GB909335A - Improvements in or relating to the production of semi-conductors - Google Patents

Improvements in or relating to the production of semi-conductors

Info

Publication number
GB909335A
GB909335A GB2819059A GB2819059A GB909335A GB 909335 A GB909335 A GB 909335A GB 2819059 A GB2819059 A GB 2819059A GB 2819059 A GB2819059 A GB 2819059A GB 909335 A GB909335 A GB 909335A
Authority
GB
United Kingdom
Prior art keywords
foil
doped
type
alloyed
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2819059A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB909335A publication Critical patent/GB909335A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

909,335. Transistors. SIEMENS-SCHUCKERTWERK A.G. Aug. 18, 1959 [Sept. 30, 1958], No. 28190/59. Class 37. A process for producing PN junctions in a disc-shaped mono-crystalline semiconductor body comprises the steps of alloying a doped metallic foil to a flat surface of the body, removing the foil up to the recrystallization layer, and then alloying to said layer a second metallic foil doped by a substance characteristic of the opposite conductivity-type from that which doped the first foil, the second foil being thinner than the first foil. As shown, Fig. 2, in the production of a PNPN transistor, a foil 5 of Au-Bi alloy is alloyed to one surface of a disc 2 of high-ohmic p-type Si at 700- 900‹ C., preferably 800‹ C., to form an N-type region 4 after recrystallization. The foil 5 is removed by means of aqua regia, the said surface of disc 2 is lapped plane, and a foil 10, Fig. 6, of Au-B-Bi alloy (which is predominantly characteristic of P-type conductivity) or of Al, of smaller area and thinner than foil 5, is alloyed centrally to the region 4 to produceP-type region 9. At the same time, a Au foil 11 N-doped with, e.g. 0.5% Sb, is alloyed to another part of the N-type region 4, and a similarly doped foil 13 is alloyed to the opposite surface of the disc 2 to produce a second N-type region 12. Preferably, foil 11 is annular and is placed over the exposed junction defining N-type region 4 so that, upon alloying, the latter region is extended as shown. To produce a PNIP transistor, foil 13 may comprise Au-B-Bi alloy. When body 2 is of N-type conductivity, the first foil may be of A1, the second of Au-Sb alloy, and the foil on the opposite surface of the body may be of Al or Au-B-Bi to produce a PNPN element, or of Au-Sb to produce an NPIN element; the use of HCl or H 2 SO 4 to remove the first foil is mentioned in this case. All the alloying processes may be carried out with the assembly embedded under pressure in an inert powder, as described in Specifications 827,762 and 840,241. Specification 908,103 also is referred to.
GB2819059A 1958-09-30 1959-08-18 Improvements in or relating to the production of semi-conductors Expired GB909335A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60101A DE1113520B (en) 1958-09-30 1958-09-30 Process for the production of semiconductor arrangements, in particular for high current purposes, with several relatively large-area layers of different conductivity types

Publications (1)

Publication Number Publication Date
GB909335A true GB909335A (en) 1962-10-31

Family

ID=7493854

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2819059A Expired GB909335A (en) 1958-09-30 1959-08-18 Improvements in or relating to the production of semi-conductors

Country Status (6)

Country Link
BE (1) BE583121A (en)
CH (1) CH374773A (en)
DE (1) DE1113520B (en)
FR (1) FR1233333A (en)
GB (1) GB909335A (en)
NL (1) NL242039A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE668063A (en) * 1963-06-25
DE1278016B (en) * 1963-11-16 1968-09-19 Siemens Ag Semiconductor component with a monocrystalline semiconductor body
GB1072703A (en) * 1964-05-12 1967-06-21 Mullard Ltd Improvements in and relating to methods of manufacturing semiconductor bodies
DE1216989B (en) * 1964-06-24 1966-05-18 Licentia Gmbh Method for producing a semiconductor component with a silicon body

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions

Also Published As

Publication number Publication date
CH374773A (en) 1964-01-31
DE1113520B (en) 1961-09-07
FR1233333A (en) 1960-10-12
BE583121A (en)
NL242039A (en)

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