 2002-03-04
GB2372635B (en) 2005-01-19
DE10196361B4 (en) 2008-01-03

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Effective date: 20150817