GB753133A - Improvements in or relating to electric semi-conducting devices - Google Patents

Improvements in or relating to electric semi-conducting devices

Info

Publication number
GB753133A
GB753133A GB2039553A GB2039553A GB753133A GB 753133 A GB753133 A GB 753133A GB 2039553 A GB2039553 A GB 2039553A GB 2039553 A GB2039553 A GB 2039553A GB 753133 A GB753133 A GB 753133A
Authority
GB
United Kingdom
Prior art keywords
layer
type
electrode
emitter
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2039553A
Inventor
Cyril Francis Drake
Robert Anthony Hyman
Frederick Charles Geary
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE530566D priority Critical patent/BE530566A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB125054A priority patent/GB753140A/en
Priority to GB2039553A priority patent/GB753133A/en
Priority to DE1954I0008930 priority patent/DE1024640B/en
Priority to CH331017D priority patent/CH331017A/en
Publication of GB753133A publication Critical patent/GB753133A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

753,133. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. July 22, 1953, No. 20395/53. Class 37. A transistor, rectifier or other semi-conductor device comprises a single crystal slice having a recess in at least one face, below which are a plurality of layers of successively opposite conductivity types and electrodes are secured to two or more of the layers. Fig. 1g shows a PNP transistor comprising a single crystal N-type germanium body 1 having a base electrode 13, and emitter and collector electrodes 12 and 10 respectively, in recesses and engaging P-type layers on the N-type body 1. The base electrode may alternatively consist of a copper coating 15 on the outside of the body 1, especially for coaxial mounting arrangements. The emitter recess is made smaller than the collector recess to improve the carrier collection process, and different impurity concentrations of the P-type layers are provided to improve the collector and emitter resistances. The transistor is produced by cutting a recess 2 (Fig. 1e) in a disc 1 of N-type germanium, etching, evaporating gold (an acceptor material) on to one surface, and heating to 850‹ for four hours in hydrogen to diffuse the gold into the germanium over the whole surface of the body. After annealing, recess 6 is cut, the under surface etched while the remaining surface is protected by rubber paint, to remove the P- layer from that portion, which is then plated with an acceptor material such as aluminium. The body is then heated to 850‹ C. for five minutes to diffuse the aluminium into the lower surface of the germanium to provide a P-type layer 8. The upper and lower surfaces are then ground off, and the body annealed by heating to 550‹ and cooling slowly to remove lattice defects produced in the original N-type body by the previous heating treatments. The bottom of the recesses 2 and 6, and part of the lower surface of the body are copper plated and electrodes 10, 12 and 13 soldered to the copper plating. Indium may be used as solder for emitter electrode 12. The edges of the PN junction may be etched, and the whole covered with a, protective material. Fig. 2c shows an alternative NPN construction having collector electrode 30 engaging the original N-type body, base electrode 29 engaging P-type layer 19, and emitter electrode 28 engaging an N-type layer 20 on top of P layer 19. This construction is produced by a method similar to that for Fig. 1e, g and the additional N layer 20 is produced by heating to diffuse a layer of donor material such as antimony, deposited on the P layer on the upper surface of the body. Fig. 3 shows an NPNP arrangement, with the base electrode 40 in contact with N-type body 31, emitter electrode 38 in contact with P layer 36, a " control " electrode 41 in contact with P layer 34, and collector electrode 39 in contact with N-layer 35. The invention may be applied to two electrode devices, as by having only electrodes 10 and 12 in Fig. 1g, or electrodes 39 and 38 in Fig. 3b which are separated by NPN and NPNP layers respectively. Such devices may have voltage-current characteristics as described in Specification 686,958. The recesses in the semi-conductor may consist of holes in disc-shaped bodies, or channels cut in rectangular shaped bodies. A plurality of devices may be produced simultaneously by carrying out many of the processes on a large sheet of semi-conductor which is then cut to form the separate elements. Conversion of conductivity may be effected by heating'instead of impurity diffusion. Information for calculating the extent of diffusion is given. Silicon may be used in place of germanium. Specification 700,231 also is referred to.
GB2039553A 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices Expired GB753133A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE530566D BE530566A (en) 1953-07-22
GB125054A GB753140A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices
GB2039553A GB753133A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices
DE1954I0008930 DE1024640B (en) 1953-07-22 1954-07-21 Process for the production of crystallodes
CH331017D CH331017A (en) 1953-07-22 1954-07-22 Method for producing a PN junction in a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2039553A GB753133A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices

Publications (1)

Publication Number Publication Date
GB753133A true GB753133A (en) 1956-07-18

Family

ID=10145259

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2039553A Expired GB753133A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices

Country Status (1)

Country Link
GB (1) GB753133A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1091672B (en) * 1957-05-21 1960-10-27 Philips Nv Diffusion process for manufacturing a semiconductor device
DE1093484B (en) * 1956-03-05 1960-11-24 Westinghouse Electric Corp Process for the production of semiconductor components, in particular pnp or npn power transistors
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
DE1111298B (en) * 1959-04-28 1961-07-20 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement
DE1129624B (en) * 1957-07-03 1962-05-17 Philco Corp Method of manufacturing a drift transistor having a plaque-shaped semiconductor body with a resistance gradient along its thickness
DE1170555B (en) * 1956-07-23 1964-05-21 Siemens Ag Method for manufacturing a semiconductor component with three zones of alternating conductivity types
US3264492A (en) * 1963-08-06 1966-08-02 Int Rectifier Corp Adjustable semiconductor punchthrough device having three junctions
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
US4109274A (en) * 1975-11-05 1978-08-22 Nikolai Mikhailovich Belenkov Semiconductor switching device with breakdown diode formed in the bottom of a recess

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1093484B (en) * 1956-03-05 1960-11-24 Westinghouse Electric Corp Process for the production of semiconductor components, in particular pnp or npn power transistors
DE1170555B (en) * 1956-07-23 1964-05-21 Siemens Ag Method for manufacturing a semiconductor component with three zones of alternating conductivity types
DE1091672B (en) * 1957-05-21 1960-10-27 Philips Nv Diffusion process for manufacturing a semiconductor device
DE1129624B (en) * 1957-07-03 1962-05-17 Philco Corp Method of manufacturing a drift transistor having a plaque-shaped semiconductor body with a resistance gradient along its thickness
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
DE1111298B (en) * 1959-04-28 1961-07-20 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
US3264492A (en) * 1963-08-06 1966-08-02 Int Rectifier Corp Adjustable semiconductor punchthrough device having three junctions
US4109274A (en) * 1975-11-05 1978-08-22 Nikolai Mikhailovich Belenkov Semiconductor switching device with breakdown diode formed in the bottom of a recess

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