GB909335A - Improvements in or relating to the production of semi-conductors - Google Patents
Improvements in or relating to the production of semi-conductorsInfo
- Publication number
- GB909335A GB909335A GB2819059A GB2819059A GB909335A GB 909335 A GB909335 A GB 909335A GB 2819059 A GB2819059 A GB 2819059A GB 2819059 A GB2819059 A GB 2819059A GB 909335 A GB909335 A GB 909335A
- Authority
- GB
- United Kingdom
- Prior art keywords
- foil
- doped
- type
- alloyed
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011888 foil Substances 0.000 abstract 17
- 238000005275 alloying Methods 0.000 abstract 4
- 229910001152 Bi alloy Inorganic materials 0.000 abstract 3
- 229910015367 Au—Sb Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000001953 recrystallisation Methods 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
909,335. Transistors. SIEMENS-SCHUCKERTWERK A.G. Aug. 18, 1959 [Sept. 30, 1958], No. 28190/59. Class 37. A process for producing PN junctions in a disc-shaped mono-crystalline semiconductor body comprises the steps of alloying a doped metallic foil to a flat surface of the body, removing the foil up to the recrystallization layer, and then alloying to said layer a second metallic foil doped by a substance characteristic of the opposite conductivity-type from that which doped the first foil, the second foil being thinner than the first foil. As shown, Fig. 2, in the production of a PNPN transistor, a foil 5 of Au-Bi alloy is alloyed to one surface of a disc 2 of high-ohmic p-type Si at 700- 900‹ C., preferably 800‹ C., to form an N-type region 4 after recrystallization. The foil 5 is removed by means of aqua regia, the said surface of disc 2 is lapped plane, and a foil 10, Fig. 6, of Au-B-Bi alloy (which is predominantly characteristic of P-type conductivity) or of Al, of smaller area and thinner than foil 5, is alloyed centrally to the region 4 to produceP-type region 9. At the same time, a Au foil 11 N-doped with, e.g. 0.5% Sb, is alloyed to another part of the N-type region 4, and a similarly doped foil 13 is alloyed to the opposite surface of the disc 2 to produce a second N-type region 12. Preferably, foil 11 is annular and is placed over the exposed junction defining N-type region 4 so that, upon alloying, the latter region is extended as shown. To produce a PNIP transistor, foil 13 may comprise Au-B-Bi alloy. When body 2 is of N-type conductivity, the first foil may be of A1, the second of Au-Sb alloy, and the foil on the opposite surface of the body may be of Al or Au-B-Bi to produce a PNPN element, or of Au-Sb to produce an NPIN element; the use of HCl or H 2 SO 4 to remove the first foil is mentioned in this case. All the alloying processes may be carried out with the assembly embedded under pressure in an inert powder, as described in Specifications 827,762 and 840,241. Specification 908,103 also is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES60101A DE1113520B (en) | 1958-09-30 | 1958-09-30 | Process for the production of semiconductor arrangements, in particular for high current purposes, with several relatively large-area layers of different conductivity types |
Publications (1)
Publication Number | Publication Date |
---|---|
GB909335A true GB909335A (en) | 1962-10-31 |
Family
ID=7493854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2819059A Expired GB909335A (en) | 1958-09-30 | 1959-08-18 | Improvements in or relating to the production of semi-conductors |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE583121A (en) |
CH (1) | CH374773A (en) |
DE (1) | DE1113520B (en) |
FR (1) | FR1233333A (en) |
GB (1) | GB909335A (en) |
NL (1) | NL242039A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE668063A (en) * | 1963-06-25 | |||
DE1278016B (en) * | 1963-11-16 | 1968-09-19 | Siemens Ag | Semiconductor component with a monocrystalline semiconductor body |
GB1072703A (en) * | 1964-05-12 | 1967-06-21 | Mullard Ltd | Improvements in and relating to methods of manufacturing semiconductor bodies |
DE1216989B (en) * | 1964-06-24 | 1966-05-18 | Licentia Gmbh | Method for producing a semiconductor component with a silicon body |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
-
0
- NL NL242039D patent/NL242039A/xx unknown
- BE BE583121D patent/BE583121A/xx unknown
-
1958
- 1958-09-30 DE DES60101A patent/DE1113520B/en active Pending
-
1959
- 1959-08-17 FR FR802977A patent/FR1233333A/en not_active Expired
- 1959-08-18 GB GB2819059A patent/GB909335A/en not_active Expired
- 1959-09-22 CH CH7851559A patent/CH374773A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CH374773A (en) | 1964-01-31 |
DE1113520B (en) | 1961-09-07 |
FR1233333A (en) | 1960-10-12 |
BE583121A (en) | |
NL242039A (en) |
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