GB864121A - Improvements in or relating to semi-conductor devices - Google Patents
Improvements in or relating to semi-conductor devicesInfo
- Publication number
- GB864121A GB864121A GB3678260A GB3678260A GB864121A GB 864121 A GB864121 A GB 864121A GB 3678260 A GB3678260 A GB 3678260A GB 3678260 A GB3678260 A GB 3678260A GB 864121 A GB864121 A GB 864121A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- foil
- gold
- disc
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000011888 foil Substances 0.000 abstract 3
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- 239000002826 coolant Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
864,121. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. April 25, 1957 [April 26, 1956], No. 36782/60. Divided out of 864,120. Class 37. A semi-conductor device comprises a monocrystalline semi-conductor wafer with a first electrode and an associated PN junction extending over the whole of one face and the edges and a smaller electrode on the other face. A rectifier of this type, Fig. 1, comprises base electrode 3, of aluminium foil, P-type silicon disc 2, a gold antimony junction forming electrode foil 4 and a supporting member 5. The parts are assembled and heated to alloy the electrodes to the disc and to member 5. Alternatively member 5, the coefficient of expansion of which is preferably matched to that of the disc, is subsequently soldered to electrode 4. The member may be provided with coolant channels or cooling fins or attached to a massive copper block. If the disc is thin enough and the gold foil extends beyond its edges the gold creeps up the edges during alloying automatically. If not, a thin annular gold-antimony foil is placed on the periphery of the upper surface and joins with the main foil during alloying. A transistor, Fig. 2, comprising concentric circular and annular base electrodes 3a, 3b, annular emitter 6, and collector electrode 4, is formed by a similar process. The subject-matter of this Application is divided out of Specification 864,120.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES48482A DE1046782B (en) | 1956-04-26 | 1956-04-26 | Semiconductor arrangement with a disk-shaped, essentially monocrystalline semiconductor base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB864121A true GB864121A (en) | 1961-03-29 |
Family
ID=7486876
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1329357A Expired GB864120A (en) | 1956-04-26 | 1957-04-25 | Improvements in or relating to semi-conductor devices |
| GB3678260A Expired GB864121A (en) | 1956-04-26 | 1957-04-25 | Improvements in or relating to semi-conductor devices |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1329357A Expired GB864120A (en) | 1956-04-26 | 1957-04-25 | Improvements in or relating to semi-conductor devices |
Country Status (6)
| Country | Link |
|---|---|
| CH (1) | CH352410A (en) |
| DE (1) | DE1046782B (en) |
| FR (1) | FR1173654A (en) |
| GB (2) | GB864120A (en) |
| NL (2) | NL6401835A (en) |
| SE (1) | SE308930B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2221344B (en) * | 1988-07-01 | 1992-12-23 | Mitsubishi Electric Corp | Semiconductor device and production method therefor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105522B (en) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor with a disk-shaped semiconductor body |
| US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
| DE2412924C3 (en) * | 1974-03-18 | 1981-09-17 | Kausov, Sergej Fedorovič, Moskva | Method of manufacturing a semiconductor diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL180221B (en) * | 1952-07-29 | Charbonnages Ste Chimique | PROCESS FOR PREPARING A POLYAMINOAMIDE HARDENING AGENT FOR EPOXY RESINS; PROCESS FOR PREPARING A WATER DIVIDED HARDENING AGENT; PROCESS FOR PREPARING AN EPOXY RESIN COMPOSITION CONTAINING SUCH HARDENING AGENT AND AN OBJECT FACING A COATING LAYER OBTAINED FROM SUCH EPOXY RESIN COMPOSITION. |
-
0
- NL NL216645D patent/NL216645A/xx unknown
-
1956
- 1956-04-26 DE DES48482A patent/DE1046782B/en active Pending
-
1957
- 1957-04-24 CH CH352410D patent/CH352410A/en unknown
- 1957-04-25 GB GB1329357A patent/GB864120A/en not_active Expired
- 1957-04-25 FR FR1173654D patent/FR1173654A/en not_active Expired
- 1957-04-25 GB GB3678260A patent/GB864121A/en not_active Expired
-
1964
- 1964-02-26 NL NL6401835A patent/NL6401835A/xx unknown
-
1965
- 1965-07-12 SE SE918865A patent/SE308930B/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2221344B (en) * | 1988-07-01 | 1992-12-23 | Mitsubishi Electric Corp | Semiconductor device and production method therefor |
| US5324981A (en) * | 1988-07-01 | 1994-06-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor device with contact in groove |
| US5434094A (en) * | 1988-07-01 | 1995-07-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| CH352410A (en) | 1961-02-28 |
| NL6401835A (en) | 1966-09-26 |
| GB864120A (en) | 1961-03-29 |
| NL216645A (en) | |
| DE1046782B (en) | 1958-12-18 |
| SE308930B (en) | 1969-03-03 |
| FR1173654A (en) | 1959-02-27 |
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