GB2289372B - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
GB2289372B
GB2289372B GB9509196A GB9509196A GB2289372B GB 2289372 B GB2289372 B GB 2289372B GB 9509196 A GB9509196 A GB 9509196A GB 9509196 A GB9509196 A GB 9509196A GB 2289372 B GB2289372 B GB 2289372B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9509196A
Other versions
GB2289372A (en
GB9509196D0 (en
Inventor
Koji Manabe
Kenji Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Publication of GB9509196D0 publication Critical patent/GB9509196D0/en
Publication of GB2289372A publication Critical patent/GB2289372A/en
Application granted granted Critical
Publication of GB2289372B publication Critical patent/GB2289372B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9509196A 1994-05-10 1995-05-05 Method of manufacturing semiconductor device Expired - Fee Related GB2289372B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9632194A JPH07307306A (en) 1994-05-10 1994-05-10 Manufacture of semiconductor device

Publications (3)

Publication Number Publication Date
GB9509196D0 GB9509196D0 (en) 1995-06-28
GB2289372A GB2289372A (en) 1995-11-15
GB2289372B true GB2289372B (en) 1998-08-19

Family

ID=14161756

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9509196A Expired - Fee Related GB2289372B (en) 1994-05-10 1995-05-05 Method of manufacturing semiconductor device

Country Status (3)

Country Link
JP (1) JPH07307306A (en)
DE (1) DE19516998A1 (en)
GB (1) GB2289372B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090707A (en) * 1999-09-02 2000-07-18 Micron Technology, Inc. Method of forming a conductive silicide layer on a silicon comprising substrate and method of forming a conductive silicide contact
JP5600985B2 (en) * 2010-03-24 2014-10-08 三菱電機株式会社 Method for manufacturing power semiconductor device
JP5721339B2 (en) * 2010-04-01 2015-05-20 三菱電機株式会社 Semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS513574A (en) * 1974-06-26 1976-01-13 Nippon Electric Co IONCHUNYUSARETAKIBANNO SHORIHOHO
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
EP0029334A1 (en) * 1979-11-15 1981-05-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Series-connected combination of two-terminal semiconductor devices and their fabrication
US4298403A (en) * 1980-02-28 1981-11-03 Davey John E Ion-implanted evaporated germanium layers as n+ contacts to GaAs
EP0042066A2 (en) * 1980-06-12 1981-12-23 International Business Machines Corporation Intermetallic semiconductor devices
EP0164720A2 (en) * 1984-06-14 1985-12-18 International Business Machines Corporation An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact
WO1988005601A1 (en) * 1987-01-16 1988-07-28 The Marconi Company Limited Contact to cadmium mercury telluride

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755026A (en) * 1971-04-01 1973-08-28 Sprague Electric Co Method of making a semiconductor device having tunnel oxide contacts
JPS59213145A (en) * 1983-05-18 1984-12-03 Toshiba Corp Semiconductor device and manufacture thereof
US5229631A (en) * 1990-08-15 1993-07-20 Intel Corporation Erase performance improvement via dual floating gate processing
US5102814A (en) * 1990-11-02 1992-04-07 Intel Corporation Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions
US5150176A (en) * 1992-02-13 1992-09-22 Motorola, Inc. PN junction surge suppressor structure with moat

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS513574A (en) * 1974-06-26 1976-01-13 Nippon Electric Co IONCHUNYUSARETAKIBANNO SHORIHOHO
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
EP0029334A1 (en) * 1979-11-15 1981-05-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Series-connected combination of two-terminal semiconductor devices and their fabrication
US4298403A (en) * 1980-02-28 1981-11-03 Davey John E Ion-implanted evaporated germanium layers as n+ contacts to GaAs
EP0042066A2 (en) * 1980-06-12 1981-12-23 International Business Machines Corporation Intermetallic semiconductor devices
EP0164720A2 (en) * 1984-06-14 1985-12-18 International Business Machines Corporation An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact
WO1988005601A1 (en) * 1987-01-16 1988-07-28 The Marconi Company Limited Contact to cadmium mercury telluride

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WPI Abstract Accession No 76-15479X/09 & JP51003574 (NIPPON ELECTRIC) 13/1/76 (see abstract) *

Also Published As

Publication number Publication date
GB2289372A (en) 1995-11-15
DE19516998A1 (en) 1995-11-23
JPH07307306A (en) 1995-11-21
GB9509196D0 (en) 1995-06-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000507