GB2291738B - Method for fabricating capacitor of semiconductor device - Google Patents
Method for fabricating capacitor of semiconductor deviceInfo
- Publication number
- GB2291738B GB2291738B GB9512769A GB9512769A GB2291738B GB 2291738 B GB2291738 B GB 2291738B GB 9512769 A GB9512769 A GB 9512769A GB 9512769 A GB9512769 A GB 9512769A GB 2291738 B GB2291738 B GB 2291738B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- fabricating capacitor
- fabricating
- capacitor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940014250A KR0154152B1 (ko) | 1994-06-22 | 1994-06-22 | 반도체소자의 스택 캐패시터 제조방법 |
KR1019940015010A KR0147772B1 (ko) | 1994-06-28 | 1994-06-28 | 반도체장치의 캐패시터 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9512769D0 GB9512769D0 (en) | 1995-08-23 |
GB2291738A GB2291738A (en) | 1996-01-31 |
GB2291738B true GB2291738B (en) | 1998-04-29 |
Family
ID=26630455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9512769A Expired - Fee Related GB2291738B (en) | 1994-06-22 | 1995-06-22 | Method for fabricating capacitor of semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US5510289A (zh) |
JP (1) | JP2622243B2 (zh) |
CN (1) | CN1044948C (zh) |
DE (1) | DE19522370C2 (zh) |
GB (1) | GB2291738B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0810664A3 (en) * | 1996-05-31 | 1999-08-18 | Texas Instruments Incorporated | DRAM cell and method of its manufacture |
KR100219483B1 (ko) * | 1996-06-03 | 1999-09-01 | 윤종용 | 반도체 장치의 커패시터 제조방법 |
US5677221A (en) * | 1996-06-19 | 1997-10-14 | Vanguard International Semiconductor Corp. | Method of manufacture DRAM capacitor with reduced layout area |
KR100235938B1 (ko) * | 1996-06-24 | 1999-12-15 | 김영환 | 반구형 실리콘 제조방법 |
GB2321779A (en) * | 1996-08-16 | 1998-08-05 | United Microelectronics Corp | Semiconductor memory device having a capacitor |
KR100236069B1 (ko) * | 1996-12-26 | 1999-12-15 | 김영환 | 캐패시터 및 그 제조방법 |
KR100253086B1 (ko) * | 1997-07-25 | 2000-04-15 | 윤종용 | 반도체장치제조를위한세정용조성물및이를이용한반도체장치의제조방법 |
KR100252055B1 (ko) * | 1997-12-11 | 2000-04-15 | 윤종용 | 커패시터를 포함하는 반도체장치 및 그 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5102820A (en) * | 1990-06-29 | 1992-04-07 | Oki Electric Industry Co., Ltd. | Manufacturing method for semiconductor memories |
EP0507683A1 (en) * | 1991-04-01 | 1992-10-07 | Fujitsu Limited | Stacked capacitor and method for making same |
US5155657A (en) * | 1991-10-31 | 1992-10-13 | International Business Machines Corporation | High area capacitor formation using material dependent etching |
GB2276980A (en) * | 1993-03-22 | 1994-10-12 | Samsung Electronics Co Ltd | Semiconductor device stacked capacitor and method of manufacture |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5164337A (en) * | 1989-11-01 | 1992-11-17 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device having a capacitor in a stacked memory cell |
KR920017248A (ko) * | 1991-02-18 | 1992-09-26 | 문정환 | 반도체 메모리 소자의 커패시터 제조방법 |
US5137842A (en) * | 1991-05-10 | 1992-08-11 | Micron Technology, Inc. | Stacked H-cell capacitor and process to fabricate same |
US5330928A (en) * | 1992-09-28 | 1994-07-19 | Industrial Technology Research Institute | Method for fabricating stacked capacitors with increased capacitance in a DRAM cell |
US5449635A (en) * | 1993-12-28 | 1995-09-12 | Goldstar Electron Co., Ltd. | Method of fabricating a semiconductor memory |
KR0135803B1 (ko) * | 1994-05-13 | 1998-04-24 | 김광호 | 상.하로 분리된 커패시터를 갖는 반도체 메모리장치 및 그 제조방법 |
-
1995
- 1995-05-26 CN CN95106001A patent/CN1044948C/zh not_active Expired - Fee Related
- 1995-06-01 US US08/457,222 patent/US5510289A/en not_active Expired - Fee Related
- 1995-06-19 JP JP7151503A patent/JP2622243B2/ja not_active Expired - Fee Related
- 1995-06-20 DE DE19522370A patent/DE19522370C2/de not_active Expired - Fee Related
- 1995-06-22 GB GB9512769A patent/GB2291738B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5102820A (en) * | 1990-06-29 | 1992-04-07 | Oki Electric Industry Co., Ltd. | Manufacturing method for semiconductor memories |
EP0507683A1 (en) * | 1991-04-01 | 1992-10-07 | Fujitsu Limited | Stacked capacitor and method for making same |
US5155657A (en) * | 1991-10-31 | 1992-10-13 | International Business Machines Corporation | High area capacitor formation using material dependent etching |
GB2276980A (en) * | 1993-03-22 | 1994-10-12 | Samsung Electronics Co Ltd | Semiconductor device stacked capacitor and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
CN1118935A (zh) | 1996-03-20 |
DE19522370A1 (de) | 1996-01-04 |
US5510289A (en) | 1996-04-23 |
JP2622243B2 (ja) | 1997-06-18 |
CN1044948C (zh) | 1999-09-01 |
DE19522370C2 (de) | 1996-09-26 |
GB9512769D0 (en) | 1995-08-23 |
GB2291738A (en) | 1996-01-31 |
JPH0832034A (ja) | 1996-02-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20070622 |