GB735986A - Method of making p-n junction devices - Google Patents
Method of making p-n junction devicesInfo
- Publication number
- GB735986A GB735986A GB26233/53A GB2623353A GB735986A GB 735986 A GB735986 A GB 735986A GB 26233/53 A GB26233/53 A GB 26233/53A GB 2623353 A GB2623353 A GB 2623353A GB 735986 A GB735986 A GB 735986A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloy
- germanium
- junctions
- pellets
- per cent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000956 alloy Substances 0.000 abstract 7
- 229910045601 alloy Inorganic materials 0.000 abstract 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- 239000008188 pellet Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000000057 synthetic resin Substances 0.000 abstract 1
- 229920001169 thermoplastic Polymers 0.000 abstract 1
- 239000004416 thermosoftening plastic Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Abstract
735,986. Semi-conductor devices. RADIO CORPORATION OF AMERICA. Sept. 23, 1953 [Oct. 20, 1952], No. 26233/53. Class 37. A PN junction is produced in a metallic semi-conductor body by applying to the body an alloy of 2-15 atomic per cent of the same material as the body with a metallic impurity characteristic of the conductivity type opposite to that of the body, and alloying at least part of the alloy with the body. The alloy has a lower melting-point than the body. By using an alloy instead of the pure acceptor or donor impurity, the diffusion of impurity material into the body can be more accurately controlled. In one example, pellets are cut from a sheet of alloy consisting of 95 per cent indium and 5 per cent germanium and welded to opposite surfaces of a thin N-type germanium wafer. Heat treatment at 525 ‹ C. for 5 minutes in hydrogen or other reducing atmosphere causes the pellets to alloy and diffuse into the germanium wafer. Fig. 3 shows the germanium wafer 2 with flat and parallel PN junctions 16 and 18 separated by 0.001 inch. Etching treatment may be given to expose the surface portions of the PN junctions. The device shown in Fig. 3 constitutes a PNP transistor with emitter electrode 8 smaller than collector electrode 10, and the semiconductor body is encased in an envelope 30 of thermoplastic synthetic resin. Silicon may be used instead of germanium, and aluminium or gallium may be used in place of indium. The areas around the pellets may be masked during the heat treatment to prevent surface flow of the alloy. One or more P-N junctions may be provided.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US319753XA | 1952-10-20 | 1952-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB735986A true GB735986A (en) | 1955-08-31 |
Family
ID=21862427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB26233/53A Expired GB735986A (en) | 1952-10-20 | 1953-09-23 | Method of making p-n junction devices |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE523638A (en) |
| CH (1) | CH319753A (en) |
| FR (1) | FR1088371A (en) |
| GB (1) | GB735986A (en) |
| NL (1) | NL182156B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3167462A (en) * | 1961-06-08 | 1965-01-26 | Western Electric Co | Method of forming alloyed regions in semiconductor bodies |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL191674A (en) * | 1953-10-26 | |||
| BE553205A (en) * | 1955-03-10 | |||
| NL224041A (en) * | 1958-01-14 | |||
| DE1093483B (en) * | 1958-06-04 | 1960-11-24 | Telefunken Gmbh | Method for producing semiconductor arrangements with two pn junctions, in particular silicon transistors, by fusing two semiconductor crystals |
| US2985806A (en) * | 1958-12-24 | 1961-05-23 | Philco Corp | Semiconductor fabrication |
-
0
- BE BE523638D patent/BE523638A/xx unknown
- NL NLAANVRAGE7810304,A patent/NL182156B/en unknown
-
1953
- 1953-08-29 FR FR1088371D patent/FR1088371A/en not_active Expired
- 1953-09-18 CH CH319753D patent/CH319753A/en unknown
- 1953-09-23 GB GB26233/53A patent/GB735986A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3167462A (en) * | 1961-06-08 | 1965-01-26 | Western Electric Co | Method of forming alloyed regions in semiconductor bodies |
Also Published As
| Publication number | Publication date |
|---|---|
| BE523638A (en) | |
| FR1088371A (en) | 1955-03-07 |
| CH319753A (en) | 1957-02-28 |
| NL182156B (en) |
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